Download or read book The Structural Determination of Non principally Oriented N type Silicon Epitaxial Layers Usine X ray and Transmission Electron Microscopy TEM Techniques written by Adrian Paul Bradfield and published by . This book was released on 1987 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Structural Determination of Non principally Oriented N type Silicon Epitaxial Layers Using X ray and Transmission Electron Microscopy TEM Techniques written by Adrian Paul Bradfield and published by . This book was released on 1987 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Evaluation of Advanced Semiconductor Materials by Electron Microscopy written by David Cherns and published by Springer. This book was released on 1990 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: The last few years have ~een rapid improvements in semiconductor growth techniques which have produced an expanding range of high quality heterostructures for new semiconductor devises. As the dimensions of such structures approach the nanometer level, it becomes increasingly important to characterise materials properties such as composition uniformity, strain, interface sharpness and roughness and the nature of defects, as well as their influence on electrical and optical properties. Much of this information is being obtained by electron microscopy and this is also an area of rapid progress. There have been advances for thin film studies across a wide range of techniques, including, for example, convergent beam electron diffraction, X-ray and electron energy loss microanalysis and high spatial resolution cathodoluminescence as well as by conventional and high resolution methods. Important develop ments have also occurred in the study of surfaces and film growth phenomena by both microscopy and diffraction techniques. With these developments in mind, an application was made to the NATO Science Committee in late summer 1987 to fund an Advanced Research Work shop to review the electron microscopy of advanced semiconductors. This was subsequently accepted for the 1988 programme and became the "NATO Advanced Research Workshop on the Evaluation of Advanced Semiconductor Materials by Electron Microscopy". The Workshop took place in the pleasant and intimate surroundings of Wills Hall, Bristol, UK, during the week 11-17 September 1988 and was attended by fifty-five participants from fourteen countries.

Download or read book Characterization of Epitaxial Semiconductor Films written by Henry Kressel and published by Elsevier Science & Technology. This book was released on 1976 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Transmission Electron Microscopy of Silicon VLSI Circuits and Structures written by Robert B. Marcus and published by Wiley-Interscience. This book was released on 1983 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nanometrology Using the Transmission Electron Microscope written by Vlad Stolojan and published by Morgan & Claypool Publishers. This book was released on 2015-10-12 with total page 69 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Transmission Electron Microscope (TEM) is the ultimate tool to see and measure structures on the nanoscale and to probe their elemental composition and electronic structure with sub-nanometer spatial resolution. Recent technological breakthroughs have revolutionized our understanding of materials via use of the TEM, and it promises to become a significant tool in understanding biological and biomolecular systems such as viruses and DNA molecules. This book is a practical guide for scientists who need to use the TEM as a tool to answer questions about physical and chemical phenomena on the nanoscale.

Download or read book Transmission Electron Microscopy of Semiconductor Nanostructures written by Andreas Rosenauer and published by Springer Science & Business Media. This book was released on 2003-02-13 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides tools well suited for the quantitative investigation of semiconductor electron microscopy. These tools allow for the accurate determination of the composition of ternary semiconductor nanostructures with a spatial resolution at near atomic scales. The book focuses on new methods including strain state analysis as well as evaluation of the composition via the lattice fringe analysis (CELFA) technique. The basics of these procedures as well as their advantages, drawbacks and sources of error are all discussed. The techniques are applied to quantum wells and dots in order to give insight into kinetic growth effects such as segregation and migration. In the first part of the book the fundamentals of transmission electron microscopy are provided. These are needed for an understanding of the digital image analysis techniques described in the second part of the book. There the reader will find information on different methods of composition determination. The third part of the book focuses on applications such as composition determination in InGaAs Stranski--Krastanov quantum dots. Finally it is shown how an improvement in the precision of the composition evaluation can be obtained by combining CELFA with electron holography. This is demonstrated for an AlAs/GaAs superlattice.

Download or read book Non destructive X ray Characterization of Wide bandgap Semiconductor Materials and Device Structures written by Nadeemullah A. Mahadik and published by . This book was released on 2008 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work non-destructive x-ray characterization techniques have been used to study undoped and intentionally doped bulk and epitaxial layers, and device structures of wide bandgap semiconductor materials, GaN and SiC. Novel non-destructive x-ray characterization methods were developed to evaluate the uniformity of strain in AlGaN/GaN device structures across the wafer and the results were correlated with device electrical characteristics. In-situ bias induced strain measurements were also carried out for the first time on the AlGaN/GaN Schottky diodes to estimate change in piezoelectric polarization charge at the heterojunction interface with the gate bias voltage. A variety of high resolution x-ray measurements were performed on freestanding Gallium Nitride (GaN) films grown by three different laboratories using hydride phase vapor epitaxy (HVPE) technique. The lattice parameters of the quasi-bulk films were obtained using high-resolution x-ray diffraction spectra. The crystalline quality of the films was determined by measuring the x-ray rocking curves and by ^71 Ga nuclear magnetic resonance (NMR) technique. The anisotropic in-plane strain was determined using a novel grazing incidence x-ray diffraction technique (GID) and conventional x-ray diffraction measurements. Based on these measurements the best free standing films have surface strain anisotropy of 4.0791 x 10^-3 up to a depth of 0.3 [Mu]m and the dislocation density is in the range of 10^5-10^7 /cm^2. High resolution x-ray topography (HRXT) measurements were also performed on the freestanding GaN films. Complete mapping of defects for the entire surface of the GaN films was obtained in a non-destructive way. From these measurements, the lateral dimensions of crystallites and cavities in the films are in the range, 200-500 nm, and 0.5-400 [Mu]m, respectively. The GaN films were found to be warped with a radius of curvature of about 0.5 m. The warpage is attributed to thermal mismatch between GaN and the sapphire substrate during growth. The characteristics of freestanding GaN films measured in this work are detrimental to the fabrication of high-speed devices such as high electron mobility transistors (HEMT) because their performance is highly dependent on the surface and interface quality. High resolution x-ray measurements were also performed on Al+ ion-implanted 4H-Silicon Carbide (SiC) epitaxial layers, before and after 30s ultra-fast microwave annealing in the temperature range 1750-1900 °C, to examine the crystalline quality of the material. Based on the FWHM values of the rocking curves, an improvement in the crystalline quality of the microwave annealed samples was observed compared to the conventional furnace annealed sample. The sample annealed at 1900 °C showed the best rocking curve FWHM of 9 ± 2 arcsecs, which not only confirmed annihilation of the defects introduced during the Al+ ion-implantation process, but also an improvement in crystalline quality over the as-grown virgin 4H-SiC sample that had a rocking curve FWHM of 18.7 ± 2 arcsecs. The theoretical and measured rocking curve FWHM values were obtained and correlated with the depth dependent microwave absorption in the SiC epilayer. These results are very significant for optimizing the annealing parameters to achieve the highest possible implant activation, carrier mobility and crystal quality. Magnesium ion-implantation doped GaN films were also characterized using x-ray diffraction measurements after microwave annealing in the temperature range of 1300 °C - 1500 °C for 5 - 15 s. The FWHM values of the in-situ Mg-doped samples did not change with the microwave annealing for 5 s anneals. The electrical measurements on these samples also showed poor electrical activation of the Mg-implant in the GaN films. These results may be due to the presence of a high concentration of implant generated defects still remaining in the material, even after high temperature annealing for 5 s. From the FWHM values, the 15 s annealing showed an improvement in the crystalline quality of the GaN samples. Also the x-ray diffraction measurements show activation of the Mg implant. Electrical conductivity was observed in these samples, which is due to significant improvement in the crystalline quality and sufficient activation of the Mg implant. In this work, x-ray measurements were also performed on AlGaN/GaN device structures to study the effect of localized strain on the transport measurements across the wafer. The map of in-plane strain of the AlGaN/GaN HEMT wafer showed a one-to-one correspondence with the variation in electrical resistivity. The in-plane strain variation is in the range of 2.295x10^-4 - 3.539x10^-4 resulting in a sheet resistance variation of 345 - 411. The in-situ high resolution x-ray diffraction measurements, performed on the AlGaN/GaN device structures under variable bias conditions, showed in-plane tensile strain for forward bias conditions, and compressive strain for reverse bias. A linear variation in the strain was observed with the bias voltage, which results in a change in the piezoelectric charge at the AlGaN/GaN interface with bias. This variation needs to be considered for the correct modeling of the device transport characteristics.

Download or read book Structural Characterization of Epitaxial Layers for Infrared Detectors written by and published by . This book was released on 1995 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt: UHV/CVD is a growth technique highly suitable for deposition of Ge(x)Si(1-x) heterostructures for long-wavelength infrared detectors. We have used transmission electron microscopy to determine favorable conditions for the growth of these structures. Multiple quantum well structures can be grown with excellent quality without any evidence of nonplanar growth while heterojunction internal photoemission structures incorporated thicker Ge(x)Si(1-x) layers do exhibit nonplanar growth. A modest decrease in growth temperature to 550 deg C is sufficient to solve the problem. jg p.1.

Download or read book Conventional and High resolution Transmission Electron Microscopy Study of Spin glass amorphous silicon Multilayers written by David A. Howell and published by . This book was released on 1995 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Study of Epitaxial Thin Films of Yba2cu3o7 Delta on Silicon with Different Buffer Layers written by Engang Fu and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Study of Epitaxial Thin Films of YBa2Cu3O7-[delta] on Silicon With Different Buffer Layers" by Engang, Fu, 付恩剛, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Abstract of thesis entitled STUDY OF EPITAXIAL THIN FILMS OF YBa Cu O ON 2 3 7-δ SILICON WITH DIFFERENT BUFFER LAYERS submitted by Fu Engang for the degree of Master of Philosophy at The University of Hong Kong in August 2005 Silicon is the most widely used semiconductor in the microelectronic industry. Highly epitaxial thin films of YBa Cu O (YBCO) grown on Si wafers are of 2 3 7-δ special interest for development of superconductor/semiconductor hybrid microelectronic devices and circuits. However, severe interaction between Si and YBCO layer, large mismatch in their lattice constant, and strain due to different thermal expansion often degrade the crystallinity and superconductivity of the grown YBCO layers. In this study, yttria-stabilized zirconia (YSZ) and Eu CuO (ECO) 2 4 were introduced as double buffer layers to improve the growth and properties of the YBCO thin films grown on silicon. Preparation and characterization of epitaxial YBCO/ECO/YSZ/Si multilayer structures were studied. YBCO thin films and the double buffer layers of ECO/YSZ were deposited on the silicon (100) substrate by the pulsed laser deposition (PLD) method. Firstly, the YSZ thin layer was grown epitaxially on silicon (100) substrate to separate YBCO from the Si substrate. Effects of substrate temperature and operating gas pressure on the structure and surface roughness of YSZ thin film were examined and the optimum deposition parameters were determined based on experimental results and comprehensive analysis. X-Ray diffraction (XRD) patterns and rocking curve revealed an epitaxial growth with a perfect c-axis orientation. The YSZ thin films grown on silicon substrate have smooth surface, providing a base on which ECO and YBCO thin film can be grown epitaxially. To further improve the quality of YBCO films, an additional layer of ECO with very stable 214-T' crystal structure was inserted between YBCO and YSZ/Si. The influence of substrate temperature and oxygen gas pressure on the properties of ECO thin films grown on YSZ/Si were experimentally analyzed and the growth conditions were optimized. Finally, the epitaxial YBCO thin films were grown on silicon substrate with double buffer layers of ECO/YSZ. The influences of substrate temperature, oxygen gas pressure and different buffer layers on the properties of YBCO thin films were studied. It was found that the crystal structure, surface roughness and superconductivity of YBCO films could be significantly improved by adding such a double buffer of ECO/YSZ. The quality of the YBCO thin films has been significantly enhanced when compared with that grown on Si with a single YSZ buffer layer and with double buffer layers of Nd CuO (NCO)/YSZ. Such highly 2 4 epitaxial thin films of YBCO grown on silicon should be of great interest for various applications including high-frequency elements, millimeter-wave receivers, and superconducting quantum interference devices. DOI: 10.5353/th_b3637488 Subjects: Thin films Silicon Epitaxy

Download or read book Scanning Transmission Electron Microscopy Studies of Silicon and Epitaxial Growth of Gold and Silver on H terminated Silicon written by Peirong Xu and published by . This book was released on 1991 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Metrology of Very Thin Silicon Epitaxial Films written by Weize Chen and published by . This book was released on 1998 with total page 169 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Simultaneous Determination of Specimen Composition and Thickness Using the Transmission Electron Microscope written by Gerben Boon and published by . This book was released on 2000 with total page 129 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Defects in Silicon germanium Strained Epitaxial Layers microform written by Mark Dynna and published by National Library of Canada = Bibliothèque nationale du Canada. This book was released on 1993 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Evaluation of Advanced Semiconductor Materials by Electron Microscopy written by David Cherns and published by . This book was released on 1990-01-01 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A Transmission Electron Microscopy Study of beta silicon Carbide Grown Epitaxially on Silicon written by Christopher Michael Chorey and published by . This book was released on 1987 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt: