Download or read book Theory and Simulation of Novel Low power Nanotransistors written by Raphaël Prentki and published by . This book was released on 2022 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: "Moore's law predicts an exponential growth of the number of transistors on integrated circuits (ICs). Transistors are now being downscaled to nanometric dimensions, making it increasingly difficult to maintain their power consumption at an acceptable level. Indeed, thermodynamics and electrostatics set a lower bound for the subthreshold swing (STS) of the industry-standard silicon fin field-effect transistor (FinFET) and, in turn, the power supply voltage of FinFET-based ICs. To resolve this power dissipation problem, the semiconductor industry will need to adopt transistors with novel channel materials, gate geometries, and/or charge transport mechanisms. Low-dimensional materials, such as silicon nanowires (NWs), are required for gate-all-around (GAA) field-effect transistors (FETs) and improved device electrostatics. The tunnel field-effect transistor (TFET) harnesses band-to-band tunnelling to achieve low STS. In this thesis, through various analytical and numerical tools of electrostatics, solid-state physics, as well as quantum and statistical mechanics, I investigate the nanoscale device physics of these novel transistors and propose potential solutions to the power dissipation problem. Low-dimensional semiconductors exhibit weak screening, which is detrimental to the performance and scalability of nanotransistors. Typically, screening in semiconductors is strengthened by chemical doping. However, semiconductor doping is limited by such practical concerns as bandgap narrowing and solid solubility limits of dopants. To resolve this issue, I introduce bound-charge engineering (BCE), a novel and relatively simple scheme where a surface bound charge is engineered on the interface between a semiconductor and a neighbouring oxide to strengthen screening. I establish BCE by basic electrostatics; BCE is thus widely applicable to emerging materials and novel devices, in principle. For FET applications, several oxides should be used in conjunction: a low-permittivity spacer oxide for strong screening and a high-permittivity gate oxide for high gate control. I substantiate the BCE scheme by atomistic quantum transport simulations based on the nonequilibrium Green's function (NEGF) formalism and the tight-binding (TB) model. In silicon NW TFETs, I demonstrate that BCE increases the on-state current by orders of magnitude, and the combination of oxides yields minimal STS. This enables the practical application of TFETs at higher clock frequency and lower power supply voltage, paving a way toward improved low-power transistors. To expand our understanding of BCE qualitatively and quantitatively, I derive an analytical surface potential model for cylindrical GAA BCE-assisted silicon NW FETs with arbitrary and possibly distinct spacer and gate oxides. This model is based on scaling theory and verified against NEGF-TB simulations; it provides an intuitive formalism for developing and modelling devices with BCE. Finally, I apply BCE to reduce direct source-to-drain tunnelling (DSDT) leakage in very short-channel FETs; DSDT is generally understood to set the ultimate scaling limit of FETs. Supported by NEGF-TB simulations and the surface potential model, I demonstrate that BCE can reduce DSDT down to acceptable levels in FETs with channel lengths as small as 1.5 nm, thereby paving a way toward ultra-scaled FETs"--

Download or read book Nanoscale Transistors written by Mark Lundstrom and published by Springer Science & Business Media. This book was released on 2006-06-18 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules

Download or read book Fundamentals of Nanotransistors written by Mark Lundstrom and published by World Scientific Publishing Company Incorporated. This book was released on 2018 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, "bottom-up approach" that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.

Download or read book Fundamentals Of Nanotransistors written by Mark S Lundstrom and published by World Scientific Publishing Company. This book was released on 2017-07-11 with total page 389 pages. Available in PDF, EPUB and Kindle. Book excerpt: The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, “bottom-up approach” that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.

Download or read book Modeling and Simulation of Nano Scale Electronics Based on Novel Low Dimentional Materials written by Yang Lu and published by . This book was released on 2014 with total page 193 pages. Available in PDF, EPUB and Kindle. Book excerpt: Review of the problem and suggestion of simulation method are provided.

Download or read book Low Power Designs in Nanodevices and Circuits for Emerging Applications written by Shilpi Birla and published by CRC Press. This book was released on 2023-11-14 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: This reference textbook discusses low power designs for emerging applications. This book focuses on the research challenges associated with theory, design, and applications towards emerging Microelectronics and VLSI device design and developments, about low power consumptions. The advancements in large-scale integration technologies are principally responsible for the growth of the electronics industry. This book is focused on senior undergraduates, graduate students, and professionals in the field of electrical and electronics engineering, nanotechnology. This book: • Discusses various low power techniques and applications for designing efficient circuits. • Covers advance nanodevices such as FinFETs, TFETs, CNTFETs. • Covers various emerging areas like Quantum-Dot Cellular Automata Circuits and FPGAs and sensors. • Discusses applications like memory design for low power applications using nanodevices. The number of options for ICs in control applications, telecommunications, high-performance computing, and consumer electronics continues to grow with the emergence of VLSI designs. Nanodevices have revolutionized the electronics market and human life; it has impacted individual life to make it more convenient. They are ruling every sector such as electronics, energy, biomedicine, food, environment, and communication. This book discusses various emerging low power applications using CMOS and other emerging nanodevices.

Download or read book Design Fabrication Characterization and Modeling of Novel Ultra Low Power Heterodimensional Field Effect Transistors written by Michael J. Hurt and published by . This book was released on 1998 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nano Electronic Devices written by Dragica Vasileska and published by Springer. This book was released on 2011-06-22 with total page 441 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book surveys the advanced simulation methods needed for proper modeling of state-of-the-art nanoscale devices. It systematically describes theoretical approaches and the numerical solutions that are used in explaining the operation of both power devices as well as nano-scale devices. It clearly explains for what types of devices a particular method is suitable, which is the most critical point that a researcher faces and has to decide upon when modeling semiconductor devices.

Download or read book Advanced Nanoelectronics written by Razali Ismail and published by CRC Press. This book was released on 2018-09-03 with total page 459 pages. Available in PDF, EPUB and Kindle. Book excerpt: While theories based on classical physics have been very successful in helping experimentalists design microelectronic devices, new approaches based on quantum mechanics are required to accurately model nanoscale transistors and to predict their characteristics even before they are fabricated. Advanced Nanoelectronics provides research information on advanced nanoelectronics concepts, with a focus on modeling and simulation. Featuring contributions by researchers actively engaged in nanoelectronics research, it develops and applies analytical formulations to investigate nanoscale devices. The book begins by introducing the basic ideas related to quantum theory that are needed to better understand nanoscale structures found in nanoelectronics, including graphenes, carbon nanotubes, and quantum wells, dots, and wires. It goes on to highlight some of the key concepts required to understand nanotransistors. These concepts are then applied to the carbon nanotube field effect transistor (CNTFET). Several chapters cover graphene, an unzipped form of CNT that is the recently discovered allotrope of carbon that has gained a tremendous amount of scientific and technological interest. The book discusses the development of the graphene nanoribbon field effect transistor (GNRFET) and its use as a possible replacement to overcome the CNT chirality challenge. It also examines silicon nanowire (SiNW) as a new candidate for achieving the downscaling of devices. The text describes the modeling and fabrication of SiNW, including a new top-down fabrication technique. Strained technology, which changes the properties of device materials rather than changing the device geometry, is also discussed. The book ends with a look at the technical and economic challenges that face the commercialization of nanoelectronics and what universities, industries, and government can do to lower the barriers. A useful resource for professionals, researchers, and scientists, this work brings together state-of-the-art technical and scientific information on important topics in advanced nanoelectronics.

Download or read book Nanoelectronic Device Applications Handbook written by James E. Morris and published by CRC Press. This book was released on 2013-06-17 with total page 942 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoelectronic Device Applications Handbook gives a comprehensive snapshot of the state of the art in nanodevices for nanoelectronics applications. Combining breadth and depth, the book includes 68 chapters on topics that range from nano-scaled complementary metal–oxide–semiconductor (CMOS) devices through recent developments in nano capacitors and AlGaAs/GaAs devices. The contributors are world-renowned experts from academia and industry from around the globe. The handbook explores current research into potentially disruptive technologies for a post-CMOS world. These include: Nanoscale advances in current MOSFET/CMOS technology Nano capacitors for applications such as electronics packaging and humidity sensors Single electron transistors and other electron tunneling devices Quantum cellular automata and nanomagnetic logic Memristors as switching devices and for memory Graphene preparation, properties, and devices Carbon nanotubes (CNTs), both single CNT and random network Other CNT applications such as terahertz, sensors, interconnects, and capacitors Nano system architectures for reliability Nanowire device fabrication and applications Nanowire transistors Nanodevices for spintronics The book closes with a call for a new generation of simulation tools to handle nanoscale mechanisms in realistic nanodevice geometries. This timely handbook offers a wealth of insights into the application of nanoelectronics. It is an invaluable reference and source of ideas for anyone working in the rapidly expanding field of nanoelectronics.

Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.

Download or read book Atomistic Simulation Of Quantum Transport In Nanoelectronic Devices With Cd rom written by Yu Zhu and published by World Scientific. This book was released on 2016-05-20 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt: Computational nanoelectronics is an emerging multi-disciplinary field covering condensed matter physics, applied mathematics, computer science, and electronic engineering. In recent decades, a few state-of-the-art software packages have been developed to carry out first-principle atomistic device simulations. Nevertheless those packages are either black boxes (commercial codes) or accessible only to very limited users (private research codes). The purpose of this book is to open one of the commercial black boxes, and to demonstrate the complete procedure from theoretical derivation, to numerical implementation, all the way to device simulation. Meanwhile the affiliated source code constitutes an open platform for new researchers. This is the first book of its kind. We hope the book will make a modest contribution to the field of computational nanoelectronics.

Download or read book Semiconductor Detector Systems written by Helmuth Spieler and published by OUP Oxford. This book was released on 2005-08-25 with total page 513 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor sensors patterned at the micron scale combined with custom-designed integrated circuits have revolutionized semiconductor radiation detector systems. Designs covering many square meters with millions of signal channels are now commonplace in high-energy physics and the technology is finding its way into many other fields, ranging from astrophysics to experiments at synchrotron light sources and medical imaging. This book is the first to present a comprehensive discussion of the many facets of highly integrated semiconductor detector systems, covering sensors, signal processing, transistors and circuits, low-noise electronics, and radiation effects. The diversity of design approaches is illustrated in a chapter describing systems in high-energy physics, astronomy, and astrophysics. Finally a chapter "Why things don't work" discusses common pitfalls. Profusely illustrated, this book provides a unique reference in a key area of modern science.

Download or read book Modeling and Simulation in Engineering written by Jan Valdman and published by BoD – Books on Demand. This book was released on 2020-12-09 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: The general aim of this book is to present selected chapters of the following types: chapters with more focus on modeling with some necessary simulation details and chapters with less focus on modeling but with more simulation details. This book contains eleven chapters divided into two sections: Modeling in Continuum Mechanics and Modeling in Electronics and Engineering. We hope our book entitled "Modeling and Simulation in Engineering - Selected Problems" will serve as a useful reference to students, scientists, and engineers.

Download or read book Near equilibrium Transport Fundamentals And Applications written by Mark S Lundstrom and published by World Scientific Publishing Company. This book was released on 2012-11-29 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: These lectures are designed to introduce students to the fundamentals of carrier transport in nano-devices using a novel, “bottom up approach” that agrees with traditional methods when devices are large, but which also works for nano-devices. The goal is to help students learn how to think about carrier transport at the nanoscale and also how the bottom up approach provides a new perspective to traditional concepts like mobility and drift-diffusion equations. The lectures are designed for engineers and scientists and others who need a working knowledge of near-equilibrium (“low-field” or “linear”) transport. Applications of the theory and measurement considerations are also addressed. The lectures serve as a starting point to an extensive set of instructional materials available online.

Download or read book Nanoelectronics and Nanosystems written by Karl Goser and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: An accessible introduction for electronic engineers, computer scientists and physicists. The overview covers all aspects from underlying technologies to circuits and systems. The challenge of nanoelectronics is not only to manufacture minute structures but also to develop innovative systems for effective integration of the billions of devices. On the system level, various architectures are presented and important features of systems, such as design strategies, processing power, and reliability are discussed. Many specific technologies are presented, including molecular devices, quantum electronic devices, resonant tunnelling devices, single electron devices, superconducting devices, and even devices for DNA and quantum computing. The book also compares these devices with current silicon technologies and discusses limits of electronics and the future of nanosystems.

Download or read book FinFET Modeling for IC Simulation and Design written by Yogesh Singh Chauhan and published by Academic Press. This book was released on 2015-03-17 with total page 305 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is the first to explain FinFET modeling for IC simulation and the industry standard – BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, providing a step-by-step approach for the efficient extraction of model parameters. With this book you will learn: - Why you should use FinFET - The physics and operation of FinFET - Details of the FinFET standard model (BSIM-CMG) - Parameter extraction in BSIM-CMG - FinFET circuit design and simulation - Authored by the lead inventor and developer of FinFET, and developers of the BSIM-CM standard model, providing an experts' insight into the specifications of the standard - The first book on the industry-standard FinFET model - BSIM-CMG