Download or read book The Structural Determination of Non principally Oriented N type Silicon Epitaxial Layers Using X ray and Transmission Electron Microscopy TEM Techniques written by Adrian Paul Bradfield and published by . This book was released on 1987 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Structural Determination of Non principally Oriented N type Silicon Epitaxial Layers Usine X ray and Transmission Electron Microscopy TEM Techniques written by Adrian Paul Bradfield and published by . This book was released on 1987 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Evaluation of Advanced Semiconductor Materials by Electron Microscopy written by David Cherns and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: The last few years have ~een rapid improvements in semiconductor growth techniques which have produced an expanding range of high quality heterostructures for new semiconductor devises. As the dimensions of such structures approach the nanometer level, it becomes increasingly important to characterise materials properties such as composition uniformity, strain, interface sharpness and roughness and the nature of defects, as well as their influence on electrical and optical properties. Much of this information is being obtained by electron microscopy and this is also an area of rapid progress. There have been advances for thin film studies across a wide range of techniques, including, for example, convergent beam electron diffraction, X-ray and electron energy loss microanalysis and high spatial resolution cathodoluminescence as well as by conventional and high resolution methods. Important develop ments have also occurred in the study of surfaces and film growth phenomena by both microscopy and diffraction techniques. With these developments in mind, an application was made to the NATO Science Committee in late summer 1987 to fund an Advanced Research Work shop to review the electron microscopy of advanced semiconductors. This was subsequently accepted for the 1988 programme and became the "NATO Advanced Research Workshop on the Evaluation of Advanced Semiconductor Materials by Electron Microscopy". The Workshop took place in the pleasant and intimate surroundings of Wills Hall, Bristol, UK, during the week 11-17 September 1988 and was attended by fifty-five participants from fourteen countries.

Download or read book Energy Research Abstracts written by and published by . This book was released on 1987 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Epitaxy written by and published by Elsevier. This book was released on 2001-09-26 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.

Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 1904 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Index to Theses with Abstracts Accepted for Higher Degrees by the Universities of Great Britain and Ireland and the Council for National Academic Awards written by and published by . This book was released on 2003 with total page 712 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1248 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization of Epitaxial Semiconductor Films written by Henry Kressel and published by Elsevier Science & Technology. This book was released on 1976 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1997 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nanometrology Using the Transmission Electron Microscope written by Vlad Stolojan and published by Morgan & Claypool Publishers. This book was released on 2015-10-12 with total page 69 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Transmission Electron Microscope (TEM) is the ultimate tool to see and measure structures on the nanoscale and to probe their elemental composition and electronic structure with sub-nanometer spatial resolution. Recent technological breakthroughs have revolutionized our understanding of materials via use of the TEM, and it promises to become a significant tool in understanding biological and biomolecular systems such as viruses and DNA molecules. This book is a practical guide for scientists who need to use the TEM as a tool to answer questions about physical and chemical phenomena on the nanoscale.

Download or read book Metals Abstracts written by and published by . This book was released on 1997 with total page 708 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth and Properties of Ultrathin Epitaxial Layers written by and published by Elsevier. This book was released on 1997-06-18 with total page 673 pages. Available in PDF, EPUB and Kindle. Book excerpt: Although there has been steady progress in understanding aspects of epitaxial growth throughout the last 30 years of modern surface science, work in this area has intensified greatly in the last 5 years. A number of factors have contributed to this expansion. One has been the general trend in surface science to tackle problems of increasing complexity as confidence is gained in the methodology, so for example, the role of oxide/metal interfaces in determining the properties of many practical supported catalysts is now being explored in greater detail. A second factor is the recognition of the potential importance of artificial multilayer materials not only in semiconductor devices but also in metal/metal systems because of their novel magnetic properties. Perhaps even more important than either of these application areas, however, is the newly-discovered power of scanning probe microscopies, and most notably scanning tunneling microscopy (STM), to provide the means to study epitaxial growth phenomena on an atomic scale under a wide range of conditions. These techniques have also contributed to revitalised interest in methods of fabricating and exploiting artificial structures (lateral as well as in layers) on a nanometre scale. This volume, on Growth and Properties of Ultrathin Epitaxial Layers, includes a collection of articles which reflects the present state of activity in this field. The emphasis is on metals and oxides rather than semiconductors.

Download or read book Transmission Electron Microscopy of Silicon VLSI Circuits and Structures written by Robert B. Marcus and published by Wiley-Interscience. This book was released on 1983 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Non destructive X ray Characterization of Wide bandgap Semiconductor Materials and Device Structures written by Nadeemullah A. Mahadik and published by . This book was released on 2008 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work non-destructive x-ray characterization techniques have been used to study undoped and intentionally doped bulk and epitaxial layers, and device structures of wide bandgap semiconductor materials, GaN and SiC. Novel non-destructive x-ray characterization methods were developed to evaluate the uniformity of strain in AlGaN/GaN device structures across the wafer and the results were correlated with device electrical characteristics. In-situ bias induced strain measurements were also carried out for the first time on the AlGaN/GaN Schottky diodes to estimate change in piezoelectric polarization charge at the heterojunction interface with the gate bias voltage. A variety of high resolution x-ray measurements were performed on freestanding Gallium Nitride (GaN) films grown by three different laboratories using hydride phase vapor epitaxy (HVPE) technique. The lattice parameters of the quasi-bulk films were obtained using high-resolution x-ray diffraction spectra. The crystalline quality of the films was determined by measuring the x-ray rocking curves and by ^71 Ga nuclear magnetic resonance (NMR) technique. The anisotropic in-plane strain was determined using a novel grazing incidence x-ray diffraction technique (GID) and conventional x-ray diffraction measurements. Based on these measurements the best free standing films have surface strain anisotropy of 4.0791 x 10^-3 up to a depth of 0.3 [Mu]m and the dislocation density is in the range of 10^5-10^7 /cm^2. High resolution x-ray topography (HRXT) measurements were also performed on the freestanding GaN films. Complete mapping of defects for the entire surface of the GaN films was obtained in a non-destructive way. From these measurements, the lateral dimensions of crystallites and cavities in the films are in the range, 200-500 nm, and 0.5-400 [Mu]m, respectively. The GaN films were found to be warped with a radius of curvature of about 0.5 m. The warpage is attributed to thermal mismatch between GaN and the sapphire substrate during growth. The characteristics of freestanding GaN films measured in this work are detrimental to the fabrication of high-speed devices such as high electron mobility transistors (HEMT) because their performance is highly dependent on the surface and interface quality. High resolution x-ray measurements were also performed on Al+ ion-implanted 4H-Silicon Carbide (SiC) epitaxial layers, before and after 30s ultra-fast microwave annealing in the temperature range 1750-1900 °C, to examine the crystalline quality of the material. Based on the FWHM values of the rocking curves, an improvement in the crystalline quality of the microwave annealed samples was observed compared to the conventional furnace annealed sample. The sample annealed at 1900 °C showed the best rocking curve FWHM of 9 ± 2 arcsecs, which not only confirmed annihilation of the defects introduced during the Al+ ion-implantation process, but also an improvement in crystalline quality over the as-grown virgin 4H-SiC sample that had a rocking curve FWHM of 18.7 ± 2 arcsecs. The theoretical and measured rocking curve FWHM values were obtained and correlated with the depth dependent microwave absorption in the SiC epilayer. These results are very significant for optimizing the annealing parameters to achieve the highest possible implant activation, carrier mobility and crystal quality. Magnesium ion-implantation doped GaN films were also characterized using x-ray diffraction measurements after microwave annealing in the temperature range of 1300 °C - 1500 °C for 5 - 15 s. The FWHM values of the in-situ Mg-doped samples did not change with the microwave annealing for 5 s anneals. The electrical measurements on these samples also showed poor electrical activation of the Mg-implant in the GaN films. These results may be due to the presence of a high concentration of implant generated defects still remaining in the material, even after high temperature annealing for 5 s. From the FWHM values, the 15 s annealing showed an improvement in the crystalline quality of the GaN samples. Also the x-ray diffraction measurements show activation of the Mg implant. Electrical conductivity was observed in these samples, which is due to significant improvement in the crystalline quality and sufficient activation of the Mg implant. In this work, x-ray measurements were also performed on AlGaN/GaN device structures to study the effect of localized strain on the transport measurements across the wafer. The map of in-plane strain of the AlGaN/GaN HEMT wafer showed a one-to-one correspondence with the variation in electrical resistivity. The in-plane strain variation is in the range of 2.295x10^-4 - 3.539x10^-4 resulting in a sheet resistance variation of 345 - 411. The in-situ high resolution x-ray diffraction measurements, performed on the AlGaN/GaN device structures under variable bias conditions, showed in-plane tensile strain for forward bias conditions, and compressive strain for reverse bias. A linear variation in the strain was observed with the bias voltage, which results in a change in the piezoelectric charge at the AlGaN/GaN interface with bias. This variation needs to be considered for the correct modeling of the device transport characteristics.

Download or read book The Structural Quality of AlxGa1 xN Epitaxial Layers Grown by Digitally Alloyed Modulated Precursor Epitaxy Determined by Transmission Electron Microscopy written by and published by . This book was released on 2009 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt: AlxGa1-xN layers of varying composition (0.5

Download or read book Soviet Journal of Quantum Electronics written by and published by . This book was released on 1991 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: