Download or read book The Effects of Plasma Processing of Dielectric Layers on Gallium Arsenide Integrated Circuits written by Cockrill, JR. and published by . This book was released on 1987 with total page 21 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the commercial production of GaAs I.C.s it is essential to minimise processing induced damage to the shallow semiconducting layers of the MESFET. Currently used fabrication sequences do not involve the use of highly energetic plasma processes such as RIE under conditions which may cause surface damage as a result of ion bombardment. In the development of new fabrication technologies it is essential to ensure that device performance is not degraded by the use of such plasma processes. The use of such techniques as plasma enhanced CVD to deposit passivation or interlayer dielectrics, and subsequent patterning by plasma or reactive ion etching, may adversely affect the active layer as a result of ion or radiation bombardment, or by chemical contamination of the surface.
Download or read book Emerging Semiconductor Technology written by Dinesh C. Gupta and published by ASTM International. This book was released on 1987 with total page 701 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Arsenide Digital Circuits written by Omar Wing and published by Springer Science & Business Media. This book was released on 1990-10-31 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide technology has come of age. GaAs integrated circuits are available today as gate arrays with an operating speed in excess of one Gigabits per second. Special purpose GaAs circuits are used in optical fiber digital communications systems for the purpose of regeneration, multiplexing and switching of the optical signals. As advances in fabrication and packaging techniques are made, the operat ing speed will further increase and the cost of production will reach a point where large scale application of GaAs circuits will be economical in these and other systems where speed is paramount. This book is written for students and engineers who wish to enter into this new field of electronics for the first time and who wish to embark on a serious study of the subject of GaAs circuit design. No prior knowledge of GaAs technology is assumed though some previous experience with MOS circuit design will be helpful. A good part of the book is devoted to circuit analysis, to the extent that is possible for non linear circuits. The circuit model of the GaAs transistor is derived from first principles and analytic formulas useful in predicting the approxi mate circuit performance are also derived. Computer simulation is used throughout the book to show the expected performance and to study the effects of parameter variations.
Download or read book Gallium Arsenide IC Technology written by Neil Sclater and published by . This book was released on 1988 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1288 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma Processing for VLSI written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics: Microstructure Science, Volume 8: Plasma Processing for VLSI (Very Large Scale Integration) discusses the utilization of plasmas for general semiconductor processing. It also includes expositions on advanced deposition of materials for metallization, lithographic methods that use plasmas as exposure sources and for multiple resist patterning, and device structures made possible by anisotropic etching. This volume is divided into four sections. It begins with the history of plasma processing, a discussion of some of the early developments and trends for VLSI. The second section, Deposition, discusses deposition techniques for VLSI such as sputtering metals for metallization and contacts, plasma-enhanced chemical vapor deposition of metals and suicides, and plasma enhanced chemical vapor deposition of dielectrics. The part on Lithography presents the high-resolution trilayer resist system, pulsed x-ray sources for submicrometer x-ray lithography, and high-intensity deep-UV sources. The last part, Etching, provides methods in etching, like ion-beam etching using reactive gases, low-pressure reactive ion etching, and the uses of inert-gas ion milling. The theory and mechanisms of plasma etching are described and a number of new device structures made possible by anisotropic etching are enumerated as well. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 994 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book VLSI Metallization written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 491 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 15: VLSI Metallization discusses the various issues and problems related to VLSI metallization. It details the available solutions and presents emerging trends. This volume is comprised of 10 chapters. The two introductory chapters, Chapter 1 and 2 serve as general references for the electrical and metallurgical properties of thin conducting films. Subsequent chapters review the various aspects of VLSI metallization. The order of presentation has been chosen to follow the common processing sequence. In Chapter 3, some relevant metal deposition techniques are discussed. Chapter 4 presents the methods of VLSI lithography and etching. Conducting films are first deposited at the gate definition step; therefore, the issues related to gate metallization are discussed next in Chapter 5.In Chapter 6, contact metallization is elaborated, and Chapter 7 is devoted to multilevel metallization schemes. Long-time reliability is the subject of Chapter 8, which discusses the issues of contact and interconnect electromigration. GaAs metallization is tackled in Chapter 9. The volume concludes with a general discussion of the functions of interconnect systems in VLSI. Materials scientists, processing and design engineers, and device physicists will find the book very useful.
Download or read book Gallium Arsenide Integrated Circuit Technology written by Richard Morton and published by . This book was released on 2000 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book VLSI Handbook written by Norman Einspruch and published by Academic Press. This book was released on 2012-12-02 with total page 929 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Handbook is a reference guide on very large scale integration (VLSI) microelectronics and its aspects such as circuits, fabrication, and systems applications. This handbook readily answers specific questions and presents a systematic compilation of information regarding the VLSI technology. There are a total of 52 chapters in this book and are grouped according to the fields of design, materials and processes, and examples of specific system applications. Some of the chapters under fields of design are design automation for integrated circuits and computer tools for integrated circuit design. For the materials and processes, there are many chapters that discuss this aspect. Some of them are manufacturing process technology for metal-oxide semiconductor (MOS) VLSI; MOS VLSI circuit technology; and facilities for VLSI circuit fabrication. Other concepts and materials discussed in the book are the use of silicon material in different processes of VLSI, nitrides, silicides, metallization, and plasma. This handbook is very useful to students of engineering and physics. Also, researchers (in physics and chemistry of materials and processes), device designers, and system designers can also benefit from this book.
Download or read book Monolithic Integration of Gallium Arsenide Light emitting Diodes and Silicon Field effect Transistors written by Ruby Nandini Ghosh and published by . This book was released on 1986 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Technical Digest 1983 written by and published by . This book was released on 1983 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Arsenide Technology written by David K. Ferry and published by Sams Technical Publishing. This book was released on 1985 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Device Electronics for Integrated Circuits written by Richard S. Muller and published by John Wiley & Sons. This book was released on 2002-10-28 with total page 564 pages. Available in PDF, EPUB and Kindle. Book excerpt: Focusing specifically on silicon devices, the Third Edition of Device Electronics for Integrated Circuits takes students in integrated-circuits courses from fundamental physics to detailed device operation. Because the book focuses primarily on silicon devices, each topic can include more depth, and extensive worked examples and practice problems ensure that students understand the details.
Download or read book GaAs Microelectronics written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 11: GaAs Microelectronics presents the important aspects of GaAs (Gallium Arsenide) IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. The volume is comprised of eleven chapters. Chapter 1 traces the historical development of GaAs technology for high-speed and high-frequency applications. This chapter summarizes the important properties of GaAs that serve to make this material and its related compounds technologically important. Chapter 2 covers GaAs substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapters 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, and bipolar and field-effect heterostructure transistor ICs. The high-speed capability of GaAs ICs introduces new problems, on-wafer testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for GaAs ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in GaAs ICs. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.
Download or read book Modern GaAs Processing Methods written by Ralph Williams and published by Artech House Microwave Library. This book was released on 1990 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing updated material from the first edition, this book adds several chapters covering RF testing techniques, reliability, process and manufacturing disciplines and process development (experiment by design).
Download or read book Official Gazette of the United States Patent and Trademark Office written by and published by . This book was released on 1988 with total page 668 pages. Available in PDF, EPUB and Kindle. Book excerpt:
