Download or read book The Electrical Properties of 60 KeV Zinc Ions Implanted Into Semi insulating Gallium arsenide written by Anikara Rangappan and published by . This book was released on 1972 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1972 with total page 1052 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1972 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advances in Electronics and Electron Physics written by and published by Academic Press. This book was released on 1983-11-01 with total page 407 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Electronics and Electron Physics
Download or read book Electrical Properties of Ion Implanted Layers in Silicon and Gallium Arsenide written by Richard Dana Pashley and published by . This book was released on 1974 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt: Part I: With the advent of ion implantation, it has become possible to introduce many new dopant species into silicon. The electrical behavior of implanted species displaying deep energy levels was investigated. Part II: Ion implantation was investigated as a doping process for the fabrication of submicron n-type layers in GaAs.
Download or read book GaAs Devices and Circuits written by Michael S. Shur and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 677 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.
Download or read book Properties of Gallium Arsenide written by and published by INSPEC. This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Behavior of Ge and Ge As Implanted Gallium Arsenide written by Bryan L. Kelchner and published by . This book was released on 1986 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt: The amphoteric electrical properties of single implants of Ge and dual implants of Ge and As into semi-insulating Cr-doped GaAs have been studied using the Hall-effect/sheet-resistivity measurement method. Room temperature implantation was performed at an ion energy of 120 keV with a dose ranging from 5 x 10 to the 12th power to 3 x 10 to the 15th power per sq cm. The implanted samples were annealed at 900 C for 15 minutes. The results of carrier profile measurements show the amphoteric behavior of Ge, and the Ga-site occupancy by the Ge ions are signficantly enhanced by the addition of As ions. In general, the carrier depth profiles show relatively flat but considerably fluctuating distributions. Capacitance-voltage (C-V) measurements were also made on some samples with low enough carrier concentrations, and the Hall profiles corrected for surface depletion widths were compared with the C-V profiles. SIMS atomic distributions of Ge have also been measured, the the results show that the Ge atomic profiles of the as-implanted samples do not follow the LSS Guassian distribution. The SIMS profile for annealed samples show very little redistribution of the Ge ions. A comparison of the Hall and SIMS data shows that carrier concentrations are much less than the number of Ge ions in most of the implanted region. This is probably due to the unannealed implantation damage and/or electrical self-compensation. (Author).
Download or read book Electrical and Optical Properties of Semi insulating and Ion implanted Gallium arsenide and Indium phosphide written by Jin Koo Rhee and published by . This book was released on 1982 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Arsenide written by M. J. Howes and published by . This book was released on 1985 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the seventh volume in the Wiley Series in Solid State Devices and Circuits, and deals comprehensively with the use of gallium arsenide for high frequency and high speed circuits.
Download or read book Electrical Characterization of Germanium Implanted Gallium Arsenide written by Frank L. Pedrotti and published by . This book was released on 1980 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: The amphoteric electrical properties of germanium single implants into gallium arsenide, and of dual implants of germanium with either gallium or arsenic into gallium arsenide, have been studied. Room temperature implantation was performed for all implanted ions at 120 keV, with doses ranging from 5E12 to 3E15 ions per square centimeter. Implanted samples were annealed with pyrolytic silicon nitride encapsulants at temperatures ranging from 700 to 1000 degrees Celsius. Both p- and n-type layers were observed. Type of conductivity, electrical activation, and carrier mobility were found to depend critically upon ion dose and anneal temperature. The general electrical behavior suggests that in samples of lower dose and anneal temperature, the implanted Ge ions go into As sites preferentially, producing p-type activity, whereas in samples of higher dose and anneal temperature, more Ge ions go into Ga sites, producing n-type activity. Conductivity was found to change from p- to n-type at an intermediate dose of 3E14 ions per square centimeter and at an anneal temperature between 900 and 950 degrees Celsius. It has been determined that additional implantation of As into GaAs:Ge favors Ge occupancy of Ga sites and an enhancement of n-type activity, whereas the additional implantation of Ga encourages Ge occupancy of As sites and an enhancement of p-type activity. Enhancement factors of as much as 8 for p-type activations, and as much as 50 for n-type activations have been measured. (Author).
Download or read book Ion solid Interactions written by Walter M. Gibson and published by . This book was released on 1980 with total page 726 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book An Investigation of Temperature Dependence of Electrical Properties in Ion implanted Gallium Arsenide written by A. K. M. Matior Rahman and published by . This book was released on 1986 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Investigation of the Electrical Properties of Ion implanted Gallium Arsenide as a Function of Temperature written by Md. Shah Alam and published by . This book was released on 1986 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Effects of Ion Implanted Gallium Arsenic and Phosphorus on the Diffusion of Ion Implanted Zinc in Gallium Arsenide Phosphide written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1975 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion solid Interactions Bibliography written by Walter M. Gibson and published by . This book was released on 1980 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt:
