Download or read book Transmission Electron Microscopy Studies and Simulations of Heteroepitaxial Diamond Nucleation on Ir YSZ Si written by Rosaria Brescia and published by . This book was released on 2013 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book 12 written by and published by . This book was released on 1979 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nucleation and Growth of Heteroepitaxial Diamond written by Connie Rebecca Bednarski-Meinke and published by . This book was released on 2002 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth and Characterization of Diamond Thin Films written by Sattar Mirzakuchaki and published by . This book was released on 1996 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical vapor deposited (CVD) diamond thin films grown homoepitaxially as well as on non-diamond substrates have been the subject of intense investigation since the beginning of the last decade. Diamond's remarkable properties such as physical hardness, chemical inertness, high thermal conductivity, high breakdown voltage, and high carrier mobility are the main factors for the attention it has received from many researchers around the world. Although these properties are somewhat degraded in polycrystalline diamond films, they are still superior to many other materials. One of the most potentially useful applications of diamond thin films is in the semiconductor industry. Although a few prototype devices such as field effect transistors and Schottky diodes have been fabricated on diamond, some major obstacles remain to be overcome before full scale commercial applications of diamond as a semiconductor is possible. The high cost of large area monocrystalline diamond substrates has forced researchers to look for alternative substrates for the heteroepitaxial growth of diamond. So far only marginal results have been reported on the growth of highly oriented diamond films and on the heteroepitaxial growth involving substrates that are as costly as diamond. Silicon, as the dominant material in semiconductor industry, has been the subject of much research as a substrate for the growth of polycrystalline diamond. Another problem in development of diamond as a semiconductor is the effective doping of diamond, particularly for n-type conductivity. Although many researchers have studied boron-doped (p-type) diamond thin films in the past several years, there have been few reports on the effects of doping diamond films with phosphorous (n-type). Once these two issues have been solved, other fabrication steps such as oxidation, etching, masking, etc. may be attempted. The present work is a study directed toward solving some of these problems by looking at in-situ doping of n-type hot filament CVD (HFCVD) grown diamond films on silicon substrates. The study includes electrical characterization, stable metallic contacts, effect of silicon substrate surface pretreatment, and selective area deposition. A number of different techniques for inducing diamond nucleation on Si substrates are studied and the resulting diamond films characterized by common techniques such as Raman spectroscopy, X-ray diffraction, optical and scanning electron microscopy, and profilometery. The effect of doping the diamond films with different concentrations of phosphorous as well as calculation of the activation energy by temperature measurement was also carried out in this work. A new technique is presented for the selective deposition of diamond films onto silicon substrates.

Download or read book Diamond for Quantum Applications Part 2 written by and published by Academic Press. This book was released on 2020-10-15 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt: Diamond for Quantum Applications Part Two, Volume 104, the latest release in the Semiconductors and Semimetals series, highlights new advances in the field, with this new volume presenting interesting chapters on a variety of timely topics including Color center formation by deterministic single ion implantation, Diamond and Its Investigation by Advanced TEM, Fundaments of photo-electric readout of spin states in diamond, Integrated quantum photonic circuits with polycrystalline diamond, Diamond Membranes, and Diamond nanophotonic and opt mechanics. - Provides the authority and expertise of leading contributors from an international board of authors - Presents the latest release in the Semiconductors and Semimetals series - Updated release includes the latest information on the use of diamonds for quantum applications

Download or read book CVD Diamond for Electronic Devices and Sensors written by Ricardo S. Sussmann and published by John Wiley & Sons. This book was released on 2009-01-09 with total page 596 pages. Available in PDF, EPUB and Kindle. Book excerpt: Synthetic diamond is diamond produced by using chemical or physical processes. Like naturally occurring diamond it is composed of a three-dimensional carbon crystal. Due to its extreme physical properties, synthetic diamond is used in many industrial applications, such as drill bits and scratch-proof coatings, and has the potential to be used in many new application areas A brand new title from the respected Wiley Materials for Electronic and Optoelectronic Applications series, this title is the most up-to-date resource for diamond specialists. Beginning with an introduction to the properties of diamond, defects, impurities and the growth of CVD diamond with its imminent commercial impact, the remainder of the book comprises six sections: introduction, radiation sensors, active electronic devices, biosensors, MEMs and electrochemistry. Subsequent chapters cover the diverse areas in which diamond applications are having an impact including electronics, sensors and actuators and medicine.

Download or read book Diamond Heteroepitaxy by Bias Enhanced Nucleation written by Vidhya Sagar Jayaseelan and published by . This book was released on 2008 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt: Diamond has exceptional semiconducting and optical properties that can be used for a wide variety of new applications such as high temperature, high power devices, and optical windows. Exploitation of these properties of diamond needs the development of heteroepitaxial diamond growth process on traditional substrates such as Silicon and Silicon Carbide. Bias enhanced nucleation (BEN) followed by Plasma Enhanced Chemical vapor Deposition (PECVD) has been recognized as a promising route to achieve this goal. However, the BEN process for heteroepitaxy and its mechanism is not well understood. In this study, a system is designed and fabricated to enable the application of bias during diamond deposition in an ASTEX PECVD system, and heteroepitaxial diamond films are grown. The evolution of the oriented diamond film and its microstructure is studied by SEM, TEM, and XRD techniques revealing the formation of misoriented grains, extensive twinning and low angle grain boundaries. The effect of the BEN process conditions on the degree of orientation is investigated. It is observed that the orientation of the films improved at lower bias durations, methane flow rates and bias voltages. TEM images of the nucleation layer are analyzed, and the changes in the nucleation layer grain structure with process parameters are studied. Significant variation in the microstructure and grain size from an average of about 560 nm to about 10 nm is observed with change in process conditions. The BEN process is investigated and the nature of the deposit forming during this step is revealed using SEM, TEM and Raman spectroscopy to be predominantly a nanocrystalline diamond film along with rhombohedral and amorphous carbon. A simple model based on the formation of a nanocrystalline diamond particles during BEN, followed by their growth and coalescence under the plasma is proposed to describe the oriented film formation. The variations in microstructures and orientation are correlated with the process conditions under which they are formed.

Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1256 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Science Abstracts written by and published by . This book was released on 1995 with total page 1990 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 974 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ceramic Abstracts written by American Ceramic Society and published by . This book was released on 1995 with total page 1150 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Oxide Electronics written by Asim K. Ray and published by John Wiley & Sons. This book was released on 2021-04-12 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: Oxide Electronics Multiple disciplines converge in this insightful exploration of complex metal oxides and their functions and properties Oxide Electronics delivers a broad and comprehensive exploration of complex metal oxides designed to meet the multidisciplinary needs of electrical and electronic engineers, physicists, and material scientists. The distinguished author eschews complex mathematics whenever possible and focuses on the physical and functional properties of metal oxides in each chapter. Each of the sixteen chapters featured within the book begins with an abstract and an introduction to the topic, clear explanations are presented with graphical illustrations and relevant equations throughout the book. Numerous supporting references are included, and each chapter is self-contained, making them perfect for use both as a reference and as study material. Readers will learn how and why the field of oxide electronics is a key area of research and exploitation in materials science, electrical engineering, and semiconductor physics. The book encompasses every application area where the functional and electronic properties of various genres of oxides are exploited. Readers will also learn from topics like: Thorough discussions of High-k gate oxide for silicon heterostructure MOSFET devices and semiconductor-dielectric interfaces An exploration of printable high-mobility transparent amorphous oxide semiconductors Treatments of graphene oxide electronics, magnetic oxides, ferroelectric oxides, and materials for spin electronics Examinations of the calcium aluminate binary compound, perovoksites for photovoltaics, and oxide 2Degs Analyses of various applications for oxide electronics, including data storage, microprocessors, biomedical devices, LCDs, photovoltaic cells, TFTs, and sensors Suitable for researchers in semiconductor technology or working in materials science, electrical engineering, and physics, Oxide Electronics will also earn a place in the libraries of private industry researchers like device engineers working on electronic applications of oxide electronics. Engineers working on photovoltaics, sensors, or consumer electronics will also benefit from this book.

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2710 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Optical Properties of Diamond written by A.M. Zaitsev and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook is the most comprehensive compilation of data on the optical properties of diamond ever written. It presents a multitude of data previously for the first time in English. The author provides quick access to the most comprehensive information on all aspects of the field.

Download or read book Ultra wide Bandgap Semiconductor Materials written by Meiyong Liao and published by Elsevier. This book was released on 2019-06-18 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. - Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, ß-Ga2O3, boron nitrides, and low-dimensional materials - Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance - Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics

Download or read book Power Electronics Device Applications of Diamond Semiconductors written by Satoshi Koizumi and published by Woodhead Publishing. This book was released on 2018-06-29 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power Electronics Device Applications of Diamond Semiconductors presents state-of-the-art research on diamond growth, doping, device processing, theoretical modeling and device performance. The book begins with a comprehensive and close examination of diamond crystal growth from the vapor phase for epitaxial diamond and wafer preparation. It looks at single crystal vapor deposition (CVD) growth sectors and defect control, ultra high purity SC-CVD, SC diamond wafer CVD, heteroepitaxy on Ir/MqO and needle-induced large area growth, also discussing the latest doping and semiconductor characterization methods, fundamental material properties and device physics. The book concludes with a discussion of circuits and applications, featuring the switching behavior of diamond devices and applications, high frequency and high temperature operation, and potential applications of diamond semiconductors for high voltage devices. - Includes contributions from today's most respected researchers who present the latest results for diamond growth, doping, device fabrication, theoretical modeling and device performance - Examines why diamond semiconductors could lead to superior power electronics - Discusses the main challenges to device realization and the best opportunities for the next generation of power electronics

Download or read book Ferroelectricity in Doped Hafnium Oxide written by Uwe Schroeder and published by Woodhead Publishing. This book was released on 2019-03-27 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. - Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices - Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more - Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face