Download or read book The Nucleation and Growth of Polycrystalline Silicon Carbide written by B.W. Sheldon and published by . This book was released on 1990 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nucleation and Growth During the Formation of Polycrystalline Silicon Thin Films written by Jens Michael Schneider and published by . This book was released on 2006 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of Polycrystalline Silicon and Microcrystalline Silicon Carbide Thin Films Using ECR PECVD written by Bryan Kent Oliver and published by . This book was released on 1999 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt: On the other hand, with He dilution at 15 mTorr the percent crystallinity obtained was also 86%, with decreasing crystallinity at lower pressures. We found that a dilution consisting of a 50%-50% mixture of H2-He, which allows a high ion bombardment deposition from the helium that is also benefited by the hydrogen etching effect, did not compromise the quality of the films. This plasma selection produced about 84% crystalline films, independent of the pressure setting. X-ray diffraction reveals the dominant crystal textures are 111 and 220 orientations, with 220 preferential growth at higher deposition pressures. The CH4/SiH4 flow ratio was found critical to the formation of microcrystalline SiC.
Download or read book Study of Nucleation and Growth of Polycrystalline CVD Diamond on Porous Silicon written by Moid Ahmed Khan and published by . This book was released on 1997 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Amorphous and Crystalline Silicon Carbide and Related Materials written by Gary L. Harris and published by Springer. This book was released on 1989-03-08 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt: Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications.
Download or read book Growth of 2H Silicon Carbide Crystals written by J. Anthony Powell and published by . This book was released on 1969 with total page 20 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book In Situ Studies of Defect Nucleation During the PVT and CVD Growth of Silicon Carbide Single Crystals written by and published by . This book was released on 2006 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt: A complete chemical vapor deposition (CVD) system for growing SiC epitaxial films and bulk crystals was set up using commercially procured gas flow controls and scrubber units, and integrating them with a modified in-house designed growth chamber that has options for in situ X-ray topographic study. This CVD system uses silicon tetrachloride (SiCl4), silane (SiH4), propane (C3H8), hydrogen (H2) and argon (Ar) gases. The aggressive SiCl4 corrosion in the chamber and the gas lines has been investigated and found to be predominantly related to moisture, and this severe problem has been solved by keeping the gas lines and the growth reactor in vacuum or in inert atmosphere when the CVD system is not running.
Download or read book Crystal Growth Technology written by Kullaiah Byrappa and published by Elsevier. This book was released on 2003-03-21 with total page 613 pages. Available in PDF, EPUB and Kindle. Book excerpt: Crystals are the unacknowledged pillars of modern technology. The modern technological developments depend greatly on the availability of suitable single crystals, whether it is for lasers, semiconductors, magnetic devices, optical devices, superconductors, telecommunication, etc. In spite of great technological advancements in the recent years, we are still in the early stage with respect to the growth of several important crystals such as diamond, silicon carbide, PZT, gallium nitride, and so on. Unless the science of growing these crystals is understood precisely, it is impossible to grow them as large single crystals to be applied in modern industry. This book deals with almost all the modern crystal growth techniques that have been adopted, including appropriate case studies. Since there has been no other book published to cover the subject after the Handbook of Crystal Growth, Eds. DTJ Hurle, published during 1993-1995, this book will fill the existing gap for its readers.The book begins with ""Growth Histories of Mineral Crystals"" by the most senior expert in this field, Professor Ichiro Sunagawa. The next chapter reviews recent developments in the theory of crystal growth, which is equally important before moving on to actual techniques. After the first two fundamental chapters, the book covers other topics like the recent progress in quartz growth, diamond growth, silicon carbide single crystals, PZT crystals, nonlinear optical crystals, solid state laser crystals, gemstones, high melting oxides like lithium niobates, hydroxyapatite, GaAs by molecular beam epitaxy, superconducting crystals, morphology control, and more. For the first time, the crystal growth modeling has been discussed in detail with reference to PZT and SiC crystals.
Download or read book Diamond Materials VI written by Jimmy Lee Davidson and published by The Electrochemical Society. This book was released on 2000 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt: "The sixth International Symposium on Diamond Materials was held at the 196th Meeting of the Electrochemical Society in Honolulu, Hawaii from Ooctober 17 to October 22, 1999"--Pref.
Download or read book Evolution of Thin Film and Surface Microstructure Volume 202 written by C. V. Thompson and published by . This book was released on 1991-05-31 with total page 770 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book Epitaxial Growth and Optoelectronic Characterization of Cubic Silicon Carbide Deposited Using Chemical Vapor Deposition on Porous Silicon written by Frederick Paul Vaccaro and published by . This book was released on 1999 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: Cubic silicon carbide is a promising material for applications in high-power, high-frequency, high-temperature, and high-speed electronic devices. Fourier Transform Infrared Spectroscopy (FTIR), Secondary Ion Mass Spectrometry (SIMS), X-Ray Diffraction (XRD) and Atomic Force Microscopy (AFM) evaluations performed on thin films grown heteroepitaxially on porous (i.e. anodized) silicon using a new chemical vapor deposition (CVD) method employing trimethylsilane confirmed that the thin films were stoichiometric, cubic silicon carbide (3C-SiC). Conclusions were drawn on the basis of comparisons with published standards as well as with results generated on reference materials. SIMS profiles revealed the growth rates at approximately 1150̊C to vary from 2.1 to 4.0 Å/min. depending upon the slight variations in the CVD process trimethylsilane gas pressure. AFM evaluations revealed that the deposition mode at short deposition times was homo-oriented island nucleation and growth but that the 3C-SiC thin films evolved into continuous terraced layers at longer deposition times. Heterojunction (pn) junction diodes, fabricated from CVD and chemical vapor converted (CVC) porous silicon specimens, displayed world record breakdown voltages as high as 140 volts and 150 volts respectively. Historically, heterojunction (pn) junction diodes fabricated from 3C-SiC thin film specimens deposited on non-anodized displayed breakdown voltages below 10 to 20 volts.
Download or read book Crystal Growth written by Vadim Glebovsky and published by BoD – Books on Demand. This book was released on 2019-11-06 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this book, a variety of topics related to crystal growth is extensively discussed. The topics encompass the physics of growing single crystals of different functional materials, single-crystalline thin films, and even the features of crystallization of biofats and oils. It is intended to provide information on advancements in technologies for crystal growth to physicists, researches, as well as engineers working with single-crystalline functional materials.
Download or read book Energy Research Abstracts written by and published by . This book was released on 1993 with total page 622 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Unique High temperature High pressure Crystal Growth System for Silicon Carbide written by J. R. Littler and published by . This book was released on 1973 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt: A high-pressure, high-temperature furnace system is described for crystal growth experiments using crucibles up to 13 cm in diameter and 26 cm high. The vertical temperature gradient is electronically controlled during growth such that the ends of the crucible can be maintained at temperatures above or below the crucible center. Temperatures up to 2800C can be maintained at pressures up to 50 atmospheres. A vacuum capability up to .000001 torr at 1800C has been incorporated into the system. Single crystals of alpha silicon carbide grown in this system at 2600C are described to illustrate its use. (Author).
Download or read book Aluminum Compounds Advances in Research and Application 2013 Edition written by and published by ScholarlyEditions. This book was released on 2013-06-21 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt: Aluminum Compounds—Advances in Research and Application: 2013 Edition is a ScholarlyBrief™ that delivers timely, authoritative, comprehensive, and specialized information about ZZZAdditional Research in a concise format. The editors have built Aluminum Compounds—Advances in Research and Application: 2013 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about ZZZAdditional Research in this book to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Aluminum Compounds—Advances in Research and Application: 2013 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.
Download or read book Springer Handbook of Surface Science written by Mario Rocca and published by Springer Nature. This book was released on 2021-01-14 with total page 1273 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook delivers an up-to-date, comprehensive and authoritative coverage of the broad field of surface science, encompassing a range of important materials such metals, semiconductors, insulators, ultrathin films and supported nanoobjects. Over 100 experts from all branches of experiment and theory review in 39 chapters all major aspects of solid-state surfaces, from basic principles to applications, including the latest, ground-breaking research results. Beginning with the fundamental background of kinetics and thermodynamics at surfaces, the handbook leads the reader through the basics of crystallographic structures and electronic properties, to the advanced topics at the forefront of current research. These include but are not limited to novel applications in nanoelectronics, nanomechanical devices, plasmonics, carbon films, catalysis, and biology. The handbook is an ideal reference guide and instructional aid for a wide range of physicists, chemists, materials scientists and engineers active throughout academic and industrial research.
