Download or read book The Electromigration Drift Velocity and the Reliability of Dual damascene Copper Interconnect Trees written by Frank Lili Wei and published by . This book was released on 2004 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt: (Cont.) It is postulated that this gradual resistance increase results from void growth and that the rate of resistance increase correlates with the drift velocity for electromigration. Through drift measurements, we determined the activation energy for electromigration is 0.80±0.06eV. The values of the drift velocities determined in vias-below lines were similar to those measured in vias-above lines. This fact supports the proposal that the asymmetry in reliability between the two different configurations is associated with the void sizes required for failure. Reliability characterization of dotted-I and T-shaped Cu interconnect trees was also carried out. Similar to Al, we found that individual interconnect segments cannot serve as fundamental reliability units (FRU). Unlike Al, we found that Cu interconnect trees are not the FRUs either, due to possible non-blocking vias. Furthermore, due to low stress required for void nucleation in Cu- compared to Al-based interconnects, Cu reliability behavior points to the need to develop a via-based reliability assessment methodology. An atomic reservoir effect for Cu was not indicated by the investigation T-shaped trees. This leads to conservative void growth model for circuit-level reliability assessment methodology.

Download or read book Statistical modeling reliability analysis for electromigration early failure and mass transport in cu oxide dual damascene interconnects written by Ki-don Lee and published by . This book was released on 2000 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fundamentals of Electromigration Aware Integrated Circuit Design written by Jens Lienig and published by Springer. This book was released on 2018-02-23 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book provides a comprehensive overview of electromigration and its effects on the reliability of electronic circuits. It introduces the physical process of electromigration, which gives the reader the requisite understanding and knowledge for adopting appropriate counter measures. A comprehensive set of options is presented for modifying the present IC design methodology to prevent electromigration. Finally, the authors show how specific effects can be exploited in present and future technologies to reduce electromigration’s negative impact on circuit reliability.

Download or read book Long Term Reliability of Nanometer VLSI Systems written by Sheldon Tan and published by Springer Nature. This book was released on 2019-09-12 with total page 460 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices. The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction. Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, and system level EM-induced reliability optimization and management techniques. Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models; Introduces a dynamic EM model to address transient stress evolution, in which wires are stressed under time-varying current flows, and the EM recovery effects. Also includes new, parameterized equivalent DC current based EM models to address the recovery and transient effects; Presents a cross-layer approach to transistor aging modeling, analysis and mitigation, spanning multiple abstraction levels; Equips readers for EM-induced dynamic reliability management and energy or lifetime optimization techniques, for many-core dark silicon microprocessors, embedded systems, lower power many-core processors and datacenters.

Download or read book Managing Temperature Effects in Nanoscale Adaptive Systems written by David Wolpert and published by Springer Science & Business Media. This book was released on 2011-08-31 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses new techniques for detecting, controlling, and exploiting the impacts of temperature variations on nanoscale circuits and systems. A new sensor system is described that can determine the temperature dependence as well as the operating temperature to improve system reliability. A new method is presented to control a circuit’s temperature dependence by individually tuning pull-up and pull-down networks to their temperature-insensitive operating points. This method extends the range of supply voltages that can be made temperature-insensitive, achieving insensitivity at nominal voltage for the first time.

Download or read book Nano CMOS Circuit and Physical Design written by Ban Wong and published by John Wiley & Sons. This book was released on 2005-04-08 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: Based on the authors' expansive collection of notes taken over the years, Nano-CMOS Circuit and Physical Design bridges the gap between physical and circuit design and fabrication processing, manufacturability, and yield. This innovative book covers: process technology, including sub-wavelength optical lithography; impact of process scaling on circuit and physical implementation and low power with leaky transistors; and DFM, yield, and the impact of physical implementation.

Download or read book Failure Analysis written by Marius Bazu and published by John Wiley & Sons. This book was released on 2011-03-08 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Failure analysis is the preferred method to investigate product or process reliability and to ensure optimum performance of electrical components and systems. The physics-of-failure approach is the only internationally accepted solution for continuously improving the reliability of materials, devices and processes. The models have been developed from the physical and chemical phenomena that are responsible for degradation or failure of electronic components and materials and now replace popular distribution models for failure mechanisms such as Weibull or lognormal. Reliability engineers need practical orientation around the complex procedures involved in failure analysis. This guide acts as a tool for all advanced techniques, their benefits and vital aspects of their use in a reliability programme. Using twelve complex case studies, the authors explain why failure analysis should be used with electronic components, when implementation is appropriate and methods for its successful use. Inside you will find detailed coverage on: a synergistic approach to failure modes and mechanisms, along with reliability physics and the failure analysis of materials, emphasizing the vital importance of cooperation between a product development team involved the reasons why failure analysis is an important tool for improving yield and reliability by corrective actions the design stage, highlighting the ‘concurrent engineering' approach and DfR (Design for Reliability) failure analysis during fabrication, covering reliability monitoring, process monitors and package reliability reliability resting after fabrication, including reliability assessment at this stage and corrective actions a large variety of methods, such as electrical methods, thermal methods, optical methods, electron microscopy, mechanical methods, X-Ray methods, spectroscopic, acoustical, and laser methods new challenges in reliability testing, such as its use in microsystems and nanostructures This practical yet comprehensive reference is useful for manufacturers and engineers involved in the design, fabrication and testing of electronic components, devices, ICs and electronic systems, as well as for users of components in complex systems wanting to discover the roots of the reliability flaws for their products.

Download or read book Copper Interconnect Technology written by Tapan Gupta and published by Springer Science & Business Media. This book was released on 2010-01-22 with total page 433 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since overall circuit performance has depended primarily on transistor properties, previous efforts to enhance circuit and system speed were focused on transistors as well. During the last decade, however, the parasitic resistance, capacitance, and inductance associated with interconnections began to influence circuit performance and will be the primary factors in the evolution of nanoscale ULSI technology. Because metallic conductivity and resistance to electromigration of bulk copper (Cu) are better than aluminum, use of copper and low-k materials is now prevalent in the international microelectronics industry. As the feature size of the Cu-lines forming interconnects is scaled, resistivity of the lines increases. At the same time electromigration and stress-induced voids due to increased current density become significant reliability issues. Although copper/low-k technology has become fairly mature, there is no single book available on the promise and challenges of these next-generation technologies. In this book, a leader in the field describes advanced laser systems with lower radiation wavelengths, photolithography materials, and mathematical modeling approaches to address the challenges of Cu-interconnect technology.

Download or read book Fundamentals of Layout Design for Electronic Circuits written by Jens Lienig and published by Springer Nature. This book was released on 2020-03-19 with total page 319 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the fundamental knowledge of layout design from the ground up, addressing both physical design, as generally applied to digital circuits, and analog layout. Such knowledge provides the critical awareness and insights a layout designer must possess to convert a structural description produced during circuit design into the physical layout used for IC/PCB fabrication. The book introduces the technological know-how to transform silicon into functional devices, to understand the technology for which a layout is targeted (Chap. 2). Using this core technology knowledge as the foundation, subsequent chapters delve deeper into specific constraints and aspects of physical design, such as interfaces, design rules and libraries (Chap. 3), design flows and models (Chap. 4), design steps (Chap. 5), analog design specifics (Chap. 6), and finally reliability measures (Chap. 7). Besides serving as a textbook for engineering students, this book is a foundational reference for today’s circuit designers. For Slides and Other Information: https://www.ifte.de/books/pd/index.html

Download or read book Materials for Advanced Packaging written by Daniel Lu and published by Springer. This book was released on 2016-11-18 with total page 974 pages. Available in PDF, EPUB and Kindle. Book excerpt: Significant progress has been made in advanced packaging in recent years. Several new packaging techniques have been developed and new packaging materials have been introduced. This book provides a comprehensive overview of the recent developments in this industry, particularly in the areas of microelectronics, optoelectronics, digital health, and bio-medical applications. The book discusses established techniques, as well as emerging technologies, in order to provide readers with the most up-to-date developments in advanced packaging.

Download or read book Nanometer CMOS ICs written by Harry J.M. Veendrick and published by Springer. This book was released on 2017-04-28 with total page 639 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook provides a comprehensive, fully-updated introduction to the essentials of nanometer CMOS integrated circuits. It includes aspects of scaling to even beyond 12nm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design implementation and application. Coverage includes all associated disciplines of nanometer CMOS ICs, including physics, lithography, technology, design, memories, VLSI, power consumption, variability, reliability and signal integrity, testing, yield, failure analysis, packaging, scaling trends and road blocks. The text is based upon in-house Philips, NXP Semiconductors, Applied Materials, ASML, IMEC, ST-Ericsson, TSMC, etc., courseware, which, to date, has been completed by more than 4500 engineers working in a large variety of related disciplines: architecture, design, test, fabrication process, packaging, failure analysis and software.

Download or read book Digital Integrated Circuits written by Jan M. Rabaey and published by . This book was released on 1996 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt: Beginning with discussions on the operation of electronic devices and analysis of the nucleus of digital design, the text addresses: the impact of interconnect, design for low power, issues in timing and clocking, design methodologies, and the effect of design automation on the digital design perspective.

Download or read book Diffusion in Solids written by A.S. Nowick and published by Elsevier. This book was released on 2012-12-02 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt: Diffusion in Solids: Recent Developments provides an overview of diffusion in crystalline solids. This book discusses the various aspects of the theory of diffusion. Organized into nine chapters, this volume starts with a discussion on the process of diffusion in solids. This book then examines the tools that supplement the conventional diffusion measurements, including electromigration, ionic conductivity, isotope effects, and vacancy wind effects. This text explores the molecular dynamic calculation by which the interatomic forces must be assumed. Other chapters discuss the method of measurement of the isotope effect on diffusion, which is the most powerful method of determining relevant information about the correlation factor. This volume extensively discusses diffusion in organic and amorphous materials, as well as interstitial diffusion in solids. The final chapter deals with ionic motion and diffusion in various groups of materials called fast ionic conductors. Solid-state physicists, materials scientists, physical chemists, and electrochemists will find this book extremely useful.

Download or read book Analog to Digital Conversion written by Marcel Pelgrom and published by Springer. This book was released on 2016-09-29 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook is appropriate for use in graduate-level curricula in analog-to-digital conversion, as well as for practicing engineers in need of a state-of-the-art reference on data converters. It discusses various analog-to-digital conversion principles, including sampling, quantization, reference generation, nyquist architectures and sigma-delta modulation. This book presents an overview of the state of the art in this field and focuses on issues of optimizing accuracy and speed, while reducing the power level. This new, third edition emphasizes novel calibration concepts, the specific requirements of new systems, the consequences of 22-nm technology and the need for a more statistical approach to accuracy. Pedagogical enhancements to this edition include additional, new exercises, solved examples to introduce all key, new concepts and warnings, remarks and hints, from a practitioner's perspective, wherever appropriate. Considerable background information and practical tips, from designing a PCB, to lay-out aspects, to trade-offs on system level, complement the discussion of basic principles, making this book a valuable reference for the experienced engineer.

Download or read book Electrochemical Nanotechnologies written by Tetsuya Osaka and published by Springer Science & Business Media. This book was released on 2009-12-15 with total page 283 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this book, the term "electrochemical nanotechnology" is defined as nanoprocessing by means of electrochemical techniques. This introductory book reviews the application of electrochemical nanotechnologies with the aim of understanding their wider applicability in evolving nanoindustries. These advances have impacted microelectronics, sensors, materials science, and corrosion science, generating new fields of research that promote interaction between biology, medicine, and microelectronics. This volume reviews nanotechnology applications in selected high technology areas with particular emphasis on advances in such areas. Chapters are classified under four different headings: Nanotechnology for energy devices - Nanotechnology for magnetic storage devices - Nanotechnology for bio-chip applications - Nanotechnology for MEMS/Packaging.

Download or read book Flash Memories written by Paulo Cappelletti and published by Springer. This book was released on 1999-06-30 with total page 540 pages. Available in PDF, EPUB and Kindle. Book excerpt: A Flash memory is a Non Volatile Memory (NVM) whose "unit cells" are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the "unit cell" of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5].

Download or read book Advanced Nanoscale ULSI Interconnects Fundamentals and Applications written by Yosi Shacham-Diamand and published by Springer Science & Business Media. This book was released on 2009-09-19 with total page 545 pages. Available in PDF, EPUB and Kindle. Book excerpt: In Advanced ULSI interconnects – fundamentals and applications we bring a comprehensive description of copper-based interconnect technology for ultra-lar- scale integration (ULSI) technology for integrated circuit (IC) application. In- grated circuit technology is the base for all modern electronics systems. You can ?nd electronics systems today everywhere: from toys and home appliances to a- planes and space shuttles. Electronics systems form the hardware that together with software are the bases of the modern information society. The rapid growth and vast exploitation of modern electronics system create a strong demand for new and improved electronic circuits as demonstrated by the amazing progress in the ?eld of ULSI technology. This progress is well described by the famous “Moore’s law” which states, in its most general form, that all the metrics that describe integrated circuit performance (e. g. , speed, number of devices, chip area) improve expon- tially as a function of time. For example, the number of components per chip d- bles every 18 months and the critical dimension on a chip has shrunk by 50% every 2 years on average in the last 30 years. This rapid growth in integrated circuits te- nology results in highly complex integrated circuits with an increasing number of interconnects on chips and between the chip and its package. The complexity of the interconnect network on chips involves an increasing number of metal lines per interconnect level, more interconnect levels, and at the same time a reduction in the interconnect line critical dimensions.