Download or read book Thin Film Growth by Combinatorial Epitaxy for Electronic and Energy Applications written by Deepak Kumar and published by . This book was released on 2019 with total page 155 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transition-metal oxides with an ABO3 perovskite structure exhibit strongly entangled structural and electronic degrees of freedom and thus, one expects to unveil exotic phases and properties by acting on the lattice through various external stimuli. The epitaxial strain engineering in oxide thin films is an important mean to tailor the crystal lattice distortion through cooperative Jahn Teller effect. Using the Jahn Teller active PrVO3 thin films as a model system, the structural correlation with the magnetism is established. We impose different strength of epitaxial strain in PrVO3 thin films via different means, such as, using various commercially available single crystal substrates, film thickness, substrates with different crystal surface orientations, etcetera. As a result, new and hidden phases that are absent in the bulk compound, begin to appear. Namely, the compressive strain in PrVO3 films enhances the super-exchange interaction leading to an increased antiferromagnetic Neel temperature, a strong magnetic anisotropy in PrVO3 thin films grown on (001)-, (110)- and (111)-oriented SrTiO3 substrates, are few examples.

Download or read book Thin Film Growth written by Zexian Cao and published by Elsevier. This book was released on 2011-07-18 with total page 433 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin film technology is used in many applications such as microelectronics, optics, hard and corrosion resistant coatings and micromechanics, and thin films form a uniquely versatile material base for the development of novel technologies within these industries. Thin film growth provides an important and up-to-date review of the theory and deposition techniques used in the formation of thin films. Part one focuses on the theory of thin film growth, with chapters covering nucleation and growth processes in thin films, phase-field modelling of thin film growth and surface roughness evolution. Part two covers some of the techniques used for thin film growth, including oblique angle deposition, reactive magnetron sputtering and epitaxial growth of graphene films on single crystal metal surfaces. This section also includes chapters on the properties of thin films, covering topics such as substrate plasticity and buckling of thin films, polarity control, nanostructure growth dynamics and network behaviour in thin films. With its distinguished editor and international team of contributors, Thin film growth is an essential reference for engineers in electronics, energy materials and mechanical engineering, as well as those with an academic research interest in the topic. Provides an important and up-to-date review of the theory and deposition techniques used in the formation of thin films Focusses on the theory and modelling of thin film growth, techniques and mechanisms used for thin film growth and properties of thin films An essential reference for engineers in electronics, energy materials and mechanical engineering

Download or read book Combinatorial Materials Synthesis written by Xiao-Dong Xiang and published by CRC Press. This book was released on 2003-08-19 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt: Pioneered by the pharmaceutical industry and adapted for the purposes of materials science and engineering, the combinatorial method is now widely considered a watershed in the accelerated discovery, development, and optimization of new materials. Combinatorial Materials Synthesis reveals the gears behind combinatorial materials chemistry and thin-film technology, and discusses the prime techniques involved in synthesis and property determination for experimentation with a variety of materials. Funneling historic innovations into one source, the book explores core approaches to synthesis and rapid characterization techniques for work with combinatorial materials libraries.

Download or read book Epitaxial Growth Part A written by J Matthews and published by Elsevier. This book was released on 2012-12-02 with total page 401 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial Growth, Part A is a compilation of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The collection contains topics on the historical development of epitaxy, the nucleation of thin films, the structure of the interface between film and substrate, and the generation of defects during film growth. The text also provides descriptions of the methods used to prepare and examine thin films and a list of the overgrowth-substrate combinations studied. Mineralogists, materials engineers and scientists, and physicists will find this book a great source of insight.

Download or read book Thin Film Physics And Devices Fundamental Mechanism Materials And Applications For Thin Films written by Jianguo Zhu and published by World Scientific. This book was released on 2021-06-18 with total page 706 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin films have an extremely broad range of applications from electronics and optics to new materials and devices. Collaborative and multidisciplinary efforts from physicists, materials scientists, engineers and others have established and advanced a field with key pillars constituting (i) the synthesis and processing of thin films, (ii) the understanding of physical properties in relation to the nanometer scale, (iii) the design and fabrication of nano-devices or devices with thin film materials as building blocks, and (iv) the design and construction of novel tools for characterization of thin films.Against the backdrop of the increasingly interdisciplinary field, this book sets off to inform the basics of thin film physics and thin film devices. Readers are systematically introduced to the synthesis, processing and application of thin films; they will also study the formation of thin films, their structure and defects, and their various properties — mechanical, electrical, semiconducting, magnetic, and superconducting. With a primary focus on inorganic thin film materials, the book also ventures on organic materials such as self-assembled monolayers and Langmuir-Blodgett films.This book will be effective as a teaching or reference material in the various disciplines, ranging from Materials Science and Engineering, Electronic Science and Engineering, Electronic Materials and Components, Semiconductor Physics and Devices, to Applied Physics and more. The original Chinese publication has been instrumental in this purpose across many Chinese universities and colleges.

Download or read book Thin Films on Silicon written by Vijay Narayanan and published by . This book was released on 2016 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This volume provides a broad overview of the fundamental materials science of thin films that use silicon as an active substrate or passive template, with an emphasis on opportunities and challenges for practical applications in electronics and photonics. It covers three materials classes on silicon: Semiconductors such as undoped and doped Si and SiGe, SiC, GaN, and III-V arsenides and phosphides; dielectrics including silicon nitride and high-k, low-k, and electro-optically active oxides; and metals, in particular silicide alloys. The impact of film growth and integration on physical, electrical, and optical properties, and ultimately device performance, is highlighted."--Publisher's website.

Download or read book Thin Film Structures in Energy Applications written by Suresh Babu Krishna Moorthy and published by Springer. This book was released on 2015-03-10 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive overview of thin film structures in energy applications. Each chapter contains both fundamentals principles for each thin film structure as well as the relevant energy application technologies. The authors cover thin films for a variety of energy sectors including inorganic and organic solar cells, DSSCs, solid oxide fuel cells, thermoelectrics, phosphors and cutting tools.

Download or read book Epitaxy written by Marian A. Herman and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 530 pages. Available in PDF, EPUB and Kindle. Book excerpt: In a uniform and comprehensive manner the authors describe all the important aspects of the epitaxial growth processes of solid films on crystalline substrates, e.g. processes in which atoms of the growing film mimic the arrangement of the atoms of the substrate. Emphasis is put on sufficiently fundamental and unequivocal presentation of the subject in the form of an easy-to-read review. A large part of this book focuses on the problems of heteroepitaxy. The most important epitaxial growth techniques which are currently widely used in basic research as well as in manufacturing processes of devices are presented and discussed in detail.

Download or read book Morphological Organization In Epitaxial Growth And Removal written by Max G Lagally and published by World Scientific. This book was released on 1999-01-29 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a critical assessment of the current status and the likely future directions of thin-film growth, an area of exceptional technological importance. Its emphasis is on descriptions of the atomic-scale mechanisms controlling the dynamics and thermodynamics of the morphological evolution of the growth front of thin films in diverse systems of fundamental and technological significance. The book covers most of the original and important conceptual developments made in the 1990s. The articles, written by leading experts, are arranged in five major categories — the theoretical basis, semiconductor-on-semiconductor growth, metal-on-metal growth, metal-on-semiconductor growth, and removal as the inverse process of growth. This book, the only one of its kind in this decade, will prove to be an indispensable reference source for active researchers, those having peripheral interest, and graduate students starting out in the field.

Download or read book Proceedings of the International Workshop on Physics and Technology of Thin Films written by Alireza Zaker Moshfegh and published by World Scientific. This book was released on 2004-06-08 with total page 549 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin films science and technology plays an important role in the high-tech industries. Thin film technology has been developed primarily for the need of the integrated circuit industry. The demand for development of smaller and smaller devices with higher speed especially in new generation of integrated circuits requires advanced materials and new processing techniques suitable for future giga scale integration (GSI) technology. In this regard, physics and technology of thin films can play an important role to acheive this goal. The production of thin films for device purposes has been developed over the past 40 years. Thin films as a two dimensional system are of great importance to many real-world problems. Their material costs are very small as compared to the corresponding bulk material and they perform the same function when it comes to surface processes. Thus, knowledge and determination of the nature, functions and new properties of thin films can be used for the development of new technologies for future applications. Thin film technology is based on three foundations: fabrication, characterization and applications. Some of the important applications of thin films are microelectronics, communication, optical electronics, catalysis, coating of all kinds, and energy generation and conservation strategies. This book emphasizes the importance of thin films and their properties for the new technologies. It presents basic principles, processes techniques and applications of thin films. As thin films physics and technology is a multidisciplinary field, the book will be useful to a wide varity of readers (especially young researcher) in physics, electronic engineering, material science and metallurgy. Contents: Deposition Processes; Characterization Techniques; Surface Processes; Nanomaterials; Optical Materials; Superconductivity; Magnetic Thin Films. Readership: Graduate students and researchers involved with the physics and technology of thin films.

Download or read book Handbook of Thin Film Deposition written by Krishna Seshan and published by William Andrew. This book was released on 2012-12-06 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Handbook of Thin Film Deposition is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry and the closely related areas of thin film deposition, thin film micro properties, photovoltaic solar energy applications, new materials for memory applications and methods for thin film optical processes. In a major restructuring, this edition of the handbook lays the foundations with an up-to-date treatment of lithography, contamination and yield management, and reliability of thin films. The established physical and chemical deposition processes and technologies are then covered, the last section of the book being devoted to more recent technological developments such as microelectromechanical systems, photovoltaic applications, digital cameras, CCD arrays, and optical thin films. A practical survey of thin film technologies aimed at engineers and managers involved in all stages of the process: design, fabrication, quality assurance and applications Covers core processes and applications in the semiconductor industry and new developments in the photovoltaic and optical thin film industries The new edition takes covers the transition taking place in the semiconductor world from Al/SiO2 to copper interconnects with low-k dielectrics Written by acknowledged industry experts from key companies in the semiconductor industry including Intel and IBM Foreword by Gordon E. Moore, co-founder of Intel and formulator of the renowned ‘Moore’s Law’ relating to the technology development cycle in the semiconductor industry

Download or read book Thin Film Growth Techniques for Low Dimensional Structures written by R.F.C. Farrow and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge.

Download or read book Surface Microscopy with Low Energy Electrons written by Ernst Bauer and published by Springer. This book was released on 2014-07-10 with total page 513 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book, written by a pioneer in surface physics and thin film research and the inventor of Low Energy Electron Microscopy (LEEM), Spin-Polarized Low Energy Electron Microscopy (SPLEEM) and Spectroscopic Photo Emission and Low Energy Electron Microscopy (SPELEEM), covers these and other techniques for the imaging of surfaces with low energy (slow) electrons. These techniques also include Photoemission Electron Microscopy (PEEM), X-ray Photoemission Electron Microscopy (XPEEM), and their combination with microdiffraction and microspectroscopy, all of which use cathode lenses and slow electrons. Of particular interest are the fundamentals and applications of LEEM, PEEM, and XPEEM because of their widespread use. Numerous illustrations illuminate the fundamental aspects of the electron optics, the experimental setup, and particularly the application results with these instruments. Surface Microscopy with Low Energy Electrons will give the reader a unified picture of the imaging, diffraction, and spectroscopy methods that are possible using low energy electron microscopes.

Download or read book Thin Films written by W. K. Liu and published by World Scientific. This book was released on 1999 with total page 708 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heteroepitaxial films are commonplace among today's electronic and photonic devices. The realization of new and better devices relies on the refinement of epitaxial techniques and improved understanding of the physics underlying epitaxial growth. This book provides an up-to-date report on a wide range of materials systems. The first half reviews metallic and dielectric thin films, including chapters on metals, rare earths, metal-oxide layers, fluorides, and high-c superconductors. The second half covers semiconductor systems, reviewing developments in group-IV, arsenide, phosphide, antimonide, nitride, II-VI and IV-VI heteroepitaxy. Topics important to several systems are covered in chapters on atomic processes, ordering and growth dynamics.

Download or read book Thin Films and Heterostructures for Oxide Electronics written by Satishchandra B. Ogale and published by Springer Science & Business Media. This book was released on 2005-07-15 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: Oxides form a broad subject area of research and technology development which encompasses different disciplines such as materials science, solid state chemistry, physics etc. The aim of this book is to demonstrate the interplay of these fields and to provide an introduction to the techniques and methodologies involving film growth, characterization and device processing. The literature in this field is thus fairly scattered in different research journals covering one or the other aspect of the specific activity. This situation calls for a book that will consolidate this information and thus enable a beginner as well as an expert to get an overall perspective of the field, its foundations, and its projected progress.

Download or read book Molecular Beam Epitaxy Growth and Characerization of ZnO based layers and Heterostructures written by Abdelhamid Abdelrehim Mahmoud Elshaer and published by Cuvillier Verlag. This book was released on 2008-08-21 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt: In semiconductor research a reliable epitaxial growth technique for growing high quality thin films and heterostructures is necessary. In the case of ZnO one of the main difficulties is the absence of suitable substrate material for ZnO epitaxial growth. Although special oxide material (for example ScAlMgO4) and ZnO bulk crystal can serve as lattice matched substrates, the quality of the substrates themselves, the size of the available wafer, and the expense do not encourage to use these lattice matched substrates for ZnO epitaxial growth. In the current research, a widely used low cost commercial substrate sapphire was employed to develop a reliable epitaxial growth technique and growth process for ZnO. The versatile epitaxial growth technique, molecular beam epitaxy (MBE) equipped with a rf-plasma source was developed for growth and various characterizations methods were conducted to obtain a fundamental understanding in both the epitaxial processes and material properties of ZnO thin films and heterostructures. Employing a thin HT MgO buffer layer prior to ZnO growth is the key to overcome the very large mismatches between c-Al2O3 substrate. Wetting the surface of Al2O3 substrate with a few MgO monolayers, lowed the surface energy, so that the lateral growth of ZnO is promoted at the initial growth stage. MgO can be grown in the same chamber as ZnO without any contamination problem. These advantages make the growth procedure of a HT MgO buffer fast and easy. The growth temperature and the growth rate of MgO buffer are found to be important to improve the ZnO heteroepitaxy. An intermediate spinel layer in epitaxial relation with the sapphire substrate as well as with the HT MgO buffer layer is formed in the early stage of growth during the deposition of the MgO at 700°C. It was found that the combination of these two layers is useful for the progressive reduction of the ZnO overgrown with the sapphire substrate.Annealing experiments reveal that as soon as the spinel layer is formed at about 700°C, it remains stable at least up to 1000°C, and even it is extended in thickness. By recording and analyzing RHEED intensity oscillations, the growth kinetics has been investigated. Flat surface morphology and layer-by-layer growth has been achieved. The stoichiometry has been deduced by analyzing the growth rate as a function of Zn and O fluxes for various growth temperatures. It is found that the sticking coefficient of oxygen radicals is less dependent on the substrate temperature than that of Zn. The stoichiometric condition shifts to larger Zn flux at higher growth temperature. The kink rZnO values determine the activated O-flux supplied by the RF plasma source at TS=500°C, 400W and a given O2-flow rate. It equals 0.5±0.05 Ås-1 per sccm. Absolute αZn values versus TS, defined as αZn=rZnO(T)/rZnO(max), where rZnO(max) is recalculated from the Zn flux measured by a quartz monitor, using Zn/ZnO molar mass and density ratios. Ex-situ characterization of the grown ZnO layers indicate that the surface morphology and crystal quality of the ZnO films grown on sapphire by MBE using either oxygen plasma cell or H2O2 as an oxidant can be extensively improved by using an HT MgO buffer. ZnO layers reveal strong variation of surface morphology versus the O/Zn flux ratio. The most flat surface morphology of ZnO is obtained when the ratio is within the 0.7-1 range. The growth under O-rich conditions leads to formation of hexagonal pyramids and at higher O/Zn ratios to a 3D growth with the top layer formed by perfectly c-oriented columnar structures of 50-100 nm in a diameter. It was also possible to recover the initial 3D growth mode to the 2D one by employing the Zn-rich growth conditions at O/Zn=0.4-0.6. Structural characterizations by high resolution X-ray diffraction (HR-XRD) and transmission electron microscopy (TEM) indicate a dramatic reduction in defect density in the ZnO epilayers grown with an HT MgO buffer. By using TEM, it was found that the dominant extending defects are edge, screw and mixed-type dislocations along c-axis. The main defects were threading dislocations. This is resulted from the well controlled layer-by-layer growth, since only the edge-type dislocation is able to accommodate the lattice mismatch, while the screw type dislocation forms much related to the initial nucleation environment.The microstructure of ZnO epilayers has been studied by HR-XRD. The full width at half maximum of the (0002) reflection, 0.007 degree, is much smaller than that of the (10-10) reflection, 0.27 degree revealing the micro-twist dominates the mosaicity, while micro-tilt is much less important.This pronounced difference of the rocking curve widths between the (0002) and (1010) reflections strongly indicates that the density of pure edge threading dislocations is greater than that of pure screw dislocations. Optical characterizations reveal that exciton plays an important role in ZnO. At room temperature free exciton recombinations dominate the photoluminescence. The ZnO epilayers reveal well resolved low temperature PL excitonic spectra with a dominant bound exciton line (3.355 eV) possessing a ~2 meV half-width and a peak of free A exciton at 3.374 eV. The low-energy tail extending from the excitonic emission peaks due to the lattice deformation is significantly reduced, which allows the observation of two electron satellites and LO-phonons replicas of free and bound excitons. Variation of growth stoichiometry from O-rich to Zn-rich results in the pronounced quench of the acceptor-bound part of the excitonic band, as well as the strong intensity redistribution of donor-bound lines which seems to be attributed to a change in the point defect density. Temperature dependence of PL spectra between 6K and room temperature every 30 K under the same excitation conditions was performed. Slowly decreases coming at 300K to about one third of the intensity at 6K. This corresponds to the activation of non-radiative channels in the capturing and recombination processes. This result was confirm by decay time measurements. PL mapping of 2 inch ZnO epilayer shows high lateral homogeneity from PL intensity distribution and PL FWHM distribution. Hall-effect measurements and Electrochemical profiling (ECV) were used to characterize the electrical properties of ZnO samples. Hall-effect measurements indicated n-type behavior with carrier concentration of 2.0x1016 cm-3 and mobility of approximately 96 cm2/Vs. ECV profile versus depth measured for the top 2.5 μm thick sample gives surface carrier concentration is 2.0x1016 cm-3 increasing to a maximum value of 1.0x1018 cm-3 the semiconductor/substrate interface. P-n heterojuntions and mesa structures comprising MBE n-ZnO layers and CVD p-4H-SiC laser were manufactured and investigated. Electrical properties of the mesa diodes have been studied with Hall measurements, and current-voltage measurements (I-V). I-V measurements of the device show good rectifying behavior, from which a turn-on voltage of about 2 V was obtained. With the excitation of O and N gas mixture in a single plasma cell, followed by the sample annealing procedure. P-type ZnO:N layers with a net hole concentration 3x1017 cm-3 using was measured. The combination of low growth temperature, slightly O-rich conditions and post-growth annealing is shown to be effective way to obtain p-doping. Further efforts are necessary to improve structural quality of the low-temperature p-type ZnO:N films. Optical properties of ZnO based II-VI heterostructures and quantum structures have also been studied. The surface roughness of ZnxMg1−xO was as low as 0.7 nm. The optical band gap and photoluminescence peak can be turned to larger energy with the same high crystallinity and without significant change in the lattice constant. The prominent PL peaks related to the SQW show a systematic blueshift with decreasing well width, which is consistent with the quantum size effect. The SQW-related emission peaks exhibit an S-shaped (redshift-blueshiftredshift) behaviour with increasing temperature, which is in contrast with that ascribed to band gap shrinkage (redshift). The observed behavior is discussed in terms of localization at lateral interface potential fluctuations. For T >70 K the integrated PL intensity is thermally activated with activation energies much less than the band offsets. It is argued that the dominant mechanism leading to the quenching of the ZnO SQW-related PL is due to the thermionic emission of excitons out of the lateral potential minima caused by potential fluctuations, such as interface fluctuations by 1 ML. Stimulated emission has been achieved at room temperature in a separate confinement double heterostructure having a 3 nm wide SQW as an active region. It has been found that a critical parameter for the lasing is the inhomogeneous broadening of both QW and barrier emission bands. MBE process for ZnO has been developed where high quality ZnO epilayers and heterostructures can be grown by molecular beam epitaxy on sapphire substrate. For nitrogen doping of ZnO, Oxygen and nitrogen were activated in the single plasma cell. No reproducible and reliable experimental results on the achievement of p-type conductivity achieved. Stimulated emission has been achieved at room temperature.

Download or read book SiGe and Si Strained Layer Epitaxy for Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 373 pages. Available in PDF, EPUB and Kindle. Book excerpt: What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.