Download or read book The Surface Properties of Oxidized Silicon written by Else Kooi and published by Springer. This book was released on 2013-12-21 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Encyclopedia of Microfluidics and Nanofluidics written by Dongqing Li and published by Springer Science & Business Media. This book was released on 2008-08-06 with total page 2242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covering all aspects of transport phenomena on the nano- and micro-scale, this encyclopedia features over 750 entries in three alphabetically-arranged volumes including the most up-to-date research, insights, and applied techniques across all areas. Coverage includes electrical double-layers, optofluidics, DNC lab-on-a-chip, nanosensors, and more.
Download or read book Oxide Surfaces written by and published by Elsevier. This book was released on 2001-05-21 with total page 677 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a multi-author survey (in 15 chapters) of the current state of knowledge and recent developments in our understanding of oxide surfaces. The author list includes most of the acknowledged world experts in this field. The material covered includes fundamental theory and experimental studies of the geometrical, vibrational and electronic structure of such surfaces, but with a special emphasis on the chemical properties and associated reactivity. The main focus is on metal oxides but coverage extends from 'simple' rocksalt materials such as MgO through to complex transition metal oxides with different valencies.
Download or read book Handbook of Porous Silicon written by Leigh Canham and published by Springer. This book was released on 2021-01-14 with total page 1000 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Handbook of Porous Silicon brings together the expertise of a large, international team of almost 100 academic researchers, engineers, and product developers from industry across electronics, medicine, nutrition and consumer care to summarize the field in its entirity with 150 chapters and 5000 references. The volume presents 5 parts which cover fabrication techniques, material properties, characterization techniques, processing and applications. Much attention was given in the the past to its luminescent properties, but increasingly it is the biodegradability, mechanical, thermal and sensing capabilities that are attracting attention. The volume is divided into focussed data reviews with, wherever possible, quantitative rather than qualitative descriptions of both properties and performance. The book is targeted at undergraduates, postgraduates, and experienced researchers.
Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface 2 written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-09 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
Download or read book High Temperature Oxidation and Corrosion of Metals written by David John Young and published by Elsevier. This book was released on 2008-08-06 with total page 593 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is concerned with providing a fundamental basis for understanding the alloy-gas oxidation and corrosion reactions observed in practice and in the laboratory. Starting with a review of the enabling thermodynamic and kinetic theory, it analyzes reacting systems of increasing complexity. It considers in turn corrosion of a pure metal by a single oxidant and by multi-oxidant gases, followed by corrosion of alloys producing a single oxide then multiple reaction products. The concept of "diffusion paths is used in describing the distribution of products in reacting systems, and diffusion data is used to predict reaction rates whenever possible. - Provides a logical and expert treatment of the subject for use as a guide for advanced-level academics, researchers and practitioners - Text is well supported by numerous micrographs, phase diagrams and tabulations of relevant thermodynamic and kinetic data - Combines physical chemistry and materials science methodologies
Download or read book Thyristor Physics written by A. Blicher and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this volume I attempt to present concisely the physical principles underlying the operation and performance characteristics of the class of semiconductor p-n-p-n switches known as thyristors. The semiconductor controlled rectifier (SCR), the triode AC switch (Triac) the gate turn-off switch (GTO), and the reverse conducting thyristor (RCT) are some of the most important devices belonging to this device family. This book is aimed both at semiconductor-device physicists, designers, and students and at those electronic circuit designers who wish to apply thyristors creatively without the limitation of con sidering them as "black boxes," described only by insufficiently understood electrical ratings. The book endeavors to present an up-to-date account of the progress made in understanding the operation, potentialities, and limitations of thyristors as switching circuit elements. It assumes some basic knowledge of transistor physics and stresses the phe nomenological aspects of thyristor theory with the use of mathe matics not going beyond calculus and differential equations. The first two chapters discuss basic thyristor operation theory. The sub sequent chapters are devoted to the study of the static and dynamic properties of the SCR, the RCT, the GTO, and the triac; they in clude discussions of forward voltage drops, maximum voltage blocking capabilities, turn-on and turn-off transients, current and voltage rise rates, and desirable and undesirable triggering effects.
Download or read book Electrochemistry of Silicon and Its Oxide written by Xiaoge Gregory Zhang and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 525 pages. Available in PDF, EPUB and Kindle. Book excerpt: It may be argued that silicon, carbon, hydrogen, oxygen, and iron are among the most important elements on our planet, because of their involvement in geological, biol- ical, and technological processes and phenomena. All of these elements have been studied exhaustively, and voluminous material is available on their properties. Included in this material are numerous accounts of their electrochemical properties, ranging from reviews to extensive monographs to encyclopedic discourses. This is certainly true for C, H, O, and Fe, but it is true to a much lesser extent for Si, except for the specific topic of semiconductor electrochemistry. Indeed, given the importance of the elect- chemical processing of silicon and the use of silicon in electrochemical devices (e. g. , sensors and photoelectrochemical cells), the lack of a comprehensive account of the electrochemistry of silicon in aqueous solution at the fundamental level is surprising and somewhat troubling. It is troubling in the sense that the non-photoelectrochemistry of silicon seems “to have fallen through the cracks,” with the result that some of the electrochemical properties of this element are not as well known as might be warranted by its importance in a modern technological society. Dr. Zhang’s book, Electrochemical Properties of Silicon and Its Oxide, will go a long way toward addressing this shortcoming. As with his earlier book on the elect- chemistry of zinc, the present book provides a comprehensive account of the elect- chemistry of silicon in aqueous solution.
Download or read book Physics and Technology of Silicon Carbide Devices written by George Gibbs and published by . This book was released on 2016-10-01 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.
Download or read book Silicon Surfaces and Formation of Interfaces written by Jarek Dabrowski and published by World Scientific. This book was released on 2000 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon, the basic material for a multibillion-dollar industry, is the most widely researched and applied semiconductor, and its surfaces are the most thoroughly studied of all semiconductor surfaces. Silicon Surfaces and Formation of Interfaces may be used as an introduction to graduate-level physics and chemical physics. Moreover, it gives a specialized and comprehensive description of the most common faces of silicon crystals as well as their interaction with adsorbates and overlayers. This knowledge is presented in a systematic and easy-to-follow way. Discussion of each system is preceded by a brief overview which categorizes the features and physical mechanisms before the details are presented. The literature is easily available, and the references am numerous and organized in tables, allowing a search without the need to browse through the text. Though this volume focuses on a scientific understanding of physics on the atomistic and mesoscopic levels, it also highlights existing and potential links between basic research in surface science and applications in the silicon industry. It will be valuable to anyone writing a paper, thesis, or proposal in the field of silicon surfaces.
Download or read book Light Microscopy of Carbon Steels written by Leonard Ernest Samuels and published by ASM International. This book was released on with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing over 1,200 representative micrographs and the information and explanatory text that makes them really useful, including composition, condition, etchant, magnification, and more than 100 graphs and tables, this 'how to' book not only gives everyday working examples, but also discusses the relationship between the constitution, metallurgy, and microstructure of various carbon steel products. Contents: Nomenclature of Phases and Constituents; Phase Transformations; Low-Carbon Irons and Steels; Annealing and Normalizing; Spheroidization and Graphitization; Austenitization; Transformation of Austenite; Tempering of Martensite; Welding; Surface Oxidation, Decarburation and Oxidation Scaling; Glossary of Terms; EtchingMethods; ConversionTables; Index.
Download or read book Properties of Porous Silicon written by Leigh T. Canham and published by Institution of Electrical Engineers. This book was released on 1997 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: A detailed insight into porous silicon and its diverse novel applications.
Download or read book Porous Silicon in Practice written by M. J. Sailor and published by John Wiley & Sons. This book was released on 2012-01-09 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: By means of electrochemical treatment, crystalline silicon can be permeated with tiny, nanostructured pores that entirely change the characteristics and properties of the material. One prominent example of this can be seen in the interaction of porous silicon with living cells, which can be totally unwilling to settle on smooth silicon surfaces but readily adhere to porous silicon, giving rise to great hopes for such future applications as programmable drug delivery or advanced, braincontrolled prosthetics. Porous silicon research is active in the fields of sensors, tissue engineering, medical therapeutics and diagnostics, photovoltaics, rechargeable batteries, energetic materials, photonics, and MEMS (Micro Electro Mechanical Systems). Written by an outstanding, well-recognized expert in the field, this book provides detailed, step-by-step instructions to prepare and characterize the major types of porous silicon. It is intended for those new to the fi eld. Sampling of topics covered: * Principles of Etching Porous Silicon * Etch Cell Construction and Considerations * Photonic Crystals, Microcavities, and Bragg Stacks Etched in Silicon * Preparation of Free-standing Films and Particles of Porous Silicon * Preparation of Photoluminescent Nanoparticles from Porous Silicon * Preparation of Silicon Nanowires by Electrochemical Etch of Silicon * Surface Modifi cation Chemistry and Biochemistry * Measurement of Optical Properties * Measurement of Pore Size, Porosity, Thickness, Surface Area The whole is backed by a generous use of color photographs to illustrate the described procedures in detail, plus a bibliography of further literature pertinent to a wide range of application fi elds. For materials scientists, chemists, physicists, optical physicists, biomaterials scientists, neurobiologists, bioengineers, and graduate students in those fields, as well as those working in the semiconductor industry.
Download or read book Fundamental Aspects of Ultrathin Dielectrics on Si based Devices written by Eric Garfunkel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.
Download or read book Fundamental Aspects of Silicon Oxidation written by Yves J. Chabal and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discusses silicon oxidation in a tutorial fashion from both experimental and theoretical viewpoints. The authors report on the state of the art both at Lucent Technology and in academic research. The book will appeal to researchers and advanced students.
Download or read book Energy Research Abstracts written by and published by . This book was released on 1993 with total page 906 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiannual, with semiannual and annual indexes. References to all scientific and technical literature coming from DOE, its laboratories, energy centers, and contractors. Includes all works deriving from DOE, other related government-sponsored information, and foreign nonnuclear information. Arranged under 39 categories, e.g., Biomedical sciences, basic studies; Biomedical sciences, applied studies; Health and safety; and Fusion energy. Entry gives bibliographical information and abstract. Corporate, author, subject, report number indexes.
Download or read book Encyclopedia of Surface and Colloid Science written by Arthur T. Hubbard and published by CRC Press. This book was released on 2002-07-18 with total page 1580 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive reference collects fundamental theories and recent research from a wide range of fields including biology, biochemistry, physics, applied mathematics, and computer, materials, surface, and colloid science-providing key references, tools, and analytical techniques for practical applications in industrial, agricultural, and forensic processes, as well as in the production of natural and synthetic compounds such as foods, minerals, paints, proteins, pharmaceuticals, polymers, and soaps.
