Download or read book The Electron Beam Semiconductor EBS Amplifier written by Robert M. True and published by . This book was released on 1980 with total page 42 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Electron Beam Semiconductor (EBS) concept has existed for three decades; but only within the last decade has an active, well-defined program been underway to develop devices that can operate as high-power radio frequency(RF) amplifiers, fast risetime switches, and current and voltage pulse amplifiers. This report discusses the test procedures, data and results of reliability testing of RF and video pulse EBS amplifiers at Electronics Research and Development Command (ERADCOM), Fort Monmouth, New Jersey. Also, the experimental analysis of the series-connected diode EBS device is described in detail. Finally, the report concludes with a discussion of the state-of-the-art of EBS and future trends of the technology. (Author).
Download or read book EBS Electron Beam Semiconductor Pulse Amplifier Life Test written by WATKINS-JOHNSON CO PALO ALTO CALIF. and published by . This book was released on 1974 with total page 18 pages. Available in PDF, EPUB and Kindle. Book excerpt: Highly stable, high voltage, beam shield passivated diodes were fabricated for use in EBS (electron beam semiconductor) grid controlled pulse amplifiers. Six EBS pulse amplifiers were fabricated using these diodes and four of the EBS amplifiers were operated on life test for a total socket time of 14,500 hours. Data is presented showing that stable diode operation was obtained. (Author).
Download or read book Electron Beam Semiconductor RF Amplifier with Planar Diodes written by James A. Long and published by . This book was released on 1974 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of the program was Research and Development on Electron Bombarded Semiconductor RF amplifiers with planar diodes for the purpose of establishing uniformity of the EBS device, determining the thermal impedance of the target diodes, constructing devices for life test and examining them after the completion of the life test. The EBS amplifier consists of an electron gun, a meander-line deflection structure and a target all mounted within a vacuum wall.
Download or read book EBS Electron Bombarded Semiconductor RF Amplifier Design written by Daniel F. Kostishack and published by . This book was released on 1975 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report presents a comprehensive design criteria for EBS RF power amplifiers which incorporates all pertinent design parameters associated with both the electron beam and semiconductor diode targets. The derivation of the design model is described in detail, and an example amplifier design is carried out yielding an optimum set of device specifications and summary of predicted performance. (Author).
Download or read book Electron Beam Semiconductor Devices written by M. Braun and published by . This book was released on 1973 with total page 21 pages. Available in PDF, EPUB and Kindle. Book excerpt: N BEAMSDuring the course of the contract, five EBS amplifiers, designated as EE-155, and 15 mounted EBS diodes, designated as EE-154 A and B, were developed, fabricated and delivered to the USAECOM. Diode area was 10 sq. cm and 20 sq. mm, active width of N region 25 micrometers, with resistivity of 20 ohm-cm. The electron beam of the amplifiers is generated and modulated by a cathode grid structure, with a focus electrode for beam diameter control. Best back bias voltage of the 20 diodes delivered exceeds 400 volts, with an average of 300 volts. First tests at USAECOM were done on a 20 sq. mm diode tube at 235V back bias voltage. Peak current into 3.8 ohm load was 46A, a peak power of 8 KW with a pulse risetime of 1.5 ns. Risetime, when corrected for the input pulse, is approximately 1 ns. (Author).
Download or read book Electron Beam Semiconductor L Band Amplifier written by Bruce W. Bell and published by . This book was released on 1976 with total page 26 pages. Available in PDF, EPUB and Kindle. Book excerpt: The goal of this program is to develop a 2000 watt L-Band amplifier capable of operating at a 1 percent duty cycle with 25 dB gain and an operating lifetime of 10,000 hours. During this period, two EBS diode runs were processed, the target holder, output matching circuit, and output RF window were designed, and four exploratory models were fabricated, evaluated and tested. (Author).
Download or read book Dynamic Electric Field Profiles in Electron Beam Semiconductor Devices written by Maurice Weiner and published by . This book was released on 1973 with total page 22 pages. Available in PDF, EPUB and Kindle. Book excerpt: ICONDUCTOR Devices. Research and development technical rept., Weiner, Maurice ;McGowan, Joseph W. ;ECOM-4110DA-1-S-662705-A-0551-S-662705-A-05502(*semiconductor devices, electric fields), electrical properties, electron beams, radiofrequency amplifiers, carriers(semiconductors), semiconductor diodeselectron beam semiconductor amplifiersThe dynamic electric field profiles in the depletion region of Electron Beam Semiconductor (EBS) devices have been obtained. A sinusoidal, density modulated beam is assumed. The profile results have been applied to the problem of finding the peak power limits in an EBS amplifier, operating Class A. The dynamic theory indicates departures from the semistatic theory in output power. The departures are most significant in a rolloff region caused partly or entirely by transit time effects. (Author).
Download or read book Electron Physics Research Electron Beam Semiconductor Active Devices Lowpass Amplifier and Pulse Systems Final Report written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1970 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Capabilities of Electron Beam Semiconductor Active Devices written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1968 with total page 38 pages. Available in PDF, EPUB and Kindle. Book excerpt: Some properties of a class of active elements employing an electron beam to control the output current of a semiconductor device are discussed in this paper. It is shown that the basic beam-semiconductor devices have high gains, fast response and large output capability. Numerical data are given that allow the capabilities of the device to be evaluated in a given application. It is shown that the extreme configurational flexibility of the device may be employed to enhance its basic performance capability as well as to realize unique devices that can rapidly perform complex functions. (Author.
Download or read book Electron Beam Semiconductor Power Accumulator written by Maurice Weiner and published by . This book was released on 1976 with total page 38 pages. Available in PDF, EPUB and Kindle. Book excerpt: A feasibility investigation on the combining of power outputs from several electron beam-semiconductor (EBS) diodes, operating Class B, was undertaken. A feasibility model for the 500 - 1000 MHz band was designed, fabricated, and tested. The design makes use of plug-in tubes, each of which is a self-contained, replaceable unit amplifier. Each unit amplifier contains an EBS diode as well as grid modulation and electron gun structures. The design includes impedance matching networks for the input to the grid-cathode, as well as for the diode output. Results demonstrate the feasibility of the device, but additional diode development is required in order for the device to fulfill its potential. (Author).
Download or read book Electron Beam Semiconductor High Current Video Pulser written by Richard I. Knight and published by . This book was released on 1974 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ten EBS high current pulse amplifiers were fabricated, tested, and delivered to ECOM for life testing. The diodes used in these devices had an active area of 0.35 sq cm and were fabricated with an integral gold beam shield over the junction boundry to prevent diode reverse breakdown degradation due to beam illumination. The diodes were mounted on BeO substrates in order to be able to x-ray and evaluate the diode to substrate bond. Each of the devices was tested at approximately 40 A peak output into a 1 ohm load with a pulse risetime of 3 nanoseconds. (Author).
Download or read book Semiconductor Devices and Integrated Electronics written by A. G. Milnes and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 1014 pages. Available in PDF, EPUB and Kindle. Book excerpt: For some time there has been a need for a semiconductor device book that carries diode and transistor theory beyond an introductory level and yet has space to touch on a wider range of semiconductor device principles and applica tions. Such topics are covered in specialized monographs numbering many hun dreds, but the voluminous nature of this literature limits access for students. This book is the outcome of attempts to develop a broad course on devices and integrated electronics for university students at about senior-year level. The edu cational prerequisites are an introductory course in semiconductor junction and transistor concepts, and a course on analog and digital circuits that has intro duced the concepts of rectification, amplification, oscillators, modulation and logic and SWitching circuits. The book should also be of value to professional engineers and physicists because of both, the information included and the de tailed guide to the literature given by the references. The aim has been to bring some measure of order into the subject area examined and to provide a basic structure from which teachers may develop themes that are of most interest to students and themselves. Semiconductor devices and integrated circuits are reviewed and fundamental factors that control power levels, frequency, speed, size and cost are discussed. The text also briefly mentions how devices are used and presents circuits and comments on representative applications. Thus, the book seeks a balance be tween the extremes of device physics and circuit design.
Download or read book Tech Notes written by and published by . This book was released on 1983 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1981 with total page 1370 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Download or read book EE Systems Engineering Today written by and published by . This book was released on 1971 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Noise EBS Jammer written by Douglas B. Clark and published by . This book was released on 1979 with total page 39 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this program is to reduce the output power level of spurious noise signals, intermodulation (IM) products and harmonic distortion generated by deflection modulated electron beam semiconductor (EBS) amplifiers. Work accomplished during the reporting period included identification and theoretical investigation of causes of nonlinearity and measurements of linearity, noise and distortion of existing EBS amplifiers. (Author).
Download or read book Life and Reliability of EBS Diodes written by J. Simpson and published by . This book was released on 1974 with total page 71 pages. Available in PDF, EPUB and Kindle. Book excerpt: The report describes a program to investigate the life and reliability of two types of electron-beam-semiconductor (EBS) diodes with the objective of demonstrating a 2500 hour life. One is large (approximately 1 cm diameter) and is suitable for high average power, low frequency amplifiers. The other is small (0.20 inch diameter) and can provide amplification up to 4.6 GHz. These diodes represent the extremes of the largest and smallest EBS diodes reported in the industry.
