Download or read book Transport Properties of the Two dimensional Electron Gas in GaAs AlGaAs Heterostructures written by Barry Jia-fu Lin and published by . This book was released on 1985 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Physics of the Two Dimensional Electron Gas written by J.T. Devreese and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 1986 Advanced Study Institute on "The Physics of the two-Dimen sional Electron Gas" took place at the Conference Centre liTer Helme", close to Oostende (Belgium), from June 2 till 16, 1986. We were motivated to organize this Advanced Study Institute in view of the recent experimental and theoretical progress in the study of the two-dimensional electron gas. An additional motivation was our own theore tical interest in cyclotron resonance in two-dimensional electron systems at our institute. It is my pleasure to thank several instances and people who made this Advanced Study Institute possible. First of all, the sponsor of the Advanced Study Institute, the NATO Scientific Committee. Furthermore, the co sponsors: Agfa Gevaert, Bell Telephone Mfg. Co. N.V., Burroughs Belgium. Control Data. Digital Equipment Corporation, Esso Belgium. European Research Office (USA). Kredietbank. National Science Foundation (USA). Special thanks are due to the members of the Program Committee and the members of the Organizing Committee. I would also like to thank Mrs. H. Evans for typing assistance.

Download or read book GaAs and Related Materials written by Sadao Adachi and published by World Scientific. This book was released on 1994 with total page 700 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the various material properties of bulk GaAs and related materials, and aspects of the physics of artificial semiconductor microstructures, such as quantum wells and superlattices, made of these materials. A complete set of the material properties are considered in this book. They are structural properties; thermal properties; elastic and lattice vibronic properties; collective effects and some response characteristics; electronic energy-band structure and consequences; optical, elasto-optic, and electro-optic properties; and carrier transport properties. This book attempts to summarize, in graphical and tabular forms, most of the important theoretical and experimental results on these material properties. It contains a large number of references useful for further study. Timely topics are discussed as well. This book will be of interest to graduate students, scientists and engineers working on semiconductors.

Download or read book Electronic Transport Properties in Monolayer Epitaxial Graphene on Sic and Two dimensional Gaas algaas Heterostructures written by 劉玠汶 and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Mesoscopic Electron Transport written by Lydia L. Sohn and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ongoing developments in nanofabrication technology and the availability of novel materials have led to the emergence and evolution of new topics for mesoscopic research, including scanning-tunnelling microscopic studies of few-atom metallic clusters, discrete energy level spectroscopy, the prediction of Kondo-type physics in the transport properties of quantum dots, time dependent effects, and the properties of interacting systems, e.g. of Luttinger liquids. The overall understanding of each of these areas is still incomplete; nevertheless, with the foundations laid by studies in the more traditional systems there is no doubt that these new areas will advance mesoscopic electron transport to a new phenomenological level, both experimentally and theoretically. Mesoscopic Electron Transport highlights selected areas in the field, provides a comprehensive review of such systems, and also serves as an introduction to the new and developing areas of mesoscopic electron transport.

Download or read book Negative Differential Resistance and Instabilities in 2 D Semiconductors written by N. Balkan and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 437 pages. Available in PDF, EPUB and Kindle. Book excerpt: Instabilities associated with hot electrons in semiconductors have been investigated from the beginning of transistor physics in the 194Os. The study of NDR and impact ionization in bulk material led to devices like the Gunn diode and the avalanche-photo-diode. In layered semiconductors domain formation in HEMTs can lead to excess gate leakage and to excess noise. The studies of hot electron transport parallel to the layers in heterostructures, single and multiple, have shown abundant evidence of electrical instability and there has been no shortage of suggestions concerning novel NDR mechanisms, such as real space transfer, scattering induced NDR, inter-sub band transfer, percolation effects etc. Real space transfer has been exploited in negative-resistance PETs (NERFETs) and in the charge-injection transistor (CHINT) and in light emitting logic devices, but far too little is known and understood about other NDR mechanisms with which quantum well material appears to be particularly well-endowed, for these to be similarly exploited. The aim of this book is therefore to collate what is known and what is not known about NDR instabilities, and to identify promising approaches and techniques which will increase our understanding of the origin of these instabilities which have been observed during the last decade of investigations into high-field longitudinal transport in layered semiconductors. The book covers the fundamental properties of hot carrier transport and the associated instabilities and light emission in 2-dimensional semiconductors dealing with both theory and experiment.

Download or read book High Magnetic Fields in Semiconductor Physics III written by Gottfried Landwehr and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 699 pages. Available in PDF, EPUB and Kindle. Book excerpt: High magnetic fields have, for a long time, been an important tool in the investigation of the electronic structure of semiconductors. In recent yearsstudies of heterostructures and superlattices have predominated, and this emphasis is reflected in these proceedings. The contributions concentrate on experiments using transport and optical methods, but recent theoretical developments are also covered. Special attention is paid to the quantum Hall effect, including the problem of edge currents, the influence of contacts, and Wigner condensation in the fractional quantum Hall effect regime. The 27 invited contributions by renowned expertsprovide an excellent survey of the field that is complemented by numerous contributed papers.

Download or read book Electrical Measurement of Spin dependent Resistivity in GaAs AlGaAs Two dimensional Electron Gas written by and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The electrical transport in the semiconductor two-dimensional electron gases (2DEGs) in the presence of magnetic fields have been the subject of extensive experimental and theoretical studies. Whereas the experiments generally focus on the total magnetotransport of the spin-up and spin-down electrons, the problem of how individual spin components contribute to the sum has been mostly remained untouched. Due to the Zeeman splitting of the Fermi velocities, spin-up and spin-down electrons face different resistivities against their flow. In this thesis, this problem is addressed based on electrical generation and detection of nonequilibrium spin polarization in a narrow conducting channel of 2DEG in a GaAs/AlGaAs heterostructure. It makes use of narrow quasi-one-dimensional constrictions, known as quantum point contacts (QPCs), at a high magnetic field as the injector and detector of the spin polarization. We also simulate the problem based on an one-dimensional spin diffusion model and it turns out that it numerically agrees with the measurements using an electron spin susceptibility which is enhanced compared to that of bare GaAs. Such enhancements are generally linked with the electron-electron interactions which become important for electrons in confined geometries. The first section reviews the general characteristic properties of 2DEGs in GaAs/AlGaAs semiconductor heterostructures, gate-defined structures and quantized electrical transport through QPCs. The second chapter reviews the main results of electronic transport measurements on 2DEGs in the presence of in-plane magnetic fields, and the third chapter includes our spin polarization measurement results in a narrow channel of 2DEG and how they help to account for the effect of spin orientation on the electrical resistivity.

Download or read book Two Dimensional Systems Physics and New Devices written by Günther Bauer and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 335 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the series of International Winter Schools on New Developments in Solid State Physics, the fourth one was devoted to the subject: "Two Dimensional Systems: Physics and Devices". For the second time the pro ceedings of one of these Winter Schools appear as a volume in the Springer Series in Solid-State Sciences (the earlier proceedings were published as Vol. 53). The school was held in the castle of MauterndorfjSalzburg (Austria) February 24-28, 1986. These proceedings contain contributions ba:sed on the thirty invited lectures. The school was attended by 179 registered participants (40% students), who came from western European countries, the United States of America, Japan, the People's Republic of China and Poland. As far as the subjects are conterned, several papers deal with the growth and characterization of heterostructures. Dynamical RHEED tech niques are described as a tool for in situ studies of MBE growth mech anisms. Various growth techniques, including MBE, MOMBE, MOCVD and modifications of these, are discussed. The limiting fa.ctors for the carrier mobilities and the inftuence of the spacer thickness in single het erostructures of GaAs/GaAIAs seem to be understood and are no longer a matter of controversy. In addition, the growth of two fascinating systems, Si/SiGe and Hg _ Cd Te/CdTe, is discussed in detail

Download or read book Theory of Transport Properties of Semiconductor Nanostructures written by Eckehard Schöll and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent advances in the fabrication of semiconductors have created almost un limited possibilities to design structures on a nanometre scale with extraordinary electronic and optoelectronic properties. The theoretical understanding of elec trical transport in such nanostructures is of utmost importance for future device applications. This represents a challenging issue of today's basic research since it requires advanced theoretical techniques to cope with the quantum limit of charge transport, ultrafast carrier dynamics and strongly nonlinear high-field ef fects. This book, which appears in the electronic materials series, presents an over view of the theoretical background and recent developments in the theory of electrical transport in semiconductor nanostructures. It contains 11 chapters which are written by experts in their fields. Starting with a tutorial introduction to the subject in Chapter 1, it proceeds to present different approaches to transport theory. The semiclassical Boltzmann transport equation is in the centre of the next three chapters. Hydrodynamic moment equations (Chapter 2), Monte Carlo techniques (Chapter 3) and the cellular au tomaton approach (Chapter 4) are introduced and illustrated with applications to nanometre structures and device simulation. A full quantum-transport theory covering the Kubo formalism and nonequilibrium Green's functions (Chapter 5) as well as the density matrix theory (Chapter 6) is then presented.

Download or read book Emergent Transport Properties of Magnetic Topological Insulator Heterostructures written by Kenji Yasuda and published by Springer Nature. This book was released on 2020-09-07 with total page 109 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reveals unique transport phenomena and functionalities in topological insulators coupled with magnetism and superconductivity. Topological insulators are a recently discovered class of materials that possess a spin-momentum-locked surface state. Their exotic spin texture makes them an exciting platform for investigating emergent phenomena, especially when coupled with magnetism or superconductivity. Focusing on the strong correlation between electricity and magnetism in magnetic topological insulators, the author presents original findings on current-direction-dependent nonreciprocal resistance, current-induced magnetization reversal and chiral edge conduction at the domain wall. In addition, he demonstrates how the coupling between superconductivity and topological surface state leads to substantial nonreciprocal resistance. The author also elucidates the origins of these phenomena and deepens readers’ understanding of the topologically nontrivial electronic state. The book includes several works which are published in top journals and were selected for the President’s Award by the University of Tokyo and for the Ikushi Prize, awarded to distinguished Ph.D. students in Japan.

Download or read book Electronic Structure of Semiconductor Heterojunctions written by Giorgio Margaritondo and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: E se non che di cid son vere prove A nd were it not for the true evidence Per piti e piti autori, che sa, ra. nno Of many authors who will be Per i miei versi nominati altrove, Mentioned elsewhere in my rhyme Non presterei alla penna 10. mana I would not lend my hand to the pen Per nota1' cid ch'io vidi, can temenza And describe my observations, for fear ehe non fosse do. altri casso e van 0; That they would be rejected and in vane; Mala lor chiara. e vera. esperienza But these authors' clear and true experience Mi assicura. nel dir, come persone Encourages me to report, since they Degne di fede ad ogni gra. n sentenza. Should always be trusted for their word. [From" Dittamondo", by Fazio degli UbertiJ Heterojunction interfaces, the interfaces between different semiconducting materi als, have been extensively explored for over a quarter of a century. The justifica tion for this effort is clear - these interfaces could become the building blocks of lllany novel solid-state devices. Other interfaces involving semiconductors are al ready widely used in technology, These are, for example, metal-semiconductor and insulator-semiconductor junctions and hOll1ojunctions. In comparison, the present applications of heterojunction int. erfaces are limited, but they could potentially becOlne lnuch lllore ext. ensive in the neal' future. The path towards the widespread use of heterojunctions is obstructed by several obstacles

Download or read book Quantum Transport Calculations for Nanosystems written by Kenji Hirose and published by CRC Press. This book was released on 2014-04-11 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt: As electric devices become smaller and smaller, transport simulations based on the quantum mechanics become more and more important. There are currently numerous textbooks on the basic concepts of quantum transport, but few present calculation methods in detail. This book provides various quantum transport simulation methods and shows applications

Download or read book Interfaces Quantum Wells and Superlattices written by C. Richard Leavens and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: The NATO Advanced Study Institute on "Interfaces, Quantum Wells and Superlattices" was held from August 16th to 29th, 1987, in Banff, Alberta, Canada. This volume contains most of the lectures that were given at the Institute. A few of the lectures had already been presented at an earlier meeting and appear instead in the proceedings of the NATO Advanced Study Institute on "Physics and Applications of Quantum Wells and Super lattices" held in Erice from April 21st to May 1st earlier in the year and published by Plenum Press. The study of semiconductor interfaces, quantum wells and super lattices has come to represent a substantial proportion of all work in condensed matter physics. In a sense the growth of interest in this area, which began to accelerate about 10 years ago and seems to be continuing, has been driven by technological developments. While the older generation of semiconductor devices was based on adjacent semiconductors with different properties (e. g. different doping levels) separated by interfaces, modern semiconductor devices tend to be based more and more on properties of the interfaces themselves. This has led, as an example, to the field of band-structure engineering. Improved understanding of the fundamental physics of these systems has aided technological developments and, in turn, technological developments have made available systems which exhibit novel and fascinating phYSical properties, such as the integer and fractional quantum Hall effects.

Download or read book Silicon Germanium SiGe Nanostructures written by Y. Shiraki and published by Elsevier. This book was released on 2011-02-26 with total page 649 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices. With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. Reviews the materials science of nanostructures and their properties and applications in different electronic devices Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition

Download or read book Compound Semiconductors 1994 Proceedings of the Twenty First INT Symposium on Compound Semiconductors held in San Diego California 18 22 September 1994 written by Herb Goronkin and published by CRC Press. This book was released on 1995-01-01 with total page 946 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound Semiconductors 1994 provides a comprehensive overview of research and applications of gallium arsenide, indium phosphide, silicon carbide, and other compound semiconducting materials. Contributed by leading experts, the book discusses growth, characterization, processing techniques, device applications, high-power, high-temperature semiconductor devices, visible emitters and optoelectronic integrated circuits (OEICs), heterojunction transistors, nanoelectronics, and nanophotonics, and simulation and modeling. The book is an essential reference for researchers working on the fabrication of semiconductors, characterization of materials, and their applications for devices, such as lasers, photodiodes, sensors, and transistors, particularly in the high-speed telecommunications industries.

Download or read book Nanostructures and Quantum Effects written by H. Sakaki and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanostructures and Quantum Effects documents the most recent developments in the field of quantum effects in semiconductor nanostructures such as quantum wires and boxes. Interrelated topics such as quantum interference, low-dimensional electron transport, single-electron and microcavity effects, electron holography, and quantum measurements together with the most recent progress in epitaxial growth of nanostructures and the manipulation of atoms using STM-related approaches are covered.