Download or read book Transistor Physics written by K. G. Nichols and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is intended as an introduction to the application of physical theory to the study of semiconductors and transistor devices. The book is based on lecture courses given by the authors to second and third year honours students in the Electronics Department of Southampton University, England. Some elementary knowledge of physics, circuit theory, and vector methods is assumed. The book deals almost exc1u sively with the theoretical aspects, but references are given to experi mental work. The first two chapters discuss c1assical atomic theory and quantum mechanical applications to electron energy levels in atoms, in particular the hydrogen atom, and in one-dimensional crystalline solids leading to the distinctions between metals, insulators, and semiconductors. Chapter 3 deals with statistical mechanics in some detail, so that the reader can appreciate the historical background leading to the Fermi Dirac statistics for electrons in metals and semiconductors, and in chapter 4 these statistics are applied to determine the current carrier density in various types of semiconductor. Equations for drift and diffusion currents are obtained in chapter 5, and the results applied to uiliform and graded impurity semiconductors in chapter 6. Current flow across p-n junctions is analysed in chapter 7, and the p-n-p transistor theory is developed in chapter 8. The discussion is limited to p-n-p transistors, but similar results apply for the n-p-n transistor.
Download or read book Field Effect and Bipolar Power Transistor Physics written by Adolph Blicher and published by Elsevier. This book was released on 2012-12-02 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: Field-Effect and Bipolar Power Transistor Physics introduces the physics of operation of power transistors. It deals with bipolar devices as well as field-effect power transistors. The book provides an up-to-date account of the progress made in power transistor design. This volume consists of three parts. Part I examines general considerations and reviews semiconductor surface theory as a background to understanding surface phenomena. It also discusses the effect of high carrier concentration on the semiconductor properties. Part II deals with bipolar transistors and the basic structures of power transistors. Part III discusses junction field-effect and surface field-effect transistors. This book is written for electrical engineers who design power transistor circuits, device physicists and designers, and university students. The reader should have some familiarity with small signal transistor physics as the presentation is at the senior undergraduate or first-year graduate level.
Download or read book Nanowire Transistors written by Jean-Pierre Colinge and published by Cambridge University Press. This book was released on 2016-04-21 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: A self-contained and up-to-date account of the current developments in the physics and technology of nanowire semiconductor devices.
Download or read book The IGBT Device written by B. Jayant Baliga and published by William Andrew. This book was released on 2015-03-06 with total page 733 pages. Available in PDF, EPUB and Kindle. Book excerpt: The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists. - Essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors. - Readers will learn the methodology for the design of IGBT chips including edge terminations, cell topologies, gate layouts, and integrated current sensors. - The first book to cover applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion; written by the inventor of the device.
Download or read book Fundamentals of Transistor Physics written by Irving M. Gottlieb and published by . This book was released on 1960 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Introduction to Thin Film Transistors written by S.D. Brotherton and published by Springer Science & Business Media. This book was released on 2013-04-16 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: Introduction to Thin Film Transistors reviews the operation, application and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. As well as treating the highly divergent preparation and properties of these materials, the physics of the devices fabricated from them is also covered, with emphasis on performance features such as carrier mobility limitations, leakage currents and instability mechanisms. The thin film transistors implemented with these materials are the conventional, insulated gate field effect transistors, and a further chapter describes a new thin film transistor structure: the source gated transistor, SGT. The driving force behind much of the development of TFTs has been their application to AMLCDs, and there is a chapter dealing with the operation of these displays, as well as of AMOLED and electrophoretic displays. A discussion of TFT and pixel layout issues is also included. For students and new-comers to the field, introductory chapters deal with basic semiconductor surface physics, and with classical MOSFET operation. These topics are handled analytically, so that the underlying device physics is clearly revealed. These treatments are then used as a reference point, from which the impact of additional band-gap states on TFT behaviour can be readily appreciated. This reference book, covering all the major TFT technologies, will be of interest to a wide range of scientists and engineers in the large area electronics industry. It will also be a broad introduction for research students and other scientists entering the field, as well as providing an accessible and comprehensive overview for undergraduate and postgraduate teaching programmes.
Download or read book Physics of Semiconductor Devices written by Dilip K Roy and published by Universities Press. This book was released on 2004 with total page 492 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nanoscale Transistors written by Mark Lundstrom and published by Springer Science & Business Media. This book was released on 2006-06-18 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules
Download or read book Quantum Transport written by Supriyo Datta and published by Cambridge University Press. This book was released on 2005-06-16 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the conceptual framework underlying the atomistic theory of matter, emphasizing those aspects that relate to current flow. This includes some of the most advanced concepts of non-equilibrium quantum statistical mechanics. No prior acquaintance with quantum mechanics is assumed. Chapter 1 provides a description of quantum transport in elementary terms accessible to a beginner. The book then works its way from hydrogen to nanostructures, with extensive coverage of current flow. The final chapter summarizes the equations for quantum transport with illustrative examples showing how conductors evolve from the atomic to the ohmic regime as they get larger. Many numerical examples are used to provide concrete illustrations and the corresponding Matlab codes can be downloaded from the web. Videostreamed lectures, keyed to specific sections of the book, are also available through the web. This book is primarily aimed at senior and graduate students.
Download or read book Transistors written by E. J. M. Kendall and published by Elsevier. This book was released on 2016-06-23 with total page 341 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transistors reviews major advances that have been made with respect to transistors and illustrates some of the many facets of transistor research and development. Topics covered range from point contact devices and junction devices to p-n junctions in semiconductors, unipolar and analog transistors, and hole injection in transistor action. The physical principles involved in transistor action are also discussed, along with the nature of the forward current in germanium point contacts. This book is comprised of 19 papers and begins with a summary of the semiconductor physics pertinent to the understanding of transistors. The reader is then introduced to developments in point contact devices and junction devices; how the conductance of thin films of semiconductors is modulated by surface charges; the relation between surface states and rectification at a metal-semiconductor contact; and a three-element electronic device that utilizes a semiconductor as the basic element. The remaining papers focus on p-n junction transistors; the theory of alpha for p-n-p diffused junction transistors; and unipolar and analog transistors. The effects of electrical forming on the rectifying barriers of n- and p-germanium transistors are also analyzed. The final chapter describes a thin-film transistor fabricated by evaporation of all components onto an insulating substrate. This monograph will be of interest to physicists and electronics engineers.
Download or read book University Physics written by OpenStax and published by . This book was released on 2016-11-04 with total page 622 pages. Available in PDF, EPUB and Kindle. Book excerpt: University Physics is a three-volume collection that meets the scope and sequence requirements for two- and three-semester calculus-based physics courses. Volume 1 covers mechanics, sound, oscillations, and waves. Volume 2 covers thermodynamics, electricity and magnetism, and Volume 3 covers optics and modern physics. This textbook emphasizes connections between between theory and application, making physics concepts interesting and accessible to students while maintaining the mathematical rigor inherent in the subject. Frequent, strong examples focus on how to approach a problem, how to work with the equations, and how to check and generalize the result. The text and images in this textbook are grayscale.
Download or read book Semiconductor Physics and Devices written by Donald A. Neamen and published by . This book was released on 2003 with total page 746 pages. Available in PDF, EPUB and Kindle. Book excerpt: This text aims to provide the fundamentals necessary to understand semiconductor device characteristics, operations and limitations. Quantum mechanics and quantum theory are explored, and this background helps give students a deeper understanding of the essentials of physics and semiconductors.
Download or read book Crystal Fire written by Michael Riordan and published by W. W. Norton & Company. This book was released on 1997 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt: It's hard to imagine any device more crucial to modern life than the microchip and the transistor from which it sprang. Every waking hour of every day people benefit from its use in cellular phones, computers, radios, TVs, and ATMs. This eloquent retelling of the story behind the invention of the transistor recounts how pride and jealousy coupled with scientific aspirations ignited the greatest technological explosion in history. Photos & drawings.
Download or read book Physics written by Alfred B. Bortz and published by Infobase Publishing. This book was released on 2014-05-14 with total page 289 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contains a history of physics providing definitions and explanations of related topics and brief biographies of scientists of the twentieth century.
Download or read book Ferroelectric Gate Field Effect Transistor Memories written by Byung-Eun Park and published by Springer Nature. This book was released on 2020-03-23 with total page 421 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
Download or read book Transistors written by Mark S Lundstrom and published by World Scientific. This book was released on 2022-12-19 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt: Current leading-edge CMOS transistors are about as small as they will get. We now have a simple, clear, very physical understanding of how these devices function, but it has not yet entered our textbooks. Besides, CMOS logic transistors, power transistors are increasingly important as are III-V heterostructure transistors for high-frequency communication. Transistor reliability is also important but rarely treated in introductory textbooks.As we begin a new era, in which making transistors smaller will no longer be a major driving force for progress, it is time to look back at what we have learned in transistor research. Today we see a need to convey as simply and clearly as possible the essential physics of the device that makes modern electronics possible. That is the goal of these lectures. This volume rearranges the familiar topics and distills the most essential among them, while adding most recent approaches which have become crucial to the discussion. To follow the lectures, readers need only a basic understanding of semiconductor physics. Familiarity with transistors and electronic circuits is helpful, but not assumed.Related Link(s)
Download or read book FinFETs and Other Multi Gate Transistors written by J.-P. Colinge and published by Springer Science & Business Media. This book was released on 2008 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.
