Download or read book Accuracy of Phase shifting Point Diffraction Interferometry to Test EUV Lithographic Optics written by Sang Hun Lee and published by . This book was released on 1998 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Phase shifting Point diffraction Interferometry at EUV Wavelengths written by and published by . This book was released on 1997 with total page 2 pages. Available in PDF, EPUB and Kindle. Book excerpt: A novel phase-shifting point-diffraction interferometer (PS/PDI) operating at the Advanced Light Source (ALS) is being used to perform wavefront-measuring metrology at 13.4-nm wavelength to characterize aberrations in a multilayer-coated 10x Schwarzschild objective designed for extreme ultraviolet (EUV) projection lithography experiments. To achieve 0.1-micron critical dimension pattern transfer with EUV projection lithography at 13.4-nm wavelength, nearly diffraction-limited all-reflective multilayer-coated optical systems with 0.1 numerical aperture are required. The EUV wavefront, determined by the mirror surfaces and the reflective multilayer coatings, is measurable only at the operational wavelength of the system. The authors goal is to measure the EUV wavefront to an accuracy of 0.01 waves rms (0.13 nm). The PS/PDI is a type of point-diffraction interferometer, modified for significantly improved throughput and phase-shifting capability. The interferometer design utilizes a grating beamsplitter and pinhole spatial filters in the object and image planes of the optical system under test. The 10x-reduction Schwarzschild objective, with image-side numerical aperture of 0.08, is illuminated by a sub-micron pinhole in the object plane. A coarse, 20-micron pitch grating placed between the illumination pinhole and the Schwarzschild system serves a dual role as a small-angle beam-splitter and a phase-shifting element. The first-order diffracted beam from the grating is spatially filtered in the image plane of the Schwarzschild with a sub-100-nm pinhole and becomes the `D reference` wave in the interferometer. The zero-order beam is the `test` wave, and it passes unobstructed through a 4.5-[mu]m window in the image plane. The test and reference beams are separated by several microns in the image plane to minimize beam overlap. The interference fringes are recorded with a CCD detector placed about 12 cm from the Schwarzschild image plane.
Download or read book Phase Shifting Diffraction Interferometry for Measuring Extreme Ultraviolet Optics written by and published by . This book was released on 1996 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: Extreme ultraviolet projection lithography operating at a wavelength of 13nm requires surface figure accuracy on each mirror to be better than 0.25nm rms. A new type of interferometry, based on the fundamental process of diffraction, is described that can intrinsically achieve the required accuracy. Applying this principle, two independent spherical wavefronts are generated - one serves as the measurement wavefront and is incident on the optic or optical system under test and the other serves as the reference wavefront. Since they are generated independently their relative amplitude and phase can be controlled, providing contrast adjustment and phase shifting capability. Using diffraction from a single mode optical fiber, different interferometers can be configured to measure individual mirrors or entire imaging systems. Measurement of an EUV projection system is described. 5 refs., 4 figs.
Download or read book Adding Static Printing Capabilities to the EUV Phase shifting Point Diffraction Interferometer written by and published by . This book was released on 2001 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: While interferometry is routinely used for the characterization and alignment of lithographic optics, the ultimate performance metric for these optics is printing in photoresist. Direct comparison of imaging and wavefront performance is also useful for verifying and improving the predictive power of wavefront metrology under actual printing conditions. To address these issues, static, small-field printing capabilities are being added to the extreme ultraviolet (EUV) phase-shifting point diffraction interferometer (PS/PDI) implemented at the Advanced Light Source at Lawrence Berkeley National Laboratory. This Sub-field Exposure Station (SES) will enable the earliest possible imaging characterization of the upcoming Engineering Test Stand (ETS) Set-2 projection optics. Relevant printing studies with the ETS projection optics require illumination partial coherence with [sigma] of approximately 0.7. This [sigma] value is very different from the coherent illumination requirements of the EUV PS/PDI and the coherence properties naturally provided by synchrotron undulator beamline illumination. Adding printing capabilities to the PS/PDI experimental system thus necessitates the development of an alternative illumination system capable of destroying the inherent coherence of the beamline. The SES is being implemented with two independent illuminators: the first is based on a novel EUV diffuser currently under development and the second is based on a scanning mirror design. Here we describe the design and implementation of the new SES, including a discussion of the illuminators and the fabrication of the EUV diffuser.
Download or read book Extreme Ultraviolet Interferometry written by and published by . This book was released on 1997 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt: EUV lithography is a promising and viable candidate for circuit fabrication with 0.1-micron critical dimension and smaller. In order to achieve diffraction-limited performance, all-reflective multilayer-coated lithographic imaging systems operating near 13-nm wavelength and 0.1 NA have system wavefront tolerances of 0.27 nm, or 0.02 waves RMS. Owing to the highly-sensitive resonant reflective properties of multilayer mirrors and extraordinarily tight tolerances set forth for their fabrication, EUV optical systems require at-wavelength EUV interferometry for final alignment and qualification. This dissertation discusses the development and successful implementation of high-accuracy EUV interferometric techniques. Proof-of-principle experiments with a prototype EUV point-diffraction interferometer for the measurement of Fresnel zoneplate lenses first demonstrated sub-wavelength EUV interferometric capability. These experiments spurred the development of the superior phase-shifting point-diffraction interferometer (PS/PDI), which has been implemented for the testing of an all-reflective lithographic-quality EUV optical system. Both systems rely on pinhole diffraction to produce spherical reference wavefronts in a common-path geometry. Extensive experiments demonstrate EUV wavefront-measuring precision beyond 0.02 waves RMS. EUV imaging experiments provide verification of the high-accuracy of the point-diffraction principle, and demonstrate the utility of the measurements in successfully predicting imaging performance. Complementary to the experimental research, several areas of theoretical investigation related to the novel PS/PDI system are presented. First-principles electromagnetic field simulations of pinhole diffraction are conducted to ascertain the upper limits of measurement accuracy and to guide selection of the pinhole diameter. Investigations of the relative merits of different PS/PDI configurations accompany a general study of the most significant sources of systematic measurement errors. To overcome a variety of experimental difficulties, several new methods in interferogram analysis and phase-retrieval were developed: the Fourier-Transform Method of Phase-Shift Determination, which uses Fourier-domain analysis to improve the accuracy of phase-shifting interferometry; the Fourier-Transform Guided Unwrap Method, which was developed to overcome difficulties associated with a high density of mid-spatial-frequency blemishes and which uses a low-spatial-frequency approximation to the measured wavefront to guide the phase unwrapping in the presence of noise; and, finally, an expedient method of Gram-Schmidt orthogonalization which facilitates polynomial basis transformations in wave-front surface fitting procedures.
Download or read book EUV Lithography written by Vivek Bakshi and published by SPIE Press. This book was released on 2009 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt: Editorial Review Dr. Bakshi has compiled a thorough, clear reference text covering the important fields of EUV lithography for high-volume manufacturing. This book has resulted from his many years of experience in EUVL development and from teaching this subject to future specialists. The book proceeds from an historical perspective of EUV lithography, through source technology, optics, projection system design, mask, resist, and patterning performance, to cost of ownership. Each section contains worked examples, a comprehensive review of challenges, and relevant citations for those who wish to further investigate the subject matter. Dr. Bakshi succeeds in presenting sometimes unfamiliar material in a very clear manner. This book is also valuable as a teaching tool. It has become an instant classic and far surpasses others in the EUVL field. --Dr. Akira Endo, Chief Development Manager, Gigaphoton Inc. Description Extreme ultraviolet lithography (EUVL) is the principal lithography technology aiming to manufacture computer chips beyond the current 193-nm-based optical lithography, and recent progress has been made on several fronts: EUV light sources, optics, optics metrology, contamination control, masks and mask handling, and resists. This comprehensive volume is comprised of contributions from the world's leading EUVL researchers and provides all of the critical information needed by practitioners and those wanting an introduction to the field. Interest in EUVL technology continues to increase, and this volume provides the foundation required for understanding and applying this exciting technology. About the editor of EUV Lithography Dr. Vivek Bakshi previously served as a senior member of the technical staff at SEMATECH; he is now president of EUV Litho, Inc., in Austin, Texas.
Download or read book EUV Sources for Lithography written by Vivek Bakshi and published by SPIE Press. This book was released on 2006 with total page 1104 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive volume, edited by a senior technical staff member at SEMATECH, is the authoritative reference book on EUV source technology. The volume contains 38 chapters contributed by leading researchers and suppliers in the EUV source field. Topics range from a state-of-the-art overview and in-depth explanation of EUV source requirements, to fundamental atomic data and theoretical models of EUV sources based on discharge-produced plasmas (DPP) and laser-produced plasmas, to a description of prominent DPP and LPP designs and other technologies for producing EUV radiation. Additional topics include EUV source metrology and components (collectors, electrodes), debris mitigation, and mechanisms of component erosion in EUV sources. The volume is intended to meet the needs of both practitioners of the technology and readers seeking an introduction to the subject.
Download or read book Interferometric At wavelength Flare Characterization of EUV Optical Systems written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The extreme ultraviolet (EUV) phase-shifting point diffraction interferometer (PS/PDI) provides the high-accuracy wavefront characterization critical to the development of EUV lithography systems. Enhancing the implementation of the PS/PDI can significantly extend its spatial-frequency measurement bandwidth. The enhanced PS/PDI is capable of simultaneously characterizing both wavefront and flare. The enhanced technique employs a hybrid spatial/temporal-domain point diffraction interferometer (referred to as the dual-domain PS/PDI) that is capable of suppressing the scattered-reference-light noise that hinders the conventional PS/PDI. Using the dual-domain technique in combination with a flare-measurement-optimized mask and an iterative calculation process for removing flare contribution caused by higher order grating diffraction terms, the enhanced PS/PDI can be used to simultaneously measure both figure and flare in optical systems.
Download or read book Emerging Lithographic Technologies written by and published by . This book was released on 2003 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Applied Optics written by and published by . This book was released on 1999 with total page 984 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Extreme Ultraviolet EUV Holographic Metrology for Lithography Applications written by Sang-hun Yi and published by . This book was released on 2000 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advances in Metrology for X ray and EUV Optics written by and published by . This book was released on 2005 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Point Diffraction Interferometry at Soft X ray Wavelengths written by and published by . This book was released on 1993 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: To achieve the image performance necessary for soft x-ray projection lithography, interferometric testing at the design wavelength is required to accurately characterize the wavefront of the imaging system. The wavefront depends not only on the surface figure of the individual optics and on their relative alignment, but also on aperture dependent phase shifts induced by the resonant multilayer coatings on the optical surfaces. This paper describes the design and lithographic fabrication of an array of point diffraction interferometers on a silicon nitride membrane that has been over-coated with a spatially graded partially transmitting film to provide fringe contrast control. Experimental results using a visible light analogue (larger pinholes and different transmission gradient) will be shown.
Download or read book Characterization of Extreme Ultraviolet Imaging Systems written by Edita Tejnil and published by . This book was released on 1997 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Microlithography written by Bruce W. Smith and published by CRC Press. This book was released on 2018-10-03 with total page 864 pages. Available in PDF, EPUB and Kindle. Book excerpt: This new edition of the bestselling Microlithography: Science and Technology provides a balanced treatment of theoretical and operational considerations, from elementary concepts to advanced aspects of modern submicron microlithography. Each chapter reflects the current research and practices from the world's leading academic and industrial laboratories detailed by a stellar panel of international experts. New in the Second Edition In addition to updated information on existing material, this new edition features coverage of technologies developed over the last decade since the first edition appeared, including: Immersion Lithography 157nm Lithography Electron Projection Lithography (EPL) Extreme Ultraviolet (EUV) Lithography Imprint Lithography Photoresists for 193nm and Immersion Lithography Scatterometry Microlithography: Science and Technology, Second Edition authoritatively covers the physics, chemistry, optics, metrology tools and techniques, resist processing and materials, and fabrication methods involved in the latest generations of microlithography such as immersion lithography and extreme ultraviolet (EUV) lithography. It also looks ahead to the possible future systems and technologies that will bring the next generations to fruition. Loaded with illustrations, equations, tables, and time-saving references to the most current literature, this book is the most comprehensive and reliable source for anyone, from student to seasoned professional, looking to achieve robust, accurate, and cost-effective microlithography processes and systems.
Download or read book Nanofabrication written by Ampere A. Tseng and published by World Scientific. This book was released on 2008 with total page 583 pages. Available in PDF, EPUB and Kindle. Book excerpt: Many of the devices and systems used in modern industry are becoming progressively smaller and have reached the nanoscale domain. Nanofabrication aims at building nanoscale structures, which can act as components, devices, or systems, in large quantities at potentially low cost. Nanofabrication is vital to all nanotechnology fields, especially for the realization of nanotechnology that involves the traditional areas across engineering and science. This is the first book solely dedicated to the manufacturing technology in nanoscale structures, devices, and systems and is designed to satisfy the growing demands of researchers, professionals, and graduate students.Both conventional and non-conventional fabrication technologies are introduced with emphasis on multidisciplinary principles, methodologies, and practical applications. While conventional technologies consider the emerging techniques developed for next generation lithography, non-conventional techniques include scanning probe microscopy lithography, self-assembly, and imprint lithography, as well as techniques specifically developed for making carbon tubes and molecular circuits and devices.
Download or read book Initiatives of Precision Engineering at the Beginning of a Millennium written by Ichiro Inasaki and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 996 pages. Available in PDF, EPUB and Kindle. Book excerpt: Faced with ever-increasing market demands, manufacturing industry is forced to seek innovation and technological breakthrough. This state-of-the-art text aims to integrate broad aspects of precision and production engineering to cope with rapid changes in market needs and technological developments as we enter the 21st century. It addresses basic theory, extensive research in advanced topics, industrial applications, and relevant surveys in related fields. Major subjects covered by this book include: Advanced manufacturing systems; Ultra-precision machining and micro machining; Nanotechnology for fabrication and measurement; Chemo-mechanical processes; Rapid prototyping technology; New materials and advanced processes; Computer-aided production engineering; Manufacturing process control; Planning. This volume contains the proceedings of the 10th International Conference on Precision Engineering (ICPE), which was held in July 2001, in Yokohama, Japan. ICPE is a well-established conference in the field of production and precision engineering, covering a wide range of topics for future-oriented manufacturing systems and processes; it is organized by the Japan Society for Precision Engineering (JSPE). This book can be used as a reference for graduate and undergraduate courses in precision and production engineering, and also for researchers and industrial engineers to capture current trends in this field.
