Download or read book Gallium Nitride GaN written by Farid Medjdoub and published by CRC Press. This book was released on 2017-12-19 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.

Download or read book Power Amplifiers for the S C X and Ku bands written by Mladen Božanić and published by Springer. This book was released on 2015-12-29 with total page 347 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a detailed review of power amplifiers, including classes and topologies rarely covered in books, and supplies sufficient information to allow the reader to design an entire amplifier system, and not just the power amplification stage. A central aim is to furnish readers with ideas on how to simplify the design process for a preferred power amplifier stage by introducing software-based routines in a programming language of their choice. The book is in two parts, the first focusing on power amplifier theory and the second on EDA concepts. Readers will gain enough knowledge of RF and microwave transmission theory, principles of active and passive device design and manufacturing, and power amplifier design concepts to allow them to quickly create their own programs, which will help to accelerate the transceiver design process. All circuit designers facing the challenge of designing an RF or microwave power amplifier for frequencies from 2 to 18 GHz will find this book to be a valuable asset.

Download or read book The Electrical Engineering Handbook Six Volume Set written by Richard C. Dorf and published by CRC Press. This book was released on 2018-12-14 with total page 3672 pages. Available in PDF, EPUB and Kindle. Book excerpt: In two editions spanning more than a decade, The Electrical Engineering Handbook stands as the definitive reference to the multidisciplinary field of electrical engineering. Our knowledge continues to grow, and so does the Handbook. For the third edition, it has grown into a set of six books carefully focused on specialized areas or fields of study. Each one represents a concise yet definitive collection of key concepts, models, and equations in its respective domain, thoughtfully gathered for convenient access. Combined, they constitute the most comprehensive, authoritative resource available. Circuits, Signals, and Speech and Image Processing presents all of the basic information related to electric circuits and components, analysis of circuits, the use of the Laplace transform, as well as signal, speech, and image processing using filters and algorithms. It also examines emerging areas such as text to speech synthesis, real-time processing, and embedded signal processing. Electronics, Power Electronics, Optoelectronics, Microwaves, Electromagnetics, and Radar delves into the fields of electronics, integrated circuits, power electronics, optoelectronics, electromagnetics, light waves, and radar, supplying all of the basic information required for a deep understanding of each area. It also devotes a section to electrical effects and devices and explores the emerging fields of microlithography and power electronics. Sensors, Nanoscience, Biomedical Engineering, and Instruments provides thorough coverage of sensors, materials and nanoscience, instruments and measurements, and biomedical systems and devices, including all of the basic information required to thoroughly understand each area. It explores the emerging fields of sensors, nanotechnologies, and biological effects. Broadcasting and Optical Communication Technology explores communications, information theory, and devices, covering all of the basic information needed for a thorough understanding of these areas. It also examines the emerging areas of adaptive estimation and optical communication. Computers, Software Engineering, and Digital Devices examines digital and logical devices, displays, testing, software, and computers, presenting the fundamental concepts needed to ensure a thorough understanding of each field. It treats the emerging fields of programmable logic, hardware description languages, and parallel computing in detail. Systems, Controls, Embedded Systems, Energy, and Machines explores in detail the fields of energy devices, machines, and systems as well as control systems. It provides all of the fundamental concepts needed for thorough, in-depth understanding of each area and devotes special attention to the emerging area of embedded systems. Encompassing the work of the world's foremost experts in their respective specialties, The Electrical Engineering Handbook, Third Edition remains the most convenient, reliable source of information available. This edition features the latest developments, the broadest scope of coverage, and new material on nanotechnologies, fuel cells, embedded systems, and biometrics. The engineering community has relied on the Handbook for more than twelve years, and it will continue to be a platform to launch the next wave of advancements. The Handbook's latest incarnation features a protective slipcase, which helps you stay organized without overwhelming your bookshelf. It is an attractive addition to any collection, and will help keep each volume of the Handbook as fresh as your latest research.

Download or read book Microwave Journal written by and published by . This book was released on 2001 with total page 798 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Distributed Power Amplifiers for RF and Microwave Communications written by Narendra Kumar and published by Artech House. This book was released on 2015-06-01 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: This new resource presents readers with all relevant information and comprehensive design methodology of wideband amplifiers. This book specifically focuses on distributed amplifiers and their main components, and presents numerous RF and microwave applications including well-known historical and recent architectures, theoretical approaches, circuit simulation, and practical implementation techniques. A great resource for practicing designers and engineers, this book contains numerous well-known and novel practical circuits, architectures, and theoretical approaches with detailed description of their operational principles.

Download or read book High power GaAs FET Amplifiers written by John L. B. Walker and published by Artech House Microwave Library. This book was released on 1993 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is intended for systems engineers, hybrid and monolithic power amplifier designers, engineers involved in the development of CAD programs, academics, and industrial and goverment researchers. The book is devoted exclusively to high power GaAs FET amplifier design, covering the subject comprehensively, including FET design, circuit design, thermal and reliability analysis, and systems applications.

Download or read book Microwave Circuit Design Using Linear and Nonlinear Techniques written by George D. Vendelin and published by John Wiley & Sons. This book was released on 2005-10-03 with total page 1080 pages. Available in PDF, EPUB and Kindle. Book excerpt: The ultimate handbook on microwave circuit design with CAD. Full of tips and insights from seasoned industry veterans, Microwave Circuit Design offers practical, proven advice on improving the design quality of microwave passive and active circuits-while cutting costs and time. Covering all levels of microwave circuit design from the elementary to the very advanced, the book systematically presents computer-aided methods for linear and nonlinear designs used in the design and manufacture of microwave amplifiers, oscillators, and mixers. Using the newest CAD tools, the book shows how to design transistor and diode circuits, and also details CAD's usefulness in microwave integrated circuit (MIC) and monolithic microwave integrated circuit (MMIC) technology. Applications of nonlinear SPICE programs, now available for microwave CAD, are described. State-of-the-art coverage includes microwave transistors (HEMTs, MODFETs, MESFETs, HBTs, and more), high-power amplifier design, oscillator design including feedback topologies, phase noise and examples, and more. The techniques presented are illustrated with several MMIC designs, including a wideband amplifier, a low-noise amplifier, and an MMIC mixer. This unique, one-stop handbook also features a major case study of an actual anticollision radar transceiver, which is compared in detail against CAD predictions; examples of actual circuit designs with photographs of completed circuits; and tables of design formulae.

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Download or read book High Efficiency RF and Microwave Solid State Power Amplifiers written by Paolo Colantonio and published by John Wiley & Sons. This book was released on 2009-07-08 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: Do you want to know how to design high efficiency RF and microwave solid state power amplifiers? Read this book to learn the main concepts that are fundamental for optimum amplifier design. Practical design techniques are set out, stating the pros and cons for each method presented in this text. In addition to novel theoretical discussion and workable guidelines, you will find helpful running examples and case studies that demonstrate the key issues involved in power amplifier (PA) design flow. Highlights include: Clarification of topics which are often misunderstood and misused, such as bias classes and PA nomenclatures. The consideration of both hybrid and monolithic microwave integrated circuits (MMICs). Discussions of switch-mode and current-mode PA design approaches and an explanation of the differences. Coverage of the linearity issue in PA design at circuit level, with advice on low distortion power stages. Analysis of the hot topic of Doherty amplifier design, plus a description of advanced techniques based on multi-way and multi-stage architecture solutions. High Efficiency RF and Microwave Solid State Power Amplifiers is: an ideal tutorial for MSc and postgraduate students taking courses in microwave electronics and solid state circuit/device design; a useful reference text for practising electronic engineers and researchers in the field of PA design and microwave and RF engineering. With its unique unified vision of solid state amplifiers, you won’t find a more comprehensive publication on the topic.

Download or read book Dynamic Power Supply Transmitters written by Earl McCune and published by Cambridge University Press. This book was released on 2015-05-21 with total page 495 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Power is dissipated (lost) when this current flows through any resistance, which includes the amplifier's transistor. This dissipated power is the product of the current in the load times the voltage difference between the supply voltage to the amplifier and the output signal voltage. When the voltage supplied to the amplifier is a constant value, and by far the most common design practice, the situation in Fig. 1-2a results. Power dissipation in the amplifier is maximum when the output signal voltage is 1/2 of the supply voltage. When the output signal voltage is higher, even though the current value is larger the voltage drop is less and the power dissipation is lower. Similarly, when the output signal voltage is small, even though the voltage drop is now large the current in the load is smaller and again the power dissipation is lower"--

Download or read book The Physics of Semiconductor Devices written by R. K. Sharma and published by Springer. This book was released on 2019-01-31 with total page 1260 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.

Download or read book Wide Bandgap Based Devices written by Farid Medjdoub and published by MDPI. This book was released on 2021-05-26 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices

Download or read book Load Pull Techniques with Applications to Power Amplifier Design written by Fadhel M. Ghannouchi and published by Springer Science & Business Media. This book was released on 2012-06-06 with total page 241 pages. Available in PDF, EPUB and Kindle. Book excerpt: This first book on load-pull systems is intended for readers with a broad knowledge of high frequency transistor device characterization, nonlinear and linear microwave measurements, RF power amplifiers and transmitters. Load-Pull Techniques with Applications to Power Amplifier Design fulfills the demands of users, designers, and researchers both from industry and academia who have felt the need of a book on this topic. It presents a comprehensive reference spanning different load-pull measurement systems, waveform measurement and engineering systems, and associated calibration procedures for accurate large signal characterization. Besides, this book also provides in-depth practical considerations required in the realization and usage of load-pull and waveform engineering systems. In addition, it also provides procedure to design application specific load-pull setup and includes several case studies where the user can customize architecture of load-pull setups to meet any specific measurement requirements. Furthermore, the materials covered in this book can be part of a full semester graduate course on microwave device characterization and power amplifier design.

Download or read book Broadband RF and Microwave Amplifiers written by Andrei Grebennikov and published by CRC Press. This book was released on 2017-07-12 with total page 750 pages. Available in PDF, EPUB and Kindle. Book excerpt: Broadband RF and Microwave Amplifiers provides extensive coverage of broadband radio frequency (RF) and microwave power amplifier design, including well-known historical and recent novel schematic configurations, theoretical approaches, circuit simulation results, and practical implementation strategies. The text begins by introducing two-port networks to illustrate the behavior of linear and nonlinear circuits, explaining the basic principles of power amplifier design, and discussing impedance matching and broadband power amplifier design using lumped and distributed parameters. The book then: Shows how dissipative or lossy gain-compensation-matching circuits can offer an important trade-off between power gain, reflection coefficient, and operating frequency bandwidth Describes the design of broadband RF and microwave amplifiers using real frequency techniques (RFTs), supplying numerous examples based on the MATLAB® programming process Examines Class-E power amplifiers, Doherty amplifiers, low-noise amplifiers, microwave gallium arsenide field-effect transistor (GaAs FET)-distributed amplifiers, and complementary metal-oxide semiconductor (CMOS) amplifiers for ultra-wideband (UWB) applications Broadband RF and Microwave Amplifiers combines theoretical analysis with practical design to create a solid foundation for innovative ideas and circuit design techniques.

Download or read book Phased Arrays for Radio Astronomy Remote Sensing and Satellite Communications written by Karl F. Warnick and published by Cambridge University Press. This book was released on 2018-07-26 with total page 471 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discover a modern approach to the analysis, modeling and design of high sensitivity phased arrays. Network theory, numerical methods and computational electromagnetic simulation techniques are uniquely combined to enable full system analysis and design optimization. Beamforming and array signal processing theory are integrated into the treatment from the start. Digital signal processing methods such as polyphase filtering and RFI mitigation are described, along with technologies for real-time hardware implementation. Key concepts from interferometric imaging used in radio telescopes are also considered. A basic development of theory and modeling techniques is accompanied by problem sets that guide readers in developing modeling codes that retain the simplicity of the classical array factor method while incorporating mutual coupling effects and interactions between elements. Combining current research trends with pedagogical material suitable for a first-year graduate course, this is an invaluable resource for students, teachers, researchers, and practicing RF/microwave and antenna design engineers.

Download or read book RF Power Semiconductor Generator Application in Heating and Energy Utilization written by Satoshi Horikoshi and published by Springer Nature. This book was released on 2020-03-26 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a specialized book for researchers and technicians of universities and companies who are interested in the fundamentals of RF power semiconductors, their applications and market penetration.Looking around, we see that products using vacuum tube technology are disappearing. For example, branch tube TVs have changed to liquid crystal TVs, and fluorescent light have turned into LED. The switch from vacuum tube technology to semiconductor technology has progressed remarkably. At the same time, high-precision functionalization, miniaturization and energy saving have advanced. On the other hand, there is a magnetron which is a vacuum tube device for generating microwaves. However, even this vacuum tube technology has come to be replaced by RF power semiconductor technology. In the last few years the price of semiconductors has dropped sharply and its application to microwave heating and energy fields will proceed. In some fields the transition from magnetron microwave oscillator to semiconductor microwave oscillator has already begun. From now on this development will progress remarkably. Although there are several technical books on electrical systems that explain RF power semiconductors, there are no books yet based on users' viewpoints on actual microwave heating and energy fields. In particular, none have been written about exact usage and practical cases, to answer questions such as "What are the advantages and disadvantages of RF power semiconductor oscillator?", "What kind of field can be used?" and the difficulty of the market and application. Based on these issues, this book explains the RF power semiconductors from the user's point of view by covering a very wide range of fields.

Download or read book Handbook for III V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots