Download or read book Wideband Watt Level Spatial Power Combined Power Amplifier in SIGe BiCMOS Technology for Efficient Mm Wave Array Transmitters written by Artem Roev and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book mm Wave Silicon Power Amplifiers and Transmitters written by Hossein Hashemi and published by Cambridge University Press. This book was released on 2016-04-04 with total page 471 pages. Available in PDF, EPUB and Kindle. Book excerpt: Build high-performance, spectrally clean, energy-efficient mm-wave power amplifiers and transmitters with this cutting-edge guide to designing, modeling, analysing, implementing and testing new mm-wave systems. Suitable for students, researchers and practicing engineers, this self-contained guide provides in-depth coverage of state-of-the-art semiconductor devices and technologies, linear and nonlinear power amplifier technologies, efficient power combining systems, circuit concepts, system architectures and system-on-a-chip realizations. The world's foremost experts from industry and academia cover all aspects of the design process, from device technologies to system architectures. Accompanied by numerous case studies highlighting practical design techniques, tradeoffs and pitfalls, this is a superb resource for those working with high-frequency systems.

Download or read book Power Combining Techniques for Millimeter wave Silicon Power Amplifiers written by Jefy Alex Jayamon and published by . This book was released on 2017 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging millimeter-wave applications, including high speed wireless communication using 5G standards, favor silicon technologies, both CMOS and SiGe, for transceiver design, due to the high level of integration at reduced cost and availability of high speed transistors. Efficient, linear and reliable high power amplifiers with broad bandwidth are needed at the transmitter front-ends to enable high data rate links at long distances. But the low breakdown voltage of CMOS FETs due to gate length scaling and other transistor non-idealities make the design of high power mm-wave amplifiers in deeply scaled CMOS nodes difficult. Circuit techniques like FET stacking provide a compact and efficient way of implementing high power mm-wave amplifiers reliably. Other power combining techniques such as on-chip and spatial power combining can be used along with FET stacking to achieve even higher output power levels. This thesis investigates the design of high power mm-wave power amplifiers at frequencies from 28 GHz to 94 GHz, using multiple power combining techniques. This work extends the use of FET stacking for high power PA design to 94 GHz. A 3-stack PA designed in 45 nm CMOS SOI with 17 dBm output power and 9% efficiency is presented. Using this PA as front-end, a CMOS PA-antenna array is designed, to additionally provide spatial power combining. The CMOS chip has a 2 x 4 array of pseudo-differential power amplifiers along with the signal distribution networks and pre-drivers. A quartz wafer with a 2 x 4 array of differential microstrip antennas deposited on it is placed on top of the CMOS chip, electromagnetically coupled to the PA outputs on the CMOS chip. The spatially power combined PA-antenna array achieved a measured equivalent isotropic radiated power (EIRP) of 33 dBm and an estimated output power of 24 dBm at 94 GHz. Modulated data measurements at 3 Gbps (375 MS/s, 256 QAM) speed using digital pre-distortion are demonstrated with the PA-antenna array. A novel layout style is introduced for stacked FET design at low mm-wave frequencies. A small multi-finger FET is laid out with fingers connected in series to create the stacked FET. The gate capacitors are realized around the FET with the back-end-of-line metal available in the CMOS process. Multiple multigate cells are interconnected to implement the stacked FET PA. A PA designed in this style in 45 nm CMOS SOI process achieved 24.8 dBm of output power and 29% PAE at 28 GHz with high reliability. This PA is very broadband and linear as shown by the modulated data measurements achieving a data rate of 36 Gbps (6 GS/s, 64 QAM) at 14 dBm with 9.3% PAE, with no digital predistortion. NFETs and PFETs available in nano-scale CMOS processes are compared and it is shown that in deeply scaled processes, PMOS devices are a viable alternative to NFETs due to their cut-off frequencies similar to those of NFETs, and higher breakdown voltages than NFETs. The first exclusively PMOS mm-wave PA design is reported. This 3-stack PA, made in 32 nm CMOS SOI process, achieved a maximum output power of 19.6 dBm and maximum efficiency of 24% at 78 GHz. All the designs reported in this thesis achieved either the highest output power or the highest PAE for a CMOS PA at their respective frequencies.

Download or read book High Efficiency Power Amplifier Design for 28 GHz 5G Transmitters written by Nourhan Elsayed and published by Springer Nature. This book was released on 2022-02-02 with total page 105 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces power amplifier design in 22nm FDSOI CMOS dedicated towards 5G applications at 28 GHz and presents 4 state-of-the-art power amplifier designs. The authors discuss power amplifier performance metrics, design trade-offs, and presents different power amplifier classes utilizing efficiency enhancement techniques at 28 GHz. The book presents the design process from theory, simulation, layout, and finally measurement results.

Download or read book CMOS 60 GHz and E band Power Amplifiers and Transmitters written by Dixian Zhao and published by Springer. This book was released on 2015-06-29 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the development of design techniques and methodologies for 60-GHz and E-band power amplifiers and transmitters at device, circuit and layout levels. The authors show the recent development of millimeter-wave design techniques, especially of power amplifiers and transmitters, and presents novel design concepts, such as “power transistor layout” and “4-way parallel-series power combiner”, that can enhance the output power and efficiency of power amplifiers in a compact silicon area. Five state-of-the-art 60-GHz and E-band designs with measured results are demonstrated to prove the effectiveness of the design concepts and hands-on methodologies presented. This book serves as a valuable reference for circuit designers to develop millimeter-wave building blocks for future 5G applications.

Download or read book RF and mm Wave Power Generation in Silicon written by Hua Wang and published by Academic Press. This book was released on 2015-12-10 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt: RF and mm-Wave Power Generation in Silicon presents the challenges and solutions of designing power amplifiers at RF and mm-Wave frequencies in a silicon-based process technology. It covers practical power amplifier design methodologies, energy- and spectrum-efficient power amplifier design examples in the RF frequency for cellular and wireless connectivity applications, and power amplifier and power generation designs for enabling new communication and sensing applications in the mm-Wave and THz frequencies. With this book you will learn: Power amplifier design fundamentals and methodologies Latest advances in silicon-based RF power amplifier architectures and designs and their integration in wireless communication systems State-of-the-art mm-Wave/THz power amplifier and power generation circuits and systems in silicon Extensive coverage from fundamentals to advanced design topics, focusing on various layers of abstraction: from device modeling and circuit design strategy to advanced digital and mixed-signal architectures for highly efficient and linear power amplifiers New architectures for power amplifiers in the cellar and wireless connectivity covering detailed design methodologies and state-of-the-art performances Detailed design techniques, trade-off analysis and design examples for efficiency enhancement at power back-off and linear amplification for spectrally-efficient non-constant envelope modulations Extensive coverage of mm-Wave power-generation techniques from the early days of the 60 GHz research to current state-of the-art reconfigurable, digital mm-Wave PA architectures Detailed analysis of power generation challenges in the higher mm-Wave and THz frequencies and novel technical solutions for a wide range for potential applications, including ultrafast wireless communication to sensing, imaging and spectroscopy Contributions from the world-class experts from both academia and industry

Download or read book Millimeter Wave Power Amplifiers written by Jaco du Preez and published by Springer. This book was released on 2017-10-05 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a detailed review of millimeter-wave power amplifiers, discussing design issues and performance limitations commonly encountered in light of the latest research. Power amplifiers, which are able to provide high levels of output power and linearity while being easily integrated with surrounding circuitry, are a crucial component in wireless microwave systems. The book is divided into three parts, the first of which introduces readers to mm-wave wireless systems and power amplifiers. In turn, the second focuses on design principles and EDA concepts, while the third discusses future trends in power amplifier research. The book provides essential information on mm-wave power amplifier theory, as well as the implementation options and technologies involved in their effective design, equipping researchers, circuit designers and practicing engineers to design, model, analyze, test and implement high-performance, spectrally clean and energy-efficient mm-wave systems.

Download or read book Design of Fully Integrated 60GHz OFDM Transmitter written by Srdjan Glisic and published by Sudwestdeutscher Verlag Fur Hochschulschriften AG. This book was released on 2011 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a dissertation entitled "Design of Fully Integrated 60 GHz OFDM Transmitter in SiGe BiCMOS Technology." It presents transmitter design for wireless communication in the ISM band at 60 GHz for speeds of several Gbit/s. It is focused on design of transmitter components, which are critical for the performance of the whole analog front-end. Phase-locked loop phase noise optimization is presented. A new optimized recipe for calculating phase-locked loop parameters of a forth order PLL is presented, resulting in the spurious sideband reduction by up to 10 dB. The design of integrated image-rejection filters with low quality factor of the integrated resonators is presented. The challenges related to the design of mm-wave power amplifiers with high P1dB are analyzed and the procedure of the PA design is presented. The fully integrated transmitter was used for data transmission with data rate of 3.6 Gbit/s (with coding 4.8 Gbit/s) over 15 meters. This is the best result in the class of 60 GHz analog front-ends without beamforming.

Download or read book Bandwidth and Efficiency Enhancement in Radio Frequency Power Amplifiers for Wireless Transmitters written by Karun Rawat and published by Springer Nature. This book was released on 2020-03-05 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on broadband power amplifier design for wireless communication. Nonlinear model embedding is described as a powerful tool for designing broadband continuous Class-J and continuous class F power amplifiers. The authors also discuss various techniques for extending bandwidth of load modulation based power amplifiers, such as Doherty power amplifier and Chireix outphasing amplifiers. The book also covers recent trends on digital as well as analog techniques to enhance bandwidth and linearity in wireless transmitters. Presents latest trends in designing broadband power amplifiers; Covers latest techniques for using nonlinear model embedding in designing power amplifiers based on waveform engineering; Describes the latest techniques for extending bandwidth of load modulation based power amplifiers such as Doherty power amplifier and Chireix outphasing amplifiers; Includes coverage of hybrid analog/digital predistortion as wideband solution for wireless transmitters; Discusses recent trends on on-chip power amplifier design with GaN /GaAs MMICs for high frequency applications.

Download or read book A wideband fully integrated SiGe BiCMOS medium power amplifier written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In this paper, a wideband 3.0GHz- 5GHz Medium Power Amplifier has been designed and fabricated using 0.8um SiGe BiCMOS process technology. Passive elements such as parallel-branch spiral inductor, metal-insulator-metal (MIM) capacitor and three types of resistors are all integrated in this process. This Medium PA is a two stage design with all matching components and bias circuits integrated on-chip. A P1dB of 16.5dBm has been measured with a power gain of 8.5dB at 4.2GHz with a total current consumption of 130mA from a 2.5 V supply voltage at 25. The measured 3dB bandwidth is 2.5 GHz, which is a very good result for a fully integrated Medium PA. The fabricated circuit occupies a die area of 1.7mm 0.8mm.

Download or read book A Millimeter wave Power Amplifier Concept in SiGe BiCMOS Technology for Investigating HBT Physical Limitations written by Jonas Wursthorn and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A Multistage Parallel path Power Amplifier in Silicon Germanide Bipolar Technology for Mm wave Wireless Applications written by Tak Shun Dickson Cheung and published by . This book was released on 2007 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wireless transmitters at mm-wave frequencies usually require costly III-V GaAs power amplifiers that must be packaged separately from mainstream silicon CMOS and BiCMOS circuits. This thesis studies the prospect of an integrable 3-stage power amplifier in a 100GHzfMAX 0.2microm SiGe HBT technology to facilitate cost-effective implementations of single-chip transceivers for 21--26GHz wireless applications. The amplifier utilizes an all common-base differential topology to maximize the power gain and extend the VCC supply to BVCEO of the transistors (1.8V). New on-chip components, such as interconnects with floating differential shields, self-shielding transformers and 4-way power combining/dividing baluns provide inter-stage coupling and single-ended interfaces at the input and output. On-chip ground isolation, low-inductance base interconnects and base ballast resistors are employed to ensure electrical and thermal stability. The current ratings of the on-chip passive components are designed to withstand the expected DC currents up to 110°C. The 2.45x2.45mm2 MMIC was mounted as a flip-chip and tested without a heatsink. It delivers 23dBm, 19.75% PAE at 22GHz, and 2ldBm, 13% PAE at 24GHz. The power gain is 19dB at a small-signal level and over 15dB at the maximum output power.

Download or read book Advanced Architectures for Efficient Mm Wave CMOS Wireless Transmitters written by JIASHU CHEN and published by . This book was released on 2013 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt: With fast growing consumer demand for high speed mobile data capacity, wireless spectrum has become increasingly precious. This drives the evolution of the personal wireless communication, with new standards developed to improve the spectral efficiency. However, the available spectrum below 10GHz is very limited and packing more bits per second into the same bandwidth requires larger energy consumption as well as more stringent radio and MODEM performance. As a result, such an approach is not sustainable for meeting the future demand. A natural path is to move into higher frequency bands which have larger spectrum bandwidth but less commercial usage. Recent years have witnessed vast technology development on V-band (60GHz) Wireless Personal Area Networks (WPAN) and E-band (80GHz) point-to-point cellular backhauls. Meanwhile, the advancement of low-cost CMOS technologies enables researchers to significantly improve the integration level of high speed mm-wave radios with traditional analog and digital circuitry. However, current mm-wave radio transmitters suffer from short communication distance and low energy efficiency. This is mainly caused by the reduced performance of the CMOS transmitters employing traditional Power Amplifiers (PAs) that suffer from low transistor breakdown voltage, low power gain and poor back-off characteristics. This dissertation investigates the challenges of designing efficient mm-wave transmitters for both long range and short range applications, and proposes concepts and techniques that can potentially break the barriers imposed by the low cost digital CMOS process. The scope of investigation and proposal extends from the architecture level down to the transistor level. Specifically, on-chip and spatial power combining techniques are analyzed and implemented to achieve larger transmitter Equivalent Isotropically Radiated Power (EIRP). To enhance the average efficiency for modulated signals with high Peak-to-Average-Power-Ratio (PAPR), a direct digital-to-RF conversion architecture is proposed and implemented, enabling dynamic DC power scaling. Finally, a Quadrature Spatial Combining concept is introduced to eliminate the tradeoff between low insertion loss and high isolation present in a traditional Cartesian architecture with on-chip signal combiners. Prototype chips are fabricated and tested in 65nm CMOS technology to verify the proposed architectures and techniques.

Download or read book Linear CMOS RF Power Amplifiers for Wireless Applications written by Paulo Augusto Dal Fabbro and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in electronics have pushed mankind to create devices, ranging from - credible gadgets to medical equipment to spacecraft instruments. More than that, modern society is getting used to—if not dependent on—the comfort, solutions, and astonishing amount of information brought by these devices. One ?eld that has continuously bene?tted from those advances is the radio frequency integrated c- cuit (RFIC) design, which in its turn has promoted countless bene?ts to the mankind as a payback. Wireless communications is one prominent example of what the - vances in electronics have enabled and their consequences to our daily life. How could anyone back in the eighties think of the possibilities opened by the wireless local area networks (WLANs) that can be found today in a host of places, such as public libraries, coffee shops, trains, to name just a few? How can a youngster, who lives this true WLAN experience nowadays, imagine a world without it? This book dealswith the design oflinearCMOS RF PowerAmpli?ers(PAs). The RF PA is a very important part of the RF transceiver, the device that enables wireless communications. Two important aspects that are key to keep the advances in RF PA design at an accelerate pace are treated: ef?ciency enhancement and frequen- tunable capability. For this purpose, the design of two different integrated circuits realizedina0. 11μmtechnologyispresented,eachoneaddressingadifferentaspect. With respect to ef?ciency enhancement, the design of a dynamic supply RF power ampli?er is treated, making up the material of Chaps. 2 to 4.

Download or read book High Efficiency Power Amplifier Design Techniques for Advanced Transmitters written by Bagher Rabet and published by . This book was released on 2019 with total page 109 pages. Available in PDF, EPUB and Kindle. Book excerpt: The emerging 5G and mm-wave high data rate wireless communication applications have exacerbated the challenges of the PA design, especially for the commercial Si-based ICs. The complex wideband OFDM signals in these applications, with high PAPR, demand stringent PA requirements of linearity, and efficiency at both peak and backoff power levels. This dissertation addresses the design challenges for sub-6GHz and 28GHz CMOS and SiGe integrated PAs, by introducing novel techniques and presenting them with proper mathematical framework and modeling, alongside the hardware implementations that achieve record results. Active load modulation, employed in Doherty and Chireix outphasing architectures, is one of the well-known techniques to improve the backoff efficiency of PAs. In theory, outphasing offers a better efficiency profile than Doherty, but it was traditionally believed that it works well only with voltage-mode PAs. However, recently it has been shown that for outphasing with current-mode PAs, if the input drive power reduced at backoff, good results can be achieved. In this dissertation a detailed mathematical analysis for current-mode outphasing is presented, and then the implemented 5.5GHz 45nm CMOS-SOI dual-input outphasing PA is discussed that achieves record average PAE of 30.9% while generating a 40MHz 64-QAM OFDM modulated signal with 7.9dB PAPR and 14dBm average output power. At 28GHz band, the loss due to the integrated passive elements is one of the bottlenecks to achieve high efficiency. To address this issue a novel Chiriex combiner based on a "triaxial balun" is presented. An equivalent circuit model of the balun is introduced for the first time to make the analysis and design more straight forward. The implemented chip in 130nm SiGe BiCMOS process shows balun loss of only 0.5dB at 28GHz, and the dual-input outphasing PA achieves a record average PAE of 25.3% for an 8.1dB PAPR, 80MHz 64-QAM OFDM signal with average output power of 14.3dBm. In phased array systems, it is not practical to employ individual digital predistortion (DPD) for each PA unit, and they must be inherently linear. A novel architecture named Single Input Linear Chireix (SILC) PA is introduced that not only has a high backoff efficiency but also has a linear response achieved by correcting the transistor related distortions using the systematic AM-AM and AM-PM variations. The implemented PA in 130nm SiGe process demonstrates 19dBm saturated output power with 34.4% peak PAE and 6-dB backoff PAE of >23% at 27.5GHz. The modulated signal performance using a 100MHz 64-QAM OFDM signal shows average output power of 11.9dBm with PAE >20%, EVM

Download or read book High Efficiency RF and Microwave Solid State Power Amplifiers written by Paolo Colantonio and published by John Wiley & Sons. This book was released on 2009-07-08 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: Do you want to know how to design high efficiency RF and microwave solid state power amplifiers? Read this book to learn the main concepts that are fundamental for optimum amplifier design. Practical design techniques are set out, stating the pros and cons for each method presented in this text. In addition to novel theoretical discussion and workable guidelines, you will find helpful running examples and case studies that demonstrate the key issues involved in power amplifier (PA) design flow. Highlights include: Clarification of topics which are often misunderstood and misused, such as bias classes and PA nomenclatures. The consideration of both hybrid and monolithic microwave integrated circuits (MMICs). Discussions of switch-mode and current-mode PA design approaches and an explanation of the differences. Coverage of the linearity issue in PA design at circuit level, with advice on low distortion power stages. Analysis of the hot topic of Doherty amplifier design, plus a description of advanced techniques based on multi-way and multi-stage architecture solutions. High Efficiency RF and Microwave Solid State Power Amplifiers is: an ideal tutorial for MSc and postgraduate students taking courses in microwave electronics and solid state circuit/device design; a useful reference text for practising electronic engineers and researchers in the field of PA design and microwave and RF engineering. With its unique unified vision of solid state amplifiers, you won’t find a more comprehensive publication on the topic.

Download or read book High Efficiency Load Modulation Power Amplifiers for Wireless Communications written by Zhancang Wang and published by Artech House. This book was released on 2017-06-30 with total page 389 pages. Available in PDF, EPUB and Kindle. Book excerpt: This cutting-edge resource presents a complete and systematic overview of the practical design considerations of radio frequency (RF) high efficiency load modulation power amplifiers (PA) for modern wireless communications for 4G and beyond. It provides comprehensive insight into all aspects of load modulation PA design and optimization not only covering design approaches specifically for passive and active load modulation operation but also hybrid with dynamic supply modulation and digital signal processing algorithms required for performance enhancement. Passive load impedance tuner design, dynamic load modulation PA, active load modulation PA and Doherty PA design for efficiently enhancement are explained. Readers find practical guidance into load modulation PA design for bandwidth extension, including video bandwidth enhancement techniques, broadband dynamic load amplifiers, topology selection, design procedures, and network output. This book presents the evolution and integration of classical load modulation PA topologies in order to meet new challenges in the field.