Download or read book Thermal Oxide Growth on Silicon Intrinsic Stress and Silicon Cleaning Effects written by E. A. Irene and published by . This book was released on 1987 with total page 37 pages. Available in PDF, EPUB and Kindle. Book excerpt: This paper summarizes the experimental results and discusses the implications of recent research on two topics related to Si oxidation: mechanical stress effects; and the influence of impurities on the Si surface. For stress measurement, a double beam optical technique is used to measure the strain in the Si substrate due to the film stress. An intrinsic SiO2 stress is measured which increases with decreasing oxidation temperature. Controversy exists about whether the intrinsic stress affects transport of oxidant or the interface reaction; arguments for both views are presented. A combination of in-situ ellipsometry and contact angle measurements performed on a Si surface which is immersed in various liquid media has been successfully used to determine the role of HF in Si cleaning process. A fluorocarbon film was found to replace the removed SiO2, and the fluorocarbon renders the Si surface hydrophobic and amenable to the growth of a high quality SiO2 film for device applications. Keywords: Silicon, Silicon oxides.

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A Measurement of the Effect of Intrinsic Film Stress on the Overall Rate of Thermal Oxidation of Silicon written by J. K. Srivastava and published by . This book was released on 1985 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, in our laboratory more extensive intrinsic stress measurements have been made and these measurements will be reported separately. So while the existence of a compressive intrinsic Si02 film stress has been experimentally verified, the experimental verification of the effects of the stress on oxidation kinetics remains a matter of speculation within the various models. Along with the development of an intrinsic film stress due to the molar volume change during the oxidation of Si, a Si02 film density increase occurs and has been measured. We consider the intrinsic stress and density increases to have a common origin in the nature of the Si oxidation process on a single crystal Si surface. The present communication provides a rather direct experimental measurement of the effect of the compressive intrinsic film stress and/or oxide density on the Si oxidation kinetics. All the Si wafers used were lightly P doped n-type (100) oriented commercially available high quality single crystal Si slices.

Download or read book A User s Guide to Ellipsometry written by Harland G. Tompkins and published by Academic Press. This book was released on 2012-12-02 with total page 279 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is specifically designed for the user who wishes expanded use of ellipsometry beyond the relatively limited number of turn-key applications. The book provides a concise discussion of theory and instrumentation before describing how to use optical parameters to determine material properties and optical parameters for inaccessible substrates and unknown films, and how to measure extremely thin films. The book also addresses polysilicon, a material commonly used in the microelectronics industry, and the effect of substrate roughness. This book's concepts and applications are reinforced through the 14 case studies that illustrate specific applications of ellipsometry from the semiconductor industry as well as studies involving corrosion and oxide growth. - Allows the user to optimize turn-key operation of ellipsometers and move beyond limited turn-key applications - Provides comprehensive discussion of the measurement of film thickness and optical constants in film - Discusses the trajectories of the ellipsometric parameters Del and Psi and how changes in the materials affect the parameter - Includes 14 case studies to reinforce specific applications - Includes three appendices for helpful references

Download or read book Government Reports Annual Index Keyword A L written by and published by . This book was released on 1988 with total page 1600 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Government Reports Annual Index written by and published by . This book was released on 1988 with total page 1590 pages. Available in PDF, EPUB and Kindle. Book excerpt: Sections 1-2. Keyword Index.--Section 3. Personal author index.--Section 4. Corporate author index.-- Section 5. Contract/grant number index, NTIS order/report number index 1-E.--Section 6. NTIS order/report number index F-Z.

Download or read book Dry Thermal Oxidation of Silicon Effects of Surface Cleaning and Annealing on Film Characteristics as Determined by Ellipsometry written by Catherine E. Davis and published by . This book was released on 1990 with total page 141 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 2003 with total page 1882 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fundamental Aspects of Ultrathin Dielectrics on Si based Devices written by Eric Garfunkel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

Download or read book Technical Reports Awareness Circular TRAC written by and published by . This book was released on 1988-04 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Semiconductor Silicon written by and published by . This book was released on 1986 with total page 1144 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Deposition and Growth Limits for Microelectronics AVS Series 4 written by Rubloff and published by American Institute of Physics. This book was released on 1988 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 543 pages. Available in PDF, EPUB and Kindle. Book excerpt: The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.

Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface 2 written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-09 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.

Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface 3 1996 written by Hisham Z. Massoud and published by . This book was released on 1996 with total page 804 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization in Silicon Processing written by Yale Strausser and published by Elsevier. This book was released on 2013-10-22 with total page 255 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is devoted to the consideration of the use use of surface, thin film and interface characterization tools in support of silicon-based semiconductor processing. The approach taken is to consider each of the types of films used in silicon devices individually in its own chapter and to discuss typical problems seen throughout that films' history, including characterization tools which are most effectively used to clarifying and solving those problems.

Download or read book Fundamental Aspects of Silicon Oxidation written by Yves J. Chabal and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discusses silicon oxidation in a tutorial fashion from both experimental and theoretical viewpoints. The authors report on the state of the art both at Lucent Technology and in academic research. The book will appeal to researchers and advanced students.