Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 911 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.

Download or read book Nanoindentation written by Anthony C. Fischer-Cripps and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 283 pages. Available in PDF, EPUB and Kindle. Book excerpt: This new edition of Nanoindentation includes a dedicated chapter on thin films, new material on dynamic analysis and creep, accounts of recent research, and three new appendices on nonlinear least squares fitting, frequently asked questions, and specifications for a nanoindentation instrument. Nanoindentation Second Edition is intended for those who are entering the field for the first time and to act as a reference for those already conversant with the technique.

Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1967-08 with total page 1272 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Properties and Applications of Silicon Carbide written by Rosario Gerhardt and published by BoD – Books on Demand. This book was released on 2011-04-04 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this book, we explore an eclectic mix of articles that highlight some new potential applications of SiC and different ways to achieve specific properties. Some articles describe well-established processing methods, while others highlight phase equilibria or machining methods. A resurgence of interest in the structural arena is evident, while new ways to utilize the interesting electromagnetic properties of SiC continue to increase.

Download or read book Radiation Effects in Silicon Carbide written by A.A. Lebedev and published by Materials Research Forum LLC. This book was released on 2017 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book reviews the most interesting research concerning the radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. The electrical parameters that make SiC a promising material for applications in modern electronics are discussed in detail. Specific features of the crystal structure of SiC are considered. It is shown that, when wide-bandgap semiconductors are studied, it is necessary to take into account the temperature dependence of the carrier removal rate, which is a standard parameter for determining the radiation hardness of semiconductors. The carrier removal rate values obtained by irradiation of various SiC polytypes with n- and p-type conductivity are analyzed in relation to the type and energy of the irradiating particles. The influence exerted by the energy of charged particles on how radiation defects are formed and conductivity is compensated in semiconductors under irradiation is analyzed. Furthermore, the possibility to produce controlled transformation of silicon carbide polytype is considered. The involvement of radiation defects in radiative and nonradiative recombination processes in SiC is analyzed. Data are also presented regarding the degradation of particular SiC electronic devices under the influence of radiation and a conclusion is made regarding the radiation resistance of SiC. Lastly, the radiation hardness of devices based on silicon and silicon carbide are compared.

Download or read book Alloys Index written by and published by . This book was released on 1982 with total page 1000 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book INIS Atomindeks written by and published by . This book was released on 1986 with total page 1204 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Download or read book Mechanical Properties of Ceramics written by John B. Wachtman and published by John Wiley & Sons. This book was released on 2009-08-13 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: A Comprehensive and Self-Contained Treatment of the Theory and Practical Applications of Ceramic Materials When failure occurs in ceramic materials, it is often catastrophic, instantaneous, and total. Now in its Second Edition, this important book arms readers with a thorough and accurate understanding of the causes of these failures and how to design ceramics for failure avoidance. It systematically covers: Stress and strain Types of mechanical behavior Strength of defect-free solids Linear elastic fracture mechanics Measurements of elasticity, strength, and fracture toughness Subcritical crack propagation Toughening mechanisms in ceramics Effects of microstructure on toughness and strength Cyclic fatigue of ceramics Thermal stress and thermal shock in ceramics Fractography Dislocation and plastic deformation in ceramics Creep and superplasticity of ceramics Creep rupture at high temperatures and safe life design Hardness and wear And more While maintaining the first edition's reputation for being an indispensable professional resource, this new edition has been updated with sketches, explanations, figures, tables, summaries, and problem sets to make it more student-friendly as a textbook in undergraduate and graduate courses on the mechanical properties of ceramics.

Download or read book Silicon Carbide Ceramics written by S. Somiya and published by Springer Science & Business Media. This book was released on 1991-08-31 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbides have major industrial uses as high temperature structural ceramic materials. These two volumes are translated from the Japanese and provide a comprehensive account of the seminal work going on in Japan.

Download or read book Plasma Surface Interactions in Controlled Fusion Devices written by and published by . This book was released on 1978 with total page 658 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Metals Abstracts written by and published by . This book was released on 1995 with total page 1602 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ceramic Abstracts written by and published by . This book was released on 1998 with total page 1040 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Technical Publications Announcements with Indexes written by United States. National Aeronautics and Space Administration and published by . This book was released on 1962 with total page 796 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Handbook of Tensile Properties of Textile and Technical Fibres written by A. R. Bunsell and published by Elsevier. This book was released on 2009-10-19 with total page 689 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fibres usually experience tensile loads whether they are used for apparel or technical structures. Their form, which is long and fine, makes them some of the strongest materials available as well as very flexible. This book provides a concise and authoritative overview of tensile behaviour of a wide range of both natural and synthetic fibres used both in textiles and high performance materials.After preliminary chapters that introduce the reader to tensile properties, failure and testing of fibres, the book is split into two parts. Part one examines tensile properties and failure of natural fibres, such as cotton, hemp, wool and silk. Part two discusses the tensile properties and failure of synthetic fibres ranging from polyamide, polyester and polyethylene fibres to carbon fibres. Many chapters also provide a general background to the fibre, including the manufacture, microstructure, factors that affect tensile properties as well as methods to improve tensile failure.With its distinguished editor and array of international contributors, Handbook of tensile properties of textile and technical fibres is an important reference for fibre scientists, textile technologists and engineers, as well as those in academia. - Provides an overview of tensile behaviour of a wide range of both natural and synthetic fibres - Examines tensile characterisitics, tensile failure of textiles fibres and factors that affect tensile properties - Discusses mircostructures and each type of fibre from manufacture to finished product

Download or read book Physics and Technology of Silicon Carbide Devices written by George Gibbs and published by . This book was released on 2016-10-01 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.