Download or read book Zinc Oxide based Resistive Switching Devices written by Yang Zhang and published by . This book was released on 2014 with total page 105 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, resistive switching (RS) memory devices have attracted increasing attentions due to their potential applications in the next-generation nonvolatile memory. Zinc Oxide (ZnO) - based RS devices possess promising features, such as well-controlled switching properties by in-situ doping and alloying, low-temperature fabrication processes, superior radiation hardness, and low cost. The goal of the research is to study the feasibility of using the transitional metal (TM) doped ZnO for making RS devices. The Fe-doped ZnO (FeZnO) is used to make the bipolar and unipolar RS. The FeZnO is grown through MOCVD. Fe is a deep-level donor in ZnO, and Fe doping leads to better device thermal stability and larger value at the high resistance state (HRS) for switching. For the Ag/FeZnO/Pt bipolar RS structures, the ratio of the HRS over the low resistance state (LRS) of 3.8×10^2 is achieved. The dominant conduction mechanisms are attributed to the Poole-Frenkel emission at the HRS and Ohmic behavior at the LRS, respectively. A FeZnO/MgO bi-layer (BL) is used to replace the FeZnO single layer (SL) to form an Ag/FeZnO/MgO/Pt bipolar RS structure. This BL device demonstrates a higher RHRS/RLRS ratio (~106) than the SL counterpart. For the Au/FeZnO/MgO/Pt unipolar RS device, the RHRS/RLRS ratio of 2.4×10^6 at 1V is achieved. In order to reduce the processing temperature, the Ni-doped ZnO/MgO BL structure is adapted to make the RS devices using the sputtering - MOCVD hybrid deposition. The Ni doping enhances the compensation of oxygen deficiency in ZnO, resulting in larger HRS values. By controlling the compliance current during the "SET" process, three different reversible RS modes, i.e. threshold switching, volatile switching, and memory switching are obtained. Compared with the memory switching, the volatile switching possesses lower power consumption and better HRS stability. Furthermore, the different compliance currents lead to the different LRS values, which could be used for the multi-level per storage cell applications. The electrical characteristics and microstructure analysis suggest that the compliance current setting affects the formation and rupture of the metallic filaments, leading to the conversion of different switching modes. The FeZnO switching resistor (R) is vertically integrated with a ZnO diode (D) to form the 1D1R structure, which overcomes the cross-talk in the 1R-based crossbar switching matrix. The 1D1R exhibits high RHRS/RLRS ratio, excellent rectifying characteristics, and robust retention. The new ZnO RS technology presents great impact on the future classes of memory devices for applications such as switching matrix, multi-level storage, and 3D non-volatile memory architecture.

Download or read book Investigation of Bipolar Resistive Switching in Zinc tin oxide for Resistive Random Access Memory written by Santosh Murali and published by . This book was released on 2012 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt: Resistive random access memory (RRAM) is a non-volatile memory technology based on resistive switching in a dielectric or semiconductor sandwiched between two different metals. Also known as memristors, these devices are potential candidates for a next-generation replacement for flash memory. In this thesis, bipolar resistive switching is reported for the first time in solution-deposited zinc-tin-oxide (ZTO). The impact of the compliance current on device operation, including the SET and RESET voltages, pre-SET, RESET and post-RESET currents, the resistance ratio between the low and high resistance states, retention, and the endurance, is investigated for an isolated Al dot/ZTO/Ir blanket device and for Al/ZTO/Pt crossbar RRAM devices. A gradual forming process is devised to improve device stability and performance. It is found that the device performance depends critically on the compliance current density that is used to limit the breakdown conduction during the SET operation. In addition, it was found that the conduction and switching mechanisms are consistent with the filament model of formation and rupture of conductive filaments.

Download or read book Resistive Switching Oxide Materials Mechanisms Devices and Operations written by Jennifer Rupp and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers' understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept: -Explains diffusive processes at room temperature and materials/materials combination in resistive switching; -Illustrates the role of defects in zero, one, and two dimensions; -Features applications of ReRAMs in engineering such as novel computing architectures.

Download or read book Advanced Memory Technology written by Ye Zhou and published by Royal Society of Chemistry. This book was released on 2023-10-09 with total page 641 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced memory technologies are impacting the information era, representing a vibrant research area of huge interest in the electronics industry. The demand for data storage, computing performance and energy efficiency is increasing exponentially and will exceed the capabilities of current information technologies. Alternatives to traditional silicon technology and novel memory principles are expected to meet the need of modern data-intensive applications such as “big data” and artificial intelligence (AI). Functional materials or methodologies may find a key role in building novel, high speed and low power consumption computing and data storage systems. This book covers functional materials and devices in the data storage areas, alongside electronic devices with new possibilities for future computing, from neuromorphic next generation AI to in-memory computing. Summarizing different memory materials and devices to emphasize the future applications, graduate students and researchers can systematically learn and understand the design, materials characteristics, device operation principles, specialized device applications and mechanisms of the latest reported memory materials and devices.

Download or read book Polymer Nanocomposite Materials written by Ye Zhou and published by John Wiley & Sons. This book was released on 2021-03-24 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: Polymer Nanocomposite Materials Discover an authoritative overview of zero-, one-, and two-dimensional polymer nanomaterials Polymer Nanocomposite Materials: Applications in Integrated Electronic Devices delivers an original and insightful treatment of polymer nanocomposite applications in energy, information, and biotechnology. The book systematically reviews the preparation and characterization of polymer nanocomposites from zero-, one-, and two-dimensional nanomaterials. The two distinguished editors have selected resources that thoroughly explore the applications of polymer nanocomposites in energy, information, and biotechnology devices like sensors, solar cells, data storage devices, and artificial synapses. Academic researchers and professional developers alike will enjoy one of the first books on the subject of this environmentally friendly and versatile new technology. Polymer Nanocomposite Materials discusses challenges associated with the devices and materials, possible strategies for future directions of the technology, and the possible commercial applications of electronic devices built on these materials. Readers will also benefit from the inclusion of: A thorough introduction to the fabrication of conductive polymer composites and their applications in sensors An exploration of biodegradable polymer nanocomposites for electronics and polymer nanocomposites for photodetectors Practical discussions of polymer nanocomposites for pressure sensors and the application of polymer nanocomposites in energy storage devices An examination of functional polymer nanocomposites for triboelectric nanogenerators and resistive switching memory Perfect for materials scientists and polymer chemists, Polymer Nanocomposite Materials: Applications in Integrated Electronic Devices will also earn a place in the libraries of sensor developers, electrical engineers, and other professionals working in the sensor industry seeking an authoritative one-stop reference for nanocomposite applications.

Download or read book Nano Semiconductors written by Krzysztof Iniewski and published by CRC Press. This book was released on 2018-09-03 with total page 600 pages. Available in PDF, EPUB and Kindle. Book excerpt: With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies. Taking into account the semiconductor industry’s transition from standard CMOS silicon to novel device structures—including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials—this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution from micro- to nanoelectronics. The book is divided into three parts that address: Semiconductor materials (i.e., carbon nanotubes, memristors, and spin organic devices) Silicon devices and technology (i.e., BiCMOS, SOI, various 3D integration and RAM technologies, and solar cells) Compound semiconductor devices and technology This reference explores the groundbreaking opportunities in emerging materials that will take system performance beyond the capabilities of traditional CMOS-based microelectronics. Contributors cover topics ranging from electrical propagation on CNT to GaN HEMTs technology and applications. Approaching the trillion-dollar nanotech industry from the perspective of real market needs and the repercussions of technological barriers, this resource provides vital information about elemental device architecture alternatives that will lead to massive strides in future development.

Download or read book Resistive switching in ZrO2 based metal oxide metal structures written by Irina Kärkkänen and published by Forschungszentrum Jülich. This book was released on 2014 with total page 151 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Zinc Compounds Advances in Research and Application 2013 Edition written by and published by ScholarlyEditions. This book was released on 2013-06-21 with total page 908 pages. Available in PDF, EPUB and Kindle. Book excerpt: Zinc Compounds—Advances in Research and Application: 2013 Edition is a ScholarlyBrief™ that delivers timely, authoritative, comprehensive, and specialized information about ZZZAdditional Research in a concise format. The editors have built Zinc Compounds—Advances in Research and Application: 2013 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about ZZZAdditional Research in this book to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Zinc Compounds—Advances in Research and Application: 2013 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.

Download or read book Nonlinear Circuits and Systems with Memristors written by Fernando Corinto and published by Springer Nature. This book was released on 2020-10-31 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents a new approach to the study of physical nonlinear circuits and advanced computing architectures with memristor devices. Such a unified approach to memristor theory has never been systematically presented in book form. After giving an introduction on memristor-based nonlinear dynamical circuits (e.g., periodic/chaotic oscillators) and their use as basic computing analogue elements, the authors delve into the nonlinear dynamical properties of circuits and systems with memristors and present the flux-charge analysis, a novel method for analyzing the nonlinear dynamics starting from writing Kirchhoff laws and constitutive relations of memristor circuit elements in the flux-charge domain. This analysis method reveals new peculiar and intriguing nonlinear phenomena in memristor circuits, such as the coexistence of different nonlinear dynamical behaviors, extreme multistability and bifurcations without parameters. The book also describes how arrays of memristor-based nonlinear oscillators and locally-coupled neural networks can be applied in the field of analog computing architectures, for example for pattern recognition. The book will be of interest to scientists and engineers involved in the conceptual design of physical memristor devices and systems, mathematical and circuit models of physical processes, circuits and networks design, system engineering, or data processing and system analysis.

Download or read book Resistive Switching written by Daniele Ielmini and published by John Wiley & Sons. This book was released on 2015-12-28 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt: With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.

Download or read book Nanoelectronic Materials Devices and Modeling written by Qiliang Li and published by MDPI. This book was released on 2019-07-15 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.

Download or read book Nanoscience And Technology A Collection Of Reviews From Nature Journals written by Peter Rodgers and published by World Scientific. This book was released on 2009-08-21 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains 35 review articles on nanoscience and nanotechnology that were first published in Nature Nanotechnology, Nature Materials and a number of other Nature journals. The articles are all written by leading authorities in their field and cover a wide range of areas in nanoscience and technology, from basic research (such as single-molecule devices and new materials) through to applications (in, for example, nanomedicine and data storage).

Download or read book Resistive Switching Characteristics of Transparent ZnO based Devices Enhanced by Electrode Engineering and Dopant written by and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Metal Oxides for Non volatile Memory written by Panagiotis Dimitrakis and published by Elsevier. This book was released on 2022-03-01 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory. Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems. Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more Provides an overview on the most relevant deposition methods, including sputtering, CVD, ALD and MBE Discusses the design and fabrication of metal oxides for wide breadth of non-volatile memory applications from 3-D flash technology, transparent memory and DRAM technology

Download or read book Recent Development in Optoelectronic Devices written by Ruby Srivastava and published by BoD – Books on Demand. This book was released on 2018-08-29 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book "Recent Developments in Optoelectronic Devices" is about the latest developments in optoelectronics. This book is divided into three categories: light emitting devices, sensors, and light harvesters. This book also discusses the theoretical aspects of device design for iridium complexes as organic light emitting diodes (OLEDs), strategies for developing novel nanostructured materials, silicon-rich oxide (SRO) electroluminescent devices, and multifunctional optoelectronic devices developed on resistive switching effects. The worldwide participation of authors has contributed to the unifying effect of science. Furthermore, interested readers will also find information on the screen printed technology using semiconductor devices, nonlinear phenomena in quantum devices, experimental set up of optoelectronics flexible logic gate to realize logic operations, autonomous vehicles, and the latest developments in perovskites as solar cells.

Download or read book Nonvolatile Memories written by Tseung-Yuen Tseng and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Handbook of Zinc Oxide and Related Materials written by Zhe Chuan Feng and published by CRC Press. This book was released on 2012-09-26 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: Through their application in energy-efficient and environmentally friendly devices, zinc oxide (ZnO) and related classes of wide gap semiconductors, including GaN and SiC, are revolutionizing numerous areas, from lighting, energy conversion, photovoltaics, and communications to biotechnology, imaging, and medicine. With an emphasis on engineering and materials science, Handbook of Zinc Oxide and Related Materials provides a comprehensive, up-to-date review of various technological aspects of ZnO. Volume Two focuses on devices and nanostructures created from ZnO and similar materials. The book covers various nanostructures, synthesis/creation strategies, device behavior, and state-of-the-art applications in electronics and optoelectronics. It also provides useful information on the device and nanoscale process and examines the fabrication of LEDs, LDs, photodetectors, and nanodevices. Covering key properties and important technologies of ZnO-based devices and nanoengineering, the handbook highlights the potential of this wide gap semiconductor. It also illustrates the remaining challenging issues in nanomaterial preparation and device fabrication for R&D in the twenty-first century.