Download or read book Transient one dimensional numerical analysis of bipolar power semiconductor devices written by C. Christiaan Abbas and published by . This book was released on 1984 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Transient One dimensional Numerical Analysis of Bipolar Power Semiconductor Devices written by C. C. Abbas and published by . This book was released on 1984 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Transient One dimensional Numerical Analysis of Bipolar Power Demiconductor Devices written by C. Christiaan Abbas and published by . This book was released on 1984 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Transient One dimensional Numerical Analysis of Biopolar Power Semiconductor Devices written by C. Christiaan Abbas and published by . This book was released on 1984 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Transient Electro Thermal Modeling of Bipolar Power Semiconductor Devices written by Tanya Kirilova Gachovska and published by Morgan & Claypool Publishers. This book was released on 2013-11-01 with total page 85 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.

Download or read book Two dimensional Numerical Analysis of Semiconductor Devices Application to Bipolar Transistors written by David D. Meyer and published by . This book was released on 1972 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book An Introduction to the Numerical Analysis of Semiconductor Devices and Integrated Circuits written by John J. H. Miller and published by . This book was released on 1981 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt: Companion volume to NASECODE II Conference proceedings.

Download or read book Analysis and Simulation of Semiconductor Devices written by S. Selberherr and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.

Download or read book Numerical Methods for Transient Semiconductor Device Modelling written by C. Ringhofer and published by . This book was released on 1983 with total page 39 pages. Available in PDF, EPUB and Kindle. Book excerpt: A mixed system of parabolic and elliptic partial differential equations is used to describe the carrier transport and potential distribution in semi-conductor devices such as MOSFETs, diodes, etc. A singular perturbation analysis of the corresponding initial boundary value problem is carried out. Asymptotic expansions of the solution in powers of the minimal Debeye length are given. Based on this analysis a finite difference method for the numerical solution of these problems is developed. Here problems arise due to different time scales which are intrinsically present in the analytical problem. These different time scales do not occur in the physical solutions because of special (equilibrium- ) initial conditions. Nevertheless they cause severe stability problems for finite difference methods. An unconditionally stable scheme is developed which minimizes computational effort. Numerical experiments on a test problem in one space dimension are presented. (Author).

Download or read book Numerical Method for the Solution of the Transient Behavior of Bipolar Semiconductor Devices written by Owe George Peterson and published by . This book was released on 1971 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Numerical Analysis of Semiconductor Devices and Integrated Circuits written by B. T. Browne and published by . This book was released on 1981 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Technology Computer Aided Design for Si SiGe and GaAs Integrated Circuits written by G.A. Armstrong and published by IET. This book was released on 2007-11-30 with total page 457 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to deal with a broad spectrum of process and device design, and modeling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-development engineers and scientists involved in microelectronics technology and device design via Technology CAD, and TCAD engineers and developers.

Download or read book Publications of the National Institute of Standards and Technology Catalog written by National Institute of Standards and Technology (U.S.) and published by . This book was released on 1991 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book NASECODE III written by John J. H. Miller and published by . This book was released on 1983 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Publications written by United States. National Bureau of Standards and published by . This book was released on 1991 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Power Semiconductor Devices and Circuits written by A.A. Jaecklin and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 401 pages. Available in PDF, EPUB and Kindle. Book excerpt: This symposium was the sCientific-technical event of the centennial celebration of the Asea Brown Boveri Switzerland. The purpose was to assess the present state of the art as well as shaping the basis for future progress in the area of power devices and related power circuits. The merger of Brown Boveri (BBC) with Asea to Asea Brown Boveri (ABB) three years ago gave new stimulus and enriched the technical substance of the symposium. By 1991, 100 years after the formation of BBC in Switzerland as a single company, this organization has been decentralized, forming 35 independent ABB companies. One of them - ABB Semiconductors Ltd. - directly deals with the power semiconductor business. These significant changes reflect the changes in the market place: increased competition and higher customer expectations have to be fulfilled. In line with the core business activities of ABB and with the concept of sustainable development, it is natural for ABB to be active in the area of power devices and circuits. Increased awareness towards energy conservation is one of the main drives for these activities. User friendliness is another drive: integration of intelligent functions, e.g. protection and/or increased direct computer interfacing of the power circuits. Therefore, also the R&D activities related to the subject of thIs symposium will in the future be characterized by an even stronger coupling with the market needs. For the members of the R&D Laboratories this means improved customer partnership beyond operational excellence.

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 880 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.