Download or read book Theoretical Studies of the Chemistry and Physics of Oxygen in Silicon written by Lawrence C. Snyder and published by . This book was released on 1988 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have developed a cyclic-cluster program to compute the structure and properties of defects in crystalline solids. We have found the semi-empirical electronic structure method MINDO/3 to give the best account of the structure, stability and states near the gap for defects in silicon. We have applied the cyclic cluster program to describe the chemistry and physics of hydrogen and oxygen in a silicon crystal. We have concluded that a di-ylid is a promising candidate for the core of the 450 oxygen thermal donor in silicon. We have discovered that a four-member ring containing two oxygen atoms is likely to diffuse much faster than interstitial oxygen in silicon. We have applied perturbation theory to give a qualitative explanation of the ladder of effective mass states associated with oxygen clusters in silicon and germanium. Keywords: Semiconductor theory, Silicon defects, Oxygen thermal donors. (JES).
Download or read book Tailor Made Silicon Oxygen Compounds written by Robert Corriu and published by Springer. This book was released on 1996 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: The title "Tailor-Made Silicon-Oxygen Compounds - From Molecules to Materials" was the topic of a workshop at the Centre of Interdisciplinary Research (ZiF) in Bielefeld, organized by the editors of the monograph. The field of SiO compounds is actually very exciting and rapidly developing. About 25 leading scientists from different areas (molecular chemistry, solid-state chemistry, material science, physical and theoretical chemistry) present newest results and scientific perspectives within the following subdisciplines: Fundamental SiO-systems; siloxenes; silicon monoxide; functionalized siloxanes; silicate assembly; siloxane assembly. Der Titel "Tailor-Made Silicon-Oxygen Compounds - From Molecules to Materials" ist das Thema eines Workshops, der am Zentrum für interdisziplinäre Forschung (ZiF) in Bielefeld stattfand und von den Herausgebern des Buch organisiert wurde. Die Forschung auf dem Gebiet der Silicium-Sauerstoff-Verbindungen ist äußerst aktuell und entwickelt sich rasant. Etwa 25 Wissenschaftler aus verschiedenen Bereichen (Molekülchemie, Festkörperchemie, Materialwissenschaften, Physikalische und Theoretische Chemie) präsentieren neueste Ergebnisse und wissenschaftliche Perspektiven auf den folgenden Teilgebieten: Si-O-Basissysteme, Siloxen, Siliciummonoxid, funktionalisierte Siloxane, komplexe Silikat-Strukturen, komplexe Siloxan-Strukturen
Download or read book Oxygen 17 and Silicon 29 written by and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Although it was shown very early [1] that the isotope 29Si is very valuable for NMR research, severe technical difficulties had to be overcome before silicon spectra could be recorded. This was due to the low sensitivity of the isotope resulting from its low gyro magnetic ratio, its low abundance and the rather long relaxation times. The introduction of the Fourier-Transform-Technique (FT-NMR) helped to surmount most of these problems, with the result, that more and more papers concerning silicon NMR appear. Thus, it seems now that most of the salient features of 29Si-NMR are known today. Some resume of the state of the art of 29Si_NMR have been reported [1-4]. Although the theory of 29Si-NMR is not yet understood beyond the basic features, it promises to be of value mainly for two reasons: 1. Silicon is strategically located in the Periodic Table of the elements between the elements carbon, aluminum and phosphorus. For an unified theory of chemical shifts and coupling constants of the heavier elements silicon NMR values will be important. 2. The normal coordination number of silicon is four. If the current view of the chemical shifts of the heavier elements is correct, then the paramagnetic part is dominant for the measured shift data. Two of the parameters used for the calcu lation of the paramagnetic part are bond orders and angles. Bond angles are rare ly determined experimentally with high precision.
Download or read book Oxygen 17 and Silicon 29 written by and published by Springer. This book was released on 2014-03-12 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: Although it was shown very early [1] that the isotope 29Si is very valuable for NMR research, severe technical difficulties had to be overcome before silicon spectra could be recorded. This was due to the low sensitivity of the isotope resulting from its low gyro magnetic ratio, its low abundance and the rather long relaxation times. The introduction of the Fourier-Transform-Technique (FT-NMR) helped to surmount most of these problems, with the result, that more and more papers concerning silicon NMR appear. Thus, it seems now that most of the salient features of 29Si-NMR are known today. Some resume of the state of the art of 29Si_NMR have been reported [1-4]. Although the theory of 29Si-NMR is not yet understood beyond the basic features, it promises to be of value mainly for two reasons: 1. Silicon is strategically located in the Periodic Table of the elements between the elements carbon, aluminum and phosphorus. For an unified theory of chemical shifts and coupling constants of the heavier elements silicon NMR values will be important. 2. The normal coordination number of silicon is four. If the current view of the chemical shifts of the heavier elements is correct, then the paramagnetic part is dominant for the measured shift data. Two of the parameters used for the calcu lation of the paramagnetic part are bond orders and angles. Bond angles are rare ly determined experimentally with high precision.
Download or read book Silicon Chemistry written by Peter Jutzi and published by John Wiley & Sons. This book was released on 2007-09-24 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt: The combined results from an international research project involving 40 interdisciplinary groups, providing the latest knowledge from the past few years. Adopting an application-oriented approach, this handy reference is a must-have for every silicon chemist, whether working in inorganic, organic, physical or polymer chemistry, materials science or physics.
Download or read book Tailor made Silicon oxygen Compounds written by R. Corrin and published by Springer. This book was released on 1996 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt: The title "Tailor-Made Silicon-Oxygen Compounds - From Molecules to Materials the topic of a workshop at the Centre of Interdisciplinary Research (ZiF) in Bielefeld, organized by the editors of the monograph. The field of SiO compounds is actually very exciting and rapidly developing. About 25 leading scientists from different areas (molecular chemistry, solid-state chemistry, material science, physical and theoretical chemistry) present newest results and scientific perspectives within the following subdisciplines: Fundamental SiO-systems; siloxenes; silicon monoxide; functionalized siloxanes; silicate assembly; siloxane assembly.
Download or read book Research in Progress written by and published by . This book was released on 1987 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Theoretical Studies in Silicon Chemistry written by Roger Scott Grev and published by . This book was released on 1986 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Theoretical Studies of Silicon Chemistry written by and published by . This book was released on 1990 with total page 53 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Research in Progress written by United States. Army Research Office and published by . This book was released on 1987 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt: Vols. for 1977- consist of two parts: Chemistry, biological sciences, engineering sciences, metallurgy and materials science (issued in the spring); and Physics, electronics, mathematics, geosciences (issued in the fall).
Download or read book Theoretical Studies of Silicon and Related Elements written by and published by . This book was released on 2002 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: On the theoretical side, a new highly scalable code for frozen core second order perturbation theory gradients for closed shell molecules has been developed. The development of analogous codes for molecules with unpaired electrons is in progress. A sequential unrestricted code for this purposed has been completed. The derivation for the spin-restricted open shell second order perturbation theory gradients has been completed, and a paper describing this derivation has now been accepted. Other important developments are new convergence methods for MCSCF wave functions that facilitate MCSCF calculations on large molecules, the derivation of gradients for multi-reference second order perturbation theory, the development and implementation of a full-CI method that is amenable to parallelization, further developments of our effective fragment potential (EFP) method for studying solvation and liquid behavior, the development of molecular dynamics and Monte Carlo methods to facilitate the study of solvation and liquid behavior, the development and implementation of a new method for producing global potential energy surfaces from sets of ab initio points, the development and implementation of both grid-based and gridless approaches to density functional theory, and the development and implementation of several MCSCF-based approaches to spin-orbit coupling. With regard to applications, considerable progress has been made in our understanding of the mechanisms for formation of POSS (polyhedral oligomeric silsesquioxanes) and the possibility of passing small gas molecules though them. POSS titanium analogs have also been studied, as have the hydrosilation and bis-silylation reactions. Other applications include studies of surface chemistry, several silicon systems and studies of the behavior of water clusters.
Download or read book Physical Chemistry of in and on Silicon written by Gianfranco F. Cerofolini and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of this book is twofold: it is intended for use as a textbook for a ~ourse on electronic materials (indeed, it stems from a series of lectures on this topic delivered at Milan Polytechnic and at the universities of Modena and Parma), and as an up-to-date review for scientists working in the field ::>f silicon processing. Although a number of works on silicon are already available, the vast amount of existing and new data on silicon properties are nowhere adequately summarized in a single comprehensive report. The present volume is intended to fill this gap. Most of the examples dealt with are taken from the authors' every day experience, this choice being dictated merely by their greater knowl edge of these areas. Certain aspects of the physics of silicon have not been included; this is either because they have been treated in standard textbooks (e.g. the inhomogeneously doped semiconductor and the chem istry of isotropic or preferential aqueous etching of silicon), or because they are still in a rapidly evolving phase (e.g. silicon band-gap engineering, generation-recombination phenomena, cryogenic properties and the chem istry of plasma etching). In line with the standard practice in microelectronics, CGS units will be used for mechanical and thermal quantities, and SI units for electrical quan tities. All atomic energies will be given in electronvolts and the angstrom will be the unit of length used for atomic phenomena.
Download or read book Theoretical Studies of Silicon and Metallasilicon Compounds written by Monica Kosa and published by . This book was released on 2007 with total page 187 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Chemistry of Organic Silicon Compounds written by Saul Patai and published by . This book was released on 1989 with total page 922 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fundamental Aspects of Silicon Oxidation written by Yves J. Chabal and published by Springer Science & Business Media. This book was released on 2001-04-24 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt: The idea for a book dealing specifically with elementary processes in silicon oxidation was formulated after a stimulating symposium that I organized at the American Physical Society meeting in March, 1998. The symposium, en titled "Dynamics of silicon etching and oxidation", explored the mechanisms governing silicon oxidation. With three experimental talks (Hines, Weldon and Gibson) and two theoretical presentations (Pasquarello and Pantelides), it provided a good cross-section of the recent efforts to characterize the in terfacial region of silicon oxide grown on silicon. The novelty of this work comes from the present experimental and theo retical advances that allow the investigation of the formation of ultra-thin silicon oxides. Although structural characterization of bulk silicon oxides and electrical characterization of thin oxides and their interfaces with silicon have produced an extensive body of work over more than forty years, a mechanis tic understanding of the initial oxidation processes has remained elusive. In the past, both the experimental and theoretical efforts have been thwarted by the complexity of dealing with the formation of a mostly amorphous oxide on a crystalline substrate. In this book we present a survey of the state-of-the-art methods, both ex perimental and theoretical, specifically dealing with the issue of amorphous dielectric growth. Each chapter critically reviews and cross-correlates infor mation provided by experimental techniques, such as microscopy, spectro scopy, or scattering, with results obtained using theoretical methods, such as ab initio electronic structure calculations, molecular dynamics, and Monte Carlo simulations.
Download or read book Electrochemistry of Silicon and Its Oxide written by Xiaoge Gregory Zhang and published by Springer Science & Business Media. This book was released on 2001-09-30 with total page 525 pages. Available in PDF, EPUB and Kindle. Book excerpt: The importance of electrochemistry in silicon technology has spurred intense research activity in the last five decades, resulting in a tremendous amount of experimental data and theoretical formulations. This book is a compilation and digestion of this body of information with a comprehensive collection of concrete data on the electrochemical properties of silicon, thorough characterization and analysis of the diverse phenomena of silicon electrodes, and systematic integration of concepts and theories on the reaction mechanisms. Covering all the scientific aspects and engineering applications involved in the silicon/liquid interface, this large body of information will be highly valuable for the current and future progress of the silicon science and technology.
