Download or read book Semiconductor Memories and Systems written by Andrea Redaelli and published by Woodhead Publishing. This book was released on 2022-06-07 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Memories and Systems provides a comprehensive overview of the current state of semiconductor memory at the technology and system levels. After an introduction on market trends and memory applications, the book focuses on mainstream technologies, illustrating their current status, challenges and opportunities, with special attention paid to scalability paths. Technologies discussed include static random access memory (SRAM), dynamic random access memory (DRAM), non-volatile memory (NVM), and NAND flash memory. Embedded memory and requirements and system level needs for storage class memory are also addressed. Each chapter covers physical operating mechanisms, fabrication technologies, and the main challenges to scalability.Finally, the work reviews the emerging trends for storage class memory, mainly focusing on the advantages and opportunities of phase change based memory technologies. - Features contributions from experts from leading companies in semiconductor memory - Discusses physical operating mechanisms, fabrication technologies and paths to scalability for current and emerging semiconductor memories - Reviews primary memory technologies, including SRAM, DRAM, NVM and NAND flash memory - Includes emerging storage class memory technologies such as phase change memory

Download or read book FinFET Devices for VLSI Circuits and Systems written by Samar K. Saha and published by CRC Press. This book was released on 2020-07-15 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt: To surmount the continuous scaling challenges of MOSFET devices, FinFETs have emerged as the real alternative for use as the next generation device for IC fabrication technology. The objective of this book is to provide the basic theory and operating principles of FinFET devices and technology, an overview of FinFET device architecture and manufacturing processes, and detailed formulation of FinFET electrostatic and dynamic device characteristics for IC design and manufacturing. Thus, this book caters to practicing engineers transitioning to FinFET technology and prepares the next generation of device engineers and academic experts on mainstream device technology at the nanometer-nodes.

Download or read book Network and Parallel Computing written by Ching-Hsien Hsu and published by Springer. This book was released on 2014-08-23 with total page 640 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book constitutes the proceedings of the 11th IFIP WG 10.3 International Conference on Network and Parallel Computing, NPC 2014, held in Ilan, Taiwan, in September 2014. The 42 full papers and 24 poster papers presented were carefully reviewed and selected from 196 submissions. They are organized in topical sections on systems, networks, and architectures, parallel and multi-core technologies, virtualization and cloud computing technologies, applications of parallel and distributed computing, and I/O, file systems, and data management.

Download or read book Nanosystems Design and Technology written by Giovanni DeMicheli and published by Springer Science & Business Media. This book was released on 2009-09-01 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanosystems use new, nanoscopic electrical and/or mechanical devices which, as constituents of electronic and electromechanical systems, find application primarily in computing, embedded control and biomedical data acquisition. In particular, this book will deal with the characterization and patterning of these materials from an engineering perspective, with the objective of creating operational prototypes and products. The book will integrate various nano technologies on materials, devices and systems and identify key areas and results. The book will describe different design aspects for integrated systems on silicon, as well as on heterogeneous platforms including, but not limited to, electrical, optical, micromechanical and biological components in various forms and mixtures. By associating research topics from differing horizons, the book will provide a unique opportunity to bridge the gap between electronics/electrical engineering and materials science. The book will include topics at the intersection of these disciplines, and will interface with computer science, biology and medicine.

Download or read book Advanced Nanoelectronics written by Muhammad Mustafa Hussain and published by John Wiley & Sons. This book was released on 2019-01-04 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Brings novel insights to a vibrant research area with high application potential?covering materials, physics, architecture, and integration aspects of future generation CMOS electronics technology Over the last four decades we have seen tremendous growth in semiconductor electronics. This growth has been fueled by the matured complementary metal oxide semiconductor (CMOS) technology. This comprehensive book captures the novel device options in CMOS technology that can be realized using non-silicon semiconductors. It discusses germanium, III-V materials, carbon nanotubes and graphene as semiconducting materials for three-dimensional field-effect transistors. It also covers non-conventional materials such as nanowires and nanotubes. Additionally, nanoelectromechanical switches-based mechanical relays and wide bandgap semiconductor-based terahertz electronics are reviewed as essential add-on electronics for enhanced communication and computational capabilities. Advanced Nanoelectronics: Post-Silicon Materials and Devices begins with a discussion of the future of CMOS. It continues with comprehensive chapter coverage of: nanowire field effect transistors; two-dimensional materials for electronic applications; the challenges and breakthroughs of the integration of germanium into modern CMOS; carbon nanotube logic technology; tunnel field effect transistors; energy efficient computing with negative capacitance; spin-based devices for logic, memory and non-Boolean architectures; and terahertz properties and applications of GaN. -Puts forward novel approaches for future, state-of-the-art, nanoelectronic devices -Discusses emerging materials and architectures such as alternate channel material like germanium, gallium nitride, 1D nanowires/tubes, 2D graphene, and other dichalcogenide materials and ferroelectrics -Examines new physics such as spintronics, negative capacitance, quantum computing, and 3D-IC technology -Brings together the latest developments in the field for easy reference -Enables academic and R&D researchers in semiconductors to "think outside the box" and explore beyond silica An important resource for future generation CMOS electronics technology, Advanced Nanoelectronics: Post-Silicon Materials and Devices will appeal to materials scientists, semiconductor physicists, semiconductor industry, and electrical engineers.

Download or read book Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 11 written by Takeshi Hattori and published by The Electrochemical Society. This book was released on 2009-09 with total page 407 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions includes papers presented during the 11th International Symposium on Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing held during the ECS Fall Meeting in Vienna, Austria, October 4-9, 2009.

Download or read book 3D Flash Memories written by Rino Micheloni and published by Springer. This book was released on 2016-05-26 with total page 391 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book walks the reader through the next step in the evolution of NAND flash memory technology, namely the development of 3D flash memories, in which multiple layers of memory cells are grown within the same piece of silicon. It describes their working principles, device architectures, fabrication techniques and practical implementations, and highlights why 3D flash is a brand new technology. After reviewing market trends for both NAND and solid state drives (SSDs), the book digs into the details of the flash memory cell itself, covering both floating gate and emerging charge trap technologies. There is a plethora of different materials and vertical integration schemes out there. New memory cells, new materials, new architectures (3D Stacked, BiCS and P-BiCS, 3D FG, 3D VG, 3D advanced architectures); basically, each NAND manufacturer has its own solution. Chapter 3 to chapter 7 offer a broad overview of how 3D can materialize. The 3D wave is impacting emerging memories as well and chapter 8 covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures can be a challenge for the human brain: this is way all these chapters contain a lot of bird’s-eye views and cross sections along the 3 axes. The second part of the book is devoted to other important aspects, such as advanced packaging technology (i.e. TSV in chapter 9) and error correction codes, which have been leveraged to improve flash reliability for decades. Chapter 10 describes the evolution from legacy BCH to the most recent LDPC codes, while chapter 11 deals with some of the most recent advancements in the ECC field. Last but not least, chapter 12 looks at 3D flash memories from a system perspective. Is 14nm the last step for planar cells? Can 100 layers be integrated within the same piece of silicon? Is 4 bit/cell possible with 3D? Will 3D be reliable enough for enterprise and datacenter applications? These are some of the questions that this book helps answering by providing insights into 3D flash memory design, process technology and applications.

Download or read book Emerging Memory Technologies written by Yuan Xie and published by Springer Science & Business Media. This book was released on 2013-10-21 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explores the design implications of emerging, non-volatile memory (NVM) technologies on future computer memory hierarchy architecture designs. Since NVM technologies combine the speed of SRAM, the density of DRAM, and the non-volatility of Flash memory, they are very attractive as the basis for future universal memories. This book provides a holistic perspective on the topic, covering modeling, design, architecture and applications. The practical information included in this book will enable designers to exploit emerging memory technologies to improve significantly the performance/power/reliability of future, mainstream integrated circuits.

Download or read book Handbook of 3D Integration Volume 3 written by Philip Garrou and published by John Wiley & Sons. This book was released on 2014-07-21 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt: Edited by key figures in 3D integration and written by top authors from high-tech companies and renowned research institutions, this book covers the intricate details of 3D process technology. As such, the main focus is on silicon via formation, bonding and debonding, thinning, via reveal and backside processing, both from a technological and a materials science perspective. The last part of the book is concerned with assessing and enhancing the reliability of the 3D integrated devices, which is a prerequisite for the large-scale implementation of this emerging technology. Invaluable reading for materials scientists, semiconductor physicists, and those working in the semiconductor industry, as well as IT and electrical engineers.

Download or read book Handbook of Wafer Bonding written by Peter Ramm and published by John Wiley & Sons. This book was released on 2011-11-17 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: The focus behind this book on wafer bonding is the fast paced changes in the research and development in three-dimensional (3D) integration, temporary bonding and micro-electro-mechanical systems (MEMS) with new functional layers. Written by authors and edited by a team from microsystems companies and industry-near research organizations, this handbook and reference presents dependable, first-hand information on bonding technologies. Part I sorts the wafer bonding technologies into four categories: Adhesive and Anodic Bonding; Direct Wafer Bonding; Metal Bonding; and Hybrid Metal/Dielectric Bonding. Part II summarizes the key wafer bonding applications developed recently, that is, 3D integration, MEMS, and temporary bonding, to give readers a taste of the significant applications of wafer bonding technologies. This book is aimed at materials scientists, semiconductor physicists, the semiconductor industry, IT engineers, electrical engineers, and libraries.

Download or read book Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond written by Guilei Wang and published by Springer Nature. This book was released on 2019-09-20 with total page 127 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.

Download or read book Computer Engineering and Technology written by Weixia Xu and published by Springer. This book was released on 2018-01-02 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book constitutes the refereed proceedings of the 21st CCF Conference on Computer Engineering and Technology, NCCET 2017, held in Xiamen, China, in August 2017. The 13 full papers presented were carefully reviewed and selected from 108 submissions. They address topics such as processor architecture; application specific processors; computer application and software optimization; technology on the horizon.

Download or read book Applications of Chalcogenides S Se and Te written by Gurinder Kaur Ahluwalia and published by Springer. This book was released on 2016-11-02 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces readers to a wide range of applications for elements in Group 16 of the periodic table, such as, optical fibers for communication and sensing, X-ray imaging, electrochemical sensors, data storage devices, biomedical applications, photovoltaics and IR detectors, the rationale for these uses, the future scope of their applications, and expected improvements to existing technologies. Following an introductory section, the book is broadly divided into three parts—dealing with Sulfur, Selenium, and Tellurium. The sections cover the basic structure of the elements and their compounds in bulk and nanostructured forms; properties that make these useful for various applications, followed by applications and commercial products. As the global technology revolution necessitates the search for new materials and more efficient devices in the electronics and semiconductor industry, Applications of Chalcogenides: S, Se, and Te is an ideal book for a wide range of readers in industry, government and academic research facilities looking beyond silicon for materials used in the electronic and optoelectronic industry as well as biomedical applications.

Download or read book Electromigration Inside Logic Cells written by Gracieli Posser and published by Springer. This book was released on 2016-11-26 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes new and effective methodologies for modeling, analyzing and mitigating cell-internal signal electromigration in nanoCMOS, with significant circuit lifetime improvements and no impact on performance, area and power. The authors are the first to analyze and propose a solution for the electromigration effects inside logic cells of a circuit. They show in this book that an interconnect inside a cell can fail reducing considerably the circuit lifetime and they demonstrate a methodology to optimize the lifetime of circuits, by placing the output, Vdd and Vss pin of the cells in the less critical regions, where the electromigration effects are reduced. Readers will be enabled to apply this methodology only for the critical cells in the circuit, avoiding impact in the circuit delay, area and performance, thus increasing the lifetime of the circuit without loss in other characteristics.

Download or read book Negative Capacitance Field Effect Transistors written by Young Suh Song and published by CRC Press. This book was released on 2023-10-31 with total page 149 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book aims to provide information in the ever-growing field of low-power electronic devices and their applications in portable devices, wireless communication, sensor, and circuit domains. Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications discusses low-power semiconductor technology and addresses state-of-the-art techniques such as negative capacitance field effect transistors and tunnel field effect transistors. The book is split into three parts. The first part discusses the foundations of low-power electronics, including the challenges and demands and concepts such as subthreshold swing. The second part discusses the basic operations of negative capacitance field effect transistors (NCFETs) and tunnel field effect transistors (TFETs). The third part covers industrial applications including cryogenics and biosensors with NC-FET. This book is designed to be a one-stop guide for students and academic researchers, to understand recent trends in the IT industry and semiconductor industry. It will also be of interest to researchers in the field of nanodevices such as NC-FET, FinFET, tunnel FET, and device–circuit codesign.

Download or read book Handbook of Thin Film Deposition written by Dominic Schepis and published by Elsevier. This book was released on 2024-10-08 with total page 428 pages. Available in PDF, EPUB and Kindle. Book excerpt: Handbook of Thin Film Deposition, Fifth Edition, is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry. When pursuing patents, there is a phase called 'reduction to practice' where the idea for a technology transitions from a concept to actual use. The section 'Thin Film Reduction to Practice' includes chapters that review the most relevant methods to fabricate thin films towards practical applications. Then, the latest applications of thin film deposition technologies are discussed. Handbook of Thin Film Deposition, 5th Edition is suitable for materials scientists and engineers in academia and working in semiconductor R&D. - Offers a practical survey of thin film technologies including design, fabrication, and reliability - Covers core processes and applications in the semiconductor industry and discusses latest advances in new thin film development - Features new chapters that review methods on front-end and back-end thin films

Download or read book Variation Aware Advanced CMOS Devices and SRAM written by Changhwan Shin and published by Springer. This book was released on 2016-06-06 with total page 141 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development. This book aims to provide the reader with a deep understanding of the major random variation sources, and the characterization of each random variation source. Furthermore, the book presents various CMOS device designs to surmount the random variation in future CMOS technology, emphasizing the applications to SRAM.