Download or read book Electronic and Optical Properties of Semiconductors written by Lok C. Lew Yan Voon and published by Universal-Publishers. This book was released on 1997-08 with total page 263 pages. Available in PDF, EPUB and Kindle. Book excerpt: This study is a theoretical investigation of the electronic and optical properties of intrinsic semiconductors using the orthogonal empirical tight binding model. An analysis of the bulk properties of semiconductors with the zincblende, diamond and rocksalt structures has been carried out. We have extended the work of others to higher order in the interaction integrals and derived new parameter sets for certain semiconductors which better fit the experimental data over the Brillouin zone. The Hamiltonian of the heterostructures is built up layer by layer from the parameters of the bulk constituents. The second part of this work examines a number of applications of the theory. We present a new microscopic derivation of the intervalley deformation potentials within the tight binding representation and computes a number of conduction-band deformation potentials of bulk semiconductors. We have also studied the electronic states in heterostructures and have shown theoretically the possibility of having barrier localization of above-barrier states in a multivalley heterostructure using a multiband calculation. Another result is the proposal for a new "type-II" lasing mechanism in short-period GaAs/AlAs superlattices. As for our work on the optical properties, a new formalism, based on the generalized Feynman-Hellmann theorem, for computing interband optical matrix elements has been obtained and has been used to compute the linear and second-order nonlinear optical properties of a number of bulk semiconductors and semiconductor heterostructures. In agreement with the one-band elective mass calculations of other groups, our more elaborate calculations show that the intersubband oscillator strengths of quantum wells can be greatly enhanced over the bulk interband values.

Download or read book Electronic States and Optical Transitions in Semiconductor Heterostructures written by Fedor T. Vasko and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: The theoretical basis and the relevant experimental knowledge underlying our present understanding of the electrical and optical properties of semiconductor heterostructures. Although such structures have been known since the 1940s, it was only in the 1980s that they moved to the forefront of research. The resulting structures have remarkable properties not shared by bulk materials. The text begins with a description of the electronic properties of various types of heterostructures, including discussions of complex band-structure effects, localised states, tunnelling phenomena, and excitonic states. The focus of the remainder of the book is on optical properties, including intraband absorption, luminescence and recombination, Raman scattering, subband optical transitions, nonlinear effects, and ultrafast optical phenomena. The concluding chapter presents an overview of some of the applications that make use of the physics discussed. Appendices provide background information on band structure theory, kinetic theory, electromagnetic modes, and Coulomb effects.

Download or read book Theory of the Electronic and Optical Properties of Semiconductor Heterostructures written by David A. Broido and published by . This book was released on 1989 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: The optical spectrum of quantum wells is characterized by a series of excitonic peaks corresponding roughly to transitions between valence and conduction subband pairs subject to appropriate selection rules. In a simple model where these subbands are taken to be parabolic, the exciton spectrum for each subband pair follows a hydrogen-like series, with each exciton characterized by a two dimensional (2D) angular momentum symmetry e.g. 1s, 2s, 2p, 3d, etc. Accounting for the two types of valence subbands (heavy hole and light hole) and for the fact that only excitons with s symmetry are optically active (i.e. contribute to the oscillator strength), the excitonic transitions can then be labeled 11H(1s), 11L(1s), etc. Here, the first two indices designate the conduction and heavy (H) or light (L) hole valence subbands, respectively. For zincblende structures such as GaAs the conduction subbands can in fact be approximated accurately by parabolas. The valance subbands are, however, much more complicated because of the four-fold degeneracy of the bulk heavy and light hole valence bands at the valence band edge. This degeneracy causes the heavy and light hole subbands to be coupled resulting in the so-called valence band mixing (VBM) effects, such as 1) Strong nonparabolicities and anisotropy in the valence subband structure; 2) Magnetic field-dependent cyclotron masses; 3) Mixing of Excitons and resulting field effects on the optical absorption. (jhd).

Download or read book Electronic and Optical Properties of Novel Semiconductor Heterostructures written by Jiangbo Wang and published by . This book was released on 2005 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Microscopic Theory of Coherent and Incoherent Optical Properties of Semiconductor Heterostructures written by and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last decades, semiconductors have become increasingly important for many technological applications due to their intriguing electronic properties. As an example, the conductivity of a semiconductors rises with increasing temperature which is opposite to the observations in metals. It is possible to modify the conductivity by the selective introduction of impurities. This so called doping allows for designing devices with well defined conduction properties like for example diodes or transistors. The invention of latter ones has been an important step in the development of modern computers. Unfortunately, the same physical processes that allow to design the electronic characteristics make semiconductor properties very sensitive to undesired impurities such that Wolfgang Pauli called semiconductor physics "dirt physics" in the 1920s. Today, modern epitaxy techniques allow to grow high-quality semiconductor devices with growth accuracies of one single atomic monolayer and a minimum of impurities. The origin of the interesting electronic properties of semiconductors is their special band structure. In contrast to conductors and similar to insulators, semiconductors have a filled valence band and an empty conduction band in the ground state. These bands are energetically separated by the band-gap energy. Compared to insulators, the band-gap energy is small (on the order of 1 eV) such that electrons can be excited from the valence band to the conduction band. The missing electrons in the valence band are often called holes and treated like quasi-particles that have opposite charge, spin and free-particle mass compared to the excited electrons. Depending on the structure of the semiconductor device and the environmental conditions, the electrons in the conduction band may act like the free electrons of a conductor and thus contribute to the conductivity. "Über Halbleiter sollte man nicht arbeiten, das ist eine Schweinerei, wer weiß ob es überhaupt.

Download or read book Theory of Electronic and Optical Properties of Semiconductor Heterostructures written by Mohamed El Hadi Lazzouni and published by . This book was released on 1993 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Giovanni Agostini and published by Elsevier. This book was released on 2011-08-11 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors

Download or read book Semiconductors and Their Heterostructures microform Contributions to the Theory of Electronic and Optical Properties written by Claudio Aversa and published by National Library of Canada = Bibliothèque nationale du Canada. This book was released on 1995 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electronic Structure and Optical Properties of Semiconductor Heterostructures written by D. Birkedal and published by . This book was released on 1991 with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Microscopic Theory of Coherent and Incoherent Optical Properties of Semiconductor Heterostructures written by Martin Schäfer and published by . This book was released on 2008 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electronic Structure and Optical Properties of Semiconductors written by Marvin L. Cohen and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 273 pages. Available in PDF, EPUB and Kindle. Book excerpt: We began planning and writing this book in the late 1970s at the suggestion of Manuel Cardona and Helmut Lotsch. We also received considerable en couragement and stimulation from colleagues. Some said there was a need for instructional material in this area while others emphasized the utility of a research text. We tried to strike a compromise. The figures, tables, and references are included to enable researchers to obtain quickly essential information in this area of semiconductor research. For instructors and stu dents, we attempt to cover some basic ideas about electronic structure and semiconductor physics with applications to real, rather than model, solids. We wish to thank our colleagues and collaborators whose research re sults and ideas are presented here. Special thanks are due to Jim Phillips who influenced us both during our formative years and afterwards. We are grateful to Sari Yamagishi for her patience and skill with the typing and production of the manuscript. Finally, we acknowledge the great patience of Helmut Lotsch and Manuel Cardona. Berkeley, CA M.L. Cohen Minneapolis, MN, J.R. Chelikowsky March 1988 VII Contents 1. Introduction............................................... 1 2. Theoretical Concepts and Methods ..................... 4 2.1 The One-Electron Model and Band Structure............ 7 2.2 Properties of En(k) ...................................... 11 3. Pseudopotentials. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 . . . . . . . . . . . . 3.1 The Empirical Pseudopotential Method.................. 20 3.2 Self-Consistent and Ab Initio Pseudopotentials ........... 25 4. Response Functions and Density of States .............. 30 4.1 Charge Density and Bonding ................... . . . . . . . . . 38 .

Download or read book Electronic Properties of Semiconductor Interfaces written by Winfried Mönch and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.

Download or read book An Electronic and Optical Theory of Semiconductor Heterostructures written by Paul Michael Young and published by . This book was released on 1992 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by S. Sanguinetti and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Wave Mechanics Applied to Semiconductor Heterostructures written by Gerald Bastard and published by EDP Sciences. This book was released on 1988 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Examines the basic electronic and optical properties of two- dimensional semiconductor heterostructures based on III-V and II-VI compounds. Explores various consequences of one-dimensional size-quantization on the most basic physical properties of heterolayers. Beginning with basic quantum mechanical properties of idealized quantum wells and superlattices, it discusses the occurrence of bound states when the heterostructure is imperfect or when it is shone with near bandgap light.

Download or read book 2D Materials written by Phaedon Avouris and published by Cambridge University Press. This book was released on 2017-06-29 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt: Learn about the most recent advances in 2D materials with this comprehensive and accessible text. Providing all the necessary materials science and physics background, leading experts discuss the fundamental properties of a wide range of 2D materials, and their potential applications in electronic, optoelectronic and photonic devices. Several important classes of materials are covered, from more established ones such as graphene, hexagonal boron nitride, and transition metal dichalcogenides, to new and emerging materials such as black phosphorus, silicene, and germanene. Readers will gain an in-depth understanding of the electronic structure and optical, thermal, mechanical, vibrational, spin and plasmonic properties of each material, as well as the different techniques that can be used for their synthesis. Presenting a unified perspective on 2D materials, this is an excellent resource for graduate students, researchers and practitioners working in nanotechnology, nanoelectronics, nanophotonics, condensed matter physics, and chemistry.

Download or read book Fundamentals of Semiconductors written by Peter YU and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 651 pages. Available in PDF, EPUB and Kindle. Book excerpt: Excellent bridge between general solid-state physics textbook and research articles packed with providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors "The most striking feature of the book is its modern outlook ... provides a wonderful foundation. The most wonderful feature is its efficient style of exposition ... an excellent book." Physics Today "Presents the theoretical derivations carefully and in detail and gives thorough discussions of the experimental results it presents. This makes it an excellent textbook both for learners and for more experienced researchers wishing to check facts. I have enjoyed reading it and strongly recommend it as a text for anyone working with semiconductors ... I know of no better text ... I am sure most semiconductor physicists will find this book useful and I recommend it to them." Contemporary Physics Offers much new material: an extensive appendix about the important and by now well-established, deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters.