Download or read book Ultra shallow Junction Fabrication Using Plasma Immersion Ion Implantation and Epitaxial CoSi2 as a Dopant Source written by Erin Catherine Jones and published by . This book was released on 1996 with total page 428 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2692 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ultra Shallow Junction Using Diffusion from CoSi2 fabrication Analysis and Modelling written by H. Jiang and published by . This book was released on 1989 with total page 25 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Surface Passivation and Junction Engineering in Silicon written by Gaurav Thareja and published by Stanford University. This book was released on 2011 with total page 99 pages. Available in PDF, EPUB and Kindle. Book excerpt: The planar silicon MOSFET is facing diminishing performance returns in improvement from device geometry scaling. Two alternative devices are being explored as possible solutions to this problem. The first contender is a multi-gate device (FINFET or surround gate) and the other is a MOSFET with high mobility channel material such as germanium, III-V or carbon. Ge has emerged as an important materials platform during recent years. With its high carrier mobility and the ability to detect and emit photons at telecommunications wavelengths, Ge is an attractive candidate for applications in both high performance electronics and optoelectronics. Moreover due to its compatibility with conventional CMOS fabrication, it can be processed using the standard manufacturing techniques that are currently used for silicon. However Ge does present a number of unique challenges that must be overcome, including issues of surface passivation, low n-type dopant solubility, and high dopant diffusivity. In this work, the unique properties of surface passivation enabled by radical oxidation are discussed. Some of the highlights are low temperature processing, substrate orientation independent growth rate of dielectric and low interface density. Subsequently, this radical oxidation is applied to 3D vertical gate all around (GAA) silicon MOSFET devices. Higher drive current, lower gate leakage and higher gate dielectric breakdown voltage are demonstrated for GAA devices using radical oxidation in comparison to thermal oxidation In the second part, radical oxidation is investigated for GeO2 growth as an interfacial layer in high-k / Ge gate stack. Using MOSCAP and n-MOSFET devices on Ge, low interface state density combined with drive current and electron mobility enhancement is demonstrated for Ge devices. In the third part, the source/drain junctions for Ge are studied. Ultra-shallow junctions using plasma immersion ion implantation are demonstrated. High n-type dopant activation in Ge using laser annealing is realized along with high performance diodes, significant reduction of contact resistance and integration in a MOSFET process flow.
Download or read book Ultra shallow Junction Fabrication Using Recoil Implantation written by Henley Liu and published by . This book was released on 1999 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Science Abstracts written by and published by . This book was released on 1993 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Epitaxial Silicon Technology written by B Baliga and published by Elsevier. This book was released on 2012-12-02 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial Silicon Technology is a single-volume, in-depth review of all the silicon epitaxial growth techniques. This technology is being extended to the growth of epitaxial layers on insulating substrates by means of a variety of lateral seeding approaches. This book is divided into five chapters, and the opening chapter describes the growth of silicon layers by vapor-phase epitaxy, considering both atmospheric and low-pressure growth. The second chapter discusses molecular-beam epitaxial growth of silicon, providing a unique ability to grow very thin layers with precisely controlled doping characteristics. The third chapter introduces the silicon liquid-phase epitaxy, in which the growth of silicon layers arose from a need to decrease the growth temperature and to suppress autodoping. The fourth chapter addresses the growth of silicon on sapphire for improving the radiation hardness of CMOS integrated circuits. The fifth chapter deals with the advances in the application of silicon epitaxial growth. This chapter also discusses the formation of epitaxial layers of silicon on insulators, such as silicon dioxide, which do not provide a natural single crystal surface for growth. Each chapter begins with a discussion on the fundamental transport mechanisms and the kinetics governing the growth rate, followed by a description of the electrical properties that can be achieved in the layers and the restrictions imposed by the growth technique upon the control over its electrical characteristics. Each chapter concludes with a discussion on the applications of the particular growth technique. This reference material will be useful for process technologists and engineers who may need to apply epitaxial growth for device fabrication.
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma Immersion Ion Implantation for VLSI Fabrication written by X. Y. Qian and published by . This book was released on 1990 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication of Photovoltaic Laser Energy Converter by MBE written by Hamilton Lu and published by . This book was released on 1993 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Sub 100 Nm Shallow Junction Fabrication by Broad and Focused Beam Ion Implantation written by Cheng-ming Lin and published by . This book was released on 1989 with total page 153 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Journal of the Physical Society of Japan written by Nihon Butsuri Gakkai and published by . This book was released on 2001 with total page 1022 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma Immersion Ion Implantation Process for Semiconductor Fabrication Linear Reentrant Crossed Field Amplifiers for in Situ Measurements Comparisons with Numerical Simulations and Study of Noise Mechanisms written by and published by . This book was released on 1996 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have performed in situ measurements in two low frequency CFAs to study several basic physics issues which may lead to CFA noise reduction. Our measurements include the local radio-frequency (RF) fields, electron density profiles, electron energy distributions and noise spectrums in both the linear CFA and the reentrant CFA. Comprehensive electron density measurements of the interaction region as well as parametric comparisons such as gain versus sole voltage, beam current and frequency have been used to benchmark two computer simulation codes, MASK and NESSP.
Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Download or read book Fabrication Engineering at the Micro and Nanoscale written by Stephen A. Campbell and published by OUP USA. This book was released on 2008-01-10 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Designed for advanced undergraduate or first-year graduate courses in semiconductor or microelectronic fabrication, the third edition of Fabrication Engineering at the Micro and Nanoscale provides a thorough and accessible introduction to all fields of micro and nano fabrication.
Download or read book Wafer Bonding written by Marin Alexe and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.
Download or read book Nanometer CMOS ICs written by Harry J.M. Veendrick and published by Springer. This book was released on 2017-04-28 with total page 639 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook provides a comprehensive, fully-updated introduction to the essentials of nanometer CMOS integrated circuits. It includes aspects of scaling to even beyond 12nm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design implementation and application. Coverage includes all associated disciplines of nanometer CMOS ICs, including physics, lithography, technology, design, memories, VLSI, power consumption, variability, reliability and signal integrity, testing, yield, failure analysis, packaging, scaling trends and road blocks. The text is based upon in-house Philips, NXP Semiconductors, Applied Materials, ASML, IMEC, ST-Ericsson, TSMC, etc., courseware, which, to date, has been completed by more than 4500 engineers working in a large variety of related disciplines: architecture, design, test, fabrication process, packaging, failure analysis and software.
