Download or read book A Unified Electrothermal Hot carrier Transport Model for Silicon Bipolar Transistor Simulations written by Yuen Po S. Szeto and published by . This book was released on 1989 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Simulation of Semiconductor Devices and Processes written by Siegfried Selberherr and published by Springer. This book was released on 1993 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Numerical Modeling of Hot Carrier Transport Phenomena in Submicron Silicon Bipolar Transistors written by Hsin-Hsiung Ou and published by . This book was released on 1986 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the 1994 Bipolar BiCMOS Circuits and Technology Meeting written by IEEE Electron Devices Society and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1994 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Research in Materials written by and published by . This book was released on 1990 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Research in Materials written by Massachusetts Institute of Technology and published by . This book was released on 1990 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Transient Electro Thermal Modeling of Bipolar Power Semiconductor Devices written by Tanya Kirilova Gachovska and published by Morgan & Claypool Publishers. This book was released on 2013-11-01 with total page 85 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.
Download or read book Hot Carrier Degradation in Semiconductor Devices written by Tibor Grasser and published by Springer. This book was released on 2014-10-29 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.
Download or read book IEICE Transactions on Electronics written by and published by . This book was released on 1999 with total page 1116 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Transient Electro Thermal Modeling on Power Semiconductor Devices written by Tanya Kirilova Gachovska and published by Springer Nature. This book was released on 2022-06-01 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.
Download or read book Process and Device Modeling for Microelectronics written by Giorgio Baccarani and published by Elsevier Publishing Company. This book was released on 1993 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 11 invited papers in this volume, written by experts in the field, report on current trends and significant research findings in the modeling and simulation of semiconductor devices and processes, monitoring the rapid scientific growth that has occurred in this area. The project "Materials and Devices for Solid-State Electronics" (MADESS), funded by Italy's National Research Council, started in 1987 and lasted 5 years. The project addressed five main research areas: VLSI Technology and Device Physics; Microwave and Optoelectronic Devices; Sensors; Semiconductor Power Devices; and Reliability and Diagnostics. Encompassing a large spectrum of activities ranging from material science to system architecture, research units included universities, public research laboratories and industry. The amount of resources made available by the project to the scientific community in the above areas has turned out to be a major impetus for growth in this scientific field. In addition, it has enhanced various forms of cooperation between research and industry, contributing to the development of a new consciousness concerning the role of microelectronics in modern society. The contributions in this volume are of worldwide interest, and will help to stimulate future research and analysis in this field.
Download or read book Science Abstracts written by and published by . This book was released on 1995 with total page 1360 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Numerical Modeling of Carrier Transport in Submicron Bipolar Transistors written by Phung Nguyen and published by . This book was released on 1985 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 1860 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Index to IEEE Publications written by Institute of Electrical and Electronics Engineers and published by . This book was released on 1997 with total page 1462 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues for 1973- cover the entire IEEE technical literature.
Download or read book ESD in Silicon Integrated Circuits written by E. Ajith Amerasekera and published by John Wiley & Sons. This book was released on 2002-05-22 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: * Examines the various methods available for circuit protection, including coverage of the newly developed ESD circuit protection schemes for VLSI circuits. * Provides guidance on the implementation of circuit protection measures. * Includes new sections on ESD design rules, layout approaches, package effects, and circuit concepts. * Reviews the new Charged Device Model (CDM) test method and evaluates design requirements necessary for circuit protection.
Download or read book Bibliographic Guide to Computer Science written by and published by . This book was released on 1990 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
