Download or read book The Growth and Characterization of Gallium Arsenide Nanowire Structures by Metal Organic Chemical Vapor Deposition written by Nicholas G. Minutillo and published by . This book was released on 2014 with total page 141 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor nanowires hold a wealth of promise for studying the fundamental physics of electron behavior and interactions in a quasi-one dimensional environment and as components in or the foundation of technological advancement in electronic and spintronic devices. Especially in the case of spintronic applications, the crystalline environment must be highly controlled. Spintronic devices often depend on relative phases of spin states which are easily lost in an environment with high scattering probabilities. In any material system, control of the fabrication is the limiting factor to achieving the theoretical characteristics and operation. Bottom-up synthesis of semiconductor nanowires has yet to reach the level of control required for use as a base system in research. Material synthesis that meets the criteria for advanced applications remains a bottle neck in advancing the application of GaAs or any other semiconductor nanowires. We discuss the vapor-liquid-solid (VLS) mechanism and the growth of gallium arsenide and other III-V semiconductors. This mechanism has become a foundation of bottom-up nanowire growth, the physics of which remains the subject of ongoing research. We also discuss metal organic chemical vapor deposition (MOCVD), an epitaxial technique for III-V semiconductor thin films that is prominent in semiconductor nanowire growth.

Download or read book Structure and Electrical Properties of Gallium Arsenide Nanowires Grown by Metal Organic Chemical Vapor Deposition written by Rosnita Muhammad and published by . This book was released on 2011 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Metal organic Chemical Vapor Deposition Growth and Characterization of Gallium Nitride Nanostructures written by Jie Su and published by . This book was released on 2005 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Epitaxial Growth of Gallium Arsenide Materials and Devices of Metalorganic Chemical Vapor Deposition written by Vilnis Guntis Kreismanis and published by . This book was released on 1984 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Advances in III V Semiconductor Nanowires and Nanodevices written by Jianye Li and published by Bentham Science Publishers. This book was released on 2011-09-09 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires have been of great scientific and technological interest fo"

Download or read book Gallium arsenide Metalorganic Chemical Vapor Deposition with Alkyl Arsenic Sources written by Dietrich W. Vook and published by . This book was released on 1989 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth and Characterisation of Gold seeded Indium Gallium Arsenide Nanowires for Optoelectronic Applications written by Amira Saryati Ameruddin and published by . This book was released on 2015 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-V semiconductor nanowires have been shown as promising candidates to serve as building blocks in electronic and optoelectronic devices such as transistors, lasers, light emitting diodes, photodiodes and solar cells. Among the III-V semiconductors, ternary III-V alloy semiconductors such as InxGa1-xAs have the advantage of tunable bandgap by varying their alloy composition covering the important wavelengths used in optical telecommunication systems and sensing in near infra-red region. Therefore, it is essential to gain an understanding and control of ternary nanowires prior to incorporating them in device applications. This thesis presents a progressive advancement of Au-seeded InxGa1-xAs nanowire growth by metal-organic vapour phase epitaxy (MOVPE), towards achieving highly uniform composition, morphology and pure crystal phase. Several techniques have been employed to investigate the nanowire properties. Scanning and transmission electron microscopy, atomic force microscopy, X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy (EDX) have been used for structural and compositional analysis, while photoluminescence (PL) has been used to provide insight into their optical properties. Pure zinc-blende (ZB) phase InxGa1-xAs nanowires are obtained via two-temperature growth method, which involves growing an initial stub at a higher temperature followed by a lower growth temperature. Low-temperature growth is found to favour high In incorporation rate either via the vapour-liquid-solid (VLS) mode or the vapour-solid (VS). InxGa1-xAs nanowires with highly homogenous composition and pure ZB phase are achieved when the In incorporation rates in both modes are equivalent. Homogenous composition InxGa1-xAs nanowires can also be achieved at relatively high temperatures with tunable crystal phase. Detailed TEM analysis in combination with the EDX show that the crystal phase is dependent on the V/III ratio, and correlates with the Ga incorporation rate in the nanowire. Pure wurtzite (WZ) phase, uniform and taper-free nanowires are obtained with a combination of relatively high growth temperature, low V/III ratio and small diameter Au seed particle. The optimized pure WZ phase nanowires capped with InP show luminescence properties around 1.54 um, a wavelength region of importance to the optical fibre telecommunications. Understanding the growth evolution of InxGa1-xAs nanowires is improved by developing a model based on a nucleation kinetics approach. The modelling correlates well with the experimental results revealing the key factors governing the composition and growth rate of InxGa1-xAs nanowires. Finally, tunable emission wavelengths of InxGa1-xAs /InGaP core-shell structures within the range of 1100 - 1420 nm are achieved by tuning the shell thickness. The growth of the complex ternary/ternary system is studied using TEM and EDX analyses, revealing some challenges in the growth of the shell. Despite the challenges, a strain related blue-shifting of the InxGa1-xAs bandgap is demonstrated. Overall the thesis makes a significant progress in understanding the growth of Au-seeded InxGa1-xAs nanowires. From the systematic study, the growth of highly uniform InxGa1-xAs nanowires grown via Au-seeded VLS method is demonstrated. A growth model is developed to further understand the growth mechanism. The optimized nanowires in combination with an InP or InGaP shell show luminescence properties tunable within the near infra-red region, promising as future optoelectronic building blocks.

Download or read book Metalorganic Vapor Phase Epitaxy MOVPE written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-08-27 with total page 584 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Download or read book On the Growth and Characterization of Metal Oxide Semiconductor Structures on Gallium Arsenide written by Christopher Bruce Mills and published by . This book was released on 1985 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nanotechnology Toward the Sustainocene written by Thomas Alured Faunce and published by CRC Press. This book was released on 2014-12-02 with total page 353 pages. Available in PDF, EPUB and Kindle. Book excerpt: While the sustainability of our world is being endangered or destroyed by the misguided activities of artificial human entities, real people have begun to expand their moral sympathies sufficiently to prioritize protecting our world's interests. They have developed a new technology-nanotechnology-that has the potential to advance human society towa

Download or read book The Growth of Aluminum Gallium Arsenide gallium Arsenide Graded Barrier Quantum Well Heterostructure Lasers with Various Buffer Layer Structures by Metalorganic Chemical Vapor Deposition written by Michael Eugene Givens and published by . This book was released on 1988 with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Vapour Deposition CVD written by Kwang-Leong Choy and published by CRC Press. This book was released on 2019-06-07 with total page 492 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers a timely and complete overview on chemical vapour deposition (CVD) and its variants for the processing of nanoparticles, nanowires, nanotubes, nanocomposite coatings, thin and thick films, and composites. Chapters discuss key aspects, from processing, material structure and properties to practical use, cost considerations, versatility, and sustainability. The author presents a comprehensive overview of CVD and its potential in producing high performance, cost-effective nanomaterials and thin and thick films. Features Provides an up-to-date introduction to CVD technology for the fabrication of nanomaterials, nanostructured films, and composite coatings Discusses processing, structure, functionalization, properties, and use in clean energy, engineering, and biomedical grand challenges Covers thin and thick films and composites Compares CVD with other processing techniques in terms of structure/properties, cost, versatility, and sustainability Kwang-Leong Choy is the Director of the UCL Centre for Materials Discovery and Professor of Materials Discovery in the Institute for Materials Discovery at the University College London. She earned her D.Phil. from the University of Oxford, and is the recipient of numerous honors including the Hetherington Prize, Oxford Metallurgical Society Award, and Grunfeld Medal and Prize from the Institute of Materials (UK). She is an elected fellow of the Institute of Materials, Minerals and Mining, and the Royal Society of Chemistry.

Download or read book Low Pressure Metalorganic Chemical Vapor Deposition and Characterization of Indium Phosphide and Indium Gallium Arsenide written by Robert Hickman and published by . This book was released on 1994 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Design and Characterization of Indium Gallium Arsenide gallium Arsenide aluminum Gallium Arsenide Strained layer Lasers Grown by Metalorganic Chemical Vapor Deposition written by Kevin John Beernink and published by . This book was released on 1991 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Metalorganic Chemical Vapor Deposition of Gallium Arsenide aluminum Gallium Arsenide Thin Layer Superlattices Andlaser Structures written by and published by . This book was released on 1986 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Metalorganic Chemical Vapor Deposition of Gallium Arsenide aluminum Gallium Arsenide Thin layer Superlattices and Laser Structures written by Gregory Costrini and published by . This book was released on 1986 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Lattice Engineering written by Shumin Wang and published by CRC Press. This book was released on 2012-11-27 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains comprehensive reviews of different technologies to harness lattice mismatch in semiconductor heterostructures and their applications in electronic and optoelectronic devices. While the book is a bit focused on metamorphic epitaxial growth, it also includes other methods like compliant substrate, selective area growth, wafer bondi