Download or read book Process Induced Particulate Generation and Deposition During Reactive Ion Etching of SiO2 written by Paul James Resnick and published by . This book was released on 1991 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Reactive Ion Etching of PECVD Silicon Dioxide SiO2 Layer for MEMS Application written by and published by . This book was released on 2004 with total page 23 pages. Available in PDF, EPUB and Kindle. Book excerpt: A reactive ion etching (RIE) process has been developed to etch up to 1-micrometer (1 m) layer of low stress SiO2 (Silicon Dioxide) Plasma Enhanced Chemical Vapor Deposition (PECVD) film compatible for MEMS research applications. Etch rates from as low as 123 nm/min at 100 W to as high as 721 nm/min at 900 W powers were demonstrated using fluorocarbon (CF4) reactive gas plasma. RIE selectivity (SiO2/PR-Photoresist was 3:1 at 900W. The measured thickness variation was 0.13 m on 4-inch substrate for 1 m thick SiO2 film.
Download or read book Ion Bombardment Energy Control for Fluorocarbon Plasma Etching of Organosilicate Glass written by Rardchawadee Silapunt and published by . This book was released on 2004 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma Sources for Thin Film Deposition and Etching written by Maurice H. Francombe and published by Academic Press. This book was released on 2013-10-22 with total page 343 pages. Available in PDF, EPUB and Kindle. Book excerpt: This latest volume of the well-known Physics of Thin Films Series includes four chapters that discuss high-density plasma sources for materials processing, electron cyclotron resonance and its uses, unbalancedmagnetron sputtering, and particle formation in thin film processing plasma. - Chapter One develops a unified framework from which all "high-efficiency" sources may be viewed and compared; outlines key elements of source design affecting processing results; and highlights areas where additional research and development are needed - Chapter Two reviews and analyzes the main types of electron cyclotron resonance (ECR) plasma sources suitable for ECR PACVD of thin films, mainly ECR sources using magnet coils - Chapter Three examines the benefits and limitations of the new technique, unbalanced magnetron sputtering (UBM), along with the motivation for its development, the basic principles of its operation and commercial applications, and some speculations regarding the future of UBM technology - Chapter Four describes general phenomena observed in connection with particle formation in thin film processing plasmas; discusses particles in PECVD plasmas, sputtering plasmas, and RIE plasmas; presents an overview of the theoretical modeling of various aspects of particles in processing plasmas; examines issues of equipment design affecting particle formation; and concludes with remarks about the implications of this work for the control of process-induced particle contamination
Download or read book Reactive Ion Etching of Si SiO2 by CHF3 CH4 O2 Gas Mixture written by Usha Raghuram and published by . This book was released on 1993 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Control of Ion Energy at the Substrates During Plasma Processing written by Shiang-Bau Wang and published by . This book was released on 1999 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Semiconductor Manufacturing Technology written by Yoshio Nishi and published by CRC Press. This book was released on 2017-12-19 with total page 3276 pages. Available in PDF, EPUB and Kindle. Book excerpt: Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available. Stay Current with the Latest Technologies In addition to updates to nearly every existing chapter, this edition features five entirely new contributions on... Silicon-on-insulator (SOI) materials and devices Supercritical CO2 in semiconductor cleaning Low-κ dielectrics Atomic-layer deposition Damascene copper electroplating Effects of terrestrial radiation on integrated circuits (ICs) Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication. While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.
Download or read book Reactive Ion Etching of SiO2 Using CHF3 CO2 Gas Mixture written by Anthony Hyunwoo Chung and published by . This book was released on 1997 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Seventh Symposium on Automated Integrated Circuits Manufacturing written by Vaughn E. Akins and published by The Electrochemical Society. This book was released on 1992 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface 4 2000 written by Hisham Z. Massoud and published by . This book was released on 2000 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ionizing Radiation Effects in MOS Devices and Circuits written by T. P. Ma and published by John Wiley & Sons. This book was released on 1989-04-18 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.
Download or read book Plasma Diagnostics written by Orlando Auciello and published by Academic Press. This book was released on 2013-10-22 with total page 349 pages. Available in PDF, EPUB and Kindle. Book excerpt: Plasmas and their interaction with materials have become subjects of major interest because of their importance in modern forefront technologies such as microelectronics, fusion energy, and space. Plasmas are used in microelectronics to process semiconductors (etching of patterns for microcircuits, plasma-induced deposition of thin films, etc.); plasmas produce deleterious erosion effects on surfaces of materials used for fusion devices and spaceships exposed to the low earth environment.Diagnostics of plasmas and materials exposed to them are fundamental to the understanding of the physical and chemical phenomena involved. Plasma Diagnostics provides a comprehensive treatment of the subject.short version, TJE_Plasmas and their interaction with materials have become subjects of major interest because of their importance in modern forefront technologies such as microelectronics, fusion energy, and space. Diagnostics of plasmas and materials exposed to them are fundamental to the understanding of the physical and chemical phenomena involved. Plasma Diagnostics provides a comprehensive treatment of the subject.
Download or read book Damage Effects to Si SiO2 Structures Due to Reactive Ion Etching written by Moshé D. Bunyan and published by . This book was released on 1990 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Science and Technology of Mesoscopic Structures written by Susumu Namba and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt: The International Symposium on the Science and Technology of Mesoscopic Structures was held at Shin-Kohkaido in Nara from November 6-8, 1991. The symposium was sponsored by the International Institute for Advanced Study and partly by Nara Prefecture, Nara City, Nara Convention Bureau, and the Ministry of Education, Science and Culture of Japan, as well as industrial organizations. We would like to acknowledge the support of the symposium by these or ganizations. The scope of the symposium was planned by the organizing committee to cover outstanding contributors in the fields of (1) ballistic transport, (2) electron wave guides and interference effects, (3) quantum confinement effects, (4) tunneling phenomena, (5) optical nonlinearity, and (6) fabrication technology of meso scopic structures. Twenty-six invited speakers were selected from the United States, Europe, and Japan. In addition twenty-four contributed papers were accepted for presentation at the poster session. These papers are included in the proceedings. We are grateful to the organizing committee, Ms. Y oshiko Kusaki of the Inter national Institute for Advanced Study for the secretarial service, and Dr. Nobuya Mori, Osaka University, for his scientific cooperation. Thanks are also due to the authors and the participants for their contributions to a successful symposium.
Download or read book Dry Etching for VLSI written by A.J. van Roosmalen and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 247 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book has been written as part of a series of scientific books being published by Plenum Press. The scope of the series is to review a chosen topic in each volume. To supplement this information, the abstracts to the most important references cited in the text are reprinted, thus allowing the reader to find in-depth material without having to refer to many additional publications. This volume is dedicated to the field of dry (plasma) etching, as applied in silicon semiconductor processing. Although a number of books have appeared dealing with this area of physics and chemistry, these all deal with parts of the field. This book is unique in that it gives a compact, yet complete, in-depth overview of fundamentals, systems, processes, tools, and applications of etching with gas plasmas for VLSI. Examples are given throughout the fundamental sections, in order to give the reader a better insight in the meaning and magnitude of the many parameters relevant to dry etching. Electrical engineering concepts are emphasized to explain the pros and cons of reactor concepts and excitation frequency ranges. In the description of practical applications, extensive use is made of cross-referencing between processes and materials, as well as theory and practice. It is thus intended to provide a total model for understanding dry etching. The book has been written such that no previous knowledge of the subject is required. It is intended as a review of all aspects of dry etching for silicon semiconductor processing.
Download or read book Dry Etching Technology for Semiconductors written by Kazuo Nojiri and published by Springer. This book was released on 2014-10-25 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits. The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes. The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning etc.
Download or read book Plasma Processing for VLSI written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics: Microstructure Science, Volume 8: Plasma Processing for VLSI (Very Large Scale Integration) discusses the utilization of plasmas for general semiconductor processing. It also includes expositions on advanced deposition of materials for metallization, lithographic methods that use plasmas as exposure sources and for multiple resist patterning, and device structures made possible by anisotropic etching. This volume is divided into four sections. It begins with the history of plasma processing, a discussion of some of the early developments and trends for VLSI. The second section, Deposition, discusses deposition techniques for VLSI such as sputtering metals for metallization and contacts, plasma-enhanced chemical vapor deposition of metals and suicides, and plasma enhanced chemical vapor deposition of dielectrics. The part on Lithography presents the high-resolution trilayer resist system, pulsed x-ray sources for submicrometer x-ray lithography, and high-intensity deep-UV sources. The last part, Etching, provides methods in etching, like ion-beam etching using reactive gases, low-pressure reactive ion etching, and the uses of inert-gas ion milling. The theory and mechanisms of plasma etching are described and a number of new device structures made possible by anisotropic etching are enumerated as well. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.
