Download or read book The Evolution of the Surface Morphology of Silicon During Aqueous Etching written by Theresa Anne Newton and published by . This book was released on 2000 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Understanding the Morphological Evolution of SI 111 Surfaces During Aqueous Etching written by Jaroslav Flidr and published by . This book was released on 1999 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Evolution of Silicon Surface Morphologies During Aqueous Fluorine Etching written by Yi-Chiau Huang and published by . This book was released on 2000 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Aqueous Etching of Microfabricated and Nanofabricated Surfaces written by Rikard Anton Wind and published by . This book was released on 2003 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Understanding and Controlling the Step Bunching Instability in Aqueous Silicon Etching written by Hailing Bao and published by . This book was released on 2005 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Aqueous Etching of Silicon 100 written by Ian T. Clark and published by . This book was released on 2008 with total page 125 pages. Available in PDF, EPUB and Kindle. Book excerpt: An etchant that produces atomically flat or near-atomically flat Si(100) surfaces has been long been sought by the microelectronics industry; however, no such etchant has yet been demonstrated. In the following I describe a combined spectroscopic and morphological investigation of Si(100) surfaces etched in two aqueous etchants: aqueous ammonium fluoride and pure deoxygenated water. For both of these systems, the etch morphology was determined using ex situ ultrahigh vacuum scanning tunneling microscopy. Information on the chemical nature of the surface species was obtained using Fourier transform infrared absorption spectroscopy in the multiple-internal-reflection geometry. A new deconvolution method, which is described here, was applied to the spectroscopic data to maximize the information extracted from these spectra. The spectroscopic data were used in conjunction with morphological data from STM experiments to determine the atomic-scale structure of the etched surfaces. During ammonium fluoride etching, the Si(100) surface was found to achieve a near-atomically-flat steady-state etch morphology characterized by & sim;200-A-wide terraces populated by alternating rows of unstrained silicon dihydrides within 30 sec. In contrast, during H2O etching, the surface structure was found to evolve over the course days, developing a surprisingly homogeneous 4-fold-symmetric morphology dominated by orthogonally oriented "stripes" running along & lang;011 & rang; directions, atomically flat terraces and several-monolayer-height hillocks. The atomic-scale structure of both etch morphologies is described, and the role of inter-adsorbate strain in the formation of the etch morphologies is discussed. Finally, the development of an organic functionalization chemistry suitable for use in silicon-resonator-based frequency-detected chemical sensing is described. The composition of these organic monolayers were characterized using Fourier transform infrared absorption spectroscopy, and the affect of monolayer surface termination on the mechanical properties of single-crystal-silicon micromechanical resonators was determined.
Download or read book Further Comments on the Thermal Etching of Silicon written by Arnold Reisman and published by . This book was released on 1990 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Development of Surface Morphology on Silicon and Silicon Carbide Induced by Stress Adsorption and Etching written by Ying Hong and published by . This book was released on 1997 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Shape and Functional Elements of the Bulk Silicon Microtechnique written by Joachim Frühauf and published by Springer Science & Business Media. This book was released on 2005 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt: This methodic manual presents a survey of the form-related and functional elements of the bulk silicon microtechnique. It gives a systematic description of simple shape elements and of elements for mechanical, fluidic and optical applications. This manual includes practical instructions for the use of the relevant techniques and an extensive collection of examples for the support of the search for applications via photographs, drawings and references. It serves as a valuable guide to the design of etch masks and processes while summarizing the important properties of silicon, especially aiming at producers of sensors and microtechnical components, as well as producers of components of precision engineering and optical applications.
Download or read book The Chemical and Physical Mechanisms Determining the Morphology of Wet chemically Etched Si 100 written by Brandon Scott Aldinger and published by . This book was released on 2010 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Because harsh cleaning processes roughen silicon wafers, etchants that can produce smooth Si(100) surfaces have been a long-standing goal of the microelectronics industry. In this work, scanning tunneling microscopy was used to investigate the morphologies of wet-chemically-etched Si(100) surfaces, whereas the chemical composition was studied using infrared absorption spectroscopy coupled with a polarization deconvolution technique. Using this combined approach, aqueous ammonium fluoride etching of Si(100) is shown to produce near-atomically flat surfaces consisting of alternating rows of silicon dihydrides. A new assignment of the vibrational modes accounts for the presence of both strained and unstrained adsorbates on the etched surface. This smooth morphology was easily disrupted by the accumulation of hydrogen bubbles on the surface during etching. Roughening mechanisms created raised circular pillars and microfaceted etch pits if bubbles were not removed via one of several bubble-reduction techniques. In addition, density functional theory was used to predict the vibrational modes for a variety of hydrogen-terminated silicon surfaces. The calculated mode energies highlight the sensitivity of vibrational frequencies to interadsorbate strain, though in general, the calculated frequencies were not accurate enough to predict vibrational frequencies without substantial experimental confirmation. Lastly, the pH-dependence of buffered hydrofluoric acid (BHF) etching of Si(100) was examined. Below the critical pH of 7.8, etched surfaces became progressively rougher and covered with hillocks, whereas surfaces etched in solutions above this pH exhibit no change from the flat missing-row structure. Prominent stretching modes for the BHFetched H/Si(100) surfaces were also assigned based on trends observed in the pHmodified Si(100) spectra and previously well-characterized morphologies.
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2004 with total page 788 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Silicon Based MEMS Materials and Technologies written by Markku Tilli and published by Elsevier. This book was released on 2009-12-08 with total page 670 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive guide to MEMS materials, technologies and manufacturing, examining the state of the art with a particular emphasis on current and future applications. Key topics covered include: - Silicon as MEMS material - Material properties and measurement techniques - Analytical methods used in materials characterization - Modeling in MEMS - Measuring MEMS - Micromachining technologies in MEMS - Encapsulation of MEMS components - Emerging process technologies, including ALD and porous silicon Written by 73 world class MEMS contributors from around the globe, this volume covers materials selection as well as the most important process steps in bulk micromachining, fulfilling the needs of device design engineers and process or development engineers working in manufacturing processes. It also provides a comprehensive reference for the industrial R&D and academic communities. - Veikko Lindroos is Professor of Physical Metallurgy and Materials Science at Helsinki University of Technology, Finland. - Markku Tilli is Senior Vice President of Research at Okmetic, Vantaa, Finland. - Ari Lehto is Professor of Silicon Technology at Helsinki University of Technology, Finland. - Teruaki Motooka is Professor at the Department of Materials Science and Engineering, Kyushu University, Japan. - Provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques - Shows how to protect devices from the environment and decrease package size for dramatic reduction of packaging costs - Discusses properties, preparation, and growth of silicon crystals and wafers - Explains the many properties (mechanical, electrostatic, optical, etc), manufacturing, processing, measuring (incl. focused beam techniques), and multiscale modeling methods of MEMS structures
Download or read book Issues in Applied Physics 2011 Edition written by and published by ScholarlyEditions. This book was released on 2012-01-09 with total page 3912 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues in Applied Physics / 2011 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about Applied Physics. The editors have built Issues in Applied Physics: 2011 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Applied Physics in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in Applied Physics: 2011 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.
Download or read book Electrochemistry of Silicon and Its Oxide written by Xiaoge Gregory Zhang and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 525 pages. Available in PDF, EPUB and Kindle. Book excerpt: It may be argued that silicon, carbon, hydrogen, oxygen, and iron are among the most important elements on our planet, because of their involvement in geological, biol- ical, and technological processes and phenomena. All of these elements have been studied exhaustively, and voluminous material is available on their properties. Included in this material are numerous accounts of their electrochemical properties, ranging from reviews to extensive monographs to encyclopedic discourses. This is certainly true for C, H, O, and Fe, but it is true to a much lesser extent for Si, except for the specific topic of semiconductor electrochemistry. Indeed, given the importance of the elect- chemical processing of silicon and the use of silicon in electrochemical devices (e. g. , sensors and photoelectrochemical cells), the lack of a comprehensive account of the electrochemistry of silicon in aqueous solution at the fundamental level is surprising and somewhat troubling. It is troubling in the sense that the non-photoelectrochemistry of silicon seems “to have fallen through the cracks,” with the result that some of the electrochemical properties of this element are not as well known as might be warranted by its importance in a modern technological society. Dr. Zhang’s book, Electrochemical Properties of Silicon and Its Oxide, will go a long way toward addressing this shortcoming. As with his earlier book on the elect- chemistry of zinc, the present book provides a comprehensive account of the elect- chemistry of silicon in aqueous solution.
Download or read book Evolution of Thin Film Morphology written by Matthew Pelliccione and published by Springer Science & Business Media. This book was released on 2008-01-29 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt: The focus of this book is on modeling and simulations used in research on the morphological evolution during film growth. The authors emphasize the detailed mathematical formulation of the problem. The book will enable readers themselves to set up a computational program to investigate specific topics of interest in thin film deposition. It will benefit those working in any discipline that requires an understanding of thin film growth processes.
Download or read book Surface Morphology Evolution During Low Energy Ion Bombardment of Silicon and Gallium Antimonide written by Gözde Özaydin-İnce and published by . This book was released on 2008 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: Ion bombardment is a widely used technique to modify the properties of materials for technological applications. In recent years, surface evolution during ion bombardment has also attracted considerable fundamental interest because of the desire to better understand the physical processes occurring at the surface and the frequent instability of surfaces to the spontaneous formation of nanostructures during bombardment. In this research, the surface morphology evolution of Silicon(100) and Gallium Antimonide(100) during low energy Argon ion bombardment was studied using real-time grazing-incidence small angle X-ray scattering and ex-situ atomic force microscopy. The surface morphology evolution of Si during ion bombardment as a function of substrate temperature was examined. Although, the surface was amorphized during bombardment at room temperature, above approximately 400°C a transition from amorphous to crystalline structure occurred. Above 500°C, the surface remained crystalline and the growing corrugations exhibited dynamic scaling with power law growth in amplitude and characteristic length scale. The ripple formation by off normal incidence low energy ion bombardment and ripple smoothening by normal incidence ion bombardment at room temperature were studied. Using real-time X-ray scattering, an exponential growth of the intensities during ripple formation was observed confirming that the early time kinetics obeyed the Bradley-Harper model. However, at later times the growth slowed and deviated from the predictions of the linear model. Ripple smoothening experiments, on the other hand, showed that the ripple structures eroded during normal incidence ion bombardment, possibly due to an additional lateral atomic smoothening mechanism active at these incidence angles. The real-time measurements showed that the small length scales decayed faster than the large length scales as predicted by the linear model, however the decay mechanisms were more complex than expected from existing linear theory. It was observed that, although Si surfaces remained smooth during bombardment at room temperature when a small amount of Molybdenum atoms was supplied to the surface during ion bombardment, correlated structures with two different characteristic length scales developed. The shorter length scale features ("dots") coarsened with time until they reached a constant spatial wavelength. The longer length scale corrugations associated with kinetic roughening, however, continued to grow in amplitude during bombardment. The evolution of this kinetic roughening could be described by the Family-Vicsek scaling hypothesis. A new noise term associated with inhomogeneities in local relaxation was proposed to quantitatively explain the early time kinetics. In addition, in-situ wafer curvature measurements were performed during ion bombardment to study the real-time stress state of the surface. The measurements showed that initially a compressive stress developed during bombardment, likely due to amorphization of the surface. However, seeding caused a larger tensile stress to develop with further bombardment, possibly due to the formation of higher density regions around the Mo seed atoms on the surface. The effects of this large tensile stress on the surface instability and the formation of the nanodots were also examined. Simulations of existing continuum equations of surface morphology evolution during normal incidence ion bombardment at room temperature were performed to study the effects of individual terms on the surface morphology, as well as their relations with each other. It was observed that the noisy Kuramoto-Sivashinsky model could only qualitatively predict the surface evolution, but could not reproduce all of the experimental results. Finally, the morphology evolution of GaSb(100) surfaces during ion bombardment at different energies was also studied. Formation of correlated nanodots with a length scale of approximately 30 nm was observed during bombardment at room temperature without seeding.
Download or read book Effects of Processing on Chemically etched Porous Silicon written by Michael James Winton and published by . This book was released on 1996 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt:
