Download or read book The Diffusion of Ion implanted Boron in Silicon Dioxide written by Chiu-Yuen Jacob Ng and published by . This book was released on 1984 with total page 254 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Diffusion of Ion Implanted Boron in Silicon written by Lance Stanford Robertson and published by . This book was released on 2001 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation written by Geoffrey Dearnaley and published by North-Holland. This book was released on 1973 with total page 826 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation in Semiconductors written by Susumu Namba and published by Springer. This book was released on 1975-07 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt: The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook.
Download or read book Ion Implantation Effects in Silicon Dioxide written by Seyed Mohamad Reza Kazerounian and published by . This book was released on 1984 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Experimental Investigation and Modeling of the Effects of High dose Ion Implantation Damage on Boron Diffusion in Silicon written by Robert Y. S. Huang and published by . This book was released on 1994 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Bibliographie sur l huile de Carthame written by and published by . This book was released on 1955 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics and modeling of boron diffusion activation and evolution of extended defects and point defects during rapid thermal annealing of ion implanted silicon written by Hiroyuki Kinoshita and published by . This book was released on 1993 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation in Semiconductors 1976 written by Fred Chernow and published by Springer. This book was released on 1977-11 with total page 776 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Fifth International Conference on Ion Implantation took place in Boulder, Colorado between the 9th and 13th of August 1976. Papers were delivered by scientists and engineers from 15 countries, and the attendees represented 19 countries. As has become the custom at these conferences, the sessions were intense with the coffee breaks and evenings given to informal meetings among the participants. It was a time to renew old friendships, begin new ones, exchange ideas, personally question authors of papers that appeared in the literature since the last conference and find out what was generally happening in Ion Implantation. In recent years it has beome more difficult to get funding to travel to such meetings. To assist the participating authors financial aid was solicited from industry and the Office of Naval Research. We are most grateful for their positive response to our requests. The success of the conference was in part due to their generous contributions. The Program Committee had the unhappy task of the reviewing of more than 170 abstracts. The result of their labors was well worth their effort. Much thanks goes to them for molding the conference into an accurate representation of activities in the field. Behind the scenes in Boulder, local arrangements were handled ably by Graeme Eldridge. The difficulty of this task cannot be overemphasized. Our thanks to him for a job well done.
Download or read book Studies of Boron Implantation Through Photochemically Deposited SiO2 Films on Hg1 xCdxTe written by Robert C Bowman (Jr) and published by . This book was released on 1987 with total page 23 pages. Available in PDF, EPUB and Kindle. Book excerpt: Variable temperature Hall and resistivity measurements have been used to monitor the changes in carrier behavior in p-type Hg1-xCdxTe when boron ions are implanted through photochemically deposited SiO2. The formation of an n-type layer is demonstrated. Quantitative and non-destructive determination of the absolute 10B concentration and distribution have been obtained by the novel method of neutron depth profiling. As expected, the boron distributions in the SiO2 films and Hg1-xCdxTe are strongly dependent upon the ion implant energy. However, negligible changes in the boron depth profiles were found after 200 C anneals. The present results are briefly related to the performance behavior of mid-wavelength infrared (MWIR) sensors produced via generic ion implantation procedures. Keywords: Mercury cadmium tellurides, Ion implantation effects, Silicon dioxide, Passivation, Neutron depth profiling, Infrared materials, Analysis.
Download or read book Physics and Modeling of Ion Implantation Induced Transient Deactivation and Diffusion Processes in Boron Doped Silicon written by Srinivasan Chakravarthi and published by . This book was released on 2001 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Diffusion of Boron in Silicon Dioxide written by W. J. Armstrong and published by . This book was released on 1962 with total page 32 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Annealing and Diffusion Characteristics of Boron Through oxide Implanted Silicon written by Der-Tsyr Fan and published by . This book was released on 1991 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation in Semiconductors written by Susumu Namba and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook.
Download or read book The Physics of VLSI Xerox Palo Alto 1984 written by J. C. Knights and published by . This book was released on 1984 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation in Microelectronics written by A. H. Agajanian and published by Springer. This book was released on 1981-09-30 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the past ten years the use of ion implantation for doping semiconductors has become an active area of research and new device development. This doping technique has recently reached a level of maturity such that it is an integral step in the manu facturing of discrete semiconductor devices and integrated circuits. Ion implantation has significant advantages over diffusion such as: precision, purity, versatility, and automation; all of which are important for VLSI purposes. Ion implantation has also found new applications in magnetic bubble domain materials, superconductors, and materials synthesis. This book is a comprehensive bibliography of 2467 references of the world's literature on ion implantation as applied to micro electronics. This compilation will easily enable researchers to compare their work with that of others. For easy access to the needed references, the contents are divided into fifty-two subject headings. The main categories are: bibliographies, books and symposia, review articles, theory, materials, device applications, and equipment. An author index and a subject index are also given to provide easy access to the references. The literature from January 1976 to December 1980 is covered. The literature prior to 1976 is the subject, in part, of a previous book by the author (1). The main sources searched were: Physics Abstracts (PA) , Electrical and Electronics Abstracts (EEA) , Chemical Abstracts (CA) , Nuclear Science Abstracts (NSA) , and Engineering Index. The volumes and numbers of the abstracts are given to pro vide access to the abstracts.
Download or read book The Diffusion and Redistribution of Boron at the Silicon Dioxide silicon Interface written by K. V. Anand and published by . This book was released on 1967 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
