Download or read book Three Stage K band Low Noise Amplifier Operating at 16 GHz written by Prashanth Hara and published by . This book was released on 2017 with total page 56 pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT THREE-STAGE LOW NOISE AMPLIFIER at 16GHz By Prashanth Hara Master of Science in Electrical Engineering The purpose of this project is to design a three stage LNA in which all the stages are identical in nature. The transistor used for the design is MGF 4937 - AM operating at a frequency of 16GHz with the goal of achieving a total gain over 30dB and a noise figure less than 2dB. The basic steps involved in the design are: 1) Choosing the appropriate transistor, 2) Conduting the stability test of the transistor, 3) Calculating the gain and noise figure of the amplifier and 4) Designing the input matching network , output matching network and the M-prime network. First the smith chart is used for developing the design and then the design is verified using Microwave Office. The hand calculations are also verified using Matlab and RF/MW design software. The final three-stage low noise amplifier design was simulated using Microwave Office software obtaining a gain of 33dB and a noise figure of 1.6dB.

Download or read book Three Stage K band Low Noise Amplifier Operating at 20 GHz written by Brijesh Patel and published by . This book was released on 2017 with total page 58 pages. Available in PDF, EPUB and Kindle. Book excerpt: Three Stage K-band low noise amplifier which is operating at a frequency of 20GHz. The specifications of this amplifier include gain that is greater than or equal to 40dB and a noise figure of less than 1dB. The transistor used for this project is MGF4964BL which is manufactured by Mitsubishi Electric. It is a super low noise GaAs HEMT (High Electron Mobility Transistor) transistor. It provides high gain and low noise figure for high frequency operations. The results are obtained using three different ways, namely, hand calculations, MATLAB and AWR (Microwave Office) simulation. Also, the values derived by hand calculations and MATLAB are verified using the Microsoft RF/MW Software, designed by Dr. Radmanesh. The Amplifier is designed using distributed elements for all three stages. All three stages of this amplifier are a low noise amplifier. It also includes an inter-stage matching network. Three stages provide the gain of 40.8dB and satisfies noise figure criteria too. The concept is using Low Noise Amplifier (LNA) for three stages is very simple. It makes calculations easy and when we add more LNA stages, it increases the gain by keeping noise figure less than 1dB. The schematic was designed by hand calculations whose values were verified twice. Once by using the Microsoft RF/MW Software and second time using MATLAB. The simulation was done after designing the inter-stage matching network on Microwave Office (AWR). First it was carried out for a single stage and then for all three stages together. The results were verified using graphs in AWR.

Download or read book Three Stage Ku Band Low Noise Amplifier at 16 GHz written by Soham Jagalpure and published by . This book was released on 2017 with total page 83 pages. Available in PDF, EPUB and Kindle. Book excerpt: In order to design an amplifier at a certain frequency, the gain and noise figure needs to be decided on the basis of the market research. After deciding these three values, a transistor was selected such that it helped to achieve these values. The formulas used in the design process determined the number of stages required to complete the design and to measure the performance of the amplifier. After reviewing more than fifty transistors, the transistor FHX13/14LG was decided for the design of Low Noise Amplifier in the Ku Band at 16 GHz. The design objective was to achieve 40 dB gain with a noise figure of less than 1dB at the specified frequency. After the preliminary calculations, it was concluded that there will be three stages based on the selected transistor. The finalization of each stage was a challenge because of the trade-off issues in gain and noise figure. In order to verify the results, National Instruments Microwave Office (student version) was used for simulation. It gave the simulation values which were very close to the hand calculations. This was also verified using MATLAB along-with an RF/MW E-Book Software* software developed by Dr. Matthew Radmanesh with his published book "Advanced RF & Microwave Circuit Design" for accuracy.

Download or read book Three Stage Low Noise Amplifier Operating at 21 GHz written by Priya A. Pathak and published by . This book was released on 2017 with total page 52 pages. Available in PDF, EPUB and Kindle. Book excerpt: The report has been written for a three stage Low Noise Amplifier whose operating frequency is 21 GHz. The aim of the project is to obtain a gain exceeding 30 dB as well as a noise figure minimum i.e. below 2 dB. For obtaining these results, the transistor chosen is MGF4941CL that has been produced by Mitsubishi Electric. This transistor is pretty well-known for its properties for operating at high frequencies yielding low noise. The project consists of 3 identical stages, all of them to be LNA. After the designing part of the project all of the hand calculated values were verified with the help of Matlab and AWR Microwave Office Software. On simulation the software yields the noise and gain plots, which give the desired results for the gain to be more than 30 dB and the noise figure to be less than 2 dB for the single stage as well as the cascaded 3 stage amplifier.

Download or read book Design of Three Stage Ku Band Low Noise Amplifier Operating at 15Ghz written by Praveen D'souza and published by . This book was released on 2019 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt: Design of Three stage Ku band Low Noise Amplifier operating at 15 GHz By Praveen D'souza Master of Science in Electrical Engineering The main aim of this project is to simulate and design a three stage Ku band Low Noise Amplifier to find the gain and noise figure at 15GHz. In order to fulfil this requirement of high gain and low noise, a transistor MGF4965BM is chosen. This transistor belongs to Mitsubishi Electric Corporation and is basically a very low noise GaAs HEMT. It is desired to get a gain of more than 30dB with a low noise figure lower than 2dB. Microstrip lines are used to design the input and output matching networks to get the desired gain with low noise figure. The amplifier design must be a multistage design, i.e. it has more than single transistor. All the results were verified using hand calculations, MATLAB and RF and Microwave software. The three stage LNA design and simulation was done using Microwave AWR Office Software. Operating Frequency15GHz Total Gain> 30dB Total Noise Figure

Download or read book Handbook for III V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Download or read book The Design of a 10 Ghz Three Stage Low Noise Amplifier written by Salman-ul Mohammed Haque and published by . This book was released on 2005 with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Japanese Science and Technology 1983 1984 written by United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch and published by . This book was released on 1985 with total page 1080 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Two stage Ku band Low Noise Amplifier Operating at 18 GHz written by Aditya Y. Vadalkar and published by . This book was released on 2016 with total page 61 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report is about the design of a Ku-band two-stage low noise amplifier working at an operating frequency of 18 GHz. The specification of this low noise amplifier includes a gain, which is greater than 25dB and a low noise figure less than 1dB. The transistor used to design is ATF-36077 manufactured by Hewlett-Packard which is an ultra-low noise transistor providing a high and stable gain at the required frequency along with a low noise figure. The results obtained after running the simulations concluded that the two-stage low noise amplifier satisfactorily provided a power gain of about 24.7 dB and a low noise figure of about 0.68dB. As a result, cascading the two-stages consisting first stage as a minimum noise amplifier (MNA) and second stage as a maximum gain amplifier (MGA) helped us to achieve the specified requirements. The minimum noise amplifier stage helped us to reduce the noise at the input while the maximum gain amplifier stage helped us increase the gain. The matching networks at input and output terminals helped in achieving gain stability at the output. The schematic was implemented using the Agilent's Advanced Design System (ADS) software. The circuit simulation was carried out in the same software and the results were verified. The results were also verified using the hand calculations and MATLAB software. At the end, the final layout was designed and sketched.

Download or read book ONR Far East Scientific Bulletin written by and published by . This book was released on with total page 688 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book VLSI Technology and Design written by Otto G. Folberth and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1984 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Three Stage Low Noise Amplifier at 6GHz Frequency written by Swapna Raavi and published by . This book was released on 2015 with total page 47 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low Noise Amplifiers are the main components at the receiving end of nearly every communication system. The primary purpose of an LNA is to amplify the input signal while adding minimum noise as little as possible. This project consist of a 6 GHz three stage Low noise amplifier. NEC and CAS are used to create and simulate the design. Microwave office is used to design and simulate the final configuration. The LNA is designed to produce a 35dB gain and an overall noise figure of 2dB at 6GHz frequency. However, the actual design provides an overall gain of 50dB and a noise figure of 1.04dB. The LNA designed meets and exceeds our design requirements. Advancements in the technology and the end user requirement has also influenced in pushing these limits to a new level. This project gives a good base and hands on experience with the industrial standard tools. It also provides an overview of types of amplifiers, detailed design steps and types of matching techniques.

Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2304 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ubiquitous Communications and Network Computing written by Navin Kumar and published by Springer. This book was released on 2019-05-15 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book constitutes the refereed proceedings of the Second International Conference on Ubiquitous Communications and Network Computing, UBICNET 2019, held in Bangalore, India, in February 2019. The 19 full papers were selected from 52 submissions and are basically arranged in different sessions on security and energy efficient computing, software defined networks, cloud computing and internet of things applications, and the advanced communication systems and networks.

Download or read book Compound Semiconductor Integrated Circuits written by Tho T. Vu and published by World Scientific. This book was released on 2003-01-01 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. The book also includes three papers focused on radiation effects and reliability in III-V semiconductor electronics, which are useful for reference and future directions. Moreover, reliability is covered in several papers separately for certain process technologies. Contents: Present and Future of High-Speed Compound Semiconductor IC''s (T Otsuji); The Transforming MMIC (E J Martinez); Distributed Amplifier for Fiber-Optic Communication Systems (H Shigematsu et al.); Microwave GaN-Based Power Transistors on Large-Scale Silicon Wafers (S Manohar et al.); Radiation Effects in High Speed III-V Integrated Circuits (T R Weatherford); Radiation Effects in III-V Semiconductor Electronics (B D Weaver et al.); Reliability and Radiation Hardness of Compound Semiconductors (S A Kayali & A H Johnston); and other papers. Readership: Engineers, scientists and graduate students working on high speed electronics and systems, and in the area of compound semiconductor integrated circuits.

Download or read book Millimeter wave Integrated Technologies in the Era of the Fourth Industrial Revolution written by Wynand Lambrechts and published by Springer Nature. This book was released on 2020-06-20 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: This peer-reviewed book explores the technologies driving broadband internet connectivity in the fourth industrial revolution (Industry 4.0). It particularly focuses on potential solutions to introduce these technologies in emerging markets and rural areas, regions that typically form part of the digital divide and often have under-developed telecommunications infrastructures, a lack of skilled workers, and geographical restrictions that limit broadband connectivity. Research shows that ubiquitous internet access boosts socio-economic growth through innovations in science and technology, with the common goal of bringing positive change to the lives of individuals. Fifth-generation (5G) networks based on millimeter-wave (mm-wave) frequency information transfer have the potential to provide future-proof, affordable and sustainable broadband connectivity in areas where previous-generation mobile networks were unable to do so. This book discusses the principles of various technologies that enable electronic circuits to operate at mm-wave frequencies. It examines the importance of identifying, describing, and analyzing technology from a purely technological standpoint, but also acknowledges and investigates the challenges and limitations of introducing such technologies in emerging markets. Presenting recent research, the book spearheads participation in Industry 4.0 in these areas.

Download or read book Microelectronic Devices Circuits and Systems written by V. Arunachalam and published by Springer Nature. This book was released on 2021-08-02 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book constitutes selected papers from the Second International Conference on Microelectronic Devices, Circuits and Systems, ICMDCS 2021, held in Vellore, India, in February 2021. The 32 full papers and 6 short papers presented were thoroughly reviewed and selected from 103 submissions. They are organized in the topical sections on ​digital design for signal, image and video processing; VLSI testing and verification; emerging technologies and IoT; nano-scale modelling and process technology device; analog and mixed signal design; communication technologies and circuits; technology and modelling for micro electronic devices; electronics for green technology.