Download or read book Tunneling Spectroscopy in P type Silicon written by Donald Edward Cullen and published by . This book was released on 1970 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tunneling in boron doped p-type silicon metal-semiconductor and metal-insulator-semiconductor tunnel junctions has been studied at low temperatures by measuring the derivatives, di/dV and the second derivative of i with respect to V, of the current-voltage characteristics as functions of applied bias voltage V. The junctions were prepared by evaporating metal contacts onto vacuum and air cleaved silicon surfaces. The general features of the tunneling conductance were found to be in qualitative agreement with existing theories of tunneling in semiconductors. Structure in the derivative data resulting from the interaction of tunneling electrons with silicon zone center optical phonons and boron local-mode phonons has been observed. The optical phonon lineshapes in the most heavily doped MIS units are shown to compare well with the theoretical lineshapes in which modifications in the bulk semiconductor states arising from electron-optical phonon interactions in the semiconductor electrode have been included. Anomalous zero-bias conductance minima were observed in the tunneling characteristics of the silicon MS junctions. At least a part of this structure is attributed to intermediate state tunneling whereby electron tunnel from one electrode to the other in two steps via intermediate states localized in the depletion region of the semiconductor. The source of the remaining structure is not known. (Author).
Download or read book TUNNELING SPECTROSCOPY IN DEGENERATE P TYPE SILICON written by D. E. Cullen and published by . This book was released on 1970 with total page 50 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tunneling in boron doped p-type silicon metal-semiconductor (MS) and metal-insulator-semiconductor (MIS) tunnel junctions has been studied at low temperatures by measuring the derivatives, dI/dV and the second derivative of I with respect to V, of the current-voltage characteristics as functions of applied bias voltage V. Junctions were prepared by evaporating metal contacts onto vacuum or air cleaved silicon surfaces. The general features of the tunneling conductance were found to be in qualitative agreement with existing theories of tunneling in semiconductors. Structure in the derivative data resulting from the interaction of tunneling electrons with silicon zone center phonons and boron local mode phonons has been observed. The optical phonon lineshapes in the most heavily doped MIS units are shown to compare well with the theoretical lineshapes in which modifications in the bulk semiconductor states arising from electron-optical phonon interactions in the semiconductor electrode have been included. The origin of the optical phonon and local mode phonon structure in samples of lower doping is not fully understood. (Author).
Download or read book Tunneling Spectroscopy written by Paul Hansma and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book has been compiled to give specialists, in areas that could be helped by tunneling spectroscopy, a rounded and relatively painless intro duction to the field. Why relatively painless? Because this book is filled with figures-A quick glance through these figures can give one a good idea of the types of systems that can be studied and the quality of results that can be obtained. To date, it has been somewhat difficult to learn about tunneling spectroscopy, as papers in this field have appeared in a diversity of scientific journals: for example. The Journal of Adhesion, J(}urnal (}f Catalysis, Surface and Interface Analysis, Science, Journal of the American Chemical Society, Physical Review-over 45 different ones in all, plus numerous conference proceedings. This diversity is, however, undoubtedly healthy. It indicates that the findings of tunneling spectroscopy are of interest and potential benefit to a wide audience. This book can help people who have seen a few papers or heard a talk on tunneling spectroscopy and want to learn more about what it can do for their field. Tunneling spectroscopy is presently in a transitional state. Its experi mental methods and theoretical basis have been reasonably well developed. Its continued vitality will depend on the success of its applications. Crucial to that success, as pointed out by Ward Plummer, is the adoption of tunneling spectroscopy by specialists in the areas of application.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 892 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Principles of Electron Tunneling Spectroscopy written by E. L. Wolf and published by Oxford University Press. This book was released on 2012 with total page 617 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electron tunnelling spectroscopy as a research tool has strongly advanced understanding of superconductivity. This book explains the physics and instrumentation behind the advances illustrated in beautiful images of atoms, rings of atoms and exotic states in high temperature superconductors, and summarizes the state of knowledge that has resulted.
Download or read book Silicon Heterostructure Handbook written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 1248 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.
Download or read book Advances in Research and Development written by and published by Academic Press. This book was released on 1997-11-14 with total page 331 pages. Available in PDF, EPUB and Kindle. Book excerpt: Significant progress has occurred during the last few years in device technologies and these are surveyed in this new volume. Included are Si/(Si-Ge) heterojunctions for high-speed integrated circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging, III-V quantum-well detector structures operated in the heterodyne mode for high-data-rate communications, and III-V heterostructures and quantum-wells for infrared emissions.
Download or read book Publications of the National Bureau of Standards Catalog written by United States. National Bureau of Standards and published by . This book was released on 1987 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Publications of the National Institute of Standards and Technology Catalog written by National Institute of Standards and Technology (U.S.) and published by . This book was released on 1988 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Summary of Engineering Research written by and published by . This book was released on 1970 with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Heterojunctions and Metal Semiconductor Junctions written by A.G. Milnes and published by Elsevier. This book was released on 2012-12-02 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heterojunctions and Metal-Semiconductor Junctions discusses semiconductor-semiconductor heterojunctions and metal-semiconductor heterojunctions, which are of significant practical importance today and also of considerable scientific interest, with worthwhile problems still to be explored and understood. Many classes of heterojunctions are believed to have new and valuable applications. Although some aspects of heterojunction behavior remain areas for continued scientific and technological study, the main outlines of the subject are clear. This book comprises nine chapters, and begins with an introduction to semiconductor heterojunctions. Succeeding chapters then discuss semiconductor p-n heterojunction models and diode behavior; heterojunction transistors; isotype (n-n, p-p) heterojunctions; optical properties of heterojunctions and heterojunction lasers; metal-semiconductor barriers; metal-semiconductor junction behavior; high yield photoemissive cathodes; and fabrication of heterojunctions. This book will be of interest to practitioners in the fields of applied physics.
Download or read book Atomic Force Microscopy Scanning Tunneling Microscopy written by M.T. Bray and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 431 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first U. S. Army Natick Research, Development and Engineering Center Atomic Force/Scanning Tunneling Microscopy (AFM/STM) Symposium was held on lune 8-10, 1993 in Natick, Massachusetts. This book represents the compilation of the papers presented at the meeting. The purpose ofthis symposium was to provide a forum where scientists from a number of diverse fields could interact with one another and exchange ideas. The various topics inc1uded application of AFM/STM in material sciences, polymers, physics, biology and biotechnology, along with recent developments inc1uding new probe microscopies and frontiers in this exciting area. The meeting's format was designed to encourage communication between members of the general scientific community and those individuals who are at the cutting edge of AFM, STM and other probe microscopies. It immediately became clear that this conference enabled interdisciplinary interactions among researchers from academia, industry and government, and set the tone for future collaborations. Expert scientists from diverse scientific areas including physics, chemistry, biology, materials science and electronics were invited to participate in the symposium. The agenda of the meeting was divided into three major sessions. In the first session, Biological Nanostructure, topics ranged from AFM ofDNA to STM imagmg ofthe biomoleeule tubulin and bacterialluciferase to the AFM of starch polymer double helices to AFM imaging of food surfaces.
Download or read book Technical Translations written by and published by . This book was released on 1966 with total page 896 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Pandex Current Index to Scientific and Technical Literature written by and published by . This book was released on 1971 with total page 1490 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.
Download or read book Nanomaterial Characterization written by Ratna Tantra and published by John Wiley & Sons. This book was released on 2016-03-24 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanomaterial Characterization Providing various properties of nanomaterials and the various methods available for their characterization Over the course of the last few decades, research activity on nanomaterials has gained considerable press coverage. The use of nanomaterials has meant that consumer products can be made lighter, stronger, esthetically more pleasing, and less expensive. The significant role of nanomaterials in improving the quality of life is clear, resulting in faster computers, cleaner energy production, target-driven pharmaceuticals, and better construction materials. It is not surprising, therefore, that nanomaterial research has really taken off, spanning across different scientific disciplines from material science to nanotoxicology. A critical part of any nanomaterial research, however, is the need to characterize physicochemical properties of the nanomaterials, which is not a trivial matter. Nanomaterial Characterization: An Introduction is dedicated to understanding the key physicochemical properties and their characterization methods. Each chapter begins by giving an overview of the topic before a case study is presented. The purpose of the case study is to demonstrate how the reader may make use of the background information presented to them and show how this can be translated to solve a nanospecific application scenario. Thus, it will be useful for researchers in helping them design experimental investigations. The book begins with a general overview of the subject, thus giving the reader a solid foundation to nanomaterial characterization. Nanomaterial Characterization: An Introduction features: Nanomaterial synthesis and reference nananomaterials Key physicochemical properties and their measurements including particle size distribution by number, solubility, surface area, surface chemistry, mechanical/tribological properties, and dustiness Scanning tunneling microscopy methods operated under extreme conditions Novel strategy for biological characterization of nanomaterial methods Methods to handle and visualize multidimensional nanomaterial characterization data The book is written in such a way that both students and experts in other fields of science will find the information useful, whether they are in academia, industry, or regulation, or those whose analytical background may be limited.There is also an extensive list of references associated with every chapter to encourage further reading.
Download or read book Spintronics Handbook Second Edition Spin Transport and Magnetism written by Evgeny Y. Tsymbal and published by CRC Press. This book was released on 2019-05-20 with total page 530 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes, graphene, and engineered nanostructures. It focuses on seminal pioneering work, together with the latest in cutting-edge advances, notably extended discussion of two-dimensional materials beyond graphene, topological insulators, skyrmions, and molecular spintronics. The main sections cover physical phenomena, spin-dependent tunneling, control of spin and magnetism in semiconductors, and spin-based applications.
