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Book Study on the Characteristics of Low Temperature Polycrystalline Silicon Tunnel Thin Film Transistors Via Green Nanoseconds Laser Crystallization

Download or read book Study on the Characteristics of Low Temperature Polycrystalline Silicon Tunnel Thin Film Transistors Via Green Nanoseconds Laser Crystallization written by and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Study on the Characteristics of Low Temperature Polycrystalline Germanium Thin Film Transistors with Solid State Crystallization and Excimer Laser Crystallization

Download or read book Study on the Characteristics of Low Temperature Polycrystalline Germanium Thin Film Transistors with Solid State Crystallization and Excimer Laser Crystallization written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Study on the Characteristics of Low Temperature Polycrystalline Silicon Thin Film Transistors with the Location Controlled Grain Boundary Via Green Nanoseconds Laser Crystallization

Download or read book Study on the Characteristics of Low Temperature Polycrystalline Silicon Thin Film Transistors with the Location Controlled Grain Boundary Via Green Nanoseconds Laser Crystallization written by and published by . This book was released on 2020 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Kinetics of Silicide induced Crystallization of Polycrystalline Thin Film Transistors Fabricated from Amorphous Chemical Vapor Deposition Silicon

Download or read book Kinetics of Silicide induced Crystallization of Polycrystalline Thin Film Transistors Fabricated from Amorphous Chemical Vapor Deposition Silicon written by Hansuk Kim and published by . This book was released on 1999 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Thin Film Transistor Technologies VI

Download or read book Thin Film Transistor Technologies VI written by Yue Kuo and published by The Electrochemical Society. This book was released on 2003 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Modeling of Polysilicon Thin film Transistors Formed by Grain Enhancement Technology metal induced Lateral Crystallization

Download or read book Modeling of Polysilicon Thin film Transistors Formed by Grain Enhancement Technology metal induced Lateral Crystallization written by Chun Fai Cheng and published by . This book was released on 2004 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Modeling of Low Temperature Polysilicon Thin Film Transistors

Download or read book Modeling of Low Temperature Polysilicon Thin Film Transistors written by 邱柏倫 and published by . This book was released on 2019 with total page 47 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Controlled Growth and Orientation in Aluminum mediated Crystallization of Silicon Nanowires and Thin Films

Download or read book Controlled Growth and Orientation in Aluminum mediated Crystallization of Silicon Nanowires and Thin Films written by Mel Hainey and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal-mediated silicon crystallization has received extensive study as a means to form silicon wires and thin films for electronic and photovoltaic applications. Typical metals used in these processes, such as gold, silver, nickel, and copper, are expensive and act as deep-level traps in silicon, making incorporation into the final silicon crystal undesirable. In contrast, aluminum is earth-abundant and acts as a p-type dopant in silicon, and the low Al-Si eutectic temperature (577C) enables silicon crystallization under conditions compatible with a wide variety of substrates.In this thesis, aluminum-mediated silicon nanowire and thin film growth is investigated, and the effects of growth parameters such as temperature, pressure, and substrate surface energy on nanowire orientation and morphology and thin film morphology are investigated. In particular, through controlled growth temperature, reactor pressure, and silane partial pressure, growth on aluminum-catalyzed silicon nanowires in high energy growth directions such as 110 and 100 can be realized. Wires grown in high-energy growth directions have unique morphologies that suggest a different growth mechanism than the standard vapor-liquid-solid nanowire growth mechanism. Because these wires are grown in a region with partially depleted silane concentrations, this regime is described as silane-depleted vapor-liquid-solid growth. Along with promoting growth in high energy growth directions, reactor temperature and pressure can be used to change the shape of 111 wires to pyramids. These pyramids have improved anti-reflective properties compared to vertical nanowire arrays, enabling black silicon textures to be grown on silicon substrates. Because the wires and pyramids are p-type, growth on n-type substrates enables black silicon solar cells to be fabricated in a process that combines texturing and junction formation into a single step.Aluminum-induced crystallization of silicon thin films offers a unique method for producing highly (111) oriented polycrystalline thin films on amorphous substrates. Al and a-Si are deposited on glass or other substrates, and then annealed below the Al-Si eutectic temperature. For film thicknesses below 50nm, the a-Si diffuses through the Al film and nucleates at the Al/substrate interface. By using plasma surface treatments to change the surface energies of the fused quartz substrates, silicon crystallization rates and grain sizes can be manipulated. Furthermore, by combining multiple surface treatments on a single substrate, preferential crystallization at the low-energy interface can be realized, allowing for the formation of patterned AIC-films from uniform, continuous initial a-Si and Al layers.Finally, along with pattern formation, these AIC-Si films are able to act as seed layers for III-nitride semiconductor growth on fused quartz and other substrates. Through use of an AlN buffer layer, highly c-axis oriented GaN films can be grown using metalorganic chemical vapor deposition on AIC-Si substrates. Post growth characterization indicates that the GaN films follow the template provided by the AIC-Si films, with uniform surface normal orientation and random in-plane orientation. Defect analysis suggests that threading dislocation densities within grains are comparable to GaN grown on bulk Si (111) substrates. Additional studies have extended the GaN on AIC-Si process to other substrates, including oxidized Si (001) and polycrystalline diamond, with GaN films showing similar morphologies to those grown on AIC-Si on fused quartz.Overall, this thesis demonstrates how aluminum-mediated crystallization of silicon can be used to fabricate thin films and nanowires with a variety of orientations and morphologies. Furthermore, the initial demonstration of these wires and thin films in photovoltaic and electronic applications is also presented. Ultimately, aluminum-mediated silicon crystallization is demonstrated to be a flexible, controllable approach for producing a variety of technologically relevant nanowires and thin films.

Book Metal Induced Crystallization and Polysilicon Thin Film Transistors

Download or read book Metal Induced Crystallization and Polysilicon Thin Film Transistors written by Bo Zhang and published by . This book was released on 2009-05-01 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nowadays,active-matrix addressing using a-Si TFTs is dominating in the flat panel display markets. However, low temperature polysilicon has been proposed and considered to be a promising alternative technology. Metal induced crystallization (MIe is one of the methods to obtain high quality polysilicon films at low temperatures. A few technologies are presented in this monograph, which improve the quality of MIC polysilicon film and hence the performance of TFTs built on. Amelioration of MIC processes has been made to produce high performance polysilicon TFTs using solution based MIC (SMIe and defined-grain MIC (DG-MIe methods. Novel post-annealing technologies are also introduced to reduce the micro-defects in MIC polysilicon film and hence to achieve better performance. These technologies include YAG laser post-annealing and flash lamp post-annealing. Particularly, it is the first time to report the application of flash lamp annealing technology in the fabrication of low temperature polysilicon and TFTs.

Book High Performance Thin Film Transistors Using Ni Silicide for Liquid Crystal Displays

Download or read book High Performance Thin Film Transistors Using Ni Silicide for Liquid Crystal Displays written by Jin Jang and published by . This book was released on 2000 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Ni-silicide of a sheet resistance of 7 Omega/square can be formed at 230 deg C on n(+) a-Si:H and thus can be applied to gate and source/drain contacts for high performance TFTs. Because of its low resistance it is possible to make a self-alignment between gate and source/drain which lead to a coplanar a-Si:H TFT having a low parasitic capacitance between them. The NiSi2 precipitates can be formed on a-Si:H at around 350 deg C and needlelike Si crystallites are grown as a result of the migration of the NiSi2 precipitates though a-Si:H network. Amorphous silicon can be crystallized at 500 deg C in 10 minutes in a modest electric field. The low temperature poly-Si TFT with a field effect mobility of 120 sq cm/Vs has been demonstrated using the low temperature poly-Si.

Book Novel Low Temperature Polysilicon Thin film Transistors for System on glass Large area Microelectronic Applications

Download or read book Novel Low Temperature Polysilicon Thin film Transistors for System on glass Large area Microelectronic Applications written by Chunxiang Zhu and published by . This book was released on 2000 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Low temperature processed Thin film Transistors

Download or read book Low temperature processed Thin film Transistors written by and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: