Download or read book Transport of Information Carriers in Semiconductors and Nanodevices written by El-Saba, Muhammad and published by IGI Global. This book was released on 2017-03-31 with total page 690 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rapid developments in technology have led to enhanced electronic systems and applications. When utilized correctly, these can have significant impacts on communication and computer systems. Transport of Information-Carriers in Semiconductors and Nanodevices is an innovative source of academic material on transport modelling in semiconductor material and nanoscale devices. Including a range of perspectives on relevant topics such as charge carriers, semiclassical transport theory, and organic semiconductors, this is an ideal publication for engineers, researchers, academics, professionals, and practitioners interested in emerging developments on transport equations that govern information carriers.
Download or read book Introductory Quantum Mechanics for Applied Nanotechnology written by Dae Mann Kim and published by John Wiley & Sons. This book was released on 2016-05-04 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: This introductory textbook covers fundamental quantum mechanics from an application perspective, considering optoelectronic devices, biological sensors and molecular imagers as well as solar cells and field effect transistors. The book provides a brief review of classical and statistical mechanics and electromagnetism, and then turns to the quantum treatment of atoms, molecules, and chemical bonds. Aiming at senior undergraduate and graduate students in nanotechnology related areas like physics, materials science, and engineering, the book could be used at schools that offer interdisciplinary but focused training for future workers in the semiconductor industry and for the increasing number of related nanotechnology firms, and even practicing people could use it when they need to learn related concepts. The author is Professor Dae Mann Kim from the Korea Institute for Advanced Study who has been teaching Quantum Mechanics to engineering, material science and physics students for over 25 years in USA and Asia.
Download or read book Nonequilibrium Carrier Dynamics in Semiconductors written by Marco Saraniti and published by Springer. This book was released on 2009-09-02 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Nonequilibrium Carrier Dynamics in Semiconductors" is a well-established, specialist conference, held every two years, covering a range of topics of current interest to R&D in semiconductor physics/materials, optoelectronics, nanotechnology, quantum information processing. Papers accepted for publication are selected and peer-reviewed by members of the Program Committee during the conference to ensure both rapid and high-quality processing.
Download or read book Fundamentals of Carrier Transport written by Mark Lundstrom and published by Cambridge University Press. This book was released on 2009-07-02 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of Carrier Transport explores the behavior of charged carriers in semiconductors and semiconductor devices for readers without an extensive background in quantum mechanics and solid-state physics. This second edition contains many new and updated sections, including a completely new chapter on transport in ultrasmall devices and coverage of "full band" transport. Lundstrom also covers both low- and high-field transport, scattering, transport in devices, and transport in mesoscopic systems. He explains in detail the use of Monte Carlo simulation methods and provides many homework exercises along with a variety of worked examples. What makes this book unique is its broad theoretical treatment of transport for advanced students and researchers engaged in experimental semiconductor device research and development.
Download or read book Modelling of Interface Carrier Transport for Device Simulation written by Dietmar Schroeder and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains a comprehensive review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. It combines a review of existing interface charge transport models with original developments, and introduces a unified representation of charge transport at semiconductor interfaces.
Download or read book Introduction to Nanoelectronics written by Vladimir V. Mitin and published by Cambridge University Press. This book was released on 2008 with total page 346 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive textbook on nanoelectronics covering the underlying physics, nanostructures, nanomaterials and nanodevices.
Download or read book Full band Quantum Transport Simulation of Advanced Nanodevices written by Sylvan Brocard and published by . This book was released on 2014 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor industry, in its continued effort to scale down nanoscale components further, needs to predict the physical properties of future components. As the size of such devices shrinks down, the currently prevalent semi-classical models start to fall apart, as quantum effects that are usually invisible in larger silicon devices gain in relevance in smaller and/or III-V based semiconductor devices. Therefore, modeling and simulation tools should describe adequately the favorite technological options that are currently under investigation. Consequently, full quantum simulations are necessary to the development of modern field effect transistors.The purpose of this PhD thesis is to develop the tools suitable for those simulations and use them to look into some of the most relevant design options for transistor technology.Hence, we used the Non Equilibrium Green's Functions formalism to simulate charge carriers transport and investigate field effect transistors.The semiconductor band structures were calculated within a continuous kp formalism, but we also developed an atomistic effective pseudopotential method to perform full-band simulations with a variety of ingredients like arbitrary crystal orientation, surface roughness, arbitrary alloy composition in the transistor channel, and so on. This pseudopotential method provides accurate results for a wider array of configurations with a smaller parametrization effort than the k.p formalism.We used these simulation tools to evaluate the transport properties of silicon and InAs based FinFETs, focusing on the supply-voltage scalability of III-V based devices compared to silicon counterparts. In particular, the feasibility of obtaining large on-current values in III-V devices is discussed.Then, we applied that formalism to III-V based gate all-around (GAA) nanowire tunnel-FETs (TFETs). Tunnel-FETs are a promising architecture for future transistors, facing optimization and performance challenges. We aimed at benchmarking the effect of technological boosters on the performances of TFETs, namely the use of strain engineering and of III-V heterojunctions. We've shown that these boosters allow TFETs to theoretically outperform standard MOSFET technology, but that strain engineering induces undesirable drawbacks.In order to design high performance TFETs without the use of strain, we finally introduced novel design options by exploiting a molar fraction grading of a ternary alloy or alternatively a quantum well in the source region. These device configurations dramatically change the density of state of the TFET at the source/channel junction and are therefore able to improve the electrical performance of TFETs with respect to conventional MOSFETs.
Download or read book Theory of Transport Properties of Semiconductor Nanostructures written by Eckehard Schöll and published by Springer Science & Business Media. This book was released on 1997-12-31 with total page 418 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent advances in the fabrication of semiconductors have created almost un limited possibilities to design structures on a nanometre scale with extraordinary electronic and optoelectronic properties. The theoretical understanding of elec trical transport in such nanostructures is of utmost importance for future device applications. This represents a challenging issue of today's basic research since it requires advanced theoretical techniques to cope with the quantum limit of charge transport, ultrafast carrier dynamics and strongly nonlinear high-field ef fects. This book, which appears in the electronic materials series, presents an over view of the theoretical background and recent developments in the theory of electrical transport in semiconductor nanostructures. It contains 11 chapters which are written by experts in their fields. Starting with a tutorial introduction to the subject in Chapter 1, it proceeds to present different approaches to transport theory. The semiclassical Boltzmann transport equation is in the centre of the next three chapters. Hydrodynamic moment equations (Chapter 2), Monte Carlo techniques (Chapter 3) and the cellular au tomaton approach (Chapter 4) are introduced and illustrated with applications to nanometre structures and device simulation. A full quantum-transport theory covering the Kubo formalism and nonequilibrium Green's functions (Chapter 5) as well as the density matrix theory (Chapter 6) is then presented.
Download or read book Topics In High Field Transport In Semiconductors written by Kevin F Brennan and published by World Scientific. This book was released on 2001-07-31 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book examines some of the charge carrier transport issues encountered in the field of modern semiconductor devices and novel materials. Theoretical approaches to the understanding and modeling of the relevant physical phenomena, seen in devices that have very small spatial dimensions and that operate under high electric field strength, are described in papers written by leading experts and pioneers in this field. In addition, the book examines the transport physics encountered in novel materials such as wide band gap semiconductors (GaN, SiC, etc.) as well as organic semiconductors. Topics in High Field Transport in Semiconductors provides a comprehensive overview that will be beneficial to newcomers as well as engineers and researchers engaged in this exciting field.
Download or read book Semiconductor Nanostructures written by Dieter Bimberg and published by Springer Science & Business Media. This book was released on 2008-06-03 with total page 369 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reducing the size of a coherently grown semiconductor cluster in all three directions of space to a value below the de Broglie wavelength of a charge carrier leads to complete quantization of the energy levels, density of states, etc. Such “quantum dots” are more similar to giant atoms in a dielectric cage than to classical solids or semiconductors showing a dispersion of energy as a function of wavevector. Their electronic and optical properties depend strongly on their size and shape, i.e. on their geometry. By designing the geometry by controlling the growth of QDs, absolutely novel possibilities for material design leading to novel devices are opened. This multiauthor book written by world-wide recognized leaders of their particular fields and edited by the recipient of the Max-Born Award and Medal 2006 Professor Dieter Bimberg reports on the state of the art of the growing of quantum dots, the theory of self-organised growth, the theory of electronic and excitonic states, optical properties and transport in a variety of materials. It covers the subject from the early work beginning of the 1990s up to 2006. The topics addressed in the book are the focus of research in all leading semiconductor and optoelectronic device laboratories of the world.
Download or read book Transport in Nanostructures written by David K. Ferry and published by Cambridge University Press. This book was released on 2009-08-20 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: The advent of semiconductor structures whose characteristic dimensions are smaller than the mean free path of carriers has led to the development of novel devices, and advances in theoretical understanding of mesoscopic systems or nanostructures. This book has been thoroughly revised and provides a much-needed update on the very latest experimental research into mesoscopic devices and develops a detailed theoretical framework for understanding their behaviour. Beginning with the key observable phenomena in nanostructures, the authors describe quantum confined systems, transmission in nanostructures, quantum dots, and single electron phenomena. Separate chapters are devoted to interference in diffusive transport, temperature decay of fluctuations, and non-equilibrium transport and nanodevices. Throughout the book, the authors interweave experimental results with the appropriate theoretical formalism. The book will be of great interest to graduate students taking courses in mesoscopic physics or nanoelectronics, and researchers working on semiconductor nanostructures.
Download or read book Nanostructured Energy Devices written by Juan Bisquert and published by CRC Press. This book was released on 2017-07-28 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second volume, Foundations of Carrier Transport, presents a catalogue of the physics of carrier transport in semiconductors with a view to energy device models. We systematically explain the diffusion-drift model that is central to solar cell operation, the different responses of band bending and electrical field distribution that occur when a voltage is applied to a device with contacts and the central issue of injection and mechanisms of contacts. We describe the carrier transport in disordered materials that often appear as good candidates for easily processed solar cells. There are also excursions into other important topics such as the transistor configuration and the frequency domain techniques as Impedance Spectroscopy that produce central experimental tools for the characterization of the devices.
Download or read book Transport in Nanostructures written by David K. Ferry and published by Cambridge University Press. This book was released on 2009-08-20 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: The advent of semiconductor structures whose characteristic dimensions are smaller than the mean free path of carriers has led to the development of novel devices, and advances in theoretical understanding of mesoscopic systems or nanostructures. This book has been thoroughly revised and provides a much-needed update on the very latest experimental research into mesoscopic devices and develops a detailed theoretical framework for understanding their behaviour. Beginning with the key observable phenomena in nanostructures, the authors describe quantum confined systems, transmission in nanostructures, quantum dots, and single electron phenomena. Separate chapters are devoted to interference in diffusive transport, temperature decay of fluctuations, and non-equilibrium transport and nanodevices. Throughout the book, the authors interweave experimental results with the appropriate theoretical formalism. The book will be of great interest to graduate students taking courses in mesoscopic physics or nanoelectronics, and researchers working on semiconductor nanostructures.
Download or read book Semiconductor Devices written by Amal Banerjee and published by Springer Nature. This book was released on 2023-10-16 with total page 305 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book examines in detail how a semiconductor device is designed and fabricated to satisfy best the requirements of the target application. The author presents and explains both basic and state-of-art semiconductor industry standards used in large/small signal equivalent circuit models for semiconductor devices that electronics engineers routinely use in their design calculations. The presentation includes detailed, step-by-step information on how a semiconductor device is fabricated, and the very sophisticated supporting technologies used in the process flow. The author also explains how standard laboratory equipment can be used to extract useful performance metrics of a semiconductor device.
Download or read book Study of Electron Transport in Semiconductor Nanodevices written by Peng Liu and published by LAP Lambert Academic Publishing. This book was released on 2012-02 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: Scanning gate microscopy (SGM), developed in the late 1990's, has become a powerful tool to investigate the local electronic properties in semiconductor nano devices. SGM is based on the AFM technique but the metallic tip is used as a movable gate capacitively coupled to the device, and the electron transport property is studied on influence of this gate, providing spatial information with high resolution. This thesis presents the SGM measurement results on various nano devices, all of which are fabricated from InGaAs/InAlAs heterostructures containing a high mobility 2DEG located a few tens of nanometers below the surface. In a work on Braess paradox, with the help of numerical simulations, we discover a Braess paradox effect by modulating a channel width in a 'double-ring' shaped mesoscopic device in analogy with the one that occurs in a classical network. By a detailed study of the conductance changes, we discover several charge traps from the SGM map, and propose a model to interpret the conductance change with the presence of charge traps. We develop a method to directly image the charge traps by transconductance measurements with a voltage modulation on the tip.
Download or read book Electron Transport Phenomena in Semiconductors written by B. M. Askerov and published by World Scientific. This book was released on 1994 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first systematic and detailed exposition of the linear theory of the stationary electron transport phenomena in semiconductors. Arbitrary isotropic and anisotropic nonparabolic bands as well as p-Ge-type bands are considered. Phonon drag effect are taken account of in an arbitrary nonquantizing magnetic field. Scattering theory is discussed in detail with account taken of the Bloch wave functions effect. Transport phenomena in the quantizing magnetic field are studied as well as the size effects in thin films. Band structures of the semiconductors and semiconductor compounds of interest are also considered.The main part of the book deals with the three important problems: charge carrier statistics in a semiconductor, classical and quantum theory of the electron transport phenomena. All the theoretical results considered as well as the validity conditions are presented in the form which may be directly used to interpret experimental data.
Download or read book Hot Carriers in Semiconductors written by FERRY and published by IOP Publishing Limited. This book was released on 2021-12-24 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt: This research and reference text provides up-to-date coverage of the latest research on hot carriers in semiconductors, with a focus on the background, theoretical approaches, measurements and physical understanding required to engage with the field. Pitched at an introductory level, it equips researchers transitioning from optics to fully understand the role of hot carriers in semiconductors, and is a core text for graduate courses in hot carrier phenomena.
