Download or read book Measurement of Transistor Scattering Parameters written by George J. Rogers and published by . This book was released on 1975 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Measurement of Transistor Scattering Parameters written by George J. Rogers and published by . This book was released on 1975 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Transistor Parameter Measurements at 10 7 MC written by Raiford Andrew Blackstone and published by . This book was released on 1965 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Measurement of Transistor Scattering Parameters written by George J. Rogers and published by . This book was released on 1975 with total page 48 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Transistor Parameter Measurements written by and published by . This book was released on 1967 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Transistor S parameter Measurement written by Shousui Rao and published by . This book was released on 1993 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Accurate Measurement of Transistor Parameters at V H F 30 300 MHZ written by Mohamed Mahmoud Mansour and published by . This book was released on 1971 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nonlinear Transistor Model Parameter Extraction Techniques written by Matthias Rudolph and published by Cambridge University Press. This book was released on 2011-10-13 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.
Download or read book Transistor Modeling for Scattering Parameter Measurements written by Victor M Simi and published by . This book was released on 1974 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Standard for the Measurement of Small signal Transistor Scattering Parameters written by and published by . This book was released on 1976 with total page 19 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Measurement Technology written by George J. Rogers and published by . This book was released on 1975 with total page 48 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Parameter Extraction and Complex Nonlinear Transistor Models written by Gunter Kompa and published by Artech House. This book was released on 2019-12-31 with total page 610 pages. Available in PDF, EPUB and Kindle. Book excerpt: All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.
Download or read book Measurement of Transistor Parameters written by Reinhold Paul and published by . This book was released on 1969 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Measurement of High Frequency Transistor Scattering Parameters by Time domain Techniques written by N. H. C. Marshall and published by . This book was released on 1970 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Methods of Measurement for Semiconductor Materials Process Control and Devices written by W. Murray Bullis and published by . This book was released on 1972 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Detailed Study of Uncertainties in On wafer Transistor Noise parameter Measurements written by James Randa and published by . This book was released on 2016 with total page 33 pages. Available in PDF, EPUB and Kindle. Book excerpt: This paper uses a Monte Carlo simulation program to explore various aspects of uncertainties associated with the measurement of the noise parameters of transistors on wafers. The dependence of the noise-parameter uncertainties on the different input uncertainties is investigated in detail. Other issues that are considered include the effect of probe losses, the importance (or not) of including input terminations with reflection coefficients as near as possible to the edge of the Smith chart, improvements due to inclusion of an input termination with noise temperature well below ambient, and the effect of including a 'reverse' measurement. We also briefly consider the case of well-matched amplifiers on wafers.
Download or read book The Measurement of Lumped Parameter Impedance written by Raymond N. Jones and published by . This book was released on 1974 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: The measurement of two-terminal impedance in the 30 kHz to 300 MHz range involves a variety of different methods including null, resonance, active and comparison. Each method is represented by a number of instruments having specific capabilities, strengths, and weaknesses. This metrology guide is intended to assist the scientist who is not intimately familiar with impedance measurement, in the selection and use of the best instrument for a particular requirement. Information is included on range and accuracy capabilities as well as availability and ease of operation. In addition to providing help in the selection of the appropriate instrument, there are operating tips which enhance accuracy, criteria for choosing standards, means for extending normal measurement range of an instrument, a discussion on generators and detectors, and a section on the evaluation and use of adapters. (Modified author abstract).
