Download or read book Organometallic Vapor Phase Epitaxy written by Gerald B. Stringfellow and published by Elsevier. This book was released on 2012-12-02 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the special structures required for device applications. In addition, a comprehensive summary detailing the OMVPE results observed to date in a wide range of III-V and II-VI semiconductors is provided. This includes a comparison of results obtained through the use of other epitaxial techniques such as molecular beam epitaxy (MBE), liquid-phase epitaxy (LPE), and vapor phase epitaxy using halide transport.

Download or read book The Organometallic Vapor Phase Epitaxial Growth of III V Metastable Alloys written by Meng-Jaw Cherng and published by . This book was released on 1987 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Organometallic Vapor Phase Epitaxial Growth of Bismuth containing III V Alloy Semiconductors written by Kevin Yan-Wing Ma and published by . This book was released on 1992 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Organometallic Vapor phase Epitaxial Growth and Characterization of III V Semiconductor Alloys Emitting Visible Light written by Diansheng Cao and published by . This book was released on 1991 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Metalorganic Vapor Phase Epitaxy MOVPE written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Download or read book Basic Principles of Organometallic Vapor Phase Epitaxy written by and published by . This book was released on 1992 with total page 22 pages. Available in PDF, EPUB and Kindle. Book excerpt: Crystal growth processes in general and epitaxy in particular are often discussed in terms three disciplines: thermodynamics, mass transport and hydrodynamics, and chemical reaction kinetics. This paper will concentrate on two of these, the thermodynamic and kinetic aspects of organometallic vapor phase epitaxy (OMVPE). Three major influences of thermodynamics will be discussed: (1) Thermodynamics defines the driving force and hence the upper limit of growth rate. This occurs only when all reactants in the system are allowed to equilibrate with the substrate. (2) Thermodynamics often controls stoichiometry and the solid composition of alloys. An understanding of thermodynamic and kinetic constraints leads to the ability to grow metastable alloys. (3) The driving force for phase separation and/or ordering into natural superlattice structures during growth is also governed by thermodynamics. The actual ordered structures observed are dependent on the surface kinetics. This aspect of kinetics will be addressed in addition to the kinetics of both homogeneous and heterogeneous chemical reactions occurring for a variety of precursor molecules. Each of these topics is addressed in terms of fundamental concepts, with examples from recent research on the OMVPE growth of III/V semiconductor compounds and alloys.

Download or read book Metal Organic Vapour Phase Epitaxy for the Growth of III V Semiconductor Structures written by Maarten Reinier Leys and published by . This book was released on 1990 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Organometallic Vapor Phase Epitaxial Growth of New III V Semiconductor Alloys written by Ming-Jiunn Jou and published by . This book was released on 1990 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book OMVPE Growth of InAsSbBi and Related Alloys Using New Organometallic Group V Sources written by and published by . This book was released on 1991 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt: The major goal of the project is the organometallic vapor phase epitaxial (OMVPE) growth of a new III/V. The alloy is metastable, but under the correct growth conditions we expect to be able to grow it by OMVPE. This apparently requires low growth temperatures of 250-350 C. Thus, new organometallic As and Sb precursors are being developed which pyrolyze at lower temperature than AsH3 and TMSb, the normal group V sources. In addition, Bi precursors must be synthesized.

Download or read book Metalorganic Vapor Phase Epitaxy MOVPE written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-08-27 with total page 584 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Download or read book Comparison of Epitaxial Growth Techniques for III V Layer Structures written by and published by . This book was released on 1992 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial processes are essential for the growth of III/V alloy semiconductors for electronic and photonic devices. For the growth of elaborately structured materials such as heterojunctions, quantum wells, and superlattices for the fabrication of the most advanced electronic and photonic devices, in particular, vapor phase growth processes have become standard. This paper will deal specifically with the epitaxial (mainly vapor phase) growth of III/V semiconductor materials. The approach taken here is somewhat non-traditional due to the recent hybridization of both precursor molecules and growth techniques. The distinctions between the various growth techniques are traditionally based on the nature of the precursor molecules. Chloride VPE uses chloride group III and and group V molecules and hydride VPE uses hydride group V precursors, while organometallic vapor phase epitaxy uses organometallic group III precursors and either hydride or organometallic group V precursors. Recently, we have developed group III precursors with both organic and Cl radicals on the same molecule. Similarly, group V precursors containing both organic and H radicals have been developed. Thus, it is unclear whether the techniques using such molecules should be called organometallic, chloride, or hydride VPE.

Download or read book Evaluation of Organometallic As and P Sources for the Growth of III V Semiconductors in Organometallic Vapor Phase Epitaxy written by Changhua Chen and published by . This book was released on 1990 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Organometallic Vapor Phase Epitaxy written by and published by . This book was released on 1992 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1993 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Mechanistic Study of Organometallic Vapor Phase Epitaxy written by and published by . This book was released on 1990 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt: Only AsH3 and PH3 have been used as the group V source molecules for organometallic vapor phase epitaxy (OMVPE) of III/V semiconductors until recently, since they have been the only precursors yielding device quality materials. This paper reviews recent work on the pyrolysis of individual organometallic molecules, with emphasis on the group V sources, including: (1) the methylarsines, di- and tri-methylarsine, (2) the ethylarsines, mono-, di-, and tri-ethylarsine, and (3) the singly substituted tertiarybutyl arsine and phosphine molecules. The pyrolysis and growth reactions occurring when both group III and group V precursors are present simultaneously, i.e., the reactions occuring during OMVPE growth of several III/V semiconductors, are also briefly reviewed.

Download or read book Liquid Phase Epitaxial Growth of III V Compound Semiconductor Materials and Their Device Applications written by M. G. Astles and published by CRC Press. This book was released on 1990 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: An introduction to the basic principles of the technique of liquid-phase epitaxy (LPE) as applied to the growth of the III-V family of compounds.

Download or read book Organometallic Vapor Phase Epitaxial Growth of High Purity GaInAs Using Trimethylindium written by and published by . This book was released on 1903 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: