Download or read book Yield Improvement in Chemical Mechanical Polishing Process Investigation of Wafer Scale written by Sutee Eamkajornsiri and published by . This book was released on 2002 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical mechanical polishing (CMP) is a planarization process that produces high quality surfaces both locally and globally. It is one of the key process steps during the fabrication of very large scale integrated (VLSI) chips in integrated circuit (IC) manufacturing. CMP consists of a chemical process and a mechanical process being performed together to reduce height variation across a wafer. High and reliable wafer yield, which is dependent upon uniformity of the material removal rate across the entire wafer, is of critical importance in the CMP process. In this thesis, the wafer pad contact is modeled as the indentation of a rigid indenter on an elastic half-space. The model predictions are first verified against experimental observations. Simulation results for wafer yield under open loop processing conditions are presented. Wafer curvature is identified as a key design variable influencing the spatial distribution of the material removal rate. The load control, the curvature control, the combined curvature and load strategies are investigated for improving the wafer yield. It utilizes an objective function based on minimizing a moment function that represents the wafer curvature and the height of the oxide layer left for material removal. Simulation results indicate that curvature control can improve wafer yield significantly, and is more effective that just the load control.
Download or read book Yield Improvement of Chemical Mechanical Planarization Processes written by Sutee Eamkajornsiri and published by . This book was released on 2005 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical mechanical polishing (CMP) is a planarization process that produces high quality surfaces both locally and globally. It is one of the key process steps during fabrication of very large scale integrated (VLSI) chips in integrated circuit (IC) manufacturing. High and reliable wafer yield is critical in the CMP process; it is dependent upon uniformity of material removal rate across the entire wafer. The focus on this research is the development of control algorithm for CMP process. Wafer-scale and die-scale models are the two scales used in this study. To achieve improvement in wafer yield, three control strategies are formulated with greedy algorithm, method heuristic and non-linear programming in this wafer-scale. The simulation results show that average wafer yield from genetic algorithm is improved, compared to greedy algorithm. Moreover, average wafer yield from non-linear programming is also improved, compared to greedy algorithm. At die-scale, a comprehensive control algorithm is developed based on the MRR equations with interface pressure as a control parameter. The interface pressure is varied spatially and/or temporally across the die. In this concept, three control strategies are developed and studied. The strategies are included spatial pressure control, spatial and temporal pressure control, and look-ahead scheduled pressure control. The simulation results of these three strategies show improvement in the upper surface uniformity; however, look-ahead scheduled pressure control seems to be the promising algorithm.
Download or read book Advances in Chemical Mechanical Polishing Volume 816 written by Materials Research Society. Meeting and published by . This book was released on 2004-09 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book, first published in 2004, presents advances in fundamental understanding, development, and applications of chemical-mechanical polishing (CMP).
Download or read book Modeling of Chemical Mechanical Polishing at Multiple Scales written by Guanghui Fu and published by . This book was released on 2002 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical Mechanical Polishing (CMP) has grown rapidly during the past decade as part of mainstream processing method in submicron integrated circuit manufacturing because of its global or near-global planarization ability. However, CMP process is influenced by many factors and is poorly understood. It makes process control and optimization very difficult. This study focuses on the modeling and simulation to facilitate better understanding and better control of the CMP process. The thesis outlines the modeling of CMP process in three scales: particle scale for material removal mechanism, wafer scale for within wafer nonuniformity issues and feature scale for dishing and erosion in metal CMP. At the particle scale, material removal mechanism is assumed to be due to local plastic deformation of wafer surface material. A mechanistic material removal model is derived that delineates the influence of abrasive (shape, size and concentration), pad (rigidity) and process parameters (pressure and relative velocity) on the material removal rate (MRR). Wafer scale model is based on the solution of indentation of elastic half space by a rigid frictionless polynomial punch. The load-displacement relationship is also derived and the conditions for unbonded or bonded contact are obtained from the boundary condition at punch edge. The corresponding viscoelastic solution is obtained through Laplace transform and elastic-viscoelastic analogy. The elastic solution is used to explain the edge effect. Viscoelastic solution is used to explain MRR decay for unconditioned pad. The relationships among wafer-pad interface pressure, wafer shape and wafer loading condition are also investigated. Feature scale model is based on Preston's relationship for material removal and constant downforce. It shows dishing is governed by polishing conditions (overpolishing, pressure, velocity), slurry (selectivity), pad characteristics (pad stiffness and bending ability), as well as wafer surface feature topography (pattern density, linewidth and pitch). This model is also valid for step height reduction when the same surface material is polished. Due to process complexity and coupling of various parameters, more fundamental research needs to be carried out and carefully designed experiments need to be done to verify the models. Recommendations for future research work is presented at the end.
Download or read book Chemical Mechanical Polishing Fundamentals and Challenges Volume 566 written by S. V. Babu and published by . This book was released on 2000-02-10 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book Chemical mechanical Polishing written by and published by . This book was released on 2001 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Great Saturday written by and published by . This book was released on 1960 with total page 52 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the First International Symposium on Chemical Mechanical Planarization written by Iqbal Ali and published by The Electrochemical Society. This book was released on 1997 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Investigation of Mechanical Aspects of Chemical Mechanical Polishing written by Andrew Kunung Chang and published by . This book was released on 2002 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Simulation of Wafer Scale Variations in Chemical Mechanical Polishing written by Sutee Eamkajornsiri and published by . This book was released on 2000 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect written by Jie Cheng and published by Springer. This book was released on 2017-09-06 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.
Download or read book Chemical Mechanical Polishing 2001 Advances and Future Challenges Volume 671 written by Materials Research Society. Meeting and published by . This book was released on 2001-12-14 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This volume was first published in 2001.
Download or read book International Journal of Manufacturing Technology and Management written by and published by . This book was released on 2005 with total page 662 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Statistical Case Studies for Industrial Process Improvement written by Veronica Czitrom and published by SIAM. This book was released on 1997-01-01 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: A selection of studies by professionals in the semiconductor industry illustrating the use of statistical methods to improve manufacturing processes.
Download or read book Advances in Chemical Mechanical Planarization CMP written by Babu Suryadevara and published by Woodhead Publishing. This book was released on 2021-09-10 with total page 650 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Chemical Mechanical Planarization (CMP), Second Edition provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The second edition includes the recent advances of CMP and its emerging materials, methods, and applications, including coverage of post-CMP cleaning challenges and tribology of CMP. This important book offers a systematic review of fundamentals and advances in the area. Part one covers CMP of dielectric and metal films, with chapters focusing on the use of current and emerging techniques and processes and on CMP of various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. New content addressed includes CMP challenges with tungsten, cobalt, and ruthenium as interconnect and barrier films, consumables for ultralow topography and CMP for memory devices. Part two addresses consumables and process control for improved CMP and includes chapters on CMP pads, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes and approaches for defection characterization, mitigation, and reduction. Advances in Chemical Mechanical Planarization (CMP), Second Edition is an invaluable resource and key reference for materials scientists and engineers in academia and R&D. Reviews the most relevant techniques and processes for CMP of dielectric and metal films Includes chapters devoted to CMP for current and emerging materials Addresses consumables and process control for improved CMP, including post-CMP
Download or read book Investigating Fluid Behavior Beneath a Wafer During Chemical Mechanical Polishing Processes written by Jonathan Robert Coppeta and published by . This book was released on 1999 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt: A polishing platform was developed to study slurry behavior beneath a wafer during chemical mechanical polishing processes. This polishing platform was approximately a 1:2 scale model of an industrial polisher and was meant to emulate the polishing characteristic of a full-scale polisher. Polishing parameters were scaled appropriately to insure the scale model's accuracy. Parameters that were investigated using this model included slurry flow rate, platen and wafer rotation rates, wafer down force, different pad types and pad topographies, and different in situ conditioning recipes. The slurry behavior was characterized using an optical technique known as dual emission laser induced fluorescence (DELIF). By tagging slurry with fluorescent dyes, quantitative in situ measurements of slurry mixing and slurry fluid depth beneath a wafer are possible, The slurry laver beneath the wafer varied from 17 to 35 microns in height depending on the platen speed and wafer pressure. The slurry depth appeared to follow Reynolds' solution of hydrodynamic lubrication over the range of pressures and speeds examined. Friction measurements of the wafer drag on a flat polishing pad revealed that above 100 rpm, the coefficient of friction became independent of down force and platen speeds to within the resolution of the transducer. Below 100 rpm the coefficient of friction demonstrated a complex dependency on platen speed, wafer down force, and slurry flow rate. Polishing, rates of the glass substrates fell within the acceptable industry standard of approximately 1000--2000 angstroms/min. The polishing rates increased towards the edge of the wafer as compared to the center of the wafer. The effects of five major CMP parameters were investigated to determine how they affect slurry transport beneath the wafer in a designed experiment. These parameters include platen speed, slurry flow rate, wafer down force, pad manufacturer and pad grooving. All of the parameters except wafer down force affected the slurry transport and many of the parameters demonstrated non-linear interactions with other factors. In situ conditioning had a large effect on slurry transport compared with ex situ conditioning.
Download or read book Chemical Mechanical Polishing 2001 Advances and Future Challenges written by Suryadevara V. Babu and published by Cambridge University Press. This book was released on 2014-06-05 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: With copper and barrier-layer integration firmly in place, several other exciting developments are occurring in the practice of chemical-mechanical polishing (CMP), and many advances are described in this book, first published in 2001. Discussions on CMP for shallow-trench isolation, abrasive-free slurries, improvements in pad and tool configurations including fixed abrasive pads, 'engineered' particles, effects of nanotopography, end-point studies, defect characterization and novel post-CMP cleaning methods are highlighted. Considerable progress has also been reported in modeling the complicated interactions that occur between the wafer surface and the pad and the slurry, whether containing abrasives or abrasive-free, and their influence on dishing and erosion and nonuniformity. These studies offer valuable insights for process improvements and yet many challenges remain and will provide a high level of interest for future books. Topics include: recent developments - pads and related issues; CMP abrasives; copper CMP/STI and planarization; STI and planarization - wear-rate models; low-k and integration issues - particle and process effects in CMP and issues in CMP cleaning.
