Download or read book Thermal Oxidation of Silicon in Dry Oxygen written by Hisham Z. Massoud and published by . This book was released on 1983 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Encyclopedia of Microfluidics and Nanofluidics written by Dongqing Li and published by Springer Science & Business Media. This book was released on 2008-08-06 with total page 2242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covering all aspects of transport phenomena on the nano- and micro-scale, this encyclopedia features over 750 entries in three alphabetically-arranged volumes including the most up-to-date research, insights, and applied techniques across all areas. Coverage includes electrical double-layers, optofluidics, DNC lab-on-a-chip, nanosensors, and more.
Download or read book The Physics and Technology of Amorphous SiO2 written by Roderick A.B. Devine and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: The contents of this volume represent most of the papers presented either orally or as posters at the international conference held in Les rd th Arcs, Savoie, from June 29 to July 3 1987. The declared objective of the conference was to bring together specialists working in various fields, both academic and applied, to examine the state of our under standing of the physics of amorphous sioz from the point of view of its structure, defects (both intrinsic and extrinsic), its ability to trans port current and to trap charges, its sensitivity to irradiation, etc. For this reason, the proceedings is divided, as was the conference schedule, into a number of sections starting from a rather academic viewpoint of the internal structure of idealized Si0 and progressing 2 towards subjects of increasing technological importance such as charge transport and trapping and breakdown in thin films. The proceedings terminates with a section on novel applications of amorphous SiOz and in particular, buried oxide layers formed by ion implantation. Although every effort was made at the conference to ensure that each presentation occured in its most obvious session, in editing the proceedings we have taken the liberty of changing the order where it seems that a paper was in fact more appropriate to an alternative section. In any event, because of the natural overlap of subjects, many papers could have been suitably placed in several different sections.
Download or read book Silicon Materials Science and Technology X written by Howard R. Huff and published by The Electrochemical Society. This book was released on 2006 with total page 599 pages. Available in PDF, EPUB and Kindle. Book excerpt: This was the tenth symposium of the International Symposium on Silcon Material Science and Technology, going back to 1969. This issue provides a unique historical record of the program and will aid in the understanding of silicon materials over the last 35 years.
Download or read book 20th International Conference on the Physics of Semiconductors written by E. M. Anastassakis and published by . This book was released on 1990 with total page 952 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gathering top experts in the field, the 20th ICPS proceedings reviews the progress in all aspects of semiconductor physics. The proceedings will include state-of-the-art lectures with special emphasis on exciting new developments. It should serve as excellent material for researchers in this and related fields.
Download or read book Rapid Thermal Oxidation and Nitridation of Silicon written by Mehrdad M. Moslehi and published by . This book was released on 1986 with total page 20 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rapid thermal processing of silicon in oxygen and ammonia reactive ambients was employed to grow thin layers of Silicon dixoide, silicon nitride and nitroxide for high-quality gate insulators of submicron CMOS VLSI. Rapid thermal oxidation of (100) silicon in dry oxygen exhibited a nonlinear growth in the short-time regime. The oxide-growth rate rises as the oxidation time is reduced, and the highest rate occurs for the shortest rapid oxidation time. The formation kinetics of the surface and interface nitrogen-rich layers in rapidly nitrided oxide dielectrics were analyzed and correlated to their electrical performance. Rapid thermal nitridation of approx. 100 A SiO2 on silicon results in a negative shift of flatband voltage, a slight rise in surface-state density, a higher low-field and a lower high field conductivity, an improvement in the dielectric breakdown field, modified trapping characteristics, and a slower generation rate of new surfce states by the high-field electrical stress.
Download or read book Physics and Technology of Silicon Carbide Devices written by George Gibbs and published by . This book was released on 2016-10-01 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.
Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface 2 written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-09 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
Download or read book Silicon Oxide Studies written by Charles Pang-Hsin Ho and published by . This book was released on 1978 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thermal Oxidation of 100 Silicon in Oxygen Mixed with Carbon Dioxide and Its Effect on MOS Parameters written by Vishnu K. Khemka and published by . This book was released on 1996 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Formation of Quarter micron Silicon on insulator Isolated Islands of Substrate silicon by Selective Lateral Oxidation written by Susanne Christine Arney and published by . This book was released on 1988 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Temperature Oxidation written by Francis P. Fehlner and published by Wiley-Interscience. This book was released on 1986-04-03 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt: An interdisciplinary study of the corrosion of metals that emphasizes the role of oxide structure in interpreting oxidation kinetics of metals and semiconductors. Covers low temperature oxidation, silicon oxidation, structure of vitreous oxides, transport processes in vitreous oxides, and oxide films. Index.
Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 543 pages. Available in PDF, EPUB and Kindle. Book excerpt: The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.
Download or read book The Surface Properties of Oxidized Silicon written by Else Kooi and published by Springer. This book was released on 2013-12-21 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Use of Nuclearmicroanalysis Part I Proton Activation Studies of the Thermal Oxidation of Silicon written by A. R. Cooper and published by . This book was released on 1978 with total page 183 pages. Available in PDF, EPUB and Kindle. Book excerpt: The mechanism of the thermal oxidation of silicon in 'dry' oxygen has been investigated using the direct observation of nuclear reactions. It has been found that the rate controlling process is the transport of molecular oxygen through the silica scale with exchange occurring between the permeating oxygen and the network oxygen. (Author).
Download or read book Fundamental Aspects of Silicon Oxidation written by Yves J. Chabal and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discusses silicon oxidation in a tutorial fashion from both experimental and theoretical viewpoints. The authors report on the state of the art both at Lucent Technology and in academic research. The book will appeal to researchers and advanced students.
Download or read book Environmental Barrier Coatings written by Kang N. Lee and published by MDPI. This book was released on 2020-12-29 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt: The global increase in air travel will require commercial vehicles to be more efficient than ever before. Advanced engine hot section materials are a key technology required to keep fuel consumption and emission to a minimum in next-generation gas turbines. Ceramic matrix composites (CMCs) are the most promising material to revolutionize gas turbine hot section materials technology because of their excellent high‐temperature properties. Rapid surface recession due to volatilization by water vapor is the Achilles heel of CMCs. Environmental barrier coatings (EBCs) is an enabling technology for CMCs, since it protects CMCs from water vapor. The first CMC component entered into service in 2016 in a commercial engine, and more CMC components are scheduled to follow within the next few years. One of the most difficult challenges to CMC components is EBC durability, because failure of EBC leads to a rapid reduction in CMC component life. Key contributors to EBC failure include recession, oxidation, degradation by calcium‐aluminum‐magnesium silicates (CMAS) deposits, thermal and thermo‐mechanical strains, particle erosion, and foreign object damage (FOD). Novel EBC chemistries, creative EBC designs, and robust processes are required to meet EBC durability challenges. Engine-relevant testing, characterization, and lifing methods need to be developed to improve EBC reliability. The aim of this Special Issue is to present recent advances in EBC technology to address these issues. In particular, topics of interest include but are not limited to the following: • Novel EBC chemistries and designs; • Processing including plasma spray, suspension plasma spray, solution precursor plasma spray, slurry process, PS-PVD, EB-PVD, and CVD; • Testing, characterization, and modeling; • Lifing.
