Download or read book The Electrical Activity of Implantation induced Defects in Silicon written by Brian Holm and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Electrical Activity of Defects Created in Silicon Single Crystals During Ion Implantation written by Åke Andersson and published by . This book was released on 1973 with total page 42 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Effect of Disorder and Defects in Ion Implanted Semiconductors Electrical and Physiochemical Characterization written by and published by Academic Press. This book was released on 1997-05-23 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing. Electrical and Physicochemical Characterization focuses on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical and physico-chemical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Download or read book Science and Technology of Defects in Silicon written by C.A.J. Ammerlaan and published by Elsevier. This book was released on 2014-01-01 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities.In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.
Download or read book Effect of Disorder and Defects in Ion Implanted Semiconductors Optical and Photothermal Characterization written by and published by Academic Press. This book was released on 1997-06-12 with total page 335 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical, physical, and optical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Download or read book Electrical and Optical Characterization of Intrinsic and Ion Implantation Induced Defects in 6H And 4H SiC written by Michael B. Scott and published by . This book was released on 1999-11-01 with total page 257 pages. Available in PDF, EPUB and Kindle. Book excerpt: Deep level transient spectroscopy (DLTS), Hall effect, and cathodolummescence (CL) measurements are used to characterize the intrinsic and ion-implantation induced defects in high-temperature (475 and 500 deg C) ion- implanted epitaxial n-type 6H- and 4H-SiC, ion-implanted with Cr, Mg, Ar, N, and P atoms. Comparison of room-temperature and high-temperature ion-implanted 6H- SiC:Mg and :Cr indicate the significance of high-temperature ion implantation on the activation of the ion-implanted atoms and damage-recovery of the crystalline lattice. The effects of high-temperature annealing on both damage-recovery and implanted ion activation are detected and analyzed, from 1200 to 1800 degrees C. Trap parameters 0 both damage-related and species-related defects are determined by curve-fitting of DLTS rate window plots, including the identification of a 615 meV silicon-vacancy-substitutional-nitrogen defect. Double-correlated DLTS measurements indicate a one-dimensional distribution of various defects along the implantation axis and slight surface diffusion of ion-implanted magnesium during high-temperature annealing. Current-voltage-temperature measurements of 6H-SiC:Mg :Cr indicate the effect of annealing temperature and ion species on the concentration of near midgap defects. Optimum anneal temperatures are determined for activation of ion-implanted nitrogen and phosphorus. CL measurements indicate the formation of deep radiative centers in 500 degrees C ion-implanted 4H-SiC:P and :N. CL measurements also indicate the presence of a 130 meV higher energy level conduction band minimum.
Download or read book Characterization and Origin of Silicon Defect Electrical Activity Through Electron beam induced current EBIC Microscopy written by George Charles Perreault and published by . This book was released on 1991 with total page 334 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation Induced Defect Formation and Amorphization in the Group IV Semiconductors written by Diane P. Hickey and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Damage in Si and Ge was produced by Si implantation at 40 keV to a dose of 1 x 1014 cm−2 and 1 x 1015 cm−2, and amorphizing damage in diamond was produced by Si implantation at 1 MeV to a dose of 3 and 7 x 1015 cm−2. All implants were carried out at room temperature. For non-amorphizing implants (1014 Si+ cm−2) into Ge, dot-like defects formed immediately upon implantation and were stable up to temperatures of 650 °C. The activation energy of these defects was determined to be approximately 0.2 " 0.1 eV. For amorphizing implants (1015 Si+ cm−2) into Ge and upon solid-phase epitaxial regrowth, the same types of defects seen in Si were also seen in Ge. However, in Ge, the end-of-range defects were the least stable, dissolving at temperatures around 650 °C. The activation energy for the dissolution of end-of-range defects in Ge is approximately 0.4 " 0.1 eV. For diamond, non-amorphizing Si+ implantation (
Download or read book Electrical and Electron Microscopy Observation on Defects in Ion Implantation i e Implanted Silicon written by Harry An-Hai Ling and published by . This book was released on 1978 with total page 50 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Gettering of Metals in Silicon to Defects Induced by Ion Implantation written by Yin-Yin Jennifer Wong Leung and published by . This book was released on 1997 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Stability of Point Defects in Silicon Induced by High Energy Low Dose Ion Implantation written by Lalita Josyula and published by . This book was released on 1997 with total page 50 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Investigation of Defects Formed by Ion Implantation of H2 Into Silicon written by Patrick Whiting and published by . This book was released on 2009 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Ion cutting achieved by the implantation of hydrogen or the co-implantation of hydrogen and helium is among the most common methods for the formation of Silicon on Insulator (SOI) structures used in the semiconductor industry. In this method, hydrogen is implanted into silicon at a high fluence and is heated in order to induce an exfoliation event. During this exfoliation event, a silicon wafer is cleaved along the depth at which the maximum damage concentration occurs, and the cleaved material bonds chemically to any underlying material being used as a handle substrate. The ion implantation process induces a variety of defect species which evolve as they are annealed at varying temperatures and times and the characteristics of these defects and the reactions which dominate their formation are critical for low temperature substrates such as LCD glass. This study observes the annealing characteristics of a variety of structural and electronic defects induced by ion implantation, including hydrogen decorated monovacancies and hydrogen decorated interstitials. The states arising from these decorated point defects were analyzed using Multiple Internal Transmission Infrared Spectroscopy (MIT-IR) and Deep Level Transient Spectroscopy (DLTS). A method for observing implant-relate defects on a MOS Capacitor using a DLTS measurement was developed. A new method for extracting the activation energy and the capture cross section of states observed with DLTS through the use of the Full Width at "Nth" Maximum was also developed. MIT-IR spectra resulting from ion implantation were analyzed using a novel method to extract the activation energy, reaction velocity and order of a solid state reaction, termed Kinetic Differential Analysis. Analysis using the methods described above allowed for the identification of five trap energy levels associated with hydrogen ion implantation which were tentatively assigned to VH2 (.15eV) VH3 (~.54eV) and IHx (.16eV and .19eV) defects. Kinetic Differential Analysis of MIT-IR spectra has identified reaction pathways associated with the 'decay' of decorated monovacancy defects. These chemical reactions have kinetic reaction orders of approximately 1.5, indicating a secondary reaction which contributes to the decay as well as some general interaction between reactants during the decay process."--Abstract.
Download or read book The influence of process induced defects on electrical properties of silicon junctions written by Gert I. Andersson and published by . This book was released on 1992 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Beam Applications written by Ishaq Ahmad and published by BoD – Books on Demand. This book was released on 2018-07-18 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion beam of various energies is a standard research tool in many areas of science, from basic physics to diverse areas in space science and technology, device fabrications, materials science, environment science, and medical sciences. It is an advance and versatile tool to frequently discover applications across a broad range of disciplines and fields. Moreover, scientists are continuously improving the ion beam sources and accelerators to explore ion beam at the forefront of scientific endeavours. This book provides a glance view on MeV ion beam applications, focused ion beam generation and its applications as well as practical applications of ion implantation.
Download or read book Microscopy of Semiconducting Materials 1983 Third Oxford Conference on Microscopy of Semiconducting Materials St Catherines College March 1983 written by A.G. Cullis and published by CRC Press. This book was released on 2020-11-25 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains invited and contributed papers at the conference on Microscopy of Semiconducting Materials which took place on 21–23 March 1983 in St Cathernine's College, Oxford. The conference was the third in the series devoted to advances in microscopical studies of semiconductors.
Download or read book Microscopy of Semiconducting Materials 1983 Third Oxford Conference on Microscopy of Semiconducting Materials St Catherines College March 1983 written by Cullis and published by CRC Press. This book was released on 1983-01-01 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book C H N and O in Si and Characterization and Simulation of Materials and Processes written by A. Borghesi and published by Newnes. This book was released on 2012-12-02 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry. The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.
