Download or read book Theoretical Study of Local Defect Structures in Dilute Nitride Semiconductors written by John Anthony Buckeridge and published by . This book was released on 2010 with total page 217 pages. Available in PDF, EPUB and Kindle. Book excerpt: The focus of this work is an investigation of the local structure of nitrogen-related defects in the dilute nitride semiconductor, GaNxAs1-x. Dilute nitride alloys have attracted considerable attention in recent years. When a small fraction of the As atoms in GaAs or InGaAs are replaced by N, the energy gap of the material decreases rapidly; for example by 150 meV when the N concentration is 1%, making it a promising material for long wavelength (1.3 and 1.55æm) telecommunications lasers based on a GaAs substrate and for extending the wavelength range of GaAs-based solar cells further into the infrared. However, the addition of these small concentrations of nitrogen to GaAs has also been found to cause a drastic reduction in n-type carrier mobility, to such a degree as to render the materials unacceptable for many applications at present. The reductions in band gap and carrier mobility are attributed to an interaction between the GaAs conduction band, and a set of localized or quasi-localized defect states associated with the substitution of N on As sites at random throughout the alloy. The drastically low mobility in particular is attributed to the interaction with localized defect states associated with clusters of N atoms sharing Ga nearest-neighbours, with energies very close to the conduction band edge. We calculate methods of probing defects associated with substitutional N in GaAs. In particular we present results of first-principles density functional theory calculations on the localized vibrational mode (LVM) spectrum of the Si-N defect in GaAs, and the effects of strain on the isolated nitrogen LVM. A gated, double-quantum-well InGaAs/GaNxAs1-x heterostructure device, in which the interaction between conduction band carriers and states associated with clusters of nitrogen atoms, forming at random throughout the alloy, can be tuned by varying the gating electric fields, is described. The mobility as a function of gate field is calculated, with reductions in mobility occurring when the Fermi level is resonant with the energies of the N cluster states, providing a possible experimental method of probing these states, which lie near the GaAs conduction band edge and are considered to be the primary mobility-limiting factor in the dilute nitrides.
Download or read book Hydrogenated Dilute Nitride Semiconductors written by Gianluca Ciatto and published by CRC Press. This book was released on 2015-04-01 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: The nonlinear behavior of nitrogen and the passivation effect of hydrogen in dilute nitrides open the way to the manufacture of a new class of nanostructured devices with in-plane variation of the optical band gap. This book addresses the modifications of the electronic structure and of the optical and structural properties induced in these technol
Download or read book III Nitride Semiconductors written by M.O. Manasreh and published by Elsevier. This book was released on 2000-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Download or read book Dilute Nitride Semiconductors written by Mohamed Henini and published by Elsevier. This book was released on 2004-12-15 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 μm and 1.55 μm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community
Download or read book Dilute III V Nitride Semiconductors and Material Systems written by Ayse Erol and published by Springer Science & Business Media. This book was released on 2008-01-12 with total page 607 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Download or read book First principles Study of Localized Vibrational Modes in Dilute Nitride Semiconductors written by Amanuel Matewos Teweldeberhan and published by . This book was released on 2007 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt: Dilute nitride alloys (GaNAs, InGaNAs, AlGaNAs) have attracted considerable interest in the past few years, both because of their unique physical properties and potential device applications. When a small fraction of As atoms in these alloys are replaced by N, the energy gap decreases rapidly; for example, by 150 meV when 1% of N is added to GaAs. This makes the nitride alloys promising candidates for long wavelength (1.3 and 1.5 micron) telecommunication lasers based on GaAs substrates and for extending the wavelength range of GaAs-based solar cells further into the infrared. Carrier transport in dilute nitride semiconductors is strongly affected by the type of nitrogen defects present. Localized vibrational mode (LVM) spectroscopy is a useful technique for studying the local bonding of impurities and impurity complexes in semiconductors. It can also be used for determining the type and concentration of defects in semiconductors. Substantial experimental work using both Raman and Fourier transform infrared absorption (FTIR) spectroscopies, has been done to study the LVM caused by the incorporation of N into GaAs, InGaAs, and AlGaAs. However, although first-principles calculations of the equilibrium structure of the substitutional N in GaAs are available, the dynamics of the LVM have not been investigated theoretically. The aim of this thesis is to provide a theoretical understanding of the vibrational signature of various defects from first-principles methods, which will be useful in characterizing dilute nitride alloys by vibrational spectroscopy. The LVMs associated with isolated N, substitutional N-N pair, N-N and N-As split-interstitials, and N-centered clusters in dilute nitride semiconductors have been studied using first-principles electronic structure theory methods and compared with available Raman and FTIR spectroscopy measurements. Models of high-frequency modes are built from a linear combination of modes localized near each nitrogen atom to study the phonon spectra of substitutional nitrogen atoms in the random GaNAs alloy.
Download or read book Hydrogenated Dilute Nitride Semiconductors written by Gianluca Ciatto and published by Pan Stanford. This book was released on 2015-04-01 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The nonlinear behavior of nitrogen and the passivation effect of hydrogen in dilute nitrides open the way to the manufacture of a new class of nanostructured devices with in-plane variation of the optical band gap. This book addresses the modifications of the electronic structure and of the optical and structural properties induced in these technologically important semiconductors by atomic hydrogen irradiation. The book comprises discussions on experimental results from several techniques, enriched by state-of-the-art theoretical studies aimed at clarifying the origin of hydrogenation effects that lead to the discovery of specific nitrogen–hydrogen complexes. It presents techniques, such as infrared absorption spectroscopy, synchrotron radiation, and nuclear reaction analysis, which have indeed been crucial for addressing the physical origin of hydrogenation effects and their role in fine structural characterization. The book is not a simple assembly of the contributions of different groups on the subject; it rather tells the complete story of the amazing effects of hydrogen irradiation from the first observations to the discovery of their origin and to potential technology transfer. The primary scope of the book is to guide PhD students and new scientists into the field and to inspire similar analysis approaches in other fields.
Download or read book Dilute III V Nitride Semiconductors and Material Systems written by Ayse Erol and published by Springer. This book was released on 2009-09-02 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Download or read book Compositional Analysis of Dilute Nitride Semiconductor Structures written by Chris Lewis and published by . This book was released on 2002 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rare Earth and Transition Metal Doping of Semiconductor Materials written by Volkmar Dierolf and published by Woodhead Publishing. This book was released on 2016-01-23 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron’s electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics Details the properties of semiconductors for spintronics
Download or read book Index to Theses with Abstracts Accepted for Higher Degrees by the Universities of Great Britain and Ireland and the Council for National Academic Awards written by and published by . This book was released on 2009 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics and Applications of Dilute Nitrides written by I. Buyanova and published by CRC Press. This book was released on 2004-08-30 with total page 457 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since their development in the 1990s, it has been discovered that diluted nitrides have intriguing properties that are not only distinct from those of conventional semiconductor materials, but also are conducive to various applications in optoelectronics and photonics. The book examines these applications and presents a broad and in-depth look at t
Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Expert contributors Reviews of the most important recent literature Clear illustrations A broad view, including examination of defects in different semiconductors
Download or read book X Ray Absorption Spectroscopy of Semiconductors written by Claudia S. Schnohr and published by Springer. This book was released on 2014-11-05 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-situ measurements of the effects of temperature and pressure. Summarizing research in their respective fields, the authors highlight important experimental findings and demonstrate the capabilities and applications of the XAS technique. This book provides a comprehensive review and valuable reference guide for both XAS newcomers and experts involved in semiconductor materials research.
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Giovanni Agostini and published by Elsevier. This book was released on 2011-08-11 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 788 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Download or read book Ceramic Abstracts written by and published by . This book was released on 1998 with total page 1040 pages. Available in PDF, EPUB and Kindle. Book excerpt:
