Download or read book Top gate Nanocrystalline Silicon Thin Film Transistors written by Hyun Jung Lee and published by . This book was released on 2008 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin film transistors (TFTs), the heart of highly functional and ultra-compact active-matrix (AM) backplanes, have driven explosive growth in both the variety and utility of large-area electronics over the past few decades. Nanocrystalline silicon (nc-Si:H) TFTs have recently attracted attention as a high-performance and low-cost alternative to existing amorphous silicon (a-Si:H) and polycrystalline silicon (poly-Si) TFTs, in that they have the strong potentials which a-Si:H (low carrier mobility and poor device stability) and poly-Si (poor device uniformity and high manufacturing cost) counterparts do not have. However, the current nc-Si:H TFTs expose several challenging material and devices issues, on which the dissertation focuses.
Download or read book The Design and Development of Nanocrystalline Silicon Thin Film Transistors written by Jarrod McDonald and published by . This book was released on 2004 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work reports on the fabrication of thin film transistor devices at low temperatures using hydrogenated-nanocrystalline silicon (nc-Si:H). Nanocrystalline silicon is a new electronic material, which is capable of being deposited at low temperatures on any substrate, and thus offers the possibility of making large area devices on flexible substrates. This work presents a design and process for fabricating 25 [mu]m length n-channel, top gate, thin film transistors. The TFTs were fabricated using hydrogenated-nanocrystalline silicon (nc-Si:H), deposited by plasma enhanced chemical vapor deposition (PECVD) over a thermally oxidized silicon wafer. The deposition was done at a temperature of 300°C. Metal layers were deposited by thermal evaporation and etching steps were done via dry etching in a reactive ion etching system and by wet etching. Silicon nitride, deposited by PECVD at 300°C, was used as the dielectric material in the TFT. MIS capacitors were made to judge the quality of the silicon nitride/nc-Si:H interface, and interface defect densities were measured using capacitance-voltage techniques. It was found that an interface defect density of approximately 4.55x1011 cm−1eV−1 was achievable with hydrogen passivation. MIM capacitors were made to determine the dielectric breakdown of the material. The silicon nitride layer broke down at an electric field of 4 MV/cm. The transistors tested have shown a threshold voltage (V[subscript TH])[nearly equal to]13.3 volts, a channel surface mobility (u)[nearly equal to].2 cm2/[V·sec] and an on-off ratio of [nearly equal to]103.
Download or read book Fabrication and Analysis of Bottom Gate Nanocrystalline Silicon Thin Film Transistors written by Kyung-Wook Shin and published by . This book was released on 2008 with total page 71 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin film transistors (TFTs) have brought prominent growth in both variety and utility of large area electronics market over the past few decades. Nanocrystalline silicon (nc-Si:H) TFTs have attracted attention recently, due to high-performance and low-cost, as an alternative of amorphous silicon (a-Si:H) and polycrystalline silicon (poly-Si) TFTs. The nc-Si:H TFTs has higher carrier mobility and better device stability than a-Si:H TFTs while lower manufacturing cost than poly-Si TFTs. However, current nc-Si:TFTs have several challenging issues on materials and devices, on which this thesis focuses. In the material study, the gate quality silicon nitride (a-SiNx) films and doped nc-Si:H contacts based on conventional plasma enhanced chemical vapor deposition (PECVD) are investigated. The feasibility of a-SiNx on TFT application is discussed with current-voltage (I-V)/capacitance-voltage(C-V) measurement and Fourier Transform Infrared Spectroscopy (FTIR) results which demonstrate 4.3 MV/cm, relative permittivity of 6.15 and nitrogen rich composition. The doped nc-Si:H for contact layer of TFTs is characterized with Raman Spectroscopy and I-V measurements to reveal 56 % of crystalinity and 0.42 S/cm of dark conductivity. Inverted staggered TFT structure is fabricated for nc-Si:H TFT device research using fully wet etch fabrication process which requires five lithography steps. The process steps are described in detail as well as adaptation of the fabrication process to a backplane fabrication for direct conversion X-ray imagers. The modification of TFT process for backplane fabrication involves two more lithography steps for mushroom electrode formation while other pixel components is incorporated into the five lithography step TFT process. The TFTs are electrically characterized demonstrating 7.22 V of threshold voltage, 0.63 S/decade of subthreshold slope, 0.07 cm2/V-s of field effect mobility, and 106 of on/off ratio. The transfer characteristics of TFTs reveal a severe effect of parasitic resistance which is induced from channel layer itself, a contact between channel layer and doped nc-Si:H contact layer, the resistance of doped nc-Si:H contact layer, and a contact between the doped nc-Si:H layer and source/drain metal electrodes. The parasitic resistance effect is investigated using numerical simulation method by various parasitic resistances, channel length of the TFT, and intrinsic properties of nc-Si:H channel layer. It reveals the parasitic resistance effect become severe when the channel is short and has better quality, therefore, several further research topics on improving contact nc-Si:H quality and process adjustment are required.
Download or read book Thin Film Transistors 10 TFT 10 written by Y. Kuo and published by The Electrochemical Society. This book was released on 2010-10 with total page 443 pages. Available in PDF, EPUB and Kindle. Book excerpt: This special issue of ECS Transactions is for the 20th anniversary of the Thin Film Transistor (TFT) symposium series. Renowned TFT experts in related materials, processes, devices, and applications from the world serve as invited speakers to review the technology and science progress in the past two decades. Selected contributed papers are also included in this issue.
Download or read book Thin Film Transistors Polycrystalline silicon thin film transistors written by Yue Kuo and published by Springer Science & Business Media. This book was released on 2004 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.
Download or read book Nanocrystalline Silicon Thin Film Transistors written by M. Bauza and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nanocrystalline Silicon Thin Film Transistors written by Durga Prasanna Panda and published by . This book was released on 2006 with total page 139 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this thesis, we will describe the growth and properties of p-channel nc-Si thin film transistor (TFT) devices. In contrast to previous work, a significant improvement in the hole mobility was achieved by an innovative approach of depositing nc-Si for the channel material using very high hydrogen dilution and low ion bombardment in a PECVD reactor. The doping of the body was changed by doping with ppm levels of phosphorous, and the threshold voltage was found to change systematically as phosphorus content increased. We were thus able to show that a high-quality nanocrystalline silicon material can be controllably doped in small amounts. The TFT devices are of the bottom-gate type, grown on oxidized Si wafers. Source and drain contacts were provided by using either plasma grown p type nanocrystalline layers, or by the simple process of Al diffusion. A top layer of plasma-deposited silicon dioxide was found to decrease the off current significantly. High ON/OFF current ratios exceeding 106 were obtained. Hole mobilities in the devices were consistently good, with the best mobility being in the range of ∼1.6 cm2/V-s, which is the highest so far to the best of our knowledge.
Download or read book Nanocrystalline Silicon Thin Film Transistor written by Mohammad-Reza Esmaeili-Rad and published by . This book was released on 2008 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) has been used in active matrix liquid crystal displays (LCDs) and medical x-ray imagers, in which the TFT acts as pixel switches. However, instability of a-Si:H TFT is a major issue in applications where TFTs are also required to function as analogue circuit elements, such as in emerging organic light emitting diode (OLED) displays. It is known that a-Si:H TFT shows drain current degradation under electrical operation, due to two instability mechanisms: (i) defect creation in the a-Si:H active layer, and (ii) charge trapping in the gate dielectric. Nanocrystalline silicon (nc-Si) TFT has been proposed as a high performance alternative. Therefore, this thesis focuses on the design of nc-Si TFT and its outstanding issues, in the industry standard bottom-gate structure. The key for obtaining a stable TFT lies in developing a highly crystalline nc-Si active layer, without the so-called amorphous incubation layer. Therefore, processing of nc-Si by plasma enhanced chemical vapor deposition (PECVD) is studied and PECVD parameters are optimized.
Download or read book Thin film transistors 1 Amorphous silicon thin film transistors written by Yue Kuo and published by Springer Science & Business Media. This book was released on 2004 with total page 538 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.
Download or read book Nanocrystalline Silicon Thin film Transistors written by Czang-Ho Lee and published by . This book was released on 2006 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thin Film Transistor Technologies VI written by Yue Kuo and published by The Electrochemical Society. This book was released on 2003 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thin Film Transistors 9 TFT 9 written by Y. Kuo and published by The Electrochemical Society. This book was released on 2008-10 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions includes all aspects of fabrication processes, materials, devices, and applications related to TFTs.
Download or read book Thin Film Transistor Technology 8 written by Yue Kuo and published by The Electrochemical Society. This book was released on 2006 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue includes funadmental and applied topics on materials, processes, devices, circuits, and new and novel applicaitons related to TFTs.
Download or read book Nanomaterials and Their Applications written by Zishan Husain Khan and published by Springer. This book was released on 2017-10-20 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the latest advances in the field of nanomaterials and their applications, and provides a comprehensive overview of the state-of-the-art of research in this rapidly developing field. The book comprises chapters exploring various aspects of nanomaterials. Given the depth and breadth of coverage, the book offers a valuable guide for researchers and students working in the area of nanomaterials.
Download or read book Nanocrystalline Silicon Thin Film Transistors on Plastic Substrates written by I-Chun Cheng and published by . This book was released on 2004 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Characteristics of Top gate Staggered Amorphous Silicon Thin film Transistors written by Chun-Sung Chiang and published by . This book was released on 1998 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thin Film Transistor Technologies TFTT VII written by Yue Kuo and published by The Electrochemical Society. This book was released on 2005 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt:
