Download or read book Three Dimensional Transport and Kinetic Modeling of Horizontal Chemical Vapor Deposition Reactors written by Erik Oddmund Einset and published by . This book was released on 1991 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Three Dimensional Transport Phenomena in Chemical Vapor Deposition Reactors written by Fariborz Gharahi Ghahi and published by . This book was released on 1996 with total page 428 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Two and Three dimensional Finite Element Simulations of Reacting Flows in Chemical Vapor Deposition of Compound Semiconductors written by Dimitrios Ioannou Fotiadis and published by . This book was released on 1990 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Design Construction and Three Dimensional Modeling of a High Pressure Organometallic Chemical Vapor Deposition Reactor written by Sonya Denise McCall and published by . This book was released on 2001 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Symposium Om Process Control Diagnostics and Modeling in Semiconductor Manufacturing written by M. Meyyappan and published by The Electrochemical Society. This book was released on 1995 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Numerical Modeling of Chemical Vapor Deposition Processes in Horizontal Reactors written by Harry Keith Moffat and published by . This book was released on 1992 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book CVD XI written by Karl E. Spear and published by . This book was released on 1990 with total page 762 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Massively Parallel Computation of 3D Flow and Reactions in Chemical Vapor Deposition Reactors written by and published by . This book was released on 1997 with total page 33 pages. Available in PDF, EPUB and Kindle. Book excerpt: Computer modeling of Chemical Vapor Deposition (CVD) reactors can greatly aid in the understanding, design, and optimization of these complex systems. Modeling is particularly attractive in these systems since the costs of experimentally evaluating many design alternatives can be prohibitively expensive, time consuming, and even dangerous, when working with toxic chemicals like Arsine (AsH3): until now, predictive modeling has not been possible for most systems since the behavior is three-dimensional and governed by complex reaction mechanisms. In addition, CVD reactors often exhibit large thermal gradients, large changes in physical properties over regions of the domain, and significant thermal diffusion for gas mixtures with widely varying molecular weights. As a result, significant simplifications in the models have been made which erode the accuracy of the models' predictions. In this paper, the authors will demonstrate how the vast computational resources of massively parallel computers can be exploited to make possible the analysis of models that include coupled fluid flow and detailed chemistry in three-dimensional domains. For the most part, models have either simplified the reaction mechanisms and concentrated on the fluid flow, or have simplified the fluid flow and concentrated on rigorous reactions. An important CVD research thrust has been in detailed modeling of fluid flow and heat transfer in the reactor vessel, treating transport and reaction of chemical species either very simply or as a totally decoupled problem. Using the analogy between heat transfer and mass transfer, and the fact that deposition is often diffusion limited, much can be learned from these calculations; however, the effects of thermal diffusion, the change in physical properties with composition, and the incorporation of surface reaction mechanisms are not included in this model, nor can transitions to three-dimensional flows be detected.
Download or read book Modelling and Simulation of a Multi Component Transport for a Chemical Reactor Based on CVD Processes written by Juergen Geiser and published by . This book was released on 2009 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: We discuss mesoscopic models, which reflect the transport and reaction of the gaseous species through a homogeneous media in the chamber. The models include the conservation of mass and the porous media are in accordance with Darcy's law. The transport through the stationary and nonionised plasma field is treated as a diffusion-dominated flow, [60], where the metallic deposit and the gas chamber look like porous media. Based on these assumptions, we taken into account our expertise of modelling transport-reaction problems in groundwater. While solving such problems, so-called multi-scale processes and multi-physical processes arise. Conventional treatment of black-box discretisation and solver methods are impossible or complicated. We contribute physically motivated methods, with respect to decomposing processes for simpler-coupled ones. The idea of integrating one-dimensional analytical solutions of simpler equation systems and additionally iterative solver methods to couple the simpler equations leads to so-called iterative operator-splitting methods. We present so-called decomposition methods, which decouple the different scales and solve the equations based on scales with each other. Therefore, the previous coupling errors between the terms of the equations can be controlled and minimised with our iterative methods. Furthermore, additional domain decomposition are used to decouple the complicate domains, and non-linear problems are linearised with relaxation schemes. Our flexible iterative operator-splitting method is analysed for time, space, and non-linear model equations. Because of reducing the tremendous splitting error with more iteration steps, the method is competitive for multi-scale and multi-physical problems.
Download or read book Proceedings of the Thirteenth International Conference on Chemical Vapor Deposition written by Theodore M. Besmann and published by The Electrochemical Society. This book was released on 1996 with total page 922 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Two and Three dimensional Finite Element Simulations of Reacting Flows in Chemical Vapor Deposition of Compound Semiconductors written by Dimitrios Ioannou Fotiadis and published by . This book was released on 1990 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Transport in Chemical Vapor Deposition Reactors written by and published by . This book was released on 1994 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: The chemical vapor deposition (CVD) process that consists of depositing coatings of silicon nitride from silicon tetrafluoride and ammonia at low-pressure is modeled in a reactor simulation. Combined effects of surface chemical kinetics, multicomponent diffusion, convection, thermal diffusion, species interdiffusion, and variable properties are included in a reactor model. Full multicomponent diffusion is included by solving the StefanMaxwell equations. Species interdiffusion and thermal diffusion are included in the energy and species conservation equations. Results are for five gas phase species with two surface reactions specified for the deposition. Distributions of radial and axial components of velocity, species, temperature, and deposition rate and deposition profile are obtained in a tube reactor. Effects of the combined transport mechanisms noted above are determined. The decomposition of NH3 into N2 and H22 retards deposition of silicon nitride and dilutes the incoming reactants. This dilution is strongly enhanced by thermal diffusion since the direction of the temperature gradient causes the light species generated by the surface reactions to remain near the surface resulting in smaller and nonmonotonic deposition rates. The effects of a ramp in the surface temperature on the deposition rate and profile and on the transport processes are also determined.
Download or read book Chemical Vapor Deposition written by Electrochemical Society. High Temperature Materials Division and published by The Electrochemical Society. This book was released on 1997 with total page 1686 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Computational Modeling in Semiconductor Processing written by M. Meyyappan and published by Artech House Publishers. This book was released on 1995 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides you with in-depth coverage of the models, governing equations, and numerical techniques suitable for process simulation -- so you can give your designs the competitive edge. You will understand the basic principles of transport phenomena, gas phase, and surface reactions in electronics material processing, and learn practical numerical techniques used in process simulations.
Download or read book Handbook of Metallurgical Process Design written by George E. Totten and published by CRC Press. This book was released on 2004-05-25 with total page 992 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reviewing an extensive array of procedures in hot and cold forming, casting, heat treatment, machining, and surface engineering of steel and aluminum, this comprehensive reference explores a vast range of processes relating to metallurgical component design-enhancing the production and the properties of engineered components while reducing manufacturing costs. It surveys the role of computer simulation in alloy design and its impact on material structure and mechanical properties such as fatigue and wear. It also discusses alloy design for various materials, including steel, iron, aluminum, magnesium, titanium, super alloy compositions and copper.
Download or read book American Doctoral Dissertations written by and published by . This book was released on 2002 with total page 776 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modelling of Transport Processes in Chemical Vapor Deposition Reactors written by Sanjay Patnaik and published by . This book was released on 1989 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt:
