Download or read book The Growth and Characterization of Silicon Nanowires written by Parul Sharma and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Semiconducting Silicon Nanowires for Biomedical Applications written by Jeffery L. Coffer and published by Woodhead Publishing. This book was released on 2021-09-14 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: In its second, extensively revised second edition, Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and biomedical applications of this key material. The book begins by reviewing the basics of growth, characterization, biocompatibility, and surface modification of semiconducting silicon nanowires. Attention then turns to use of these structures for tissue engineering and delivery applications, followed by detection and sensing. Reflecting the evolution of this multidisciplinary subject, several new key topics are highlighted, including our understanding of the cell-nanowire interface, latest advances in associated morphologies (including silicon nanoneedles and nanotubes for therapeutic delivery), and significantly, the status of silicon nanowire commercialization in biotechnology. Semiconducting Silicon Nanowires for Biomedical Applications is a comprehensive resource for biomaterials scientists who are focused on biosensors, drug delivery, and the next generation of nano-biotech platforms that require a detailed understanding of the cell-nanowire interface, along with researchers and developers in industry and academia who are concerned with nanoscale biomaterials, in particular electronically-responsive structures. - Reviews the growth, characterization, biocompatibility, and surface modification of semiconducting silicon nanowires - Describes silicon nanowires for tissue engineering and delivery applications, including cellular binding & internalization, tissue engineering scaffolds, mediated differentiation of stem cells, and silicon nanoneedles & nanotubes for delivery of small molecule / biologic-based therapeutics - Highlights the use of silicon nanowires for detection and sensing - Presents a detailed description of our current understanding of the cell-nanowire interface - Covers the current status of commercial development of silicon nanowire-based platforms

Download or read book The growth and characterization of silicon nanowires carbon nanotubes for heterojunctions written by Parul Sharma and published by . This book was released on 2011 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth and Characterization of Silicon Nanowires for Solar Cell Applications written by Hanaa Flayeh Al-Taay and published by . This book was released on 2014 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Localized Growth and Characterization of Silicon Nanowires written by Tao Xu and published by . This book was released on 2009 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt: Les nanofils de silicium semblent très prometteurs pour utilisation comme éléments d'assemblage des composants à l'échelle nanométrique grâce à leur compatibilité avec la technologie conventionnelle du silicium. Ce travail de thèse se focalise sur la croissance épitaxialle et la caractérisation de nanofils de silicium. Dans la première partie, les nanofils de silicium sont fabriqués par la méthode Vapeur-liquide-Solide (VLS) à partir de catalyseurs d'or, en utilisant deux techniques: dépôt chimique en phase vapeur (CVD) et épitaxie par jets moléculaire (MBE). Les catalyseurs d'or sont déposés sur le substrat de Si (111) en ultravide pour avoir un meilleur contrôle de leur distribution. La morphologie et la direction de croissance de nanofils ont été contrôlées en ajustant les paramètres de croissance. De plus, l'orientation de nanofils dans la direction 111 favorise l'intégration de nanofils dans les composants, alors que les dopants peuvent être incorporés en utilisant les gaz appropriés. Dans la deuxième partie, nous avons réussi à observer les structures atomiques de la surface de nanofils orientés 111 par microscopie à l'effet tunnel (STM) à basse température. Ensuite, les mécanismes physiques concernant l'origine de la morphologie de nanofils ont été étudiés En plus de l'analyse de la surface de nanofils, la tomographie par sonde atomique (TAP) a été utilisée pour caractériser la distribution des impuretés dans le volume de nanofils de silicium dopés au bore. Enfin, les résultats ont été comparés avec les conductivités mesurées sur les nanofils individuels.

Download or read book Silicon and Silicide Nanowires written by Yu Huang and published by CRC Press. This book was released on 2016-04-19 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoscale materials are showing great promise in various electronic, optoelectronic, and energy applications. Silicon (Si) has especially captured great attention as the leading material for microelectronic and nanoscale device applications. Recently, various silicides have garnered special attention for their pivotal role in Si device engineering

Download or read book Copye van het vonnis uytgesproken by Schepenen van der Keure der stad Gend tot laste van Jacobus Janssens ge xecuteert den 17 July 1790 written by and published by . This book was released on 1790 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth and Characterization of Silicon Carbide Thin Films and Nanowires written by Lunet Estefany Luna and published by . This book was released on 2016 with total page 109 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide (SiC) based electronics and sensors hold promise for pushing past the limits of current technology to achieve small, durable devices that can function in high-temperature, high-voltage, corrosive, and biological environments. SiC is an ideal material for such conditions due to its high mechanical strength, excellent chemical stability, and its biocompatibility. Consequently, SiC thin films and nanowires have attracted interest in applications such as micro- and nano-electromechanical systems, biological sensors, field emission cathodes, and energy storage devices. In terms of high-temperature microdevices, maintaining low-resistance electrical contact between metal and SiC remains a challenge. Although SiC itself maintains structural and electrical stability at high temperatures, the metallization schemes on SiC can suffer from silicide formation and oxidation when exposed to air. The second chapter presents efforts to develop stable metallization schemes to SiC. A stack consisting of Ni-induced solid-state graphitization of SiC and an atomic layer deposited layer of alumina is shown to yield low contact resistivity of Pt/Ti to polycrystalline n-type 3C-SiC films that is stable in air at 450 oC for 500 hours. The subsequent chapters focus on the growth and structural characterization of SiC nanowires. In addition to its structural stability in harsh-environments, there is interest in controlling SiC crystal structure or polytype formation. Over 200 different polytypes have been reported for SiC, with the most common being 3C, 4H, and 2H. In terms of SiC nanowire growth, the 3C or cubic phase is the most prevalent. However, as the stacking fault energy for SiC is on the order of a few meV, it is common to have a high density of stacking faults within a given SiC crystal structure. Thus, to enable reliable performance of SiC nanowires, a growth method that can promote a specific polytype or reduce stacking faults is of importance. Ni-catalyzed chemical vapor deposition method is employed for the growth of the nanowires. The effects of substrate structure and quality as well as the various growth parameters such as temperature, pressure, and post-deposition annealing are investigated. Most significant has been the growth and characterization of vertically aligned hexagonal phase (or 4H-like) SiC nanowires grown on commercially available 4H-SiC (0001). The studies presented in this thesis tackle issues in SiC metallization and nanowire growth in efforts to expand the versatility of SiC as a material platform for novel devices.

Download or read book Semiconductor Nanowires written by J Arbiol and published by Elsevier. This book was released on 2015-03-31 with total page 573 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor nanowires promise to provide the building blocks for a new generation of nanoscale electronic and optoelectronic devices. Semiconductor Nanowires: Materials, Synthesis, Characterization and Applications covers advanced materials for nanowires, the growth and synthesis of semiconductor nanowires—including methods such as solution growth, MOVPE, MBE, and self-organization. Characterizing the properties of semiconductor nanowires is covered in chapters describing studies using TEM, SPM, and Raman scattering. Applications of semiconductor nanowires are discussed in chapters focusing on solar cells, battery electrodes, sensors, optoelectronics and biology. - Explores a selection of advanced materials for semiconductor nanowires - Outlines key techniques for the property assessment and characterization of semiconductor nanowires - Covers a broad range of applications across a number of fields

Download or read book Synthesis and Characterization of Silicon Nanowires and Silicon Nanowire Based Field Effect Transistor written by Jing Lei Xiang and published by . This book was released on 2008 with total page 41 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication and Characterization of Silicon Nanowires written by Vikram Passi and published by LAP Lambert Academic Publishing. This book was released on 2012-07 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt: When dimensions of material approach nanoscale, they often reveal startling properties. These unique properties when compared to bulk material make them interesting candidates for new technologies. In a race to sustain Moore's Law, silicon nanowires which possess remarkable properties diverse from bulk-silicon have gained notable attention. With advancement in technology engineers have mastered the art of fabrication of nanowires, but there exists a big gap in understanding various phenomena at this scale. The aim of this work is to bridge the gap and give an insight into some interesting properties and application of silicon nanowires. Using top-down lithography Silicon nanowires are fabricated and various mechanical and electrical properties are studied. The use of functionalized silicon nanowires for gas detection is demonstrated with very large sensitivity and detection window reported for the first time.

Download or read book Synthesis Characterization and Integration of Silicon Nanowires for Nanosystems Technology written by Gregory Stephen Doerk and published by . This book was released on 2010 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon's chemical stability, high natural abundance (as the second most common element in the earth's crust), mechanical stiffness, and semiconducting behavior have made it the subject of extensive scientific investigation and the material of choice for both the microelectronics and microelectromechanical device industries. The success of Moore's Law that demands continual size reduction has directed it to a central place in emerging nanoscience and nanotechnology as well. Crystalline nanowires (NWs) are one nanostructured form that silicon may take that has sparked significant interest as they can exhibit considerable confinement effects and high surface-to-volume ratios, but may be interfaced simply along one direction for the determination of material properties and implementation into new technologies. The expense and difficulty involved in the creation of semiconductor nanowires using the "top down" fabrication techniques of the microelectronics industry has promoted an explosion of chemical synthetic "bottom up" techniques to produce high quality crystalline nanowires in large quanitities. Nevertheless, bottom up synthesized Si NWs retain a new set of challenges for their successful integration into reliable, high-performance devices, which is hindered by an incomplete understanding of the factors controlling their material properties. The first chapter of this dissertation introduces the motivation for studying semiconductor NWs and the benefits of limiting the scope to silicon alone. A brief survey of the current understanding of thermal conductivity in silicon nanowires provides prime examples of how confinement effects and surface morphology may dramatically alter nanowire properties from their bulk crystal counterparts. The particular challenges to bottom up silicon nanowire device integration and characterization are noted, especially related to Si nanowires that are grown epitaxially on crystal silicon substrates, and Raman spectroscopy is introduced as a promising optical characterization and metrology tool for semiconductor nanowire based devices. Chapter two describes the vapor-liquid-solid (VLS) mechanism for the synthesis of very high quality, single-crystal silicon nanowires using Au and Pt catalyst nanoparticles. A new technique is presented for the simplified synthesis of branched silicon nanowires based on the migration of Au catalyst during an hydrogen anneal intermediate between growth stages, and the faceting behavior at synthetic stages is revealed by the analysis of electron microscope images. Synthesis of solid and porous Si nanowires based on Ag mediated electrochemical silicon etching is described as well. The third chapter specifies new processing techniques developed with future device integration of epitaxially VLS-grown Si nanowires in mind. Epitaxially bridging nanowires are shown to provide an excellent platform for single-wire electrical and mechanical property measurements. Galvanic displacement through block copolymer micelle/homopolymer surface templates is demonstrated as a means to deposit catalyst nanoparticles with controlled sizes and areal densities in a variety of geometries and with registration to photolithographic patterns. Ex situ boron doping by the direct hydrogen reduction of boron tribromide is shown to achieve active concentrations exceeding 1019 cm-3 with high axial uniformity, while avoiding the adverse impact on nanowire morphology that is often observed with in situ boron doping of silicon nanowires. Chapter four describes the characteristics of Raman spectroscopy that are relevant to studying individual semiconductor nanowires. Careful spectral measurements show that the anharmonic dependence of Raman spectra on temperature for individual Si nanowires remains unchanged from the bulk crystal for diameters down to 30 nm, regardless of surface morphology. Using this result, a new technique for measuring the thermal conductivity of individual semiconductor nanowires is then outlined based on Raman thermal mapping of individual cantilevered nanowires. Finally, the dissertation is concluded with suggestions for possible future experiments. One avenue is to probe more deeply the morphology of faceted silicon nanowires and nanotrees and its impact on their transport physics. Another possible route for further study would be to explore new characterization and metrological applications of Raman spectrocopy for semiconductor nanowires.

Download or read book Fabrication and Optical Characterization of Silicon Nanowires written by Martin Gotza and published by . This book was released on 1997 with total page 161 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Inorganic Nanowires written by M. Meyyappan and published by CRC Press. This book was released on 2018-09-03 with total page 454 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in nanofabrication, characterization tools, and the drive to commercialize nanotechnology products have contributed to the significant increase in research on inorganic nanowires (INWs). Yet few if any books provide the necessary comprehensive and coherent account of this important evolution. Presenting essential information on both popular and emerging varieties, Inorganic Nanowires: Applications, Properties, and Characterization addresses the growth, characterization, and properties of nanowires. Author Meyyappan is the director and senior scientist at Ames Center for Nanotechnology and a renowned leader in nanoscience and technology, and Sunkara is also a major contributor to nanowire literature. Their cutting-edge work is the basis for much of the current understanding in the area of nanowires, and this book offers an in-depth overview of various types of nanowires, including semiconducting, metallic, and oxide varieties. It also includes extensive coverage of applications that use INWs and those with great potential in electronics, optoelectronics, field emission, thermoelectric devices, and sensors. This invaluable reference: Traces the evolution of nanotechnology and classifies nanomaterials Describes nanowires and their potential applications to illustrate connectivity and continuity Discusses growth techniques, at both laboratory and commercial scales Evaluates the most important aspects of classical thermodynamics associated with the nucleation and growth of nanowires Details the development of silicon, germanium, gallium arsenide, and other materials in the form of nanowires used in electronics applications Explores the physical, electronic and other properties of nanowires The explosion of nanotechnology research activities for various applications is due in large part to the advances in the growth of nanowires. Continued development of novel nanostructured materials is essential to the success of so many economic sectors, ranging from computing and communications to transportation and medicine. This volume discusses how and why nanowires are ideal candidates to replace bulk and thin film materials. It covers the principles behind device operation and then adds a detailed assessment of nanowire fabrication, performance results, and future prospects and challenges, making this book a valuable resource for scientists and engineers in just about any field. Co-author Meyya Meyyappan will receive the Pioneer Award in Nanotechnology from the IEEE Nanotechnology Council at the IEEE Nano Conference in Portland, Oregon in August, 2011

Download or read book Synthesis and Characterization of Silicon Nanowires Silicon Nanorods and Magnetic Nanocrystals written by Andrew Theron Heitsch and published by . This book was released on 2010 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon nanowires, silicon nanorods, and magnetic nanocrystals have shown interesting size, shape, mechanical, electronic, and/or magnetic properties and many have proposed their use in exciting applications. However, before these materials can be applied, it is critical to fully understand their properties and how to synthesize them economically and reproducibly. Silicon nanowires were synthesized in high boiling point ambient pressure solvents using gold and bismuth nanocrystals seeds and trisilane as the silicon precursor. Reactions temperatures as low as 410°C were used to promote the solution-liquid-solid (SLS) growth of silicon nanowires. The silicon nanowires synthesis was optimized to produce 5 mg of silicon nanowires with average diameters of 30 nm and lengths exceeding 2 [mu]m by adjusting the silicon to gold ratio in the injection mixture and reaction temperature. Silicon nanorods were synthesized using a solution-based arrested-SLS growth approach where gold seeds, trisilane, and a dodecylamine were vital to the success. Dodecylamine was found to prevent gold seed coalescence at high temperatures -- creating small diameter rods -- and bond to the crystalline silicon surface -- preventing silicon nanorod aggregation. Furthermore, an etching strategy was developed using an emulsion of aqua regia and chloroform to remove the gold seeds from the silicon nanorods tip. A thin silicon shell surrounding the gold seed of the silicon nanorod was subsequently observed. Multifunctional colloidal core-shell nanoparticles of iron platinum or iron oxide encapsulated in fluorescent dye doped silica shells were also synthesized. The as-prepared magnetic nanocrystals are initially hydrophobic and were coated with a uniform silica shell using a microemulsion approach. These colloidal heterostructures have the potential to be used as dual-purpose tags, exhibiting a fluorescent signal that could be combined with enhanced magnetic resonance imaging contrast. Compositionally-ordered, single domain, antiferromagnetic L12 FePt3 and ferromagnetic L10 FePt nanocrystals were synthesized by coating colloidally-grown Pt-rich or stoichiometricly equal Fe-Pt nanocrystals with thermally-stable SiO2 and annealing at high temperature. Without the silica coating, the nanocrystals transform predominately into the L10 FePt phase due to interparticle diffusion of Fe and Pt atoms. Magnetization measurements of the L12 FePt3 nanocrystals revealed two antiferromagnetic transitions near the bulk Neél temperatures of 100K and 160K. Combining L12 FePt3 nanocrystals with L10 FePt nanocrystals was found to produce a constriction in field-dependent magnetization loops that has previously been observed near zero applied field in ensemble measurements of single domain silica-coated L10 FePt nanocrystals. Dipole interactions between FePt@SiO2 nanoparticles with varying SiO2 shell thickness was also explored.

Download or read book Characterization Morphology Oxidation and Recession of Silicon Nanowires Grown by Electroless Process written by Robert G. Mertens and published by . This book was released on 2012 with total page 97 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation presents heretofore undiscovered properties of Silicon Nanowires (SiNWs) grown by electroless process and presents mathematical solutions to the special problems of the oxidation and diffusion of dopants for SiNWs. Also presented here is a mathematical description of morphology of oxidized SiNWs. This dissertation is comprised of several discussions relating to SiNWs growth, oxidation, morphology and doping. In here is presented work derived from a long-term study of SiNWs. Several important aspects of SiNWs were investigated and the results published in journals and conference papers. The recession of SiNWs was heretofore unreported by other research groups. In our investigations, this began as a question, "How far into the substrate does the etching process go when this method is used to make SiNWs?" Our investigations showed that recession did take place, was controllable and that a number of variables were responsible. The growth mechanism of SiNWs grown by electroless process is discussed at length. The relation of exposed area to volume of solution is shown, derived from experimentation. A relation of Silver used to Si removed is presented, derived from experimentation. The agglomeration of SiNWs grown by the electroless process is presented. The oxidation of SiNWs is a subject of interest to many groups, although most other groups work with SiNWs grown by the VLS process, which is more difficult, time-consuming and expensive to do. The oxidation of planar Silicon (Si) is still a subject of study, even today, after many years of working with and refining our formulae, because of the changing needs of this science and industry. SiNWs oxidation formulae are more complicated than those for planar Si, partly because of their morphology and partly because of their scale. While planar Si only presents one orientation for oxidation, SiNWs present a range of orientations, usually everything between [left angle bracket]100[right angle bracket] and [left angle bracket]110[right angle bracket] (the [left angle bracket]111[right angle bracket] orientation is usually not presented during oxidation). This complicates the post-oxidation morphology to the extent that, subsequent to oxidation, SiNWs are more rectangular than cylindrical in shape. After etching to remove an oxidation layer from the SiNWs, the rectangular shape shifts 90° in orientation. In traditional oxidation, the Deal-Grove formulae are used, but when the oxidation must take place in very small layers, such as with nanoscale devices, the Massoud formulae have to be used. However, even with Massoud, these formulae are not as good because of the morphology. Deal-Grove and Massoud formulae are intended for use with planar Si. We present some formulae that show the change in shape of SiNWs during oxidation, due to their morphology. The diffusion of dopants in SiNWs is a subject few research groups have taken up. Most of the groups who have, use SiNWs grown by the VLS method to make measurements and report findings. In order to measure the diffusion of dopants in SiNWs, a controllable diameter is needed. There are a number of ways to measure diffusion in SiNWs, but none of the ones used so far apply well to SiNWs grown by electroless process. Usually these groups present some mathematical formulae to predict diffusion in SiNWs, but these seem to lack mathematical rigor. Diffusion is a process that is best understood using Fick's Laws, which are applied to the problem of SiNWs in this dissertation. Diffusion is a science with a long history, going back at least 150 years. There are many formulae that can be used in the most common diffusion processes, but the processes involved with the diffusion of dopants in SiNWs is more complex than the simple diffusion processes that are fairly well-understood. Diffusion doping of SiNWs is a multiphase process that is more complex, first because it is multiphase and second because the second step involves a multiplicity of diffusing elements, plus oxidation, which brings on the problems of moving boundaries. In this dissertation, we present solutions to these problems, and the two-step diffusion process for SiNWs.

Download or read book Silicon Based Hybrid Nanoparticles written by Sabu Thomas and published by Elsevier. This book was released on 2021-09-24 with total page 391 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-Based Hybrid Nanoparticles: Fundamentals, Properties, and Applications focuses on the fundamental principles and promising applications of silicon-based hybrid nanoparticles in nanoelectronics, energy storage/conversion, catalysis, sensors, biomedicine, environment and imaging. This book is an important reference source for materials scientists and engineers who are seeking to understand more about the major properties and applications of silicon-based hybrid nanoparticles. As the hybridization of silicon nanoparticles with other semiconductors or metal oxides nanoparticles may exhibit superior features, when compared to lone, individual nanoparticles, this book provides the latest insights. In addition, the silicon/iron oxide hybrid nanoparticles also possess excellent fluorescence, super-paramagnetism, and biocompatibility that can be effectively used for the diagnostic imaging system in vivo. Similarly, gold-silicon nanohybrids could be used as highly efficient near-infrared hyperthermia agents for cancer cell destruction. - Outlines the major thermal, electrical, optical, magnetic and toxic properties of silicon-based hybrid nanoparticles - Describes major applications in energy, environmental science and catalysis - Assesses the major challenges to manufacturing silicon-based nanostructured materials on an industrial scale