Download or read book Theoretical and Experimental Studies of Current Saturation Phenomena and Low Frequency Generation Recombination Noise in Junction Gate Field Effect Transit written by Shu-Yau Wu and published by . This book was released on 1966 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dissertation Abstracts International written by and published by . This book was released on 1970 with total page 1090 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Comprehensive Dissertation Index 1861 1972 Engineering civil electrical and industrial written by Xerox University Microfilms and published by . This book was released on 1973 with total page 874 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 1948 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Reliability Driven Experimental and Theoretical Study of Low Frequency Noise Characteristics of AlGaN GaN HFETs written by Farzin Manouchehri and published by . This book was released on 2014 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon technology, which is the most mainstream semiconductor technology, poses serious limitations on fulfilling the market demands in high-frequency and high-power applications. In response to these limitations, wide bandgap III-nitride devices, including AlxGa1-xN/GaN heterojunction field effect transistors (HFETs), were introduced at about two decades ago to satisfy these rapidly growing market demands for high-power/high-frequency amplifiers and high-voltage/high-temperature switches. The most appealing features of III-nitride technologies, and particularly AlxGa1-xN/GaN HFETs, in these applications, are the polarization-induced high sheet-carrier-concentration, high breakdown-voltage, high electron saturation-velocity, and high maximum operating temperature. Therefore, the development of enhancement-mode AlGaN/GaN HFETs is one of the most important endeavours in the past two decades. Low-frequency noise (LFN) spectroscopy, empowered by a proper physics-based model, is received as a capable tool for reliability studies. As a result, devising a physics-based LFN model for AlGaN/GaN HFETs can be capable of not only evaluating the alternative techniques proposed for realization of enhancement-mode AlGaN/GaN HFETs, but also more importantly forecasting the reliability, and noise performance of these devices. In this dissertation, for the first time, a physics-based model for the low-frequency drain noise-current of AlGaN/GaN HFETs is proposed. The proposed model, through including the thermally-activated and quantum tunneling processes of trapping/de-trapping of electrons of channel into and out of the trap-sites located both in the barrier- and buffer-layer of these HFETs, provides a descriptive picture for the LFN behavior of these devices. This work also aims to experimentally investigate the low-frequency noise-current characteristics of both conventional and newly-proposed devices (i.e., fin-, and island-isolated AlGaN/GaN HFETs) at various temperatures (i.e., 150, 300, and 450 K) and bias points in order to address the possible difficulties in performance of these devices. Matching of the trends proposed by the physics-based model to the experimentally recorded LFN spectra of AlGaN/GaN HFETs designed according to a newly-proposed technological variant for positive-shifting the threshold-voltage, confirms the accuracy and predicting power of the proposed model. The insights gained from this model on the latter group of devices provide evidence for the challenges of the aforementioned technological variants, and as a result offer assistance in proposing remedies for those challenges. In formulating the LFN model, a massive discrepancy between the predictions of the existing analytical relationships used by others in evaluating the subband energy levels of AlGaN/GaN HFETs and the realities of the polarization-induced electron concentration of these HFETs was spotted. Careful evaluation of the polarization properties of these heterostructures unmasked the inaccuracy of the assumption of zero penetration of the electron wave into both the AlGaN barrier-layer and the GaN buffer-layer as the culprit in this discrepancy. In response to this observation, a model based on the variational-method for calculating the first and second subband energy levels of AlGaN/GaN HFETs is developed. On the basis of this model, more accurate analytical frameworks for calculating these subband energy levels in AlGaN/GaN HFETs for a variety of barrier thicknesses and Al mole-fractions in the barrier-layer are proposed.
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1990 with total page 944 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Comprehensive Dissertation Index 1861 1972 Author index written by Xerox University Microfilms and published by . This book was released on 1973 with total page 1116 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book U S Government Research and Development Reports Index written by and published by . This book was released on 1969 with total page 942 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Government Reports Annual Index written by and published by . This book was released on 1969 with total page 938 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book British Technology Index written by and published by . This book was released on 1975 with total page 856 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Government Reports Index written by and published by . This book was released on 1969 with total page 976 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1248 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the IRE written by Institute of Radio Engineers and published by . This book was released on 1962 with total page 1206 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Frequency Noise in Advanced MOS Devices written by Martin Haartman and published by Springer Science & Business Media. This book was released on 2007-08-23 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.
Download or read book Proceedings of the IRE written by and published by . This book was released on 1960 with total page 1456 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Current Sources and Voltage References written by Linden T. Harrison and published by Elsevier. This book was released on 2005-08-22 with total page 603 pages. Available in PDF, EPUB and Kindle. Book excerpt: Current Sources and Voltage References provides fixed, well-regulated levels of current or voltage within a circuit. These are two of the most important "building blocks " of analog circuits, and are typically used in creating most analog IC designs. Part 1 shows the reader how current sources are created, how they can be optimized, and how they can be utilized by the OEM circuit designer. The book serves as a "must-have reference for the successful development of precision circuit applications. It shows practical examples using either BJTs, FETs, precision op amps, or even matched CMOS arrays being used to create highly accurate current source designs, ranging from nanoAmps to Amps. In each chapter the most important characteristics of the particular semiconductor type being studied are carefully reviewed. This not only serves as a helpful refresher for experienced engineers, but also as a good foundation for all EE student coursework, and includes device models and relevant equations.Part 2 focuses on semiconductor voltage references, from their design to their various practical enhancements. It ranges from the simple Zener diode to today's most advanced topologies, including Analog Devices' XFET® and Intersil's FGATM (invented while this book was being written). Over 300 applications and circuit diagrams are shown throughout this easy-to-read, practical reference book.* Discusses how to design low-noise, precision current sources using matched transistor pairs.* Explains the design of high power current sources with power MOSFETs* Gives proven techniques to reduce drift and improve accuracy in voltage references.
Download or read book Semiconductor Detector Systems written by Helmuth Spieler and published by OUP Oxford. This book was released on 2005-08-25 with total page 513 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor sensors patterned at the micron scale combined with custom-designed integrated circuits have revolutionized semiconductor radiation detector systems. Designs covering many square meters with millions of signal channels are now commonplace in high-energy physics and the technology is finding its way into many other fields, ranging from astrophysics to experiments at synchrotron light sources and medical imaging. This book is the first to present a comprehensive discussion of the many facets of highly integrated semiconductor detector systems, covering sensors, signal processing, transistors and circuits, low-noise electronics, and radiation effects. The diversity of design approaches is illustrated in a chapter describing systems in high-energy physics, astronomy, and astrophysics. Finally a chapter "Why things don't work" discusses common pitfalls. Profusely illustrated, this book provides a unique reference in a key area of modern science.
