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Book Vapor Phase Epitaxy of Gallium Arsenide

Download or read book Vapor Phase Epitaxy of Gallium Arsenide written by Arrigo Addamiano and published by . This book was released on 1973 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs epitaxial layers of good semiconductor quality (comparable to bulk GaAs) have been prepared by the arsine method. The preparative technique and improvements are described. Overall, the arsine system has proved not only reliable but simple as well. The growth rates are reasonably high for practical device fabrication. (Author).

Book Growth of Epitaxial Gallium Arsenide by the Vapor Phase Process

Download or read book Growth of Epitaxial Gallium Arsenide by the Vapor Phase Process written by James E. Stangel (CAPT, USAF.) and published by . This book was released on 1972 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Metal Organic Vapor Phase Epitaxy Growth Mechanisms of Gallium Antimonide and Compositional Grading in Pseudomorphic Gallium Arsenide Antimonide Films

Download or read book Metal Organic Vapor Phase Epitaxy Growth Mechanisms of Gallium Antimonide and Compositional Grading in Pseudomorphic Gallium Arsenide Antimonide Films written by Brian Edmund Hawkins and published by . This book was released on 2004 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Vapor Phase Epitaxial Growth of Gallium Arsenide Indium Phosphide and Indium Gallium Arsenide by the Hydride Technique

Download or read book Vapor Phase Epitaxial Growth of Gallium Arsenide Indium Phosphide and Indium Gallium Arsenide by the Hydride Technique written by Lawrence Martin Zinkiewicz and published by . This book was released on 1981 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Metalorganic Vapor Phase Epitaxy MOVPE

Download or read book Metalorganic Vapor Phase Epitaxy MOVPE written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Book Incorporation and Diffusion of Zinc and Group III Elements in Gallium Arsenide Using Organometallic Vapor Phase Epitaxy and Open Tube Diffusion

Download or read book Incorporation and Diffusion of Zinc and Group III Elements in Gallium Arsenide Using Organometallic Vapor Phase Epitaxy and Open Tube Diffusion written by Chung-Yi Chen and published by . This book was released on 1995 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book The Growth and Characterization of Gallium arsenide Aluminum gallium arsenide and Their Heterostructures by Organometallic Vapor Phase Epitaxy

Download or read book The Growth and Characterization of Gallium arsenide Aluminum gallium arsenide and Their Heterostructures by Organometallic Vapor Phase Epitaxy written by James Richard Shealy and published by . This book was released on 1983 with total page 251 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Characterization of Gallium Arsenide and Indium Gallium Arsenide on Gallium Arsenide 001 Films Grown by Metalorganic Vapor phase Epitaxy

Download or read book Characterization of Gallium Arsenide and Indium Gallium Arsenide on Gallium Arsenide 001 Films Grown by Metalorganic Vapor phase Epitaxy written by Byung-kwon Han and published by . This book was released on 1997 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Studies of the Organometallic Vapour Phase Epitaxial Growth of Gallium Arsenide

Download or read book Studies of the Organometallic Vapour Phase Epitaxial Growth of Gallium Arsenide written by R. D. Hoare and published by . This book was released on 1990 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Growth of Epitaxial Gallium Arsenide by the Vapor Phase Process

Download or read book Growth of Epitaxial Gallium Arsenide by the Vapor Phase Process written by James E. Stangel and published by . This book was released on 1972 with total page 113 pages. Available in PDF, EPUB and Kindle. Book excerpt: The vapor phase process was used to grow n-type epitaxial gallium arsenide. The system was an open flow type, using the reagents gallium, arsenic trichloride, and hydrogen. The importance of initiating growth after saturating the gallium source with arsenic was demonstrated. The growth rate was shown to be highly dependent on both substrate temperature and total flow rate. It was shown that a higher arsenic trichloride concentration resulted in a lower net donor concentration within the epitaxial layer. (Author).

Book Organometallic Vapor Phase Epitaxy

Download or read book Organometallic Vapor Phase Epitaxy written by Gerald B. Stringfellow and published by Elsevier. This book was released on 2012-12-02 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the special structures required for device applications. In addition, a comprehensive summary detailing the OMVPE results observed to date in a wide range of III-V and II-VI semiconductors is provided. This includes a comparison of results obtained through the use of other epitaxial techniques such as molecular beam epitaxy (MBE), liquid-phase epitaxy (LPE), and vapor phase epitaxy using halide transport.