Download or read book A Transistor Low Frequency Parameter Tester written by Harold D. Drevecky and published by . This book was released on 1963 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chinese Standard GB GB T GBT JB JB T YY HJ NB HG QC SL SN SH JJF JJG CJ TB YD YS NY FZ JG QB SJ SY DL AQ CB GY JC JR JT written by https://www.chinesestandard.net and published by https://www.chinesestandard.net. This book was released on 2018-01-01 with total page 7290 pages. Available in PDF, EPUB and Kindle. Book excerpt: This document provides the comprehensive list of Chinese National Standards and Industry Standards (Total 17,000 standards).
Download or read book Measurements of Low Frequency Small signal Transistor Parameters and Their Relation to Theory written by Jacques Gilbert and published by . This book was released on 1957 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: "The purpose intended by the author in this work is an investigation of the adequacy of the first-order theory of junction transistor action to predict within an acceptable degree of accuracy the behaviour with operating conditions of the various parameters of the junction transistor equivalent circuit. A large amount of work has already been done in this direction, but the object of the majority of the experimenters was to arrive at a suitable set of design equations. [...]" --
Download or read book Parameter Extraction and Complex Nonlinear Transistor Models written by Gunter Kompa and published by Artech House. This book was released on 2019-12-31 with total page 610 pages. Available in PDF, EPUB and Kindle. Book excerpt: All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.
Download or read book DOFL Technical Review written by and published by . This book was released on 1957 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book JJ JJ T JJT Product Catalog Translated English of Chinese Standard JJ JJ T JJT written by https://www.chinesestandard.net and published by https://www.chinesestandard.net. This book was released on 2018-01-01 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: This document provides the comprehensive list of Chinese Industry Standards - Category: JJ; JJ/T; JJT.
Download or read book Technical Abstract Bulletin written by and published by . This book was released on with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Radio Frequency Transistors written by Norman Dye and published by Elsevier. This book was released on 2001-03-08 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt: Radio Frequency Transistors: Principles and Practical Applications is a complete tool kit for successful RF circuit design. As cellular and satellite communications fields continue to expand, the need for RF circuit design grows. Radio Frequency Transistors contains a wealth of practical design information based on years of experience from authors who have worked with the leading manufacturers of RF components. The book focuses primarily on the more difficult area of high power transistor amplifier design and construction. An entire chapter devoted solely to LDMOS high power RF transistors has been added to the new edition. A comparison is given between LDMOS FETs, TMOS FETs and bipolar transistors, showing clearly why LDMOS is the designer's choice for high power, linear amplifiers in today's rapidly expanding digital world of communications. Coverage also includes applications of LDMOS RF high power transistors in current generation cellular technologies, the design of LDMOS high power amplifiers, and comments about the latest efforts to model LDMOS RF power devices. Other topics covered include the selection of matched high power RF transistors, input impedance matching of high power transistors, interstage matching, and capacitors and inductors at radio frequencies. - Fully updated to include the newest cutting edge technology of RF circuit design - Contains practical, hands-on design advice to help you save time, money and resources - Written by engineers for engineers to use in the field
Download or read book Nonlinear Transistor Model Parameter Extraction Techniques written by Matthias Rudolph and published by Cambridge University Press. This book was released on 2011-10-13 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.
Download or read book The Effect of Extrinsic Parameters on the Frequency Response of Drift Transistors written by Daniel Frederick Singer and published by . This book was released on 1959 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book GB GB T GBT Chinese Standard English translated version Catalog written by Dr. Meng Yongye and published by www.codeofchina.com. This book was released on 2018-05-03 with total page 3290 pages. Available in PDF, EPUB and Kindle. Book excerpt: All English-translated Chinese codes are available at: www.codeofchina.com
Download or read book Nanoelectronics written by and published by Elsevier. This book was released on 2018-10-05 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoelectronics: Devices, Circuits and Systems explores current and emerging trends in the field of nanoelectronics, from both a devices-to-circuits and circuits-to-systems perspective. It covers a wide spectrum and detailed discussion on the field of nanoelectronic devices, circuits and systems. This book presents an in-depth analysis and description of electron transport phenomenon at nanoscale dimensions. Both qualitative and analytical approaches are taken to explore the devices, circuit functionalities and their system applications at deep submicron and nanoscale levels. Recent devices, including FinFET, Tunnel FET, and emerging materials, including graphene, and its applications are discussed. In addition, a chapter on advanced VLSI interconnects gives clear insight to the importance of these nano-transmission lines in determining the overall IC performance. The importance of integration of optics with electronics is elucidated in the optoelectronics and photonic integrated circuit sections of this book. This book provides valuable resource materials for scientists and electrical engineers who want to learn more about nanoscale electronic materials and how they are used. - Shows how electronic transport works at the nanoscale level - Demonstrates how nanotechnology can help engineers create more effective circuits and systems - Assesses the most commonly used nanoelectronic devices, explaining which is best for different situations
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1991 with total page 902 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Small signal Transistor Characterization for the Hf and Vhf Range written by Richard L. Brayden and published by . This book was released on 1965 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt: A technique for the high-frequency characterization of small-signal transistors in the range of 3 to 300 Mc is proposed. The approach presented substitutes relatively accurate low frequency measurements for the normally hard to measure high frequency four-pole parameters. These low frequency measurements in conjunction with a derived set of 'y' parameter expressions can be used to accurately characterize the frequency variation of a transistor's four-pole parameters over the specified frequency range. An equally accurate characterization based on an equivalent circuit is relatively complex. The theoretical fourpole parameters obtained for both a germanium mesa and a silicon planar transistor are compared to the measured four-pole parameters obtained from an extremely accurate measuring set. The results show that an inaccuracy of five percent can be expected in most cases between the predicted and measured fourpole parameters. (Author).
Download or read book Government wide Index to Federal Research Development Reports written by and published by . This book was released on 1967 with total page 1352 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book NASA Scientific and Technical Reports written by United States. National Aeronautics and Space Administration Scientific and Technical Information Division and published by . This book was released on 1967 with total page 2300 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Selected Listing of NASA Scientific and Technical Reports for written by United States. National Aeronautics and Space Administration. Scientific and Technical Information Division and published by . This book was released on 1966 with total page 2088 pages. Available in PDF, EPUB and Kindle. Book excerpt:
