Download or read book The Materials Properties and Microwave Performance of the Gallium Arsenide Power MESFET written by Jaime Gonsalves Tenedorio and published by . This book was released on 1982 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Microwave Performance of Medium and High Power GaAs MESFET s written by Abigail O'Connell Tenedorio and published by . This book was released on 1982 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book RF and Microwave Semiconductor Device Handbook written by Mike Golio and published by CRC Press. This book was released on 2017-12-19 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering a single volume reference for high frequency semiconductor devices, this handbook covers basic material characteristics, system level concerns and constraints, simulation and modeling of devices, and packaging. Individual chapters detail the properties and characteristics of each semiconductor device type, including: Varactors, Schottky diodes, transit-time devices, BJTs, HBTs, MOSFETs, MESFETs, and HEMTs. Written by leading researchers in the field, the RF and Microwave Semiconductor Device Handbook provides an excellent starting point for programs involving development, technology comparison, or acquisition of RF and wireless semiconductor devices.

Download or read book Electronic Materials Handbook written by and published by ASM International. This book was released on 1989-11-01 with total page 1234 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume 1: Packaging is an authoritative reference source of practical information for the design or process engineer who must make informed day-to-day decisions about the materials and processes of microelectronic packaging. Its 117 articles offer the collective knowledge, wisdom, and judgement of 407 microelectronics packaging experts-authors, co-authors, and reviewers-representing 192 companies, universities, laboratories, and other organizations. This is the inaugural volume of ASMAs all-new ElectronicMaterials Handbook series, designed to be the Metals Handbook of electronics technology. In over 65 years of publishing the Metals Handbook, ASM has developed a unique editorial method of compiling large technical reference books. ASMAs access to leading materials technology experts enables to organize these books on an industry consensus basis. Behind every article. Is an author who is a top expert in its specific subject area. This multi-author approach ensures the best, most timely information throughout. Individually selected panels of 5 and 6 peers review each article for technical accuracy, generic point of view, and completeness.Volumes in the Electronic Materials Handbook series are multidisciplinary, to reflect industry practice applied in integrating multiple technology disciplines necessary to any program in advanced electronics. Volume 1: Packaging focusing on the middle level of the electronics technology size spectrum, offers the greatest practical value to the largest and broadest group of users. Future volumes in the series will address topics on larger (integrated electronic assemblies) and smaller (semiconductor materials and devices) size levels.

Download or read book The RF and Microwave Handbook written by Mike Golio and published by CRC Press. This book was released on 2000-12-20 with total page 1377 pages. Available in PDF, EPUB and Kindle. Book excerpt: The recent shift in focus from defense and government work to commercial wireless efforts has caused the job of the typical microwave engineer to change dramatically. The modern microwave and RF engineer is expected to know customer expectations, market trends, manufacturing technologies, and factory models to a degree that is unprecedented in the

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fundamentals of RF and Microwave Transistor Amplifiers written by Inder Bahl and published by John Wiley & Sons. This book was released on 2009-06-17 with total page 696 pages. Available in PDF, EPUB and Kindle. Book excerpt: A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help readers test their basic amplifier and circuit design skills-and more than half of the problems feature fully worked-out solutions. With an emphasis on theory, design, and everyday applications, this book is geared toward students, teachers, scientists, and practicing engineers who are interested in broadening their knowledge of RF and microwave transistor amplifier circuit design.

Download or read book The RF and Microwave Handbook 3 Volume Set written by Mike Golio and published by CRC Press. This book was released on 2018-10-08 with total page 2208 pages. Available in PDF, EPUB and Kindle. Book excerpt: By 1990 the wireless revolution had begun. In late 2000, Mike Golio gave the world a significant tool to use in this revolution: The RF and Microwave Handbook. Since then, wireless technology spread across the globe with unprecedented speed, fueled by 3G and 4G mobile technology and the proliferation of wireless LANs. Updated to reflect this tremendous growth, the second edition of this widely embraced, bestselling handbook divides its coverage conveniently into a set of three books, each focused on a particular aspect of the technology. Six new chapters cover WiMAX, broadband cable, bit error ratio (BER) testing, high-power PAs (power amplifiers), heterojunction bipolar transistors (HBTs), as well as an overview of microwave engineering. Over 100 contributors, with diverse backgrounds in academic, industrial, government, manufacturing, design, and research reflect the breadth and depth of the field. This eclectic mix of contributors ensures that the coverage balances fundamental technical issues with the important business and marketing constraints that define commercial RF and microwave engineering. Focused chapters filled with formulas, charts, graphs, diagrams, and tables make the information easy to locate and apply to practical cases. The new format, three tightly focused volumes, provides not only increased information but also ease of use. You can find the information you need quickly, without wading through material you don’t immediately need, giving you access to the caliber of data you have come to expect in a much more user-friendly format.

Download or read book American Doctoral Dissertations written by and published by . This book was released on 1983 with total page 540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nonuniformly Doped Gallium Arsenide Microwave Power MESFETS written by Seno Judaprawira and published by . This book was released on 1981 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book RF and Microwave Passive and Active Technologies written by Mike Golio and published by CRC Press. This book was released on 2018-10-03 with total page 736 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the high frequency world, the passive technologies required to realize RF and microwave functionality present distinctive challenges. SAW filters, dielectric resonators, MEMS, and waveguide do not have counterparts in the low frequency or digital environment. Even when conventional lumped components can be used in high frequency applications, their behavior does not resemble that observed at lower frequencies. RF and Microwave Passive and Active Technologies provides detailed information about a wide range of component technologies used in modern RF and microwave systems. Updated chapters include new material on such technologies as MEMS, device packaging, surface acoustic wave (SAW) filters, bipolar junction and heterojunction transistors, and high mobility electron transistors (HMETs). The book also features a completely rewritten section on wide bandgap transistors.

Download or read book Dissertation Abstracts International written by and published by . This book was released on 1982 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book MICROWAVE DEVICES AND CIRCUIT DESIGN written by GANESH PRASAD SRIVASTAVA and published by PHI Learning Pvt. Ltd.. This book was released on 2006-01-01 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook presents a unified treatment of theory, analysis and design of microwave devices and circuits. It is designed to address the needs of undergraduate students of electronics and communi-cation engineering for a course in microwave engineering as well as those of the students pursuing M.Sc. courses in electronics science. The main objective is to provide students with a thorough under-standing of microwave devices and circuits, and to acquaint them with some of the methods used in circuit analysis and design. Several types of planar transmission lines such as stripline, microstrip, slot line and a few other structures have been explained. The important concepts of scattering matrix and Smith chart related to design problems have been discussed in detail. The performance and geometry of microwave transistors-both bipolar and field effect-have been analysed. Microwave passive components such as couplers, power dividers, attenuators, phase shifters and circulators have been comprehensively dealt with. Finally, the analysis and design aspects of microwave transistor amplifiers and oscillators are presented using the scattering parameters technique. Numerous solved problems and chapter-end questions are included for practice and reinforcement of the concepts.

Download or read book High Efficiency RF and Microwave Solid State Power Amplifiers written by Paolo Colantonio and published by John Wiley & Sons. This book was released on 2009-07-08 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: Do you want to know how to design high efficiency RF and microwave solid state power amplifiers? Read this book to learn the main concepts that are fundamental for optimum amplifier design. Practical design techniques are set out, stating the pros and cons for each method presented in this text. In addition to novel theoretical discussion and workable guidelines, you will find helpful running examples and case studies that demonstrate the key issues involved in power amplifier (PA) design flow. Highlights include: Clarification of topics which are often misunderstood and misused, such as bias classes and PA nomenclatures. The consideration of both hybrid and monolithic microwave integrated circuits (MMICs). Discussions of switch-mode and current-mode PA design approaches and an explanation of the differences. Coverage of the linearity issue in PA design at circuit level, with advice on low distortion power stages. Analysis of the hot topic of Doherty amplifier design, plus a description of advanced techniques based on multi-way and multi-stage architecture solutions. High Efficiency RF and Microwave Solid State Power Amplifiers is: an ideal tutorial for MSc and postgraduate students taking courses in microwave electronics and solid state circuit/device design; a useful reference text for practising electronic engineers and researchers in the field of PA design and microwave and RF engineering. With its unique unified vision of solid state amplifiers, you won’t find a more comprehensive publication on the topic.

Download or read book Nitride Wide Bandgap Semiconductor Material and Electronic Devices written by Yue Hao and published by CRC Press. This book was released on 2016-11-03 with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

Download or read book Technology for the United States Navy and Marine Corps 2000 2035 Becoming a 21st Century Force written by National Research Council and published by National Academies Press. This book was released on 1997-12-19 with total page 353 pages. Available in PDF, EPUB and Kindle. Book excerpt: The future national security environment will present the naval forces with operational challenges that can best be met through the development of military capabilities that effectively leverage rapidly advancing technologies in many areas. The panel envisions a world where the naval forces will perform missions in the future similar to those they have historically undertaken. These missions will continue to include sea control, deterrence, power projection, sea lift, and so on. The missions will be accomplished through the use of platforms (ships, submarines, aircraft, and spacecraft), weapons (guns, missiles, bombs, torpedoes, and information), manpower, materiel, tactics, and processes (acquisition, logistics,and so on.). Accordingly, the Panel on Technology attempted to identify those technologies that will be of greatest importance to the future operations of the naval forces and to project trends in their development out to the year 2035. The primary objective of the panel was to determine which are the most critical technologies for the Department of the Navy to pursue to ensure U.S. dominance in future naval operations and to determine the future trends in these technologies and their impact on Navy and Marine Corps superiority. A vision of future naval operations ensued from this effort. These technologies form the base from which products, platforms, weapons, and capabilities are built. By combining multiple technologies with their future attributes, new systems and subsystems can be envisioned. Technology for the United States Navy and Marine Corps, 2000-2035 Becoming a 21st-Century Force:Volume 2: Technology indentifies those technologies that are unique to the naval forces and whose development the Department of the Navy clearly must fund, as well as commercially dominated technologies that the panel believes the Navy and Marine Corps must learn to adapt as quickly as possible to naval applications. Since the development of many of the critical technologies is becoming global in nature, some consideration is given to foreign capabilities and trends as a way to assess potential adversaries' capabilities. Finally, the panel assessed the current state of the science and technology (S&T) establishment and processes within the Department of the Navy and makes recommendations that would improve the efficiency and effectiveness of this vital area. The panel's findings and recommendations are presented in this report.

Download or read book Electrical Characteristics of MESFETs and HEMTs written by Moumita Bhoumik and published by GRIN Verlag. This book was released on 2013-11-05 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt: Master's Thesis from the year 2012 in the subject Electrotechnology, grade: 9.36, West Bengal University of Technology, course: M.TECH IN ADVANCE COMMUNICATION, language: English, abstract: Advanced developments that were made recently in the field of Silicon (Si) semiconductor technology have allowed it to approach the theoretical limits of the Si material. However there are latest power device requirements for many applications that cannot be handled by the present Si-based power devices. These requirements include such as higher blocking voltages, switching frequencies, efficiency, and reliability. And hence, new semiconductor materials for power device applications are needed to overcome these limitations. For high power requirements, wide bandgap semiconductors like Silicon Carbide (SiC) and Gallium Nitride (GaN) and Gallium Arsenide (GaAs), which are having superior electrical properties, are likely to replace Si in the near future. This Study thesis compares the electrical characteristics of wide-bandgap semiconductors with respect to Silicon (Si) to verify their superior utility for power applications and predicts the future of power device semiconductor materials. This thesis also includes the study that has been performed regarding the electrical characteristics of high frequency semiconductor devices in terms of I-V characteristics and Noise Power Spectral Density (PSD) Analysis with respect to drain current fluctuation in the semiconductor devices. The semiconductor devices that are used for this particular thesis are – Metal Effect Semiconductor Field Effect Transistors (MESFETs) and High Electron Mobility Transistors (HEMTs).