Download or read book The Preparation of Al2O3 x SiO2 y Thin Films Using Al OSiEt3 3 2 as a Single Source Precursor written by and published by . This book was released on 1992 with total page 34 pages. Available in PDF, EPUB and Kindle. Book excerpt: Aluminum silicates, (Al2O3)x(SiO2)y, are attractive candidates as corrosion and wear-resistant coatings for metals and other substrates, due to their superior properties of creep resistance, thermal expansion, and chemical stability. Recently, it has been proposed that amorphous alumina-silica films would find application as insulators in multilevel interconnections, and as encapsulants for active devices and thin film components, because they do not suffer the temperature instability of alumina films while retaining the desirable insulating characteristics. Thin films of aluminum silicates have been previously prepared by either sol-gel techniques or the pyrolysis of aluminum-silicon containing polymers. However, there remain some difficulties in obtaining homogeneous and continuous films. Metal-organic chemical vapor deposition (MOCVD) offers and attractive alternative to these methods, since contiguous, homogeneous thin films can be deposited at low temperatures with high growth rates.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 804 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Download or read book Ceramic Abstracts written by and published by . This book was released on 1994 with total page 972 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Engineered Materials Abstracts written by and published by . This book was released on 1995-04 with total page 658 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metals Abstracts written by and published by . This book was released on 1995 with total page 636 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Government Reports Announcements Index written by and published by . This book was released on 1996 with total page 1428 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book ACS Directory of Graduate Research 1993 written by American Chemical Society. Committee on Professional Training and published by . This book was released on 1993 with total page 1700 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Government Reports Annual Index written by and published by . This book was released on 1992 with total page 1114 pages. Available in PDF, EPUB and Kindle. Book excerpt: Sections 1-2. Keyword Index.--Section 3. Personal author index.--Section 4. Corporate author index.-- Section 5. Contract/grant number index, NTIS order/report number index 1-E.--Section 6. NTIS order/report number index F-Z.
Download or read book Journal de physique written by and published by . This book was released on 2000 with total page 618 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Effect of Si and Y Additives on the Phase Stability of Al2O3 Thin Films written by Farwah Nahif and published by . This book was released on 2014-01-18 with total page 113 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book New Perspectives on Surface Passivation Understanding the Si Al2O3 Interface written by Lachlan E. Black and published by Springer. This book was released on 2016-04-15 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book addresses the problem of passivation at the surface of crystalline silicon solar cells. More specifically, it reports on a high-throughput, industrially compatible deposition method for Al2O3, enabling its application to commercial solar cells. One of the main focus is on the analysis of the physics of Al2O3 as a passivating dielectric for silicon surfaces. This is accomplished through a comprehensive study, which moves from the particular, the case of aluminium oxide on silicon, to the general, the physics of surface recombination, and is able to connect theory with practice, highlighting relevant commercial applications.
Download or read book Thin Films of Al2O3 and SiO2 Deposited on Si by CO2 laser Evaporation written by Nasser Madani and published by . This book was released on 1970 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Al 1tn2O 1tn3 Thin Films written by Kaiyun Jiang and published by . This book was released on 2011 with total page 109 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A New Commercializable Route for the Preparation of Single Source Precursors for Bulk Thin Film and Nanocrystallite I Iii Iv Semiconductors written by Kulbinder K. Banger and published by BiblioGov. This book was released on 2013-07 with total page 22 pages. Available in PDF, EPUB and Kindle. Book excerpt: We report a new simplified synthetic procedure for commercial manufacture of ternary single source precursors (SSP). This new synthetic process has been successfully implemented to fabricate known SSPs on bulk scale and the first liquid SSPs to the semiconductors CuInSe2 and AgIn(x)S(y). Single crystal X-ray determination reveals the first unsolvated ternary AgInS SSP. SSPs prepared via this new route have successfully been used in a spray assisted chemical vapor deposition (CVD) process to deposit polycrystalline thin films, and for preparing ternary nanocrystallites.
Download or read book Development and Applications of Oxide Thin Films Using Atomic Layer Deposition and Prompt Inorganic Condensation written by Sean Weston Smith and published by . This book was released on 2015 with total page 117 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the first part of this work, thin films of Al2O3 deposited via atomic layer deposition (ALD) are demonstrated to improve the thermal stability of cellulose nanocrystal (CNC) aerogels. ALD is a chemical vapor deposition (CVD) like method in which sequential precursor exposures and self-limited surface reactions produce a conformal thin film with precise thickness control. The conformal nature of ALD is well suited to coating the porous microstructure of aerogels. SEM micrographs of coating thickness depth profiles are shown to agree with trends predicted by precursor penetration models. Thermogravimetric analysis shows samples coated with ALD Al2O3 have increased decomposition temperatures. In the second part of this work, ALD zinc tin oxide (ZTO) is used to demonstrate a technique for measuring the substrate inhibited growth in multicomponent and laminate ALD systems. The thickness control of ALD makes it attractive for multicomponent and laminate systems. However, the surface reactions of ALD mean that the first few cycles, while the film nucleates, may have a different growth per cycle (GPC) than when the film is growing on itself in a bulk growth regime. A model for the substrate inhibited ALD of ZTO is derived from two complementary sets of laminates. The thickness and composition predictions of our model are tested against the bulk GPC of ZnO and SnO2. In the final part of this work, prompt inorganic condensation (PIC) is explored as a potentially more environmentally friendly alternative to ALD for planar thin film applications. Whereas ALD requires expensive vacuum systems and has low precursor utilization, solution based methods, such as PIC, allow atmospheric processing and precursor recycling. The water based PIC solutions use nitrate counter ions which evaporate at low temperatures. Combined with the low energy required to convert the hydroxide precursor clusters into an oxide film makes PIC a promising low temperature route to dense solution processed thin films. The dielectric performance of PIC Al2O3 is shown to be comparable to ALD Al2O3 films on Si though a large interfacial SiO2 layer is found to be dominating the behavior of the PIC films. This interfacial layer is shown to form very quickly (≤ 2 min) at low temperatures (≤ 50°C). This low temperature interfacial oxide growth could be a benefit in passivating solar cells.
Download or read book Practical Process Research and Development written by Neal G. Anderson and published by Academic Press. This book was released on 2012-05-23 with total page 489 pages. Available in PDF, EPUB and Kindle. Book excerpt: Designed to provide a comprehensive, step-by-step approach to organic process research and development in the pharmaceutical, fine chemical, and agricultural chemical industries, this book describes the steps taken, following synthesis and evaluation, to bring key compounds to market in a cost-effective manner. It describes hands-on, step-by-step, approaches to solving process development problems, including route, reagent, and solvent selection; optimising catalytic reactions; chiral syntheses; and "green chemistry." Second Edition highlights:• Reflects the current thinking in chemical process R&D for small molecules• Retains similar structure and orientation to the first edition. • Contains approx. 85% new material• Primarily new examples (work-up and prospective considerations for pilot plant and manufacturing scale-up)• Some new/expanded topics (e.g. green chemistry, genotoxins, enzymatic processes)• Replaces the first edition, although the first edition contains useful older examples that readers may refer to - Provides insights into generating rugged, practical, cost-effective processes for the chemical preparation of "small molecules" - Breaks down process optimization into route, reagent and solvent selection, development of reaction conditions, workup, crystallizations and more - Presents guidelines for implementing and troubleshooting processes
Download or read book Atomic Layer Deposition of Amorphous Hafnium based Thin Films with Enhance Thermal Stabilities written by Tuo Wang and published by . This book was released on 2010 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: The continuous scaling of microelectronic devices requires high permittivity (high-k) dielectrics to replace SiO2 as the gate material. HfO2 is one of the most promising candidates but the crystallization temperature of amorphous HfO2 is too low to withstand the fabrication process. To enhance the film thermal stability, HfO2 is deposited using atomic layer deposition (ALD), and incorporated with various amorphizers, such as La2O3, Al2O3, and Ta2O5. The incorporation is achieved by growing multiple ALD layers of HfO2 and one ALD layer of MO[subscript x] (M = La, Al, and Ta) alternately (denoted as [xHf + 1M]), and the incorporation concentration can be effectively controlled by the HfO2-to-MO[subscript x] ALD cycle ratio (the x value). The crystallization temperature of 10 nm HfO2 increases from 500 °C to 900 °C for 10 nm [xHf + 1M] film, where x = 3, 3, and 1 for M = La, Al, and Ta, respectively. The incorporation of La2O3, and Ta2O5 will not compromise the dielectric constant of the film because of the high-k nature of La2O3, and Ta2O5. Angle resolved X-ray photoelectron spectroscopy (AR-XPS) reveals that when the HfO2-to-MO[scubscript x] ALD cycle ratio is large enough (x> 3 and 4 for La and Al, respectively), periodic structures exist in films grown by this method, which are comprised of repeated M-free HfO2 ultrathin layers sandwiched between HfM[subscript x]O[scubscript y] layers. Generally, the film thermal stability increases with thinner overall thickness, higher incorporation concentration, and stronger amorphizing capability of the incorporated elements. When the x value is low, the films are more like homogeneous films, with thermal stabilities determined by the film thickness and the amorphizer. When the x value is large enough, the periodically-repeated structure may add an extra factor to stabilize the amorphous phase. For the same incorporation concentration, films with an appropriately high periodicity may have an increased thermal stability. The manner by which the periodic structure and incorporated element affect thermal stability is explored and resolved using nanolaminates comprised of alternating layers of [scubscript y]HfO2 and [xHf + 1M] x n, where y varied from 2 to 20, x varied from 1 to 2, and n varied from 4 to 22.
