Download or read book A Study of Deep Levels in Semi insulating Liquid encapsulated Czochralski grown Gallium Arsenide by Photo induced Transient Spectroscopy written by Michael Robert Burd and published by . This book was released on 1984 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defect Recognition and Image Processing in Semiconductors 1997 written by J. Doneker and published by Routledge. This book was released on 2017-11-22 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.
Download or read book Characterisation of Deep Levels in Undoped Semi insulating Liquid Encapsulated Czochralski Gallium Arsenide written by J. S. Pooni and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Studies of Deep Levels in Semi insulating Gallium Arsenide by Photoluminescence and Photoluminescence Excitation Spectroscopy written by Yeh-Jen Kao and published by . This book was released on 1991 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advances in Imaging and Electron Physics written by and published by Academic Press. This book was released on 1999-09-28 with total page 473 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Imaging & Electron Physics merges two long-running serials--Advances in Electronics & Electron Physics and Advances in Optical & Electron Microscopy. The series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science and digital image processing, electromagnetic wave propagation, electron microscopy, and the computing methods used in all these domains.
Download or read book Development of a Deep Level Transient Spectrometer and Some Deep Level Studies of Gallium Arsenide written by Venkataramana Reddy Chavva and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Development of a Deep Level Transient Spectrometer and Some Deep Level Studies of Gallium Arsenide" by Venkataramana Reddy, Chavva, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3121125 Subjects: Transients (Dynamics) Spectrum analysis Gallium arsenide semiconductors
Download or read book The Journal of Physics and Chemistry of Solids written by and published by . This book was released on 1988 with total page 872 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Deep Level Transient Spectroscopy Studies of Gallium Arsenide and Silicon Carbide written by Venkataramana Reddy Chavva and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Deep Level Transient Spectroscopy Studies of Gallium Arsenide and Silicon Carbide" by Venkataramana Reddy, Chavva, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3123559 Subjects: Gallium arsenide Silicon carbide Spectrum analysis Rapid thermal processing
Download or read book Dissertation Abstracts International written by and published by . This book was released on 1987 with total page 564 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The GEC Journal of Research written by and published by . This book was released on 1988 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Surface interface States and the Hall effect Measurement of Epitaxial and Semi insulating Liquid encapsulated Czochralski Gallium Arsenide written by William Raymond Miller and published by . This book was released on 1991 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt: The effect of surface-potential changes on the Hall-effect measurement of n-type and p-type epitaxial GaAs and undoped and Cr-doped semi-insulating (SI) LEC GaAs has been studied. The surface-potential changes were induced by wet chemical treatments in ammonium hydroxide and hydrogen peroxide to modify the surface-interface state distribution. The experimental results for epitaxial GaAs are shown to be well-explained by a mathematical model based on the advanced unified defect (AUD) model of the surface-interface states. The same surface-interface state model has been used in a detailed theoretical model for surface effects, of a magnitude not previously reported in the literature, seen in SI LEC GaAs. The agreement between the theoretical results and experimental data provides strong support for the surface-interface state model used here, relative to a variety of other models proposed in the literature, and demonstrates its practicality as the first "working" mathematical model of surface-interface states in GaAs.
Download or read book Liquid Encapsulated Czochralski Growth Studies of Gallium Arsenide and Characterization of Silicon Dioxide Inclusions written by Lei Ping Lai and published by . This book was released on 1995 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Studies of Deep Levels in Semi insulating Gallium Arsenide written by Chin Che Tin and published by . This book was released on 1987 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Deep Level Transient Spectroscopy of Gallium Arsenide written by M. Henini and published by . This book was released on 1984 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1987 with total page 938 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Surface Photovoltage Spectroscopy Applied to Gallium Arsenide Surfaces written by and published by . This book was released on 1975 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Development of a Deep Level Transient Spectrometer and Some Deep Level Studies of Gallium Arsenide written by Venkataramana Reddy Chavva and published by . This book was released on 1993 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
