Download or read book The Effects of Electron and Hole Trapping on the Radiation Hardness of Al2O3 MIS Metal Insulator Semiconductor Devices written by Eli Harari and published by . This book was released on 1973 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt: The radiation sensitivity of MIS capacitors with pyrohydrolytic Al2O3 insulators has been investigated for X-irradiation at 300 and 80K. Both X-rays and light of various photon energies were used to vary the populations of electron and hole traps inherent in the 'as prepared' films. The energies of the trapping levels have been determined and the spatial distribution of the electron traps within the oxide estimated. These traps together with an SiO(x) layer at the semiconductor-oxide interface are shown to control the device behavior under ionizing radiation. (Author).
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1987 with total page 1124 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1975-06 with total page 1180 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hardening Semiconductor Components Against Radiation and Temperature written by William R. Dawes and published by William Andrew. This book was released on 1989 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes hardening of semiconductor components against radiation and temperature. Basic mechanisms of radiation effects on electronic materials and devices are discussed first, followed by such practical topics as hardening technologies, circuit design for hardening, and, finally, hardness assurance. Discussions center mainly on silicon technology.
Download or read book Charge Trapping Effects in Thin Films of Al2O3 and SiO2 written by Eliyahou Harari and published by . This book was released on 1973 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electron and hole traps in MIS devices with pyrohydrolytic Al2O3 gate insulator have been investigated, using the MIS device as an integral detector of the charge stored in the oxide. The same detection technique has been used to investigate ionizing radiation-induced charge trapping effects in thin films of SiO2 incorporated into MIS capacitor structures. (Modified author abstract).
Download or read book New Insulators Devices and Radiation Effects written by and published by Elsevier. This book was released on 1999-02-11 with total page 967 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called "instabilities". These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation. The problem of instabilities is addressed in this volume, the third of this book series. Vol.3 updates and supplements the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics to the presence of physical defects and impurities or to the radiation environment which caused them.
Download or read book Government Reports Announcements written by and published by . This book was released on 1973 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices written by Ronald D Schrimpf and published by World Scientific. This book was released on 2004-07-29 with total page 349 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.
Download or read book 9th General Conference of the Condensed Matter Division Nice France 6 9 March 1989 written by European Physical Society. Condensed Matter Division. General Conference and published by . This book was released on 1989 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Government Reports Index written by and published by . This book was released on 1975 with total page 1076 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Government Reports Announcements Index written by and published by . This book was released on 1976 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Fabrication and Experimental Analysis of Metal Insulator Semiconductor Devices for Radiation Vulnerability Studies written by T. A. Williamson and published by . This book was released on 1971 with total page 247 pages. Available in PDF, EPUB and Kindle. Book excerpt: The report discusses the following: The insulated gate field effect transistor (IGFET); Nuclear radiation effects on the IGFET; The fabrication of metal-insulator-silicon (MIS) capacitors; Analysis of the MIS capacitor; Testing of experimental devices, and Analysis of the experimental data.
Download or read book Ionizing Radiation Effects in Electronics written by Marta Bagatin and published by CRC Press. This book was released on 2018-09-03 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ionizing Radiation Effects in Electronics: From Memories to Imagers delivers comprehensive coverage of the effects of ionizing radiation on state-of-the-art semiconductor devices. The book also offers valuable insight into modern radiation-hardening techniques. The text begins by providing important background information on radiation effects, their underlying mechanisms, and the use of Monte Carlo techniques to simulate radiation transport and the effects of radiation on electronics. The book then: Explains the effects of radiation on digital commercial devices, including microprocessors and volatile and nonvolatile memories—static random-access memories (SRAMs), dynamic random-access memories (DRAMs), and Flash memories Examines issues like soft errors, total dose, and displacement damage, together with hardening-by-design solutions for digital circuits, field-programmable gate arrays (FPGAs), and mixed-analog circuits Explores the effects of radiation on fiber optics and imager devices such as complementary metal-oxide-semiconductor (CMOS) sensors and charge-coupled devices (CCDs) Featuring real-world examples, case studies, extensive references, and contributions from leading experts in industry and academia, Ionizing Radiation Effects in Electronics: From Memories to Imagers is suitable both for newcomers who want to become familiar with radiation effects and for radiation experts who are looking for more advanced material or to make effective use of beam time.
Download or read book Performance and Reliability of Insulator for Nanometer Metal insulator semiconductor Field Effects Transistors written by Hyeon-Seag Kim and published by . This book was released on 1998 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Charge state Effects on Annealing of Electron irradiated Silicon written by H. M. DeAngelis and published by . This book was released on 1974 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt: Radiation-induced defects can alter the properties of silicon and thereby degrade the performance of devices used in electronic and optoelectronic subsystems that must operate in nuclear and space radiation environments. The factors that produce or affect the stability of these defects are important considerations in developing methods for hardening devices to nuclear radiation. The annealing behavior of the E center, a prominent defect in electron-irradiated float-zone phosphorous-doped silicon, can be monitored by capacitance measurement techniques used with silicon Schottky barrier diodes. The defect charge state can be controlled during annealing by applying a reverse bias. It has been shown that although the E center is more stable in the negative charge state, it anneals more readily in the neutral charge state. It has been found that the capacitance measurement technique provides details of the properties of discrete radiation-induced defects not possible to obtain through the more conventional measurements of the Hall effect, conductivity, and carrier lifetime. (Author).
Download or read book Ionizing Radiation Effects In Mos Oxides written by Timothy R Oldham and published by World Scientific. This book was released on 2000-01-25 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. The last such guide was Ionizing Radiation Effects in MOS Devices and Circuits, edited by Ma and Dressendorfer and published in 1989. While that book remains an authoritative reference in many areas, there has been a significant amount of more recent work on the nature of the electrically active defects in MOS oxides which are generated by exposure to ionizing radiation. These same defects are also critical in many other areas of oxide reliability research. As a result of this work, the understanding of the basic physical mechanisms has evolved. This book summarizes the new work and integrates it with older work to form a coherent, unified picture. It is aimed primarily at specialists working on radiation effects and oxide reliability.
Download or read book Science and Technology of Semiconductor On Insulator Structures and Devices Operating in a Harsh Environment written by Denis Flandre and published by Springer Science & Business Media. This book was released on 2005 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt:
