Download or read book Amplification and Oscillation in Liquid Phase Grown Epitaxial Gallium Arsenide written by John Aiden Higgins and published by . This book was released on 1970 with total page 418 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Liquid Phase Epitaxial Growth of Gallium Arsenide written by Margaret Folkard and published by . This book was released on 1979 with total page 25 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Measurement of Temperature Instabilities and Their Effect on the Liquid Phase Epitaxial Growth of Gallium Arsenide written by Margaret Folkard and published by . This book was released on 1979 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Transport Mechanisms in Liquid Phase Epitaxial Growth of Gallium Arsenide written by Stephen Ingalls Long and published by . This book was released on 1974 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt: The influence of solute transport mechanisms on growth rates, thickness uniformity, and surface morphology of liquid phase epitaxially grown layers was studied theoretically and experimentally. Steady state diffusion theory was developed to relate temperature gradients, growth temperatures and substrate location to observed growth rates. A vertical steady-state epitaxy system was constructed which uses cylindrical symmetry to achieve good thermal uniformity. A numerical technique was used to calculate temperature distributions in cylindrical graphite boats. The heat conduction equation is solved both with fixed temperature and radiation heat transfer boundary conditions. Good agreement with measured temperature data has been obtained. (Modified author abstract).

Download or read book The Controlled Growth of Liquid Phase Epitaxial Gallium Arsenide Layers written by Michael Emmanuel Lee and published by . This book was released on 1978 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth and Characterisation of Liquid Phase Epitaxial Gallium Arsenide written by D. Alexiev and published by . This book was released on 1990 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Liquid Phase Epitaxial Growth Of Gallium Arsenide And Aluminium Gallium Arsenide For Double Heterostructure Laser Diodes written by Standen Nigel Douglas and published by . This book was released on 1988 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Arsenide and Related Compounds written by and published by . This book was released on 1972 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A Deep Level Transient Spectroscopy Study of Melt and Liquid Phase Epitaxial Grown Gallium Arsenide written by Andrew William Ralph Leitch and published by . This book was released on 1984 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Influence of Defects and Growth Paramenters on the Electrical and Optical Properties of Liquid Phase Epitaxial Gallium Arsenide Layers written by Andrew William Ralph Leitch and published by . This book was released on 1980 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Recent Advances in the Growth of Epitaxial Gallium Arsenide written by Kenneth L. Klohn and published by . This book was released on 1971 with total page 43 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report is a review of recent advances in the epitaxial growth of gallium arsenide. The lower temperatures (550-800C) associated with the epitaxial process, as compared to bulk growth (1240C), has aided in the achievement of high purity gallium arsenide layers with low defect density and good homogeneity. A number of systems have been investigated and developed for epitaxial growth of gallium arsenide and each of these is discussed in regard to its associated technology and procedure, chemical reaction, indicated results, advantages and disadvantages. These systems include: (1) vapor growth with the following vapor transport agents: HCl, GaCl3, water vapor, iodine, arsine; (2) liquid phase epitaxy; (3) traveling solvent zone; (4) vapor-liquid-solid; (5) evaporation. All systems require a careful surface preparation of the substrate and the use of high purity starting materials to obtain high purity Gas with good homogeneity and crystal perfection. The highest reported mobility for GaAs was obtained using the liquid phase solution regrowth technique. (Author).

Download or read book Growth and Characterization of Gallium Arsenide Grown by Conventional and Current controlled Liquid Phase Epitaxy written by Ronald Paul Gale and published by . This book was released on 1978 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Liquid Phase Epitaxial Growth of Aluminum Gallium Arsenide Avalanche Photodiodes written by Stephen Charles Smith and published by . This book was released on 1986 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Influence of Defects and Growth Parameters on the Electrical and Optical Properties of Liquid Phase Epitaxial Gallium Arsenide Layers written by Andrew William Ralph Leitch and published by . This book was released on 1980 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Liquid Phase Epitaxy of Gallium Arsenide a Review written by and published by . This book was released on 1992 with total page 20 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth and Characterization of Gallium Arsenide Layers Using Liquid Phase Epitaxy written by William R. Nance and published by . This book was released on 1978 with total page 132 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Molecular Beam Epitaxy written by John Orton and published by OUP Oxford. This book was released on 2015-06-25 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early âhome-madeâ variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called âlow-dimensional structuresâ (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.